多孔硅表面的Al2O3钝化处理

用A12O3钝化的方法对多孔硅进行了后处理,获得了光致发光强度强、发光稳定的样品。通过对样品进行傅里叶变换红外吸收谱的测试和分析,指出了A12O3结构的产生是实验中多孔硅发光稳定性提高的原因。     

Improved Interface and Electrical Properties by Inserting an Ultrathin SiO2 Buffer Layer in the Al2O3/Si Heterojunction

An ultrathin SiO₂ interfacial buffer layer is formed using the nitric acid oxidation of Si (NAOS) method to improve the interface and electrical properties of Al₂O₃/Si, and its effect on the leakage current and interfacial states is analyzed. The leakage current density of the Al₂O₃/Si sample (8.1 × 10^?9 A cm^?2) due to the formation of low‐density SiO_x layer during the atomic layer deposition (ALD) process, decreases by approximately two orders of magnitude when SiO₂ buffer layer is inserted using the NAOS method (1.1 × 10^?11 A cm^?2), and further decreases after post‐metallization annealing (PMA) (1.4 × 10^?12 A cm^?2). Based on these results, the influence of interfacial defect states is analyzed. The equilibrium density of defect sites (N_d) and fixed charge density (N_f) are both reduced after NAOS and then further decreased by PMA treatment. The interface state density (D_it) at 0.11 eV decreases about one order of magnitude from 2.5 × 10¹² to 7.3 × 10¹¹ atoms eV^?1 cm^?2 after NAOS, and to 3.0 × 10¹⁰ atoms eV^?1 cm^?2 after PMA. Consequently, it is demonstrated that the high defect density of the Al₂O₃/Si interface is drastically reduced by fabricating ultrathin high density SiO₂ buffer layer, and the insulating properties are improved.     

fmax为30.8GHz的超薄Al2O3绝缘栅GaN MOS-HEMT器件

报道了一种利用原子层淀积(ALD)生长超薄(3.5nm)Al2O3为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT).新型AlGaN/GaN MOS-HEMT器件栅长1μm,栅宽120μm,栅压为+3.0V时最大饱和输出电流达到720mA/mm,最大跨导达到130mS/mm,开启电压保持在-5.0V,特征频率和最高振荡频率分别为10.1和30.8GHz.     

fmax为30.8GHz的超薄Al2O3绝缘栅GaN MOS-HEMT器件

报道了一种利用原子层淀积(ALD)生长超薄(3.5nm)Al2O3为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT).新型AlGaN/GaN MOS-HEMT器件栅长1μm,栅宽120μm,栅压为 3.0V时最大饱和输出电流达到720mA/mm,最大跨导达到130mS/mm,开启电压保持在-5.0V,特征频率和最高振荡频率分别为10.1和30.8GHz.     

氧化铝钝化在晶体硅太阳电池中的应用

首先,回顾了氧化铝钝化技术的发展历程,对制备氧化铝钝化薄膜的手段进行了总结,并且详细描述了氧化铝的材料性质和钝化的机理。其次,指出氧化铝薄膜的优点在于优异的场效应钝化特性和良好的化学钝化性质,因此可以应用于低掺和高掺p型硅表面的钝化。此外,氧化铝薄膜及其叠层还具有良好的热稳定性,符合丝网印刷太阳电池的要求。最后,总结了氧化铝薄膜钝化技术在晶体硅太阳电池中的最新研究动态,指出氧化铝钝化薄膜用于工业生产中存在的问题,并针对这些问题提出了有效的解决方案。     

Al2O3-SiC复相微波衰减材料的性能研究

采用热压烧结工艺制备了Al2O3-SiC复相微波衰减材料。通过网络分析仪,研究了SiC含量对材料的微波衰减性能的影响。结果表明,当w(SiC)<3%,复相材料具有选频衰减的频谱曲线,谐振峰位置基本不变;当w(SiC)为3%~16%,材料的谐振损耗峰向低频方向移动;当w(SiC)>16%时,材料呈现出宽频衰减特性。对复相材料的微波衰减机理作了初步探讨,弛豫损耗和电导损耗是其主要的衰减机理。     

Al2O3/Al复合材料界面上MgAl2O4尖晶石形成的高分辨电镜观察

界面问题一直是复合材料研究者最关心的话题之一.界面结合的好坏直接关系到载荷从基体向增强体的传递效率.Al2O3/Al复合材料中,由于Al与Al2O3本征不润湿的特征,人们提出了一系列的措施来改良界面,其中一种就是基体合金化.Mg元素是显著增强润湿的合金元素之一,但是由于Mg在界面上引起的一系列化学反应使其界面反应润湿现象变得复杂起来.     

