Improvement of Bondability by Depressing the Inhomogeneous Distribution of Nanoparticles in a Sintering Bonding Process with Silver Nanoparticles

Low-temperature bonding by sintering of Ag nanoparticles (NPs) is a promising lead-free bonding technique used in the electronic packaging industry. In this work, we prepare Ag nanoparticle (NP) paste using both an aqueous method and a polyol method. Sintering bonding trials were then conducted using different forms of Ag NPs. The results showed that use of the aqueous-based Ag NP paste led to inhomogeneous distribution of NPs, known as the ??coffee-ring effect.?? This led to low strength of fabricated joints. We investigated the influence of the coffee-ring effect and ways to depress it by changing the bonding material composition. Our results show that, when using polyol-based Ag NP paste as the bonding material, the coffee-ring effect was successfully depressed due to increased Marangoni flow. The corresponding shear strength of joints was increased significantly to 50?MPa at bonding temperature of 250°C.     

Cu wire bond microstructure analysis and failure mechanism

In this study, copper wire bonding samples were aged at 205 °C in air from 0 h to 2000 h. It was found that the bonding of a Cu wire and an Al pad formed Cu₉Al₄, CuAl, and CuAl₂ intermetallic compounds, and an initial crack was formed by the ultrasonic squeeze effect during thermosonic wire bonding. The cracks grew towards the ball bond center with an increase in the aging time, and the Cl ions diffused through the crack into the ball center. This diffusion caused a corrosion reaction between the Cl ions and the Cu-Al intermetallic phases, which in turn caused copper wire bonding damage.     

Direct gold and copper wires bonding on copper

The key to bonding to copper die is to ensure bond pad cleanliness and minimum oxidation during wire bonding process. This has been achieved by applying a organic coating layer to protect the copper bond pad from oxidation. During the wire bonding process, the organic coating layer is removed and a metal to metal weld is formed. This organic layer is a self-assembled monolayer. Both gold and copper wires have been wire-bonded successfully to the copper die even without prior plasma cleaning. The ball diameter for both wires are 60 μm on a 100 μm fine pitch bond pad. The effectiveness of the protection of the organic coating layer starts from the wafer dicing process up to the wire bonding process and is able to protect the bond pad for an extended period after the first round of wire bond process. In this study, oxidization of copper bond pad at different packaging processing stages, dicing and die attach curing, have been explored. The ball shear strength for both gold and copper ball bonds achieved are 5 and 6 g/mil² respectively. When subjected to high temperature storage test at 150 °C, the ball bonds formed by both gold and copper wire bond on the organic coated copper bondpad are thermally stable in ball shear strength up to a period of 1440 h. The encapsulated daisy chain test vehicle with both gold and copper wires bonding have passed 1000 cycles of thermal cycling test (−65 to 150 °C). It has been demonstrated that orientation imaging microscopy technique is able to detect early levels of oxidation on the copper bond pad. This is extremely important in characterization of the bondability of the copper bond pad surface.     

Oxidation of copper pads and its influence on the quality of Au/Cu bonds during thermosonic wire bonding process

To understand the copper oxide effect on the bondability of gold wire onto a copper pad, thermosonic gold wire bonding to a copper pad was conducted at 90–200 °C under an air atmosphere. The bondability and bonding strength of the Au/Cu bonds were investigated. The bondability and bonding strength were far below the minimum requirements stated in industrial codes. At elevated bonding temperature of 200 °C, the bondability and bonding strength deteriorated mainly due to hydroxide and copper oxide formation on the copper pad. Oxide formation occurred if no appropriate oxide preventive schemes were applied. At lower bonding temperature, 90 °C, poor bondability and low bonding strength were mainly attributed to insufficient thermal energy for atomic inter-diffusion between the gold ball and copper pad.Copper pad oxidation was investigated using an electron spectroscopy for chemical analysis (ESCA) and thermogravimetric analysis (TGA). An activation energy of 35 kJ/mol for copper pad oxidation was obtained from TGA. This implies that different mechanisms govern the oxidation of copper pad and bulk copper. Hydroxide and copper oxide were identified based on the shifted binding energy. Cu(OH)₂ forms mainly on the top surface of copper pads and the underlying layer consists mainly of CuO. The hydroxide concentration increased with increasing the heating temperatures. After heating at 200 °C, the hydroxide concentration on the copper pad surface was approximately six times that at 90 °C. Protective measures such as passivation layer deposition or using shielding gas are critical for thermosonic wire bonding on chips with copper interconnects.     

