Transparent p/n diode device from a single zinc nitride sputtering target

Zinc oxide (ZnO) thin films showing bipolar conductivity were fabricated by sputtering of zinc nitride target in plasma containing mixture of Ar-O₂ gasses. Sputtering in pure Ar plasma produced conductive and opaque zinc nitride (ZnN) films while upon introduction of oxygen up to 30% into the plasma highly transparent single phase polycrystalline n-type ZnO films have been grown. ZnN sputtering in Ar plasma containing more than 30% oxygen produced p-type ZnO films. Hall-effect and photoluminescence measurements revealed the presence of zinc vacancies and nitrogen which are acting as acceptor dopants in p-type ZnO. A heterostructure was fabricated in a single deposition run consisting of n-ZnN and p-ZnO which exhibited rectifying behavior with 2-2.5 V turn-on voltage. Improvements on the formed p/n heterostructure as well as the potential of using single sputtering target in fabrication of Zn-based homo- and hetero-junctions are discussed.     

3D/2D Core/Shell Perovskite Nanocrystals for High-Performance Solar Cells

All-inorganic lead halide perovskite nanocrystals (NCs) emerge as a rising star in photovoltaic fields on account of their excellent optoelectronic properties. However, it still remains challenging to further promote photovoltaic efficiency due to the susceptible surface and inevitable vacancies. Here, this work reports a 3D/2D core/shell perovskite heterojunction based on CsPbI₃ NCs and its performance in solar cells. The guanidinium (GA⁺) rich 2D nanoshells can significantly passivate surface trap states and lower the capping ligand density, resulting in improved photoelectric properties and carrier transport and diminished nonradiative recombination centers via the hydrogen bonds from amino groups in GA⁺ ions. Consequently, an outstanding power conversion efficiency (PCE) of up to 15.53% is realized, substantially higher than the control device (13.77%). This work highlights the importance of surface chemistry and offers a feasible avenue to achieve high-performance perovskite NCs-based optoelectronic devices.     

Magnetic Field-Assisted Interface Embedding Strategy to Construct 2D/3D Composite Structure for Stable Perovskite Solar Cells with Efficiency Over 24%

Perovskite solar cells (PSCs) based on 2D/3D composite structure have shown enormous potential to combine high efficiency of 3D perovskite with high stability of 2D perovskite. However, there are still substantial non-radiative losses produced from trap states at grain boundaries or on the surface of conventional 2D/3D composite structure perovskite film, which limits device performance and stability. In this work, a multifunctional magnetic field-assisted interfacial embedding strategy is developed to construct 2D/3D composite structure. The composite structure not only improves crystallinity and passivates defects of perovskite layer, but also can efficiently promote vertical hole transport and provide lateral barrier effect. Meanwhile, the composite structure also forms a good surface and internal encapsulation of 3D perovskite to inhibit water diffusion. As a result, the multifunctional effect effectively improves open-circuit voltage and fill factor, reaching maximum values of 1.246 V and 81.36%, respectively, and finally achieves power conversion efficiency (PCE) of 24.21%. The unencapsulated devices also demonstrate highly improved long-term stability and humidity stability. Furthermore, an augmented performance of 21.23% is achieved, which is the highest PCE of flexible device based on 2D/3D composite perovskite films coupled with the best mechanical stability due to the 2D/3D alternating structure.     

Core/Shell ZnO/ZnS Nanoparticle Electron Transport Layers Enable Efficient All-Solution-Processed Perovskite Light-Emitting Diodes

Solution-processed perovskite-based light-emitting diodes (PeLEDs) are promising candidates for low-cost, large-area displays, while severe deterioration of the perovskite light-emitting layer occurs during deposition of electron transport layers from solution in an issue. Herein, core/shell ZnO/ZnS nanoparticles as a solution-processed electron transport layer in PeLED based on quasi-2D PEA₂Cs_n−1Pb_nBr_3n+1 (PEA = phenylethylammonium) perovskite are employed. The deposition of ZnS shell mitigates trap states on ZnO core by anchoring sulfur to oxygen vacancies, and at the same time removes residual hydroxyl groups, which helps to suppress the interfacial trap-assisted non-radiative recombination and the deprotonation reaction between the perovskite layer and ZnO. The core/shell ZnO/ZnS nanoparticles show comparably high electron mobility to pristine ZnO nanoparticles, combined with the reduced energy barrier between the electron transport layer and the perovskite layer, improving the charge injection balance in PeLEDs. As a result, the optimized PeLEDs employing core/shell ZnO/ZnS nanoparticles as a solution-processed electron transport layer exhibit high peak luminance reaching 32 400 cd m⁻², external quantum efficiency of 10.3%, and 20-fold extended longevity as compared to the devices utilizing ZnO nanoparticles, which represents one of the highest overall performances for solution-processed PeLEDs.     

