Fabrication and photovoltaic properties of heterostructured TiO2 nanowires

One-dimensional heterostructured TiO2 nanowires were successfully fabricated by an electrospinning technique and modified by hydrolysis. We investigated their structure, morphology, chemical composition, and optical properties by using the X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and UV-vis spectroscopy. In the case of the photovoltaic performance, the short-circuit current density and cell efficiency of the DSSCs employing single TiO2 nanowires and heterostructured TiO2 nanowires improve from 6.90 to 11.38 mA/cm2 and from 2.56 to 4.29%, respectively. The results show that the photoconversion efficiency of the heterostructured TiO2 nanowires could be improved by more than approximately 67% compared to that of the single TiO2 nanowires because of the enhanced specific surface area that facilitates dye adsorption.     

Fabrication of large-scale ultra-fine Cd-doped ZnO nanowires

We demonstrate bulk synthesis of highly crystal Cd-doped ZnO nanowires by using (Cd + Zn) powders at 600 °C. These mass ultra-fine ZnO nanowires with about 0%, 1%, 4% and 8% Cd so obtained have been characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), selected area electron diffraction (SAED) and high-resolution TEM (HRTEM). They have the uniform diameter of about 20 nm and several hundred microns in length. The growth of the as-synthesized nanowires is suggested for self-catalyzed vapor–liquid–solid.     

ZnO纳米锥光致发光性及印刷ZnO纳米锥场发射性能研究

利用物理热蒸发法制备大规模的蒲公英状的ZnO纳米锥,利用荧光光谱仪对ZnO纳米锥进行了光致发光性能测试.针对现有的丝网印刷碳纳米管(CNTs)薄膜需要各种后处理工艺后才能改善其场发射特性的问题,提出了一种不需任何后处理丝网印刷ZnO纳米锥的浆料配制工艺.用该工艺制备的丝网印刷ZnO纳米锥的场发射特性测试表明,ZnO纳米锥与制浆剂质量比为3∶5的薄膜的开启场强最低为2.25V/μm(电流密度为1μA/cm2),在4.6V/μm场强下,阳极荧光粉的发光点亮度高且分布均匀.说明该方法成本低,工艺简单,无需任何后处理,在ZnO纳米锥场发射显示器的制作中有很好的实际应用价值.     

Fabrication of p-type ZnO nanowires based heterojunction diode

Vertically aligned p-type ZnO (Li–N co-doped) nanowires have been synthesized by hydrothermal method on n-type Si substrate. X-ray diffraction pattern indicated a strong peak from (0 0 0 2) planes of ZnO. The appearance of a strong peak at 437 cm⁻¹ in Raman spectra was attributed to E₂ mode of ZnO. Fourier transformed infrared studies indicated the presence of a distinct characteristic absorption peaks at 490 cm⁻¹ for ZnO stretching mode. Compositional studies revealed the formation of Li–N co-doped ZnO, where Li was bonded with both O and N. The junction properties of p-type ZnO nanowires/n-Si heterojunction diodes were evaluated by measuring I–V and C–V characteristics. I–V characteristics exhibited the rectifying behavior of a typical p–n junction diode.     

Electron field emission studies on ZnO nanowires

The zinc oxide (ZnO) nanowires with different morphology and diameter were synthesized on silicon (100) substrates by heating pure zinc powder at low temperatures of 450 °C and 480 °C. Scanning electron microscopy (SEM) was used to analyze the morphology and diameter of samples. The electron field emission properties between different morphology of ZnO nanowires samples were compared. A low turn-on field at 3.6 V/μm was observed from nanorods due to better alignment, and a strong emission current density of 3.6 mA/cm² at electronic field 9.0V/μm was obtained from needle-like nanowires sample. The emission stability of ZnO samples is also presented.     

Fabrication and optical properties of Sb-doped CdS nanowires

Sb-doped CdS nanowires with an average diameter of 30 nm and lengths of up to 20-30 μm are fabricated by chemical vapor approach. The as-synthesized products have a single-crystal phase and grow along the <011> direction. The growth of Sb-doped CdS nanowires is suggested for Quasi-vapor-solid mechanism (QVSM). In particular, the PL spectra show enhancing emission peaks that strongly shift to long wavelength (up to 55 nm redshift) with a doping Sb where Sb-doped CdS nanowires are found to be responsible for the different characteristics. The PL mechanism is explained in detail.     