Effect of the direct current on microstructure,tensile property and bonding strength of pure silver wires

In the microelectronics assembly and packaging industry, the wire bonding has become an important process to connect lead frames and pads. In the past, gold and copper were the main materials of wire bonding. However, the cost of gold wires is getting higher nowadays and yet wire bonding cannot be wholly replaced by copper wire; thus silver wires become a novel bonding material in recent years. The reliability test of wires was a static method; this study leads electrical current into the wires to estimate the structural changing and interface properties of Al pads (positive and negative pad). After leading 90% critical fusing current density (CFCD) into a 23 μm silver wire, some grains of silver wire had grown up and formed into equal-diameter grains (EDG). After the current test, the fracture position of bonded wires moved from heat affect zone (HAZ) of electric flame-off (EFO) to the neck of HAZ. Otherwise, the current test would reduce the tensile strength of wire. The bonding strength of the positive pad was lower than that of the negative pad. The intermetallic compound (IMC) of bonding interface was AgAl₂.     

Effect of preparation techniques on infrared emissivities of Zn0.9Co0.1O powders

Zn_0.9Co_0.1O powders were prepared by chemical solution deposition, solid-state reaction and sol–gel route at different calcination temperatures. The structure and morphologies of samples were determined by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The infrared absorption spectra and infrared emissivities in the range of 8–14 μm were investigated by Fourier transform infrared spectroscopy and IR-2 dual-band infrared emissometer. XRD patterns confirmed the hexagonal wurtzite structure of as-synthesized samples but the peaks of the secondary phase, ZnCo₂O₄, were observed below 1000 °C. Scanning electron micrographs showed large grain sizes of the samples prepared by solid-state reaction and sol–gel processing. The infrared emissivities of samples fabricated by chemical solution deposition and sol–gel route decreased with increasing temperature. Powders obtained using solid-state reaction showed the lowest emissivities, with a minimum value (0.755) at 1150 °C.     

Thermosonic bonding of gold wire onto silver bonding layer on the bond pads of chips with copper interconnects

A copper pad oxidizes easily at elevated temperatures during thermosonic wire bonding for chips with copper interconnects. The bondability and bonding strength of a gold wire onto a bare copper pad are seriously degraded by the formation of a copper oxide film. A new bonding approach is proposed to overcome this intrinsic drawback of the copper pad. A silver layer is deposited as a bonding layer on the surface of copper pads. Both the ball-shear force and the wire-pull force of a gold wire bonded onto copper pads with silver bonding layers far exceed the minimum values stated in the JEDEC standard and MIL specifications. The silver bonding layer improves bonding between the gold ball and copper pads. The reliability of gold ball bonds on a bond pad is verified in a high-temperature storage (HTS) test. The bonding strength increases with the storage time and far exceeds that required by the relevant industrial codes. The superior bondability and high strength after the HTS test were interpreted with reference to the results of electron probe x-ray microanalyzer (EPMA) analysis. This use of a silver bonding layer may make the fabrication of copper chips simpler than by other protective schemes.     

Effect of wire diameter on the thermosonic bond reliability

Thermosonic bonding process is a viable method to make reliable interconnections between die bond pads and leads using thin gold and copper wires. This paper investigates interface morphology and metallurgical behavior of the bond formed between wire and bond pad metallization for different design and process conditions such as varying wire size and thermal aging periods. Under thermal aging, the fine pitch gold wire ball bonds (0.6 mil and 0.8 mil diameter wires) shows formation of voids apart from intermetallic compound growth. While, with 1-mil and 2-mil diameter gold wire bonds the void growth is less significant and reveal fine voids. Studies also showed void formation is absent in the case of thicker 3 mil wire bonds. Similar tests on copper ball bonds shows good diffusional bonding without any intermetallic phase formation (or with considerable slow growth) as well as any voids on the microscopic scale and thus exhibits to be a better design alternative for elevated temperature conditions.     