Electrical transport properties of peptide nanotubes coated with gold nanoparticles via peptide-induced biomineralization

We present temperature dependent electrical transport measurements of peptide nanotube devices coated with monodisperse arrays of gold nanoparticles (AuNP). As the temperature is lowered, the current-voltage (I-V) characteristics become increasingly nonlinear and below 20 K conduction only occurs above a threshold voltage V(T). The current follows the scaling behavior I ∝ [(V ? V(T))/V(T)]α for V > V(T) with α ～ 2.5 signifying two-dimensional (2D) charge transport. The temperature dependence of the resistance shows thermally activated behavior with an activation energy of 18.2 meV corresponding to the sequential tunneling of charges through 6 nm monodispersed AuNP arrays grown on a peptide surface.     

Spin-Polarized Bipolar Transport and Its Applications

In spin-polarized bipolar transport both electrons and holes in doped semiconductors contribute to spin–charge coupling. The current conversion between the minority (as referred to carriers and not spin) and majority carriers leads to novel spintronic schemes if nonequilibrium spin is present. Most striking phenomena occur inhomogeneously doped magnetic p–n junctions, where the presence of nonequilibrium spin at the depletion layer leads to the spin-voltaic effect: Electric current flows without external bias, powered only by spin. The spin-voltaic effect manifests itself in giant magnetoresistance of magnetic p–n junctions, where the relative change of the magnitude of electric current upon reversing magnetic field can be more than 1000%. The paper reviews nonmagnetic and magnetic spin-polarized p–n junctions, formulates the essentials of spin-polarized bipolar transport as carrier recombination and spin relaxation limited drift and diffusion, and discusses specific device schemes of spin-polarized solar cells and magnetic diodes.     

Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode

The heterojunction of a Pd-doped p-GaN nanowire and n-Si (100) is fabricated vertically by the vapor-liquid-solid method. The average diameter of the nanowire is 40 nm. The vertical junction reveals a significantly high rectification ratio of 10(3) at 5 V, a moderate ideality factor of ～2, and a high breakdown voltage of ～40 V. The charge transport across the p-n junction is dominated by the electron-hole recombination process. The voltage dependence of capacitance indicates a graded-type junction. The resistance of the junction decreases with an increase in the bias voltage confirmed by impedance measurements.     

n‐Type Doped Conjugated Polymer for Nonvolatile Memory

This study demonstrates a facile way to efficiently induce strong memory behavior from common p‐type conjugated polymers by adding n‐type dopant 2‐(2‐methoxyphenyl)‐1,3‐dimethyl‐2,3‐dihydro‐1H‐benzoimidazole. The n‐type doped p‐channel conjugated polymers not only enhance n‐type charge transport characteristics of the polymers, but also facilitate to storage charges and cause reversible bistable (ON and OFF states) switching upon application of gate bias. The n‐type doped memory shows a large memory window of up to 47 V with an on/off current ratio larger than 10 000. The charge retention time can maintain over 100 000 s. Similar memory behaviors are also observed in other common semiconducting polymers such as poly(3‐hexyl thiophene) and poly[2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b]thiophene], and a high mobility donor–acceptor polymer, poly(isoindigo‐bithiophene). In summary, these observations suggest that this approach is a general method to induce memory behavior in conjugated polymers. To the best of the knowledge, this is the first report for p‐type polymer memory achieved using n‐type charge‐transfer doping.     

