Oxidation Behavior of Liquid-Phase Sintered Silicon Carbide with Aluminum Nitride and Rare-Earth Oxides (Re2O3, where Re = Y, Er, Yb)

Silicon carbide (SiC) ceramics have been fabricated by hot-pressing and subsequent annealing under pressure with aluminum nitride (AlN) and rare-earth oxides (Y₂O₃, Er₂O₃, and Yb₂O₃) as sintering additives. The oxidation behavior of the SiC ceramics in air was characterized and compared with that of the SiC ceramics with yttrium–aluminum–garnet (YAG) and Al₂O₃–Y₂O₃–CaO (AYC). All SiC ceramics investigated herein showed a parabolic weight gain with oxidation time at 1400°C. The SiC ceramics sintered with AlN and rare-earth oxides showed superior oxidation resistance to those with YAG and Al₂O₃–Y₂O₃–CaO. SiC ceramics with AlN and Yb₂O₃ showed the best oxidation resistance of 0.4748 mg/cm² after oxidation at 1400°C for 192 h. The minimization of aluminum in the sintering additives was postulated as the prime factor contributing to the superior oxidation resistance of the resulting ceramics. A small cationic radius of rare-earth oxides, dissolution of nitrogen to the intergranular glassy film, and formation of disilicate crystalline phase as an oxidation product could also contribute to the superior oxidation resistance.     

Preparation and Analysis of a Silicon Carbide Composite Membrane

Silicon carbide (SiC) porous substrates, containing alumina (Al₂O₃) dopant levels of 3, 5, and 8 wt%, are prepared by slip casting and sintering in the temperature range of 1450°–1800°C. The linear shrinkage, bulk density, and pore size of the sintered substrate increase as the sintering temperature and the amount of dopant increase. A large amount of β-phase SiC is transformed to α-phase SiC if the dopant concentration is 5 or 8 wt%. The flexural strength of the substrate doped with 8 wt% Al₂O₃ is higher than that of the substrate doped with 3 wt% Al₂O₃; however, the Weibull modulus of the former is lower. SiC composite membranes of improved selectivity and strength are fabricated by coating the porous substrate with layers of lower Al₂O₃ contents at lower sintering temperatures.     

Improvement of Mechanical Properties and Corrosion Resistance of Porous β-SiAlON Ceramics by Low Y2O3 Additions

Addition of Y₂O₃ as a sintering additive to porous β-SiAlON (Si_{6− z} Al _z O _z N_{8− z} , z = 0.5) ceramics has been investigated for improved mechanical properties. Porous SiAlON ceramics with 0.05–0.15 wt% (500–1500 wppm) Y₂O₃ were fabricated by pressureless sintering at temperatures of 1700°, 1800°, and 1850°C. The densification, microstructure, and mechanical properties were compared with those of Y₂O₃-free ceramics of the same chemical composition. Although this level of Y₂O₃ addition did not change the phase formation and grain size, the grain bonding appeared to be promoted, and the densification to be enhanced. There was a significant increase in the flexural strength of the SiAlON ceramics relative to the Y₂O₃-free counterpart. After exposure in 1 M hydrochloric acid solution at 70°C for 120 h, no remarkable weight loss and degradation of the mechanical properties (flexural and compression strength) was observed, which was attributed to the limited grain boundary phase, and with the minor Y₂O₃ addition the supposed formation of Y-α-SiAlON.     

Effect of Liquid Phase Sintering on Microstructure and Mechanical Properties of Yb2O3-AlN Containing SiC-Based Ceramics

A series of silicon carbide-based ceramics with different sintering additives were liquid-phase sintered to high densities. Yb₂O₃ in combination with AlN was used as the additive, instead of the commonly used Y₂O₃–AlN, to improve the refractoriness of the secondary phase. Thermo-chemical decomposition of AlN was sufficiently suppressed with the use of nitrogen overpressure and reasonable weight loss was achieved in the different additive containing SiC ceramics without a reactive powder bed. Use of the heavier rare-earth element modified the liquid phase formed during sintering and reduced the phase transformation controlled grain growth rate, compared with Y₂O₃ doped materials. It also permitted microstructure tailoring through post-sintering heat treatments in nitrogen. Materials with self-reinforced microstructures, formed as a result of anisotropic grain growth, were obtained. Improved fracture toughness (4.5–5 MPa/m^1/2) and good flexural strength retention up to 1400°C were also observed.     