A Hermetic Seal Using Composite Thin-Film In/Sn Solder as an Intermediate Layer and Its Interdiffusion Reaction with Cu

A bonding joint between Cu metallization and evaporated In/Sn composite solder is produced at a temperature lower than 200°C in air. The effects of bonding temperature and duration on the interfacial bonding strength are studied herein. Cross sections of bonding joints processed at different bonding conditions were examined by scanning electron microscopy (SEM). The optimal condition, i.e., bonding temperature of 180°C for 20 min, was chosen because it gave rise to the highest average bonding strength of 6.5 MPa, and a uniform bonding interface with minimum voids or cracks. Good bond formation was also evidenced by scanning acoustic imaging. For bonding couples of patterned dies, a helium leak rate of 5.8 × 10⁻⁹ atm cc/s was measured, indicating a hermetic seal. The interfacial reaction between Cu and In/Sn was also studied. Intermetallic compounds (IMCs) such as AuIn₂, Cu₆Sn₅, and Cu₁₁In₉ were detected by means of x-ray diffraction analysis (XRD), and transmission electron microscopy (TEM) accompanied by energy-dispersive x-ray (EDX) spectroscopy. Chemical composition analysis also revealed that solder interlayers, Sn, and In were completely converted into IMCs by reaction with Cu. All the IMCs formed in the joints have remelting temperatures above 300°C according to the Cu-In, Cu-Sn, and Au-In phase diagrams. Therefore, the joint is able to sustain high service temperatures due to the presence of these IMCs.     

Electrically Conductive Thick Film Made from Silver Alkylcarbamates

A homogeneous electrically conductive silver paste without solid or particle phase was developed using silver alkylcarbamates [(C _n H_2n−1NHCOO)₂Ag, n ≤ 4] as the precursor of the functional phase. The silver alkylcarbamates were light insensitive and had a low decomposition temperature (below 200°C). The paste was a non-Newtonian fluid with viscosity significantly depending on the content of the thickening agent ethyl cellulose. Array patterns with a resolution of 20 μm were obtained using this paste by a micropen direct-writing method. After the paste with about 48 wt.% silver methylcarbamate [(CH₃NHCOO)₂Ag] precursor was sintered at 180°C for 15 min, an electrically conductive network consisting of more than 95 wt.% silver was formed, and was found to have a volume electrical resistivity on the order of 10⁻⁵ Ω cm and a sheet electrical resistivity on the order of 10⁻²–10⁻³ Ω/□. The cohesion strength within the sintered paste and the adhesion strength between the sintered paste layer and the alumina ceramic substrate were tested according to test method B of the American Society for Testing and Materials standard D3359-08. None of the sintered paste layer was detached under the test conditions, and the cohesion and adhesion strengths met the highest grade according to the standard.     

Solderless bonding with nanoporous copper as interlayer for high-temperature applications

The Cu₄₀Al₆₀ alloy has been developed as the precursor alloy to fabricate nanoporous copper (NPC) sheets through chemical dealloying in 1.6 mol/L dilute hydrochloric acid solution at various temperatures. A nanoporous structure with uniform pore distribution and size formed after the bath temperature exceeded 80 °C. The CuCu interconnection was achieved by inserting the NPC sheet as an interlayer and reflowing without solder under a pressure of 10 MPa. After bonding, the thickness of NPC layer was greatly reduced and the porous structure was densified. The average shear strength of the bondlines was measured to be 22.10 MPa, and the bondlines exhibit a low electrical resistivity of 9.65 μΩ·cm. The Vickers hardness and shear strength of the bondline increased after aging at 150 °C for different time due to the densified porous structure. This work demonstrated that the NPC sheets can be used to achieve the CuCu interconnection, which is a potential bonding technology for power devices operating at high temperature.     

Accelerated active ageing test on SiC JFETs power module with silver joining technology for high temperature application

This paper presents the accelerated active power cycling test (APCT) results on SiC JFETs power module dedicated to operate at high temperature. This study partly focuses on the new chip joining technology (LTJT), which permit to use SiC JFETs transistors at higher temperatures. We present the different die attachments tested with high temperature lead solder and silver sintering joining technologies. Active power cycling results for high junction temperature T_jmax = 175 °C with ΔT_j = 80 K to perform an evaluation of main damages during active test are carried out and a comparison between lead and silver chip joining technologies is presented.     

