Analysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current-voltage and admittance-voltage characteristics

In order to good interpret the experimentally observed Au/n-Si (metal-semiconductor) Schottky diodes with thin insulator layer (18 Å) parameters such as the zero-bias barrier height (Φ_bo), ideality factor (n), series resistance (R_s) and surface states have been investigated using current-voltage (I-V), capacitance-frequency (C-f) and conductance-frequency (G-f) techniques. The forward and reverse bias I-V characteristics of Au/n-Si (MS) Schottky diode were measured at room temperature. In addition, C-f and G-f characteristics were measured in the frequency range of 1 kHz-1 MHz. The higher values of C and G at low frequencies were attributed to the insulator layer and surface states. Under intermediate forward bias, the semi-logarithmic Ln (I)-V plot shows a good linear region. From this region, the slope and the intercept of this plot on the current axis allow to determine the ideality factor (n), the zero-barrier height (Φ_bo) and the saturation current (I_S) evaluated to 2.878, 0.652 and 3.61 × 10⁻⁷ A, respectively. The diode shows non-ideal I-V behavior with ideality factor greater than unity. This behavior can be attributed to the interfacial insulator layer, the surface states, series resistance and the formation barrier inhomogeneity at metal-semiconductor interface. From the C-f and G-f characteristics, the energy distribution of surface states (N_ss) and their relaxation time (τ) have been determined in the energy range of (E_c − 0.493E_v)-(E_c − 0.610) eV taking into account the forward bias I-V data. The values of N_ss and τ change from 9.35 × 10¹³ eV⁻¹ cm⁻² to 2.73 × 10¹³ eV⁻¹ cm⁻² and 1.75 × 10⁻⁵ s to 4.50 × 10⁻⁴ s, respectively.     

Study of GeYSi1 − Y:H films deposited by low frequency plasma

In this work, we report a study of the optical properties measured through spectral transmission and spectroscopic ellipsometry in Ge:H and Ge_YSi_1 − Y:H (Y ≈ 0.97) films deposited by low frequency (LF) PE CVD with hydrogen (H) dilution. The dilution was varied in the range of R = 20 to 80. It was observed that H-dilution influences in a different way on the interface and bulk optical properties, which also depend on incorporation of silicon. The films with low band tail characterized by its Urbach energy, E_U, and defect absorption, α_D, have been obtained in Ge:H films for R = 50 with E_U = 0.040 eV and α_D = 2 × 10³ cm^− 1 (hν ≈ 1.04 eV), and in Ge_YSi_1 − Y:H films for R=75 with E_U = 0.030 eV and α_D = 5 × 10² cm^− 1 (hν ≈ 1.04 eV).     

Microstructure and microwave dielectric characteristics of (1 − x)Ba(Zn1/3Ta2/3)O3-xBaTi4O9 ceramics

(1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ (0.1 ≤ x ≤ 0.85) composites are prepared by mixing 1150 °C-calcined BaTi₄O₉ with 1150 °C-calcined Ba(Zn_1/3Ta_2/3)O₃ powders. The crystal structure, microwave dielectric properties and sinterabilites of the (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics have been investigated. X-ray diffraction patterns reveal that BaTi₄O₉, ordered and disordered Ba(Zn_1/3Ta_2/3)O₃ phases exist independently over the whole compositional range. The sintering temperatures of (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics are about 1240 - 1320 °C and obviously lower than those of Ba(Zn_1/3Ta_2/3)O₃ ceramics. The dielectric constants (?_r) and the temperature coefficient of resonant frequency (τ_f) of (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics increase with the increase of BaTi₄O₉ content. Nevertheless, the bulk densities and the quality values (Q × f) of (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics increase with the increase of Ba(Zn_1/3Ta_2/3)O₃ content. The results are attributed to the higher density and quality value of Ba(Zn_1/3Ta_2/3)O₃ ceramics, the better grain growth, and the densification of sintered specimens added a small BaTi₄O₉ content. The (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramic with x = 0.1 sintered at 1320 °C exhibits a ?_r value of 31.5, a maximum Q × f value of 68500 GHz and a minimum τ_f value of 4.1 ppm/°C.     

