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1.
Photosensitive Centers in CdTe〈Ge〉, CdTe〈Sn〉, and CdTe〈Pb〉 总被引:1,自引:0,他引:1
P. N. Gorlei O. A. Parfenyuk M. I. Ilashchuk K. S. Ul'yanitskii V. R. Burachek S. N. Chupyra 《Inorganic Materials》2003,39(11):1127-1131
The spectral and temperature dependences of photoconductivity in CdTePb crystals under band-gap and combined excitation were studied at photon energies in the range 0.53–1.7 eV and temperatures from 80 to 300 K. The high photosensitivity of the crystals and the observed IR and temperature quenching of photoconductivity indicate that, just as in CdTeGe and CdTeSn, the recombination processes in CdTePb are dominated by deep centers with drastically different capture cross sections for electrons and holes. Some parameters of the centers are determined. The results suggest that the likely defect species responsible for the high photosensitivity of CdTePb is an acceptor complex consisting of a Cd vacancy and a metal (Ge, Sn, Pb) ion on the Cd site: (V
2–
CdM+)–/0. 相似文献
2.
Yu. V. Shaldin 《Inorganic Materials》2001,37(6):560-563
The magnetic susceptibility of high-resistivity CdTeIn and CdTeCl crystals was measured between 4.2 and 300 K. The susceptibility was found to vary anomalously with temperature. Below 50 K, all the samples were paramagnetic. The observed anomalies are interpreted in terms of donor–acceptor pairs formed by native defects and dopant or uncontrolled impurity atoms. The effect of doping on the 300-K is related to the Van Vleck paramagnetic contribution resulting from the local electric fields of Xi–V
Cdand Ini–V
Cddefect complexes. In CdTeCl, this contribution is insignificant. 相似文献
3.
Zhiyong Chen Xinming Zhang Chuming Liu Zhuoping Zhou Saiyi Li 《Journal of Materials Science》2002,37(13):2843-2848
The co-yield surfaces in fcc single crystals for slip on 11111110 and twinning on {111}112 systems have been analyzed and derived systematically for the first time. The results demonstrated that only if the ratio of the critical resolved shear stress (CRSS) for twinning to that for slip is within the range of
, slip and twinning can occur together. There are only two types of co-yield surfaces when is within this range. The corresponding analytical expressions of all possible types of yield vertices are also derived and tabulated. One type consists of 259 co-yield stress states when
, which can be classified into 21 groups in stress space according to the crystal symmetry. The other type contains 259 co-yield stress states also when
, which can be subdivided into 19 groups. Of the two types of the co-yield stress states, 139 ones are common and 120 ones are different. 相似文献
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《Thin solid films》1986,143(1):63-72
We investigated the growth rates of Ni2Si, NiSi, Pt2Si, PtSi and CrSi2 formed on a Si〈100〉 (Sic) or an evaporated silicon (Sie, which is amorphous) substrate during thermal annealing. The same phases of silicides were found on Sic and Sie. The growth rates of the silicides formed on Sic were similar to those formed on Sie. The formation temperature of CrSi2 was about 50°C lower on Sie than on Sic, and the CrSi2 film was laterally more uniform on Sie than on Sic. We summarize here the results of this and other investigations (e.g. Pd2Si, Co2Si, CoSi, CoSi2, NiSi2, TiSi2, and ErSi2) on the differences in the kinetics of silicides formed on the two substrate types. 相似文献
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