Effects of Additives on Microstructure and Properties of Alumina-Silicon Carbide Nanocomposites

Al₂O₃/5-vol%-SiC nanocomposites have been fabricated by using pressureless sintering with MgO and/or Y₂O₃ sintering aids and post-hot isostatic pressing (HIPing), which circumvents the limitations of hot pressing. Al₂O₃/SiC nanocomposites that have been doped with 0.1 wt% MgO and 0.1 wt% MgO + 0.1 wt% Y₂O₃ show an increased sintering density and a homogeneous microstructure, as well as a high fracture strength (1 GPa) after HIPing. In contrast, using Y₂O₃ as a dopant has a negative impact on the microstructure and the fracture strength. The results suggest that MgO, as a sintering additive, has a key role in improving the densification and controlling the microstructure of Al₂O₃/SiC nanocomposites.     

Microwave Dielectric Properties of Li2TiO3 Ceramics Doped with ZnO–B2O3 Frit

A type of new low sintering temperature ceramic, Li₂TiO₃ ceramic, has been found. Although it is difficult for the Li₂TiO₃ compound to be sintered compactly at temperatures above 1000°C for the volatilization of Li₂O, dense Li₂TiO₃ ceramics were obtained by conventional solid-state reaction method at the sintering temperature of 900°C with the addition of ZnO–B₂O₃ frit. The sintering behavior and microwave dielectric properties of Li₂TiO₃ ceramics with less ZnO–B₂O₃ frit (≤3.0 wt%) doping were investigated. The addition of ZnO–B₂O₃ frit can lower the sintering temperature of the Li₂TiO₃ ceramics, but it does not apparently degrade the microwave dielectric properties of the Li₂TiO₃ ceramics. Typically, the good microwave dielectric properties of ɛ_r=23.06, Q × f =32 275 GHz, τ_f = 35.79 ppm/°C were obtained for 2.5 wt% ZnO–B₂O₃ frit-doped Li₂TiO₃ ceramics sintered at 900°C for 2 h. The porosity was 0.08%. The Li₂TiO₃ ceramic system may be a promising candidate for low-temperature cofired ceramics applications.     

Sintering Silicon Nitride Ceramics in Air

Silicon nitride (Si₃N₄) ceramics, prepared with Y₂O₃ and Al₂O₃ sintering additives, have been densified in air at temperatures of up to 1750°C using a conventional MoSi₂ element furnace. At the highest sintering temperatures, densities in excess of 98% of theoretical have been achieved for materials prepared with a combined sintering addition of 12 wt% Y₂O₃ and 3 wt% Al₂O₃. Densification is accompanied by a small weight gain (typically <1–2 wt%), because of limited passive oxidation of the sample. Complete α- to β-Si₃N₄ transformation can be achieved at temperatures above 1650°C, although a low volume fraction of Si₂N₂O is also observed to form below 1750°C. Partial crystallization of the residual grain-boundary glassy phase was also apparent, with β-Y₂Si₂O₇ being noted in the majority of samples. The microstructures of the sintered materials exhibited typical β-Si₃N₄ elongated grain morphologies, indicating potential for low-cost processing of in situ toughened Si₃N₄-based ceramics.     