Resistance Random Access Memory Based on a Thin Film of CdS Nanocrystals Prepared via Colloidal Synthesis

We demonstrate that resistance random access memory (RRAM) can be fabricated based on CdS-nanocrystal thin films. A simple drop-drying of the CdS-nanocrystal solution leads to the formation of uniform thin films with controlled thickness. RRAMs with a Ag/Al(2) O(3) /CdS/Pt structure show bipolar switching behavior, with average values of the set voltage (V(Set) ) and reset voltage (V(Reset) ) of 0.15 V and -0.19 V, respectively. The RRAM characteristics are critically influenced by the thickness of the Al(2) O(3) barrier layer, which prevents significant migration of Ag into the CdS layer as revealed by Auger electron spectroscopy (AES). Interestingly, RRAM without an Al(2) O(3) layer (i.e., Ag/CdS/Pt structure) also shows bipolar switching behavior, but the polarity is opposite to that of RRAM with the Al(2) O(3) layer (i.e., Ag/Al(2) O(3) /CdS/Pt structure). The operation of both kinds of devices can be explained by the conventional conductive bridging mechanism. Additionally, we fabricated RRAM devices on Kapton film for potential applications in flexible electronics, and the performance of this RRAM device was comparable to that of RRAMs fabricated on hard silicon substrates. Our results show a new possibility of using chalcogenide nanocrystals for RRAM applications.     

Quantum mechanical device modeling: FinFET having an isolated n+/p+ gate region strapped with poly-silicon

In this paper, we present our numerical study on FinFET having an isolated n+/p+ gate region strapped with metal and poly-silicon structure. Our theoretical work is based on 2-D quantum-mechanical simulator with a self-consistent solution of Poisson-Schr?dinger equation. Our numerical simulation revealed that the threshold voltage (VT) is controlled within -0.1 approximately +0.2 V with varying the doping concentration of the n+ and p+ polysilicon gate region from 1.0 x 10(17) to 1.0 x 10(18) cm(-3). We also confirmed that the better VT tolerance of the FinFET on the variation of the fin thickness can be expected over the conventional FinFET structure. For instance, the VT of the FinFET under this work exhibited 0.02 V tolerance with respect to the variation of the fin thickness change of 5 nm (from 30 to 35 nm) while the traditional FinFET demonstrates the tolerance of 0.12 V for the same variation of the fin thickness.     

基于对氯苄胺的2D/3D钙钛矿太阳能电池

三维(3D)有机–无机金属卤化物钙钛矿薄膜的表面和晶界处存在大量缺陷,容易导致载流子的非辐射复合并加快3D钙钛矿分解,进而影响钙钛矿太阳能电池(PSCs)能量转换效率(PCE)及稳定性.本研究通过引入对氯苄胺阳离子,与3D钙钛矿薄膜及其表面过剩的碘化铅反应后原位形成了二维(2D)钙钛矿,实现了对3D钙钛矿薄膜表面和晶界...     

Electronic transport through ruthenium-based redox-active molecules in metal-molecule-metal nanogap junctions

Electronic transport through ruthenium-based redox-active organometallic molecules is measured by self-assembling diruthenium(III) tetra(2-anilinopyridinate)-di(4-thiolphenylethynyl) (trans-Ru2(ap)4(C'CC6H4S-)2 (A) and trans- Ru2(ap)4((C'CC6H4)2S-)2 (B) molecules in nanogap molecular junctions. Voltage sweeps at a high scan rate show low bias current peaks (at +/-0.35 +/- 0.05 V for A and +/-0.27 +/- 0.05 V for B), which change to plateaus in slow bias scans and a second conductance peak at approximately +/-1.05 +/- 0.15 V. The peaks/plateaus are not observed in the return bias sweeps, possibly due to charge storage in the molecules. The energy states for the molecular orbitals of these molecules as estimated from the conductance peaks are in close agreement with the respective energy values from voltammetric measurements in solution.     

Al2O3 formation on Si by catalytic chemical vapor deposition

Catalytic chemical vapor deposition (Cat-CVD) has been developed to deposit alumina (Al₂O₃) thin films on silicon (Si) crystals using N₂ bubbled tri-methyl aluminum [Al(CH₃)₃, TMA] and molecular oxygen (O₂) as source species and tungsten wires as a catalyzer. The catalyzer dissociated TMA at approximately 600 °C. The maximum deposition rate was 18 nm min⁻¹ at a catalyzer temperature of 1000 °C and substrate temperature of 800 °C. Metal oxide semiconductor (MOS) diodes were fabricated using gates composed of 32.5-nm-thick alumina film deposited at a substrate temperature of 400 °C. The capacitance measurements resulted in a relative dielectric constant of 7.4, fixed charge density of 1.74×10¹² cm⁻², small hysteresis voltage of 0.12 V, and very few interface trapping charges. The leakage current was 5.01×10⁻⁷ A cm⁻² at a gate bias of 1 V.     