Co^2＋掺杂ZnO纳米线的制备与光学特性的研究

在十六烷基三甲基溴化铵表面活性剂辅助下,通过水热合成法制备了Co2 掺杂ZnO纳米线.纳米线的直径为100～160nm,长度约为10μm.纳米线沿(001)方向生长.Co2 掺杂ZnO纳米线紫外-可见(UV-vis)吸收光谱曲线,显示掺杂的ZnO纳米线在200～300nm波段之间都有很强的紫外吸收,在波长360～370nm处显示很好的激子吸收,与体相的激子吸收峰(373nm)相比产生了蓝移.纳米线分别在385、409、433、462和495nm波段表现出发光特性,简略的讨论了其发光机制.     

Enhancement of green emission from Sn-doped ZnO nanowires

Oxygen vacancies play a crucial role in the emission characteristics of oxide nanomaterials. In this study, we found that the green emission intensity of ZnO nanowires can be enhanced through a Sn-doping concentration which increases the number of oxygen vacancies. Undoped ZnO nanowires showed blue emission at 380 nm, but as the concentration of Sn was increased, the green emission peak at around 500 nm, which is attributed to oxygen vacancies, showed drastic enhancement. On the basis of XPS compositional analysis, it was confirmed that the green luminescence intensity was closely related to the number of oxygen vacancies in Sn-doped ZnO nanowires. These results pave the way to a greater understanding of tunable light emission from nanowires, which could be a key technology for next-generation display devices, including flexible and transparent displays.     

Structural and optical properties of glancing angle deposited TiO2 nanowires array

TiO2 nanowires (NWs) have been synthesized by glancing angle deposition technique using e-beam evaporator. The average length 490 nm and diameter 80 nm of NWs were examined by field emission-scanning electron microscopy. Transmission electron microscopy emphasized that the NWs were widely dispersed at the top. X-ray diffraction has been carried out on the TiO2 thin film (TF) and NW array. A small blue shift of 0.03 eV was observed in Photoluminescence (PL) main band emission for TiO2 NW as compared to TiO2 TF. The high temperature annealing at 980 degrees C partially removed the oxygen vacancy from the sample, which was investigated by PL and optical absorption measurements.     

Crabwise ZnO nanowires: growth and field emission properties

Crabwise ZnO nanowires with an average length of 5 microm and an average diameter of 30 nm were selectively grown on ZnO:Ga/glass templates. Cathodoluminescence measurement indicated that the crystal quality of the crabwise ZnO nanowires was good. With an applied voltage of 120 V, the crabwise ZnO nanowire field emitters gave an emission current of 0.1 mA/cm2. Moreover, the field enhancement factor, beta, of the crabwise ZnO nanowires was approximately 980.     

High quantum efficiency of band-edge emission from ZnO nanowires

External quantum efficiency (EQE) of photoluminescence as high as 20% from isolated ZnO nanowires were measured at room temperature. The EQE was found to be highly dependent on photoexcitation density, which underscores the importance of uniform optical excitation during the EQE measurement. An integrating sphere coupled to a microscopic imaging system was used in this work, which enabled the EQE measurement on isolated ZnO nanowires. The EQE values obtained here are significantly higher than those reported for ZnO materials in forms of bulk, thin films or powders. Additional insight on the radiative extraction factor of one-dimensional nanostructures was gained by measuring the internal quantum efficiency of individual nanowires. Such quantitative EQE measurements provide a sensitive, noninvasive method to characterize the optical properties of low-dimensional nanostructures and allow tuning of synthesis parameters for optimization of nanoscale materials.     

Structural and optical properties of single-crystalline ultraviolet-emitting needle-shaped ZnO nanowires

Well-crystallized with excellent optical properties, needle-shaped ZnO nanowires have been synthesized on silicon substrate in a high density via the thermal evaporation of metallic zinc powder without the use of catalysts or additives. Extensive structural analysis showed that the grown nanowires are highly crystalline with the wurtzite hexagonal phase, grown along the [0001] in the c-axis direction. The presence of an optical-phonon E₂ mode in Raman spectrum at 437 cm^{− 1} and sharp and strong UV emission at 379 nm with no green emission in the room-temperature photoluminescence (PL) spectrum confirms good crystallinity with the excellent optical properties for the deposited nanowires.     