Microstructure, Piezoelectric, and Ferroelectric Properties of Bi2O3-Added (K0.5Na0.5)NbO3 Lead-Free Ceramics

Lead-free piezoelectric (K_0.5Na_0.5)NbO₃– x wt% Bi₂O₃ ceramics have been synthesized by an ordinary sintering technique. The addition of Bi₂O₃ increases the melting point of the system and improves the sintering temperature of (K_0.5Na_0.5)NbO₃ ceramics. All samples show a pure perovskite phase with a typical orthorhombic symmetry when the Bi₂O₃ content <0.7 wt%. The phase transition temperature of orthorhombic–tetragonal ( T _{O − T} ) and tetragonal–cubic ( T _C) slightly decreased when a small amount of Bi₂O₃ was added. The remnant polarization P _r increased and the coercive field E _c decreased with increasing addition of Bi₂O₃. The piezoelectric properties of (K_0.5Na_0.5)NbO₃ ceramics increased when a small amount of Bi₂O₃ was added. The optimum piezoelectric properties are d ₃₃=140 pC/N, k _p=0.46, Q _m=167, and T _C=410°C for (K_0.5Na_0.5)NbO₃–0.5 wt% Bi₂O₃ ceramics.     

High-Temperature Strength of Liquid-Phase-Sintered SiC with AlN and Re2O3 (RE = Y, Yb)

Using AlN and RE₂O₃ (RE = Y, Yb) as sintering additives, two different SiC ceramics with high strength at 1500°C were fabricated by hot-pressing and subsequent annealing under pressure. The ceramics had a self-reinforced microstructure consisting of elongated α-SiC grains and a grain-boundary glassy phase. High-temperature strength up to 1600°C was measured and compared with that of the SiC ceramics fabricated with AlN and Er₂O₃. SiC ceramics with AlN and Y₂O₃ showed the best strength (∼630 MPa) at 1500°C, while SiC ceramics with AlN and Er₂O₃ the best strength (∼550 MPa) at 1600°C.     

Thermal and Electrical Properties in Plasma-Activation-Sintered Silicon Carbide with Rare-Earth-Oxide Additives

This study investigates the thermal and electrical properties of SiC ceramics with a combination of Y₂O₃ and rare-earth-oxide additions as sintering additives, by comparing four types of SiC starting powders varying in particle size and chemical composition. The powder mixtures were plasma-activation sintered to full densities and then annealed at high temperatures for grain growth. The thermal conductivity and electrical resistivity of the SiC ceramics were measured at room temperature by a laser-flash technique and a current–voltage method, respectively. The results indicate that the thermal conductivity and electrical resistivity of the SiC ceramics are dependent on the chemical composition and particle size of the starting powders. The thermal conductivities observed for all of the annealed materials with a rare-earth La₂O₃ sintering additive were >160 W·(m·K)⁻¹, although low electrical resistivity was observed for all materials, in the range 3.4–450 Ω·cm. High thermal conductivity, up to 242 W·(m·K)⁻¹, was achieved in an annealed material using a commercial 270 nm SiC starting powder.     

Fabrication of Dense Nanostructured Silicon Carbide Ceramics through Two-Step Sintering

SiC powder compacts were prepared with Al₂O₃, Y₂O₃, and CaO powders. By two-step sintering, fully dense nanostructured SiC ceramics with a grain sizes of ∼40 nm were obtained. The grain size–density trajectories are compared with those of conventional sintering processes.     

Effects of B2O3 Addition on the Dielectric and Ferroelectric Properties of Ba0.7Sr0.3TiO3 Ceramics

The effects of B₂O₃ addition on the sintering behavior and the dielectric and ferroelectric properties of Ba_0.7Sr_0.3TiO₃ (BST) ceramics were investigated. The dielectric and ferroelectric properties of a BST sample with 0.5 wt% B₂O₃ sintered at <1150°C were as good as those of undoped BST sintered at 1350°C, and the dielectric loss was better. When >1.0 wt% B₂O₃ was added to BST, the overdoped B₂O₃ did not form a liquid phase or volatilize; it remained in the samples and formed a secondary phase that lowered the sintering behavior and the dielectric and ferroelectric properties of the BST.     

