Laser-induced crystallization and conformation control of poly(3-hexylthiophene) for improving the performance of organic solar cells

Femto-second laser irradiation on P3HT:PCBM solutions have been demonstrated to have a significant impact on the conformational structures and photovoltaic performance of the resultant thin films. The crystallinity and edge-on/face-on conformations of P3HT and the aggregation of PCBM can be manipulated by controlling the wavelength (400–800 nm) and illumination duration (1–3 h) of the lasers. Grazing incidence wide- and small-angle X-ray scattering (GIWAXS and GISAXS) have been simultaneously utilized to characterize the nanostructures of the P3HT:PCBM blend films spin-cast from pristine and laser-irradiated solutions. The results show that the crystallinity, π-π* stacking and face-on conformations of P3HT can be enhanced as a result of the laser irradiation at 500 nm for 3 h. Furthermore, the diffusion and aggregation of PCBM molecules are suppressed by the photo-induced dimerization, as evidenced by the Raman spectra of the films cast from laser-irradiated PCBM solutions. The time-resolved fluorescence decay profiles show the charge transfer efficiency is improved, which may correlate to the supramolecular ordering of the polythiophene chains and the optimized phase separation in P3HT:PCBM composite. In the P3HT:PCBM active layer of the organic solar cells, more efficient charge transport and fine interpenetrating networks can be achieved due to the improved conformational microstructures. Consequently, the short-circuit current densities and power conversion efficiencies can be enhanced in organic solar cells based on the laser-irradiation processed P3HT:PCBM solutions.     

Performance of ITO-free inverted organic bulk heterojunction photodetectors: Comparison with standard device architecture

We report on the fabrication of Indium Tin Oxide (ITO)-free inverted organic bulk heterojunction (BHJ) photodetectors of poly(3-hexylthiophene) (P3HT): 1-(3-methoxycarbonyl)-propyl-1-1-phenyl-(6,6) C61 (PCBM). The final inverted device structure is Cr/Al/Cr/P3HT:PCBM/poly-3,4-ethylenedioxythiophene:poly-styrenesulfonate (PEDOT:PSS)/Ag (Zimmermann et al., 2009) [1]. The device is top-absorbing with the light entering through the hole contact grid. We have fabricated standard devices with structure ITO/PEDOT:PSS/P3HT:PCBM/LiF/Al in order to carry out a comparison study. Inverted photodetectors show slightly higher quantum efficiency and responsivity compared to standard devices. Frequency responses at different bias voltages were measured showing a maximum −3 dB cut-off frequency of 780 kHz and 700 kHz at −3 V for the standard and inverted structures respectively. Parameters extracted from the fit of a circuital model to the impedance spectroscopy measurements were used to estimate the photodiode cut-off frequency as function of bias.     

Detecting 6 MV X-rays using an organic photovoltaic device

An organic photovoltaic (OPV) device has been used in conjunction with a flexible inorganic phosphor to produce a radiation tolerant, efficient and linear detector for 6 MV X-rays. The OPVs were based on a blend of poly(3-hexylthiophene-2,5-diyl) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM). We show that the devices have a sensitivity an order of magnitude higher than a commercial silicon detector used as a reference. Exposure to 360 Grays of radiation resulted in a small (2%) degradation in performance demonstrating that these detectors have the potential to be used as flexible, real-time, in vivo dosimeters for oncology treatments.     

Probing the bulk heterojunction morphology in thermally annealed active layers for polymer solar cells

A combination of fast scanning chip calorimetry and X-ray ptychography is explored to study the effects of thermal annealing on the active layer of bulk heterojunction organic photovoltaics. The well-known P3HT/PC₆₁BM 1:1 system is investigated as a test case. By using a custom chip calorimetry setup, it is possible to give a thermal treatment at 127 °C (400 K) to P3HT/PC₆₁BM 1:1 thin layers, using a heating and cooling rate of 30000 K s⁻¹, after which the resulting morphology is investigated with X-ray ptychography. Applying only heating and cooling, without isothermal annealing, yields a featureless morphology. This corresponds well with thermal data which indicate a mixed amorphous phase only. For increasing isothermal annealing times, a well-defined morphology appears with increasing domain size, corresponding to the formation of an endothermal melting trajectory. This melting trajectory is expected to consist of both eutectic melting and melting of coarsened crystals. In contrast to chip calorimetry results, large domain sizes are obtained for heating and cooling without isothermal annealing at a conventional rate of 20 K min⁻¹. This initial morphology then develops further with increased isothermal annealing. The combination of chip calorimetry and ptychography allows separating the effects of each single thermal step on morphology development.     

Probing film solidification dynamics in polymer photovoltaics

Semiconducting conjugated polymers have drawn a great deal of attention over the past decade due to their solution processability and potential use in roll to roll fabrication of organic solar cells. Here, we report the effect of solvent vapor pressure on poly(3-hexylthiophene):[6,6]-phenyl C₆₁-butyric acid methyl ester (P3HT:PCBM) blade coated inverted solar cells using ZnO as the electron transporting layer and MoO₃ as the hole transporting layer. The resultant morphology and device performance are investigated for devices processed from solvents with varied vapor pressure and a mixed solvent. We report that the use of a mixed solvent system is advantageous for controlling the initial vapor pressure of the processing solution, thereby controlling the phase separated morphology between P3HT and PCBM which impacts ultimate solar cell performance.     