Thermal stability of the Mobil Five type metallosilicate molecular sieves—An in situ high temperature X-ray diffraction study

We have carried out in situ high temperature X-ray diffraction (HTXRD) studies of silicalite-1 (S-1) and metallosilicate molecular sieves containing iron, titanium and zirconium having Mobil Five (MFI) structure (iron silicalite-1 (FeS-1), titanium silicalite-1 (TS-1) and zirconium silicalite-1 (ZrS-1), respectively) in order to study the thermal stability of these materials. Isomorphous substitution of Si⁴⁺ by metal atoms is confirmed by the expansion of unit cell volume by X-ray diffraction (XRD) and the presence of Si-O-M stretching band at ∼960 cm⁻¹ by Fourier transform infrared (FTIR) spectroscopy. Appearance of cristobalite phase is seen at 1023 and 1173 K in S-1 and FeS-1 samples. While the samples S-1 and FeS-1 decompose completely to cristobalite at 1173 and 1323 K, respectively, the other two samples are thermally stable upto 1623 K. This transformation is irreversible. Although all materials show a negative lattice thermal expansion, their lattice thermal expansion coefficients vary. The thermal expansion behavior in all samples is anisotropic with relative strength of contraction along ‘a’ axes is more than along ‘b’ and ‘c’ axes in S-1, TS-1, ZrS-1 and vice versa in FeS-1. Lattice thermal expansion coefficients (α_v) in the temperature range 298-1023 K were −6.75 × 10⁻⁶ K⁻¹ for S-1, −12.91 × 10⁻⁶ K⁻¹ for FeS-1, −16.02 × 10⁻⁶ K⁻¹ for TS-1 and −17.92 × 10⁻⁶ K⁻¹ for ZrS-1. The highest lattice thermal expansion coefficients (α_v) obtained were −11.53 × 10⁻⁶ K⁻¹ for FeS-1 in temperature range 298-1173 K, −20.86 × 10⁻⁶ K⁻¹ for TS-1 and −25.54 × 10⁻⁶ K⁻¹ for ZrS-1, respectively, in the temperature range 298-1623 K. Tetravalent cation substitution for Si⁴⁺ in the lattice leads to a high thermal stability as compared to substitution by trivalent cations.     

Synthesis, low-temperature sintering and the dielectric properties of the ZnO-(1 − x)TiO2-xSnO2 (x = 0.04-0.2)

ZnO-(1 − x)TiO₂-xSnO₂ (x = 0.04-0.2) ceramics were prepared by conventional mixed-oxide method combined with a chemical processing. Fine particle powders were prepared by chemical processing to activate the formation of compound and to improve the sinterability. One wt.% of V₂O₅ and B₂O₃ with the mole ratios of 3:1 were used to lower the sintering temperature of ceramics. The effect of Sn content on phase structure and dielectric properties were investigated. The results show that the substituting Sn for Ti accelerates the hexagonal phase transition to cubic phase, and an inverse spinel structure Zn₂(Ti_1−xSn_x)O₄ solid solution forms. The best dielectric properties obtained at x = 0.12. The ZnO-0.88TiO₂-0.12SnO₂ ceramics sintered at 900 °C exhibit a good dielectric property: ?_r = 29 and tan δ = 9.86 × 10⁻⁵. Due to their good dielectric properties, low firing characteristics, ZnO-(1 − x)TiO₂-xSnO₂ (x = 0.04-0.2) can serve as the promising microwave dielectric capacitor.     