Microwave Dielectric Properties and Chemical Resistance of Low-Temperature-Sintered CaZrB2O6 Ceramics

Dolomite-type borate ceramics consisting of CaZrB₂O₆ were synthesized via a conventional solid-state reaction route; low-temperature sintering was explored using Bi₂O₃–CuO additives of 1–7 wt% for low-temperature co-fired ceramics applications. For several sintering temperatures, the microwave dielectric properties and chemical resistance of the ceramics were investigated. The CaZrB₂O₆ ceramics with 3 wt% Bi₂O₃–CuO addition could be sintered below 925°C, and the microwave dielectric properties of the low-temperature samples were ɛ_r=10.55, Q × f =87,350 GHz, and τ_f=+2 ppm/°C. The chemical resistance test result showed that both CaZrB₂O₆- and Bi₂O₃–CuO-added CaZrB₂O₆ ceramics were durable in basic solution but were degraded in acid solution.     

Influence of V2O5 Additions to 5Li2O–1Nb2O5–5TiO2 Ceramics on Sintering Temperature and Microwave Dielectric Properties

The effects of the addition of V₂O₅ on the sintering behavior, microstructure, and microwave dielectric properties of 5Li₂O–1Nb₂O₅–5TiO₂ (LNT) ceramics have been investigated. With low-level doping of V₂O₅ (≤3 wt%), the microstructure of the LNT ceramic changed from a special two-level intergrowth structure into a two-phase composite structure with separate grains. And the sintering temperature of the LNT ceramics could be lowered to around 900°C by adding a small amount of V₂O₅ without much degradation in microwave dielectric properties. Typically, better microwave dielectric properties of ɛ_r=41.7, Q × f =7820 GHz, and τ _f =45 ppm/°C could be obtained for the 1 wt% V₂O₅-doped ceramics sintered at 900°C.     

Microwave Dielectric Properties of 5Li2O–0.583Nb2O5–3.248TiO2 Ceramics with V2O5

The effects of V₂O₅ addition on the sintering behavior, microstructure, and the microwave dielectric properties of 5Li₂O–0.583Nb₂O₅–3.248TiO₂ (LNT) ceramics have been investigated. With addition of low-level doping of V₂O₅ (≤2 wt%), the sintering temperature of the LNT ceramics could be lowered down to around 920°C due to the liquid phase effect. A secondary phase was observed at the level of 2 wt% V₂O₅ addition. The addition of V₂O₅ does not induce much degradation in the microwave dielectric properties but lowers the τ_f value to near zero. Typically, the excellent microwave dielectric properties of ɛ_r=21.5, Q × f =32 938 GHz, and τ_f=6.1 ppm/°C could be obtained for the 1 wt% V₂O₅-doped sample sintered at 920°C, which is promising for application of the multilayer microwave devices using Ag as an internal electrode.     

Low Temperature Sintering of Zn3Nb2O8 Ceramics from Fine Powders

A possibility to produce microwave (MW) dielectric materials by liquid-phase sintering of fine particles was investigated. Zn₃Nb₂O₈ powders with a grain size 50–300 nm were obtained by the thermal decomposition of freeze-dried Zn–Nb hydroxides or frozen oxalate solutions. The crystallization of Zn₃Nb₂O₈ from amorphous decomposition products was often accompanied by the simultaneous formation of ZnNb₂O₆. Maximum sintering activity was observed for single-phase crystalline Zn₃Nb₂O₈ powders obtained at the lowest temperature. The sintering of as-obtained powders with CuO–V₂O₅ sintering aids results in producing MW dielectric ceramics with a density 93%–97% of the theoretical, and a Q × f product up to 36 000 GHz at sintering temperature ( T _s)≥680°C. The high level of MW dielectric properties of ceramics was ensured by intensive grain growth during the densification and the thermal processing of ceramics.     