Electrical characteristics and stability of gold and palladium Schottky contacts on ZnO nanorods

The electrical characteristics and stability of Pd and Au Schottky contacts on ZnO nanorods grown on glass substrate have been investigated. The nanorods were grown using the aqueous chemical growth method. The nanorods were characterized with scanning electron microscopy (SEM), x-ray diffraction (XRD) and photoluminescence (PL). Prior to the metal contact deposition, an insulating PMMA layer was deposited between the nanorods. The best-produced Schottky contact was an as-deposited Pd/ZnO contact with an ideality factor of 1.74 ± 0.43 and a barrier height of 0.67 ± 0.09?eV. The relatively high ideality factor indicates that the current transport cannot be described by pure thermionic transport. The presence of surface states due to the high evaporation pressure is probably the reason for the high ideality factor. Post metal deposition annealing at 150?°C for 30?min in air lowered the barrier height and decreased the Au/ZnO ideality factor but increased it for Pd/ZnO. The current follows ohmic behavior when the applied forward bias, V(forward), is lower than 0.1?V, whereas for V(forward) between 0.1 and 0.45?V the current follows I～exp(cV), and at higher forward biases the current-voltage characteristics follow the relation I～V(2), indicating that the space-charge current-limiting mechanism is dominating the current transport.     

Electrical characterization and carrier transport mechanisms of GaAs p/i/n devices for photovoltaic applications

GaAs p/i/n diodes made by Metal-Organic Vapour Phase Epitaxy were examined by electrical measurements for evaluating the optimum i-region for use as solar cells. Four series of samples were prepared and studied each one with a different i-region width. The performance of the devices was examined by means of Admittance spectroscopy as well as classical current–voltage and capacitance–voltage characterization, allowing the calculation of the minority carriers lifetime (τ_eff) and the diodes ideality factors. The values of the τ_eff were found to lie between 8.7 ps and 0.14 ns for i-region widths between 0 and 0.8 μm. These results were used to model the multilayer structure with the two-diode representation and explain the conductance mechanisms inside the diodes. This modeling showed that the recombination/generation currents were dominating in forward biased diodes and the ohmic loss current in reverse bias.     

Electrical contact properties between the accumulation layer and metal electrodes in ultrathin poly(3-hexylthiophene)(P3HT) field effect transistors

Probing contact properties between an ultrathin conjugated polymer film and metal electrodes in field effect transistors (FETs) is crucial not only to understanding charge transport properties in the accumulation layer but also in building organic sensors with high sensitivity. We investigated the contact properties between gold electrodes and poly(3-hexylthiophene) (P3HT) as a function of film thickness using gated four-point sheet resistance measurements. In an FET with a 2 nm thick P3HT film, a large voltage drop of 1.9 V (V(D) = -3 V) corresponding to a contact resistance of 2.3 × 10(8) Ω was observed. An effective FET mobility of 1.4 × 10(-3) cm(2)/(V s) was calculated when the voltage drop at the contacts was factored out, which is approximately a factor of 3 greater than the two-contact FET mobility of 5.5 × 10(-4) cm(2)/(V s). A sharp decrease in the ratio of the contact resistance to the channel resistance was observed with increasing film thickness up to a thickness of approximately 6 nm, separating a contact limited regime from a charge transport limited regime. The origin of the large contact resistance observed in the device prepared with an ultrathin P3HT film is discussed in light of results from X-ray diffraction (XRD) and atomic force microscopy (AFM) studies.     

WSe2 Photovoltaic Device Based on Intramolecular p–n Junction

High quality p–n junctions based on 2D layered materials (2DLMs) are urgent to exploit, because of their unique properties such as flexibility, high absorption, and high tunability which may be utilized in next‐generation photovoltaic devices. Based on transfer technology, large amounts of vertical heterojunctions based on 2DLMs are investigated. However, the complicated fabrication process and the inevitable defects at the interfaces greatly limit their application prospects. Here, an in‐plane intramolecular WSe₂ p–n junction is realized, in which the n‐type region and p‐type region are chemically doped by polyethyleneimine and electrically doped by the back‐gate, respectively. An ideal factor of 1.66 is achieved, proving the high quality of the p–n junction realized by this method. As a photovoltaic detector, the device possesses a responsivity of 80 mA W^?1 (≈20% external quantum efficiency), a specific detectivity of over 10¹¹ Jones and fast response features (200 µs rising time and 16 µs falling time) at zero bias, simultaneously. Moreover, a large open‐circuit voltage of 0.38 V and an external power conversion efficiency of ≈1.4% realized by the device also promises its potential in microcell applications.     