High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment

In this paper, we present the realization of high-temperature operation of SiC power semiconductor devices by low-temperature sintering of nanoscale silver paste as a novel die-attachment solution. The silver paste was prepared by mixing nanoscale silver particles with carefully selected organic components which can burn out within the low-temperature firing range. SiC Schottky diodes were placed onto stencil-printed layers of the nanoscale silver paste on Au or Ag metallized direct bonded copper (DBC) substrates for the die-attachment. After heating up to 300degC and dwell for 40 min in air to burn out the organic components in the paste and to sinter the nanoscale silver, the paste consolidated into a strong and uniform die-attach bonding layer with purity >99% and density >80%. Then the die-attached SiC devices were cooled down to room temperature and their top terminals were wire-bonded to achieve the high-temperature power packages. Then the power packages were heated up from room temperature to 300degC for high-temperature operation and characterization. Results of the measurement demonstrate the low-temperature silver sintering as an effective die-attach method for high-temperature electronic packaging. An advanced packaging structure for future SiC transistors with several potential advantages was also proposed based on the low-temperature sintering technology.     

Influence of the sol gel synthesis parameters on the photoluminescence properties of ZnO nanoparticles

In this work, ZnO NPs were successfully synthesized by the sol–gel method without any organic additives or post annealing. The effect of the preparation process on the structural and optical properties of the resulting NPs was investigated by means of X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. The structural characterization demonstrated clearly that the NPs crystallize in pure ZnO würtzite structure without any other secondary phases. Furthermore, we show that it is possible to perform the control of the crystalline growth orientation of ZnO NPs, which is a key parameter when seeking to develop ZnO NPs with piezoelectric properties for nano-transducer applications. In fact, TEM observations show that the reduction of the NaOH flow changes the NPs shape from hexagonal NPS to short nanorods grown along the c-axis. The PL spectra of the obtained NPs excited at 280 nm, present an UV emission centered at approximately 380 nm with a slight shift when varying the synthesis temperature and/or the NaOH flow. Moreover, as the visible region (from 400 to 650 nm) is concerned, it was shown that the increasing of the synthesis temperature affects strongly the kind of interstitial defects (O_i, Zn_i and V_oZn_i) formed in ZnO nanostructures. However, the excitation at 320 nm revealed a broad deep-level emission for all the samples that can be deconvoluted into two Gaussian peaks centered at 514 nm (P₁) and 581 nm (P₂). These last results have been discussed in the light of a physical mechanism based on the Schottky barrier.     

Numerical Modeling of the Performance of Thermal Interface Materials in the Form of Paste-Coated Sheets

The performance of thermal interface materials in the form of core sheets coated on both sides with a thermal paste is numerically modeled by finite-element analysis. The paste is polyol-ester-based carbon black paste and serves to improve the conformability. Good agreement is found between modeling and experimental results that involve copper proximate surfaces sandwiching the thermal interface material. The core sheets are copper, aluminum, indium, and flexible graphite. Flexible graphite (made from exfoliated graphite) is advantageous in its low elastic modulus, whereas copper and aluminum foils are advantageous in their high thermal conductivity. Indium is advantageous in its low elastic modulus compared with copper or aluminum and in its high thermal conductivity compared with flexible graphite. Among the four types of core sheet with identical thickness, coated indium foil gives the best performance for the range of foil thickness of 6 μm to 112 μm for the case of smooth (0.01 μm roughness) proximate surfaces and 117 μm to 320 μm for the case of rough (15 μm roughness) proximate surfaces. Aluminum foil gives the best performance for the thickness range of 112 μm to 2000 μm in the case of smooth proximate surfaces. For thicknesses below these ranges, flexible graphite performs the best. For thicknesses above these ranges, copper foil performs the best.     

Polymer-Protected Cu-Ag Mixed NPs for Low-Temperature Bonding Application

A simple method has been proposed to prepare polymer-protected Cu-Ag mixed nanoparticles (NPs), which are suitable for use as low-temperature bonding materials. The polymer coated on the Cu-Ag mixed NPs can protect them from oxidation effectively when heated in air at temperature lower than 280°C. The low-temperature bonding process utilizing Cu-Ag mixed NPs as the bonding material is investigated. The bonding experiments show that robust joints are formed using Cu-Ag mixed NPs at 160°C in air. The shear test shows that addition of copper to silver is helpful for improving joint strength. This novel sintering-bonding technology using Cu-Ag mixed NPs as an interconnection material has potential for application in the electronics packaging industry.     