Influence of Copper(II) Oxide Additions to Zinc Niobate Microwave Ceramics on Sintering Temperature and Dielectric Properties

The effect of CuO additions on the firing temperature of ZnNb₂O₆ ceramics was investigated using dilatometry, transmission electron microscopy, and X-ray diffractometry. A 5 wt% CuO addition to ZnNb₂O₆ ceramics significantly lowered the firing temperature from 1150° to ∼900°C. The presence of a CuO-rich intergranular phase in the specimen was observed and was evidence of the formation of a liquid phase during sintering. The composition of the liquid phase was (ZnCu₂)Nb₂O₈. In particular, the low-fired ZnNb₂O₆ ceramics had good microwave dielectric characteristics— Q × f = 59 500, ɛ_r= 22.1, τ_f=–66 ppm/^oC. These properties were correlated with the formation of a second phase, (ZnCu₂)Nb₂O₈.     

Effects of α-Sic versus β-Sic Starting Powders on Microstructure and Fracture Toughness of Sic Sintered with Al2O3-Y2O3 Additives

Dense Sic ceramics were obtained by pressureless sintering of β-Sic and α-Sic powders as starting materials using Al₂O₃-Y₂O₃ additives. The resulting microstructure depended highly on the polytypes of the starting SiC powders. The microstructure of SiC obtained from α-SiC powder was composed of equiaxed grains, whereas SiC obtained from α-SiC powder was composed of a platelike grain structure resulting from the grain growth associated with the β→α phase transformation of SiC during sintering. The fracture toughness for the sintered SiC using α-SiC powder increased slightly from 4.4 to 5.7 MPa.m^1/2 with holding time, that is, increased grain size. In the case of the sintered SiC using β-SiC powder, fracture toughness increased significantly from 4.5 to 8.3 MPa.m^1/2 with holding time. This improved fracture toughness was attributed to crack bridging and crack deflection by the platelike grains.     

Sintering and Microwave Dielectric Properties of the LiNb0.63Ti0.4625O3 Ceramics with the B2O3–SiO2 Liquid-Phase Additives

The effect of B₂O₃–SiO₂ liquid-phase additives on the sintering, microstructure, and microwave dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics was investigated. It was found that the sintering temperature could be lowered easily, and the densification and dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics could be greatly improved by adding a small amount of B₂O₃–SiO₂ solution additives. No secondary phase was observed for the ceramics with B₂O₃–SiO₂ additives. With the addition of 0.10 wt% B₂O₃–SiO₂, the ceramics sintered at 900°C showed favorable microwave dielectric properties with ɛ_r=71.7, Q × f =4950 GHz, and τ_f=−2.1 ppm/°C. The energy dispersive spectra analysis showed an excellent co-firing interfacial behavior between the LiNb_0.63Ti_0.4625O₃ ceramic and the Ag electrode. It indicated that LiNb_0.63Ti_0.4625O₃ ceramics with B₂O₃–SiO₂ solution additives have a number of potential applications on passive integrated devices based on the low-temperature co-fired ceramics technology.     

Grain Growth of ZnO during Bi2O3 Liquid-Phase Sintering

Grain growth of ZnO during the liquid-phase sintering of binary ZnO–Bi₂O₃ ceramics has been studied for Bi₂O₃ contents from 3 to 12 wt% and sintering from 900° to 1400°C. The results are considered in combination with previously published studies of ZnO grain growth in the ZnO–Bi₂O₃ system. For the Bi₂O₃ contents of the present study, the rate of ZnO grain growth is found to decrease with increasing Bi₂O₃. Activation analysis, when combined with the results of similar analyses of the previous studies, reveals a change in the rate-controlling mechanism for ZnO grain growth. Following a low-Bi₂O₃-content region of nearly constant activation energy values of about 150 kJ/mol, further Bi₂O₃ additions cause an increase of the activation energy to about 270 kJ/mol. consistent with accepted models of liquid-phase sintering, it is concluded that the rate-controlling mechanism of ZnO grain growth during liquid-phase sintering in the presence of Bi₂O₃ changes from one of a phase-boundary reaction at low Bi₂O₃ levels to one of diffusion through the liquid phase at about the 5 to 6 wt% Bi₂O₃ level and above.