办公室办公自动化技术的应用研究

办公自动化技术的不断发展，为办公室工作提供了许多便利，在自动化环境下，大大提高了对办公自动化技术的整合和利用。其呈现出的高效率办公室系统也在发挥着重要作用，逐渐成为政府部门及企业日常工作的重要工具。利用办公室自动化技术，能让办公自动化环境得到改善和变革，在最大程度上实现资源共享，使办公室工作得以有效进行。文中着重探索了办公自动化技术在办公室日常工作中的具体应用。     

医院办公自动化系统应用研究

随着我国社会经济以及科学技术的不断发展,网络技术的普及,办公自动化建设正在快速的发展,为了加快医院改革的步伐,建设一个先进的网络技术平台,不断优化医生工作的流程,提高医院的工作效率以及管理水平的办公体系,可以达到医治更多患者的目的。因此,实现医院办公自动化是我国目前信息化建设与发展的主要趋势。     

OA办公自动化在医院中的运用

文章首先介绍了OA办公自动化系统,其次表述了医院工作中运用OA办公自动化的意义,之后阐述OA办公自动化在医院工作的具体表现,最后找出医院工作运用OA办公自动化系统存在的问题并提出解决对策,希望OA办公自动化系统能够最大化地发挥自身作用,保障医院工作的顺利开展,进而推动医院健康长久发展,更好地服务大众。     

高效办公自动化研究与探讨

实现办公自动化是医院自身建设以及改革的必然要求,是实现医院服务质量的趋势。医院在建立办公自动化系统的过程中要实现办公系统高效率、高质量的办公系统,就要做好办公自动化的基础工作,建立完善的办公系统。在推进医院高校办公自动化系统的过程中还要加强领导以及进行科学的规范等,为医疗事业提供更多的便利。     

浅谈网络技术对办公自动化的影响

随着时代的发展和社会经济的进步,特别是网络技术的不断革新,很大程度上影响到了办公自动化。通过实践研究证明,采用办公自动化技术可以大大地提高工作效率,值得应用和推广。文章简要分析了网络技术对办公自动化的影响,希望可以提供一些有价值的参考意见。     

浅析计算机技术在办公自动化中的应用

随着社会不断的发展进步,行政工作的任务量在很大程度上增加了许多,并且相关的办公机构需要处理的信息数据也不断的增加,传统的信息处理方式已不能够很好的满足当今社会的需求.随着社会的发展,企业也在很大程度上对办公机构提出了更多更高的要求,而办公自动化也逐渐的取代原有的传统办公模式,并且逐渐的成为我国今后社会发展趋势,而计算机技术在实现办公自动化当中占据着重要的地位,本文立足于计算机技术在办公自动化当中的具体应用,展开了一系列的调查与分析.     

计算机软件用于医院办公自动化信息处理的探讨

随着计算机技术的快速发展,已经运用到了各行各业,其中就包括医院的自动化管理方面。计算机软件的出现给医院办公管理提供了许多的便利条件,大大提高了办公效率。而且从目前的发展形势来看,办公自动化信息处理已经成为了一个大趋势。在本文中笔者将对医院办公自动化信息处理中应用的计算机软件展开分析,进而可以为医院的办公自动化信息处理带来一些好处。     

浅谈OA系统在医院的应用

随着社会对医疗服务要求的不断提高,对医院的管理水平和办公方式提出新的标准,计算机技术在日常工作中起到举足轻重的作用,传统的手工处理日常公文事务已经不能满足医院的工作需要,以医院日常业务工作为主线,以计算机新技术为载体的办公自动化(OA)系统已经成为医院高效办公的重要选择.因此,本文以我院为实例,介绍OA系统在医院的推广使用和取得的实际效果.     

医院信息系统建设的科学规划

医院信息系统的建设逐渐成为医院现代化建设必不可少的一个组成部分，要做好这一工作，必须结合实际，分步实施。主要有网络平台建设，切合实际的医院信息系统，医院办公自动化系统，LED动态电子信息大屏系统，检验数据网上共享的生化检验网，医学影像诊断环境-PACS，Internet/Intranet/Extranet的实现，远程医疗，教学系统等。     

浅谈OA办公自动化系统在医院信息化管理中的应用

办公自动化(Office Automation,简称OA)是将现代化办公和计算机网络功能结合起来的一种新型的办公方式。通过实现办公自动化,可以优化医院现有的管理组织结构,调整管理体制,使医院员工通过网络实现互联,进行协同工作,可以显著提高工作效率,降低办公成本,实现医院无纸化办公,更能增加协同办公能力,强化决策的一致性,最后实现提高决策效能的目的。使用该平台有利于促进医院管理标准化、制度化、信息化和决策科学化,使医院工作逐步向数字化、网络化、无纸化、自动化发展。现就我院使用办公自动化系统的经验,对其在医院信息化管理中发挥的作用进行简要探讨。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.