Synthesis and characterization of chalcogenide glasses from the system Ga-Ge-Sb-S and preparation of a single-mode fiber at 1.55 μm

The aim of this work is to study different compositions in the Ga-Ge-Sb-S system for the definition of two compositions compatible with the elaboration of a single-mode fiber at the 1.55 μm telecom wavelength. The variations of the glass transition temperature (T_g), the dilatation coefficient (α) and the refractive index (n) have been studied for two glasses series: Ga_xGe_25−xSb₁₀S₆₅ (series 1), Ga₅Ge_25−xSb₁₀S_60+x (series 2). This study has lead to the choice of the Ga₄Ge₂₁Sb₁₀S₆₅ composition as clad glass for the preparation of the single-mode fiber and Ga₅Ge₂₀Sb₁₀S₆₅ composition as the core. The discrepancies for the studied parameters between the core and clad compositions are the following: Δα < 2%, ΔT_g < 3% and Δn = 5 × 10⁻³. Finally a single-mode fiber has been prepared by the rod in tube technique.     

Constitutive equations for elevated temperature flow stress of Ti–6Al–4V alloy considering the effect of strain

In order to study the workability of Ti–6Al–4V alloy, the experimental stress–strain data from isothermal hot compression tests, in a wide range of temperatures (800–1050 °C) and strain rates (0.0005–1 s⁻¹), were used to develop the constitutive equation of different phase regimes (α + β and β phase). The effects of temperature and strain rate on deformation behaviors a represented by Zener–Holloman parameter in an exponent-type equation. The influence of strain was incorporated in constitutive analysis by considering the effect of strain on material constants. Correlation coefficient (R) and average absolute relative error (AARE) were introduced to verify the validity of the constitutive equation. The values of R and AARE were 0.997% and 9.057% respectively, which indicated that the developed constitutive equation (considering the compensation of strain) could predict flow stress of Ti–6Al–4V alloy with good correlation and generalization.     

Materials with layered structures XIII: electrical and optical properties of layered chalcogenides in the system CoIn2S4-CoIn2Se4

The system CoIn₂S_4xSe_4(1−x) has been investigated by X-ray powder methods on samples quenched at 700 °C. The spinel type phase has a phase width of 1≥x>0.9. A new layered compound is formed for 0.9>x>0.45 which crystallizes with the α-FeGa₂S₄-type with a=392.6 pm and c=1270.3 pm (x=0.5) for the hexagonal cell. Platelike crystals of the layered phase are obtained by transport reactions with iodine in a temperature gradient 750→700 °C. The band gaps of these crystals measured by optical absorption vary from 1.2 to 1.4 eV. The electrical conductivities of the crystals are found in the order of 10⁻⁵ Ω⁻¹ cm⁻¹.     

A study on stress affecting the microwave surface resistance of YBCO high temperature superconducting thin films

We calculate stress in YBa₂Cu₃O_7−x/MgO (YBCO/MgO) and YBa₂Cu₃O_7−x/LaAlO₃ (YBCO/LAO) by XRD of the sample, σ₁ = −1.2 GPa and σ₂ = −1.4 GPa, respectively, which shows that the stress in YBCO/LAO is stronger than that in YBCO/MgO. In addition, microwave response of the two pieces of thin films is also investigated by microstrip resonator technique. Surface resistance and penetration depth of the films are obtained by analyzing S₂₁ resonant curves of the microstrip resonator, the penetration depth λ₀ = 280 nm for YBCO/MgO and λ₀ = 265 nm for YBCO/LAO, and surface resistance R_s = 0.376 mΩ for YBCO/MgO and R_s = 2.660 mΩ for YBCO/LAO at 78 K, 10 GHz. The results show stronger stress in YBCO/LAO which lead to a larger microwave surface resistance than YBCO/MgO's. Some rational explanations are also analyzed and discussed in the paper.     