钙铝硼硅玻璃/氧化铝复合材料性能研究

通过高温熔融法制备的CaO-Al2O3-B2O3-SiO2玻璃粉末与α-Al2O3粉末按照质量分数50:50混合,烧结制备了钙铝硼硅玻璃/氧化铝系低温共烧陶瓷材料,研究了烧结温度对复合材料的物相组成、微观结构、力学性能及介电性能的影响.结果表明,875℃烧结制备的复合材料性能最佳,抗弯强度为164 MPa,介电常数为7.8,介电损耗为0.001 3,热膨胀系数为5.7×10-6/℃,具有良好的综合性能,可用作低温共烧陶瓷基板材料.     

Ultrathin Al/sub 2/O/sub 3/ and HfO/sub 2/ gate dielectrics on surface-nitrided Ge

We have studied ultrathin Al/sub 2/O/sub 3/ and HfO/sub 2/ gate dielectrics on Ge grown by ultrahigh vacuum-reactive atomic-beam deposition and ultraviolet ozone oxidation. Al/sub 2/O/sub 3/-Ge gate stack had a t/sub eq//spl sim/23 /spl Aring/, and three orders of magnitude lower leakage current compared to SiO/sub 2/. HfO/sub 2/-Ge allowed even greater scaling, achieving t/sub eq//spl sim/11 /spl Aring/ and six orders of magnitude lower leakage current compared to SiO/sub 2/. We have carried out a detailed study of cleaning conditions for the Ge wafer, dielectric deposition condition, and anneal conditions and their effect on the electrical properties of metal-gated dielectric-Ge capacitors. We show that surface nitridation is important in reducing hysteresis, interfacial layer formation and leakage current. However, surface nitridation also introduces positive trapped charges and/or dipoles at the interface, resulting in significant flatband voltage shifts, which are mitigated by post-deposition anneals.     

Bi2O3对Al2O3-ZnO-Bi2O3-B2O3低熔玻璃结构和性能的影响

采用传统的熔淬技术制得了低熔Al2O3-ZnO-Bi2O3-B2O3玻璃,研究了玻璃结构、玻璃特征温度、线膨胀系数(α1)以及密度随Bi2O3含量的变化关系.结果表明:随着Bi2O3含量的增加,玻璃网络中[BO4]取代了部分[BO3],玻璃网络中出现Bi-O结构,玻璃中非桥氧的数量也逐渐增多;软化温度(ts)、玻璃化温度(tg)都是先上升后下降,而线膨胀系数先减小后逐渐增大,玻璃密度先是线性增加,然后增加趋势变大.     

Optical and electrical properties of Al2O3 films containing silicon nanocrystals

Optical, electrical, and structural properties of Al₂O₃ films subjected to silicon-ion implantation and annealing were investigated by means of photoluminescence measurements, current-voltage measurements and transmission electron microscopy. Transmission electron microscopy revealed that silicon nanocrystals were epitaxially formed in ϑ-Al₂O₃. Visible photolum inescence was observed, for the first time, from Al₂O₃ films containing silicon nanocrystals. Observed visible photoluminescence seems to be related to quantum size effects in silicon nanocrystals as well as localized radiative recombination centers located at the interface between silicon nanocrystals and matrix, similar to porous Si and other Si nanostructures. The conduction mechanism in the samples was studied by using dc current-voltage measurements. The conduction properties depend on temperature and applied electric fields. The conduction behavior in low electric fields consists of thermally activated region dominated by the Schottky conduction and nonthermally activated region in which carrier transport is controlled by space-charge-limited currents. The conduction behavior under relatively high electric fields is almost independent of temperature and well fitted by space-charge-limited conduction.     