基于氧化锌纳米线表面传导场发射阴极的研究

利用热蒸发和丝网印刷技术在玻璃基底上成功制备了氧化锌纳米线表面传导场发射阴极阵列,并测试其场发射性能。扫描电镜表明,在氩气和氧气流量分别为60和1mL/min,反应温度550℃保温30min条件下制备的氧化锌纳米线均匀垂直生长在玻璃基底上,直径大约在80～200nm,长度〉7μm。场发射测试表明,在阳压2000V和阴阳间距为500μm时,ZnO纳米线表面传导场发射阴极的开启电压为70V;在栅压为96V时,电子发射效率为26.2%,高于传统报道的表面传导电子发射器件,在经过80min的老练后发射接近稳定,平均发射电流接近135μA,表明ZnO纳米线表面传导场发射阴极有着稳定高效的场发射性能。     

MWCNT/ZnO纳米线复合阴极薄膜的场发射特性

实验提出以多壁碳纳米管(MWCNT)/ZnO纳米线复合材料作为场发射阴极薄膜,研究其图形化制备工艺以及其场发射特性.用丝网印刷工艺制备图形化MWCNT/ZnO纳米线复合阴极薄膜,实验获得合适的浆料配比以及适合的烘烤和烧结温度.对MWCNT/ZnO纳米线样品进行SEM分析和场发射特性测试,发现图形化阴极设计提高了场发射电流,并且改善场发射发光均匀度;材料组分的低维化明显降低场发射开启电压;加电老练处理有效改善场发射特性.     

Sn催化的Ga掺杂ZnO纳米线的制备及其光致发光性能研究

采用化学气相沉积的方法,以Sn粉为催化剂制备出大长径比的Ga掺杂ZnO纳米线。采用扫描电子显微镜观察制备的产物,发现样品为直径约25～90nm的纳米线。通过比较不同Ga掺杂含量样品的室温光致发光谱,发现一定掺杂含量的Ga可以提高ZnO纳米线的紫外发光强度,同时,Ga的掺杂也会引起ZnO紫外发光峰的蓝移。随着Ga含量的增加,蓝移程度越来越小,甚至发生红移。Sn的引入只对Ga掺杂ZnO纳米线的蓝绿光有贡献。     

梳状氧化锌纳米材料的制备及结构、性能的表征

通过纯锌粉蒸发，在600-650℃无催化条件下成功制备了高质量的梳状ZnO纳米结构。通过扫描电镜（SEM）及高分辨透射电镜（HRTEM）观察，所制备的梳状ZnO纳米结构具有两种典型形貌，且皆为单晶结构，分析表明其生长由气-固生长机理控制。室温光致发光谱显示，梳状ZnO纳米结构在385nm附近形成紫外发射峰；在以495nm为中心的范围内，形成较宽的绿光发射峰。     

Structural and optical characterizations of nitrogen-doped ZnO nanowires grown by MOCVD

One dimensional nitrogen-doped ZnO nanowires were deposited on C-plane sapphire using metal organic chemical vapour deposition. Nanowires have been characterized by scanning electron microscopy, transmission electron microscopy, micro-Raman scattering and micro-photoluminescence spectroscopy. The structural analysis has shown a high crystalline quality. In N-doped ZnO nanowires nitrogen incorporation was emphasized by Raman spectral analysis and reduction of nitrogen concentration along the wire, from the bottom to the top was found by local analysis. Low temperature micro-photoluminescence spectra exhibit donor-acceptor pair transitions.     

Fabrication of vertical ZnO nanowires on silicon (100) with epitaxial ZnO buffer layer

Vertical ZnO nanowires were successfully grown on epitaxial ZnO (002) buffer layer/Si (100) substrate. The nanowire growth process was controlled by surface morphology and orientation of the epitaxial ZnO buffer layer, which was deposited by radio-frequency (rf) sputtering. The copper catalyzed the vapor-liquid-solid growth of ZnO nanowires with diameter of approximately 30 nm and length of approximately 5.0 microm. The perfect wurtzite epitaxial structure (HCP structure) of the ZnO (0002) nanowires synthesized on ZnO (002) buffer layer/Si (100) substrate results in excellent optical characteristics such as strong UV emission at 380 nm with potential use in nano-optical and nano-electronic devices.     

Synthesis of optical quality ZnO nanowires utilizing ultrasonic spray pyrolysis

ZnO nanowires were grown by an ultrasonic spray pyrolysis technique. The aspect ratio and size of the wire were dependent mainly on the pH value of a precursor solution and the growth temperature. By high-resolution transmission electron microscopic analysis and photoluminescence measurements, it was confirmed that the nanowires are monocrystalline with good optical quality.