Structural, dielectric, magnetic, magnetodielectric and impedance spectroscopic studies of multiferroic BiFeO3-BaTiO3 ceramics

Polycrystalline (1−x)BiFeO₃-xBaTiO₃ (x = 0.00, 0.10, 0.20 and 0.30) ceramics have been prepared via mixed oxide route. The effect of BaTiO₃ substitution on the dielectric, ferroelectric and magnetic properties of the BiFeO₃ multiferroic perovskite was studied. From XRD analysis it revealed that BaTiO₃ substitution does not affect the crystal structure of the (1−x)BiFeO₃-xBaTiO₃ system up to x = 0.30. Improved dielectric properties were observed in the prepared system. An anomaly in the dielectric constant (?) was observed in the vicinity of the antiferromagnetic transition temperature. Experimental results suggest that in the (1−x)BiFeO₃-xBaTiO₃ system, the increase of BaTiO₃ concentration leads to the effective suppression of the spiral spin structure of BiFeO₃, resulting in the appearance of net magnetization. The dependence of dielectric constant and loss tangent on the magnetic field is a evidence of magnetoelectric coupling in (1−x)BiFeO₃-xBaTiO₃ system. The impedance analysis suggests the presence of a temperature dependent electrical relaxation process in the material, which is almost similar for all the concentrations in the present studies. The electrical conductivity has been observed to increase with rise in temperature showing a typical negative temperature coefficient of the resistance (NTCR) behaviors analogous to a semiconductor and suggests a non-Debye type of electrical relaxation.     

Study on sulfur diffusion in CuInSe2 thin films using two thermal profiles

An insurmountable disadvantage of CuInSe₂ is the low band gap, which limits the open-circuit voltage to value well below 500 mV in solar cells. The incorporation of sulfur into CuInSe₂ thin film was investigated to establish a scientific basis for the graded band gap CuIn(Se_1 − x,S_x)₂ thin films. CuIn(Se_1 − x,S_x)₂ thin films were obtained by reactive annealing of Cu₁₁In₉ precursors in a mixture of sulfur and selenium atmosphere while post-sulfurization of single phase CuInSe₂ did not result in CuIn(Se_1 − x,S_x)₂ thin films. A band gap of 1.36 eV, was obtained for the prepared CuIn(Se_1 − x,S_x)₂.     

Dielectric properties of a new ceramic system (1 − x)Mg4Nb2O9-xCaTiO3 at microwave frequency

The microstructures and the microwave dielectric properties of the (1 − x)Mg₄Nb₂O₉-xCaTiO₃ ceramic system were investigated. In order to achieve a temperature-stable material, CaTiO₃ (τ_f ∼ 800 ppm/°C) was chosen as a τ_f compensator and added to Mg₄Nb₂O₉ (τ_f ∼ −70 ppm/°C) to form a two phase system. It was confirmed by the XRD and EDX analysis. By appropriately adjusting the x-value in the (1 − x)Mg₄Nb₂O₉-xCaTiO₃ ceramic system, near-zero τ_f value can be achieved. A new microwave dielectric material, 0.5Mg₄Nb₂O₉-0.5CaTiO₃ applicable in microwave devices is suggested and possesses the dielectric properties of a dielectric constant ?_r ∼ 24.8, a Q × f value ∼82,000 GHz (measured at 9.1 GHz) and a τ_f value ∼−0.3 ppm/°C.     

One-step synthesis and double emission (Ca1 + x − yEuy)Ga2S4 + x phosphor for white LEDs

(Ca_{1 + x − y}Eu_y)Ga₂S_4 + x phosphors have been synthesized one step by solid state reaction. The photoluminescence excitation and emission spectra of phosphors have been studied; the influence of host composition and Eu²⁺ concentration on emission spectra has also been investigated. The emission spectrum consists of yellow emission at 550 nm and red emission at 650 nm. It also indicates that the excitation spectrum is a broadband and can be well matched with the emission of GaN chip. Combined these phosphors with 460 nm-emitting GaN chips, White LEDs have been fabricated. Their electroluminescence spectra have been measured under 20 mA forward-bias current. Their CIE chromaticity coordinates and color temperature indicate that (Ca_{1 + x − y}Eu_y)Ga₂S_4 + x phosphors are promising phosphors for GaN-based white LEDs.     