K2O-B2O3-SiO2/Al2O3LTCC复合基板材料性能研究

采用K2O-B2O3-SiO2玻璃与Al2O3复合烧结,制备了K2O-B2O3-SiO2/Al2O3低温共烧陶瓷(LTCC)复合基板材料,研究了不同组分含量对体系微观结构和性能的影响。结果表明,复合基板材料的相对介电常数εr和介质损耗均随着Al2O3含量的增加而增加,当Al2O3质量分数为45%时,复合基板材料的介质损耗为0.0085,εr为4.55(1MHz)。抗弯强度可达到160MPa。     

Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses

In order to investigate charge trap characteristics with various thicknesses of blocking and tunnel oxide for application to non-volatile memory devices, we fabricated 5 and 15 nm Al₂O₃/5 nm La₂O₃/5 nm Al₂O₃ and 15 nm Al₂O₃/5 nm La₂O₃/5, 7.5, and 10 nm Al₂O₃ multi-stack films, respectively. The optimized structure was 15 nm Al₂O₃ blocking oxide/5 nm La₂O₃ trap layer/5 nm Al₂O₃ tunnel oxide film. The maximum memory window of this film of about 1.12 V was observed at 11 V for 10 ms in program mode and at ?13 V for 100 ms in erase mode. At these program/erase conditions, the threshold voltage of the 15 nm Al₂O₃/5 nm La₂O₃/5 nm Al₂O₃ film did not change for up to about 10⁴ cycles. Although the value of the memory window in this structure was not large, it is thought that a memory window of 1.12 V is acceptable in the flash memory devices due to a recently improved sense amplifier.     

Y_2O_3-MgO-Al_2O_3烧结助剂对SiC陶瓷烧结和导热性能的影响

对SiC粉体进行热处理,采用Y2O3-MgO-Al2O3烧结助剂,在1 750~1 950℃下30 MPa热压烧结1 h,制备SiC陶瓷。TG分析SiC的氧化特性,测定Zeta-电位研究SiC粉体的分散特性,测定其高温浸润性研究烧结助剂与SiC之间的亲和性。结果表明:SiC粉体热处理和提高SiC浆体的pH值,有利于提高Zeta-电位,进而提高分散均匀性;Y2O3-MgO-Al2O3烧结助剂高温下与SiC具有良好的浸润性;SiC粉体热处理明显降低了烧结温度。尽管Y2O3-MgO-Al2O3烧结助剂在高温下有一定的挥发,但是当其含量大于等于9%(质量分数)时,1 800~1 950℃下热压烧结可获得显气孔率小于等于0.19%的致密SiC陶瓷,其热导率大于190 W.m–1.K–1。     

BaTiO3表面包裹氧化铝的改性研究

采用固相法、非匀相沉淀法、喷雾干燥法三种不同方法,对掺杂Nd、Y、Mn的BaTiO3表面包裹Al2O3,研究了包裹Al2O3对BaTiO3基陶瓷的微观形貌、介电常数、介电非线性、容温变化率的影响,结果表明,喷雾干燥法包裹Al2O3的BaTiO3基陶瓷性能较优:所制陶瓷粒径为0.6 μm,绝缘电阻率达到1011Ω·cm,介电常数变化率为21.5％,容温变化率为58.3％.     

自组织多孔阳极氧化铝膜的研究进展

主要介绍了几种不同多孔氧化铝膜的制作,氧化铝膜的光致发光性质及来源,最后介绍了多孔氧化铝膜在钠米材料中的应用,并对阳极氧化铝膜发展前景进行了展望。     

一种电容式Al2O3湿度传感器

在单晶Si片上热生长一层SiO2薄膜，采用真空淀积的方法制备一层Al薄膜，然后利用铝阳极氧化的方法获得一层多孔Al2O3薄膜。设计制作了电容式Al2O3湿度传感器，测试结果表明，该器件具有较好的感湿特性和较宽的感湿范围。     

烧结镍工艺的应用研究

二次金属化工艺现多采用电镀镍工艺技术,镍层在金属化层中所起的作用：优化焊料对金属化层的润湿,保护金属化层免于焊料的侵蚀,增强焊接强度和真空气密性。本文以生产实践为基础探讨获得镍层的工艺技术之异同及实用效果之比对。     

Li2O掺杂对CBS/Al2O3玻璃陶瓷性能的影响

研究了Li2O掺杂对CBS/Al2O3玻璃陶瓷烧结性能和介电性能的影响.结果表明,掺杂适量的Li2O可改善CBS/Al2O3玻璃陶瓷的烧结性能和介电性能,当掺杂Li2O的质量分数为0.5%时,CBS/Al2O3玻璃陶瓷在810 ℃可实现低温致密化烧结,试样的体积密度为2.89 g/cm3;在1 MHz的测试频率下,该材料的介电常数为8.6,介电损耗为1.0×10-3;XRD分析表明其相组成主要为CaSiO3、CaAl3BO7、残余Al2O3和玻璃相.