Tensile Behaviors and Ratcheting Effects of Partially Sintered Chip-Attachment Films of a Nanoscale Silver Paste

The mechanical behaviors of partially sintered thick films of a nanoscale silver paste used for attaching semiconductor chips are studied. The films, about 150 μm thick, were made by repeatedly stencil-printing the paste on a ceramic substrate and sintering by a recommended heating profile suitable for device attachment. The partially sintered films were lifted off the substrate, and their tensile behaviors, i.e., stress–strain curves, were measured at temperatures between −60°C and 300°C using a dynamic mechanical analyzer (DMA). The elastic modulus and tensile strength of the sintered silver films decreased with increasing temperature. Ratcheting behaviors of the films under cyclic tension at 150°C were also tested by using the DMA by examining the effects of loading rate, mean stress, and stress amplitude. The ratcheting strain grew with increasing mean stress or stress amplitude and with decreasing loading rate.     

Evaluation of the corrosion performance of Cu–Al intermetallic compounds and the effect of Pd addition

Copper wire has become a mainstream bonding material in fine-pitch applications due to the rising cost of gold wire. In recent years, palladium-coated copper (Pd–Cu) wire is being increasingly used to overcome some constraints posed by pure Cu wire. During wire bonding with aluminum bond pads, different intermetallic compound (IMC) phases that have been identified at the bond interface are typically CuAl₂, CuAl and Cu₉Al₄. However, the corrosion susceptibility of these IMCs has not been investigated. This paper compares the electrical impedance and corrosion performance of the three types of Cu–Al IMCs in an acidic chloride medium by employing electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization. The analysis of the potentiodynamic polarization results was performed using Tafel extrapolation. A comparison was made with pure Cu and Al. The effect of Pd alloy on the IMC corrosion performance has also been studied. Among the three Cu–Al IMCs, Cu₉Al₄ was observed to have the largest corrosion rate followed by CuAl₂ and CuAl. For the metals, Cu was observed to have the lowest corrosion rate and Al is the most easily corroded. The addition of Pd of up to 10 wt.% replacement of the Cu in the alloys slightly improves the corrosion resistance of the metals and IMCs.     

Modular sensor chip design for package stress evaluation and reliability characterisation

A modular test chip comprising an array of 2 mm square modules has been designed and fabricated. The maximum chip size can be up to 10 mm square, i.e. a 5 × 5 array of modules. The motivation behind the test chip is primarily the need to address reliability concerns in the use of copper wire bonding. It is known that the move to replace gold wire bonding with copper, driven primarily by the escalating price of gold, leads to reliability challenges at the interfaces between the wire bonds, the bond pads and the mould compound. Its function is to address. The chip comprises daisy chain structures to monitor changes of wire bond resistance and leakage current, large and small area stress sensors to measure stress on the chip associated with die attach and moulding, and comb and triple track sensors to study corrosion and moisture penetration related to mould compound.     

Room temperature wedge-wedge ultrasonic bonding using aluminum coated copper wire

The purpose of this work is to evaluate the feasibility of room temperature wedge-wedge bonding using commercially available copper wires, coated with aluminum. Bonding quality, reliability and aging resistance of the wire bonds have been investigated using standard wire pull tests immediately after bonding and after accelerated life tests, including temperature storage at 125 °C, 150 °C, and 200 °C for up to 2000 h. Using focused ion beam (FIB-) preparation and high resolution electron microscopy (SEM, TEM combined with EDX X-ray analysis), results of microstructure investigations of the Al-coating/Cu wire interface as well as of the bonding interconnect formed between the coated wire and the metallization on ceramic substrate will be presented. These investigations provide background information regarding the binding mechanisms and material interactions, and contribute to assess and to avoid potential reliability risks. Due to the found advantageous bond processing behavior and increased reliability properties, our results indicate that room temperature wedge-wedge bonding of coated copper wires has a remarkable application potential, for instance in medical and other high reliability as well as high power applications. It combines all known advantages of usual copper bonding like excellent contacting behavior, high reliability and favorable material price with the possibility of processing temperature damageable components and considerable improved storage capability. Therefore, room temperature bonding using coated copper wire can also reduce cycle time, manufacturing and material costs.