Heterophase structures and their quantitative characteristics in (1 − x)Pb(Fe1/2Nb1/2)O3 − xPbTiO3 near the morphotropic phase boundary

Features of phase coexistence in solid solutions of (1 − x)Pb(Fe_1/2Nb_1/2)O₃ − xPbTiO₃ with the perovskite-type structure are studied at 0.05 ≤ x ≤ 0.08. The role of elastic matching of the tetragonal P4mm and monoclinic Cm phases of the ferroelectric nature is considered near the morphotropic phase boundary. Model concepts on the stress relief in heterophase structures are developed and applied to interpret the phase content in (1 − x)Pb(Fe_1/2Nb_1/2)O₃ − xPbTiO₃. Good agreement between the calculated and experimental dependences of the volume fraction of the tetragonal phase on x is observed. It is shown that the studied phase coexistence under conditions for the complete stress relief can take place at elastic matching of the single-domain monoclinic phase and the tetragonal phase split into two types of 90° domains.     

Synthesis of (1 − x)Ca2/5Sm2/5TiO3-xLi1/2Nd1/2TiO3 ceramic powder via ethylenediaminetetraacetic acid precursor

(1 − x)Ca_2/5Sm_2/5TiO₃-xLi_1/2Nd_1/2TiO₃ (CSLNT) ceramic powder was prepared by a liquid mixing method using ethylenediaminetetraacetic acid (EDTA) as the chelating agent. TG, DTA, XRD and TEM characterized the precursors and derived oxide powders. When x = 0.3, perovskite CSLNT was synthesized at 1000 °C for 3 h in air. The CSLNT (x = 0.3) ceramics sintered at 1200 °C for 3 h show excellent microwave dielectric properties of ?_r = 99, Q_f = 6200 GHz and τ_f = 9 × 10⁻⁶ °C⁻¹.     

The determination of interface state energy distribution of the H-terminated Zn/p-type Si Schottky diodes with high series resistance by the admittance spectroscopy

Analysis of Zn/p-Si Schottky diodes (SDs) with high resistivity has been given by admittance spectroscopy. The importance of the series resistance in the determination of energy distribution of interface states and especially their relaxation time in the SDs with high resistivity has been considered. The effect of the series resistance on capacitance-conductance/frequency characteristics has been given by comparing experimental data with theoretical data. The interface state density N_ss from the admittance spectroscopy ranges from 1.0×10¹² cm⁻² eV⁻¹ in 0.720-E_v eV to 2.03×10¹² cm⁻² eV⁻¹ in 0.420-E_v eV. Furthermore, the relaxation time ranges from 4.20×10⁻⁵ s in (0.420-E_v) eV to 3.20×10⁻⁴ s in (0.720-E_v) eV. It has been seen that the interface state density has a very small distribution range (1.0-2.03×10¹² cm⁻² eV⁻¹) that is ascribed to the predominant termination with hydrogen of the silicon surface after HF treatment.     

2D-network of inorganic-organic hybrid material built on Keggin type polyoxometallate and amino acid: [L-C2H6NO2]3[(PO4)Mo12O36]·5H2O

A new inorganic-organic hybrid material based on polyoxometallate, [L-C₂H₆NO₂]₃[(PO₄)Mo₁₂O₃₆]·5H₂O, has been successfully synthesized and characterized by single-crystal X-ray analysis, elemental analysis, infrared and ultraviolet spectroscopy, proton nuclear magnetic resonance and differential thermal analysis techniques. The title compound crystallizes in the monoclinic space group, P2₁/c_, with a = 12.4938 (8) Å, b = 19.9326 (12) Å, c = 17.9270 (11) Å, β = 102.129 (1)°, V = 4364.8 (5) Å³, Z = 4 and R₁(wR₂) = 0.0513, 0.0877. The most remarkable structural feature of this hybrid can be described as two-dimensional inorganic infinite plane-like (2D/∞ [(PO₄)Mo₁₂O₃₆]³⁻) which forming via weak Van der Waals interactions along the z axis. The characteristic band of the Keggin anion [(PO₄)Mo₁₂O₃₆]³⁻ appears at 210 nm in the UV spectrum. Thermal analysis indicates that the Keggin anion skeleton begins to decompose at 520 °C.     