Charge injection process in polymer: Fullerene composite diodes studied by spectroscopic techniques combined with bias application

Charge injection processes in polymer: fullerene composite diodes have been investigated for blend films of poly(3-hexylthiophene) (P3HT) and methanofullerene (PCBM) using spectroscopic techniques combined with bias application, termed a device modulation (DM) spectroscopic technique. The voltage dependence of DM signals under the dark condition demonstrates that injection of mobile carriers into P3HT in the blend diode occurs at much lower voltage than that for a P3HT diode, suggesting that the bulk-hetero junction structure of the blend film induces inhomogeneity in the energy level and partly lowers the barrier for carrier injection. Recombination processes of injected P3HT carriers for the blend device in the dark are analyzed by the frequency dependence of DM signals and found to be dominated by bimolecular recombination processes. The DM measurements under illumination demonstrate that, although charge injection under illumination occurs to the same extent as that in the dark condition, some photo-generated charge-transfer states at the interface of P3HT and PCBM are lost on a slow timescale by recombination with injected carriers.     

A thermodynamic and kinetic description of PCBM phase segregation and aggregation in P3HT:PCBM blends

The kinetics and thermodynamics of PCBM phase segregation and aggregation in P3HT:PCBM blends has been studied. We develop a thermodynamic model for PCBM phase segregation in P3HT:PCBM blends which explains the formation of nanoscale crystallites which subsequently diffuse and coalesce into larger PCBM aggregates. We show that the formation of nanoscale crystallites during the film making process prevents spinodal decomposition of the P3HT:PCBM blends even at PCBM weight fractions above the spinodal decomposition boundary for the system. Finally, we demonstrate that the observed aggregate morphology can be understood in terms of a kinetic model based on the diffusional flux lines of PCBM crystallite which, in turn, govern the evolution of the macroscopic growth front.     

Effects of exciton blocking layer and cathode electrode work function on the performance of polymer solar cells

In this study the effects of some important processing and post-processing treatments on the performance of poly(3-hexylthiophene-2,5-diyl) (P3HT):[6,6]-phenyl-C₆₁-butyric acid methyl ester ([60]PCBM) solar cells were investigated. These parameters included the active layer film formation period, thermal annealing, electrical treatment, cathode work function modification, and exciton blocking layer type and thickness. Polymer bulk heterojunction solar cells having a glass/indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/P3HT:PCBM/(Ca or LiF)/Al structure were fabricated. The morphology of the active layer was investigated using atomic force microscopy. The results showed that the morphology state of the active layer exactly after spin coating process was very important parameter, which could dictate different responses of solar cells to a certain treatment. Using solvent additives to prolong the film formation period and storing in small dish could reach the morphology of the active layer near its best state in which there was no need to apply common post-treatment processes. A thickness at about 20 nm was required for Ca layer to effectively act as exciton blocking layer while LiF with 1 nm thickness worked better.     

Electrical and interfacial properties of Au/P3HT:PCBM/n-Si Schottky barrier diodes at room temperature

In this study, a gold/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester/n-type silicon (Au/P3HT:PCBM/n-Si) metal-polymer-semiconductor (MPS) Schottky barrier diode (SBD) was fabricated. To accomplish this, a spin-coating system and a thermal evaporation were used for preparation of a P3HT/PCBM layer system and for deposition of metal contacts, respectively. The forward- and reverse-bias current–voltage (I–V) characteristics of the MPS SBD at room temperature were studied to investigate its main electrical parameters such as ideality factor (n), barrier height (Φ_B), series resistance (R_s), shunt resistance (R_sh), and density of interface states (N_ss). The I–V characteristics have nonlinear behavior due to the effect of R_s, resulting in an n value (3.09) larger than unity. Additionally, it was found that n, Φ_B, R_s, R_sh, and N_ss have strong correlation with the applied bias. All results suggest that the P3HT/PCBM interfacial organic layer affects the Au/P3HT:PCBM/n-Si MPS SBD, and that R_s and N_ss are the main electrical parameters that affect the Au/P3HT:PCBM/n-Si MPS SBD. Furthermore, a lower N_ss compared with that of other types of MPS SBDs in the literature was achieved by using the P3HT/PCBM layer. This lowering shows that high-quality electronic and optoelectronic devices may be fabricated by using the Au/P3HT:PCBM/n-Si MPS SBD.     

High efficient ITO free inverted organic solar cells based on ultrathin Ca modified AZO cathode and their light soaking issue

Aluminum doped zinc oxide (AZO) was used to be the cathode instead of indium-tin-oxide (ITO) in the poly (3-hexylthiophene-2,5-diyl):[6,6]-phenyl C₆₁ butyric acid methyl ester (P3HT:PCBM) based bulk heterojunction inverted organic solar cells (IOSCs). For the AZO only IOSC, the device shows a poor power conversion efficiency (PCE) of 1.34% and a light soaking issue related to the energy barrier at the AZO/P3HT:PCBM interface. When a 5 nm Ca modifying layer is inserted between AZO and P3HT:PCBM, the obtained AZO/Ca (5 nm) IOSC shows an increased PCE from 1.74% to 2.69% after 15 min illumination. It is thought that the increased photoconductivity of AZO/Ca (5 nm) film upon illumination and the enhanced electron transport across the AZO/Ca interface may be responsible for the light soaking issue. When an ultrathin Ca modifying layer of 1 nm is employed, a further improved PCE of 3.17% is obtained, and remarkably, no light soaking issue is observed in this case. However, this unexpected issue appears after the un-encapsulated AZO/Ca (1 nm) IOSC has been stored in air for several days, which may be due to the energy loss in the electron transport across the interface between partly oxidized Ca and AZO layers induced by the oxidization of Ca. Furthermore, the AZO/Ca (1 nm) IOSC has a comparable PCE to the referenced ITO/Ca (1 nm) IOSC and presents a better air-stability. It is thus concluded that the AZO cathode is a promising alternative of ITO to fabricate the high efficient and long-lifetime IOSCs.