Periodic FTO IOs/CdS NRs/CdSe Clusters with Superior Light Scattering Ability for Improved Photoelectrochemical Performance

Periodic fluorine‐doped tin oxide inverse opals (FTO IOs) grafted with CdS nanorods (NRs) and CdSe clusters are reported for improved photoelectrochemical (PEC) performance. This hierarchical photoanode is fabricated by a combination of dip‐coating, hydrothermal reaction, and chemical bath deposition. The growth of 1D CdS NRs on the periodic walls of 3D FTO IOs forms a unique 3D/1D hierarchical structure, providing a sizeable specific surface area for the loading of CdSe clusters. Significantly, the periodic FTO IOs enable uniform light scattering while the abundant surrounded CdS NRs induce additional random light scattering, combining to give multiple light scattering within the complete hierarchical structure, significantly improving light‐harvesting of CdS NRs and CdSe clusters. The high electron collection ability of FTO IOs and the CdS/CdSe heterojunction formation also contribute to the enhanced charge transport and separation. Due to the incorporation of these enhancement strategies in one hierarchical structure, FTO IOs/CdS NRs/CdSe clusters present an improved PEC performance. The photocurrent density of FTO IOs/CdS NRs/CdSe clusters at 1.23 V versus reversible hydrogen electrode reaches 9.2 mA cm^?2, which is 1.43 times greater than that of CdS NRs/CdSe clusters and 3.83 times of CdS NRs.     

Surface-2D/Bulk-3D Heterophased Perovskite Nanograins for Long-Term-Stable Light-Emitting Diodes

Although metal halide perovskite (MHP) light-emitting diodes (LEDs) have demonstrated great potential in terms of electroluminescence efficiency, the operational stability of MHP LEDs currently remains the biggest bottleneck toward their practical usage. Well-confined excitons/charge carriers in a dielectric/quantum well based on conventional spatial or potential confinement approaches substantially enhance radiative recombination in MHPs, but an increased surface-to-volume ratio and multiphase interfaces likely result in a high degree of surface or interface defect states, which brings about a critical environmentally/operationally vulnerable point on LED stability. Here, an effective solution is suggested to mitigate such drawbacks using strategically designed surface-2D/bulk-3D heterophased MHP nanograins for long-term-stable LEDs. The 2D surface-functionalized MHP renders significantly reduced trap density, environmental stability, and an ion-migration-immune surface in addition to a fast radiative recombination owing to its spatially and potentially confined charge carriers, simultaneously. As a result, heterophased MHP LEDs show substantial improvement in operational lifetime (T₅₀: >200 h) compared to conventional pure 3D or quasi-2D counterparts (T₅₀: < 0.2 h) as well as electroluminescence efficiency (surface-2D/bulk-3D: ≈7.70 ph per el% and pure 3D: ≈0.46 ph per el%).     

Study of surface-modified PVP gate dielectric in organic thin film transistors with the nano-particle silver ink source/drain electrode

We have fabricated the flexible pentacene based organic thin film transistors (OTFTs) with formulated poly[4-vinylphenol] (PVP) gate dielectrics treated by CF4/O2 plasma on poly[ethersulfones] (PES) substrate. The solution of gate dielectrics is made by adding methylated poly[melamine-co-formaldehyde] (MMF) to PVP. The PVP gate dielectric layer was cross linked at 90 degrees under UV ozone exposure. Source/drain electrodes are formed by micro contact printing (MCP) method using nano particle silver ink for the purposes of low cost and high throughput. The optimized OTFT shows the device performance with field effect mobility of the 0.88 cm2/V s, subthreshold slope of 2.2 V/decade, and on/off current ratios of 1.8 x 10(-6) at -40 V gate bias. We found that hydrophobic PVP gate dielectric surface can influence on the initial film morphologies of pentacene making dense, which is more important for high performance OTFTs than large grain size. Moreover, hydrophobic gate dielelctric surface reduces voids and -OH groups that interrupt the carrier transport in OTFTs.