Large magnetocaloric effect in Ti-modified La0.70Sr0.30MnO3 perovskite

The effect of Ti substitution on the magnetocaloric effect of the La_0.70Sr_0.30MnO₃ perovskite was investigated. The magnetic entropy change (− ΔS_M) was deduced by two methods: a Maxwell relation and the Landau theory. The magnetocaloric data displays a large value of the magnetic entropy change (− ΔS_M) near the Curie temperature (T_C = 210 K), which increases when increasing the applied magnetic field. A good agreement is found between the experimental (− ΔS_M) and the one estimated by Landau theory. The relative cooling power values vary from 49 to 288 J kg^− 1 upon variation of the applied magnetic field at 1 and 5 T. Under 5 T, the relative cooling power value for La_0.70Sr_0.30Mn_0.90Ti_0.10O₃ is about 70% of the conventional refrigerant Gd material. As a result, the herein reported compound can be considered as a promising material in magnetic refrigeration technology.     

MOCVD growth of HfSixOy films from hafnium β-diketonato silylamides and siloxides

New hafnium β-diketonato-silylamide and siloxides namely Hf(thd)₂[N(SiMe₃)₂]₂ (1), Hf(thd)₂(OSiMe₃)₂ (2) and Hf(thd)₂(OSi^tBuMe₂)₂ (3) (thd=2,2,6,6-tetramethyl-3,5-heptanedionate) were investigated as single-source precursors for low-pressure pulsed liquid injection MOCVD of HfSi_xO_y thin films on Si(1 0 0) and R-plane sapphire. Films were characterized by XRD, XPS and AFM. The growth rate increased in order 1>2>3 in agreement with the decreasing precursor thermal stability. The activation energy was ∼80-100 kJ/mol. The as-deposited at 550-800 °C films were essentially amorphous; hafnia reflections appeared after 1 h annealing at 900 °C probably due to phase separation into amorphous Si-rich silicate and crystallized HfO₂. The surface of the films showed similar amounts of Hf and Si (∼1:1) and was overstoichiometric in oxygen (ratio O/(Hf+Si) >2). The bulk of the films was Hf-rich (70-85% of Hf/ Hf+Si) and slightly oxygen-deficient. The new complexes are attractive single-source precursors for the deposition of pure and very smooth (R_a∼0.7 nm, <1% relative to thickness) HfSi_xO_y films. Dielectric constant 11.3 and leakage current density 8×10⁻⁴ A/cm² (at −1 V) were measured for a 22 nm thick film.     

Phase formation, microstructure, and dielectric properties of (1 − x)PZT-(x)PCN ceramics

Ceramics in a PZT-PCN system with the formula (1 − x)Pb(Zr_1/2Ti_1/2)O₃-(x)Pb(Co_1/3Nb_2/3)O₃, where x = 0.0, 0.1, 0.2, 0.3, 0.4, 0.5, and 1.0, were prepared using a solid-state mixed-oxide technique with columbite−CoNb₂O₆ and wolframite−ZrTiO₄ precursors. The crystal structure of the specimens studied with X-ray diffraction (XRD) analysis showed a coexistence between tetragonal and pseudo cubic phases at composition x = 0.2. The SEM micrograph showed that the average grain size significantly decreased with increasing PCN content. A maximum dielectric constant was observed at composition x = 0.2, while the transition temperature strongly decreased with increasing PCN content. All ceramics also showed diffused phase transition behaviors with a minimum diffusivity at x = 0.2. The morphotropic phase boundary (MPB) lay at the 0.8PZT-0.2PCN composition.