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1.
本工作将赝弱相位物体近似像衬理论延伸至球差校正高分辨电子显微像,分析了球差校正像的衬度随样品厚度的变化规律。指出非Schemer聚焦条件下球差校正电镜拍摄的高分辨像仍未必反映晶体结构,讨论了解卷处理方法应用于球差校正像的有效性,并以有12型层错的GaN晶体为例,借助像模拟肯定了解卷处理能用于复原原子分辨率晶体缺陷的结构像。  相似文献   

2.
场发射高分辨电子显微像的图像处理何万中陈弘李方华(中国科学院物理研究所,北京100080)与非场发射电子显微镜(以下简称电镜)相比,场发射(FE)电镜的衬度传递函数(CTF)随空间频率增大而衰减的速度要缓慢得多。因此,FE电镜下拍摄的高分辨像,一方面...  相似文献   

3.
拍摄高分辨电子显微像时未必总靠近Scherzer聚焦条件,且晶体有一定厚度,致使像未必反映晶体结构。对高分辨像进行解卷处理是校正像中畸变的晶体结构信息并提高图像分辨率的有效方法。本文用高分辨像图像解卷处理方法研究GaN材料中缺陷核心的原子配置。  相似文献   

4.
场发射高分辨电子显微像的复原   总被引:2,自引:2,他引:0  
本文讨论了弱相位物体近似的实际应用范围,在此基础上对场发射高分辨电子显微像作了解卷处理。  相似文献   

5.
蛋白质晶体高分辨电子显微像的直接法解卷*阳世新李方华(中国科学院物理研究所和中国科学院凝聚态物理中心,北京100080)*本工作得到国家自然科学基金委员会的资助基于弱相位体近似的高分辨电子显微像解卷处理已成功应用于测定无机材料的晶体结构[1]。曾分别...  相似文献   

6.
高分辨电子显微像因离焦量和晶体厚度等因素的影响,未必能正确反映晶体结构。为此,李方华等建立并发展了高分辨像的解卷处理技术,将单张高分辨像恢复为结构像,并提高像的分辨率。DEC是为高分辨像解卷处理编写的配套计算机程序,将此程序应用于Si0.75Ge0.24晶体中缺陷的实验高分辨像,  相似文献   

7.
通过像处理技术分析高分辨电子显微像有助于确定样品结构,提高显微镜的分辨率。本文开发的REW软件同时具有HRTEM像模拟与波函数重构的功能。用户可通过像模拟法来确定已知晶体的结构,另一方面,用户可利用系列离焦的HRTEM像重构样品的出射波函数,从而得到重要的相位信息并提高样品的分辨率。本文将简单介绍REW软件所运用的理论知识,并列举典型例子来描述REW软件的重要功能。  相似文献   

8.
用200 kV六硼化镧灯丝的高分辨电子显微镜拍摄了外延生长在硅衬底的3C-SiC薄膜的[110]显微像.经过解卷处理和衍射振幅校正,把实验像转换为直接反映晶体投影结构的结构像,近邻Si、C原子柱显现为黑(灰)的像点对,即所谓的哑铃.测量了结构像中不同厚度区域哑铃的灰度变化,分析了哑铃中二个端点的相对灰度值随厚度的变化关系,结合赝弱相位物体近似像衬理论进行分析,辨认出Si与C原子柱.  相似文献   

9.
S-Al2CuMg相是Al-Cu-Mg合金中重要的强化相,但它的晶体学结构还存在争议。利用高分辨电子显微学和像的解卷处理技术,获得了Al-Cu-Mg合金中S-Al2CuMg相在[100],[010]和[001]的原子投影图,进而验证PW模型是S相正确的结构模型。另外,将动力学校正引入到S相孪晶图像的处理过程,确定了S相孪晶面的位置。像解卷处理方法首次应用于金属材料并确定了S相缺陷结构,说明该方法适用于金属材料。通过解卷处理方法可以使原本不直接对应所观察材料的高分辨晶格像转变成点分辨率达到电镜的信息分辨极限的结构像。  相似文献   

10.
常山  桑志文  庄玲 《激光技术》2012,36(3):405-407
为了利用波动光学的衍射理论分析处理球差,采用先计算像点的光强分布再进一步分析处理球差的方法,对球差进行了理论分析和模拟。从基于点源圆孔衍射的成像原理出发,经过适当推导得到高斯像面上仅有球差像点的光强分布的解析计算式,分析探讨了高斯像面上球差的衍射机理及其计算与校正。结果表明,这种方法能够更为精细地分析处理球差,有助于在光学设计中对球差进行像差平衡与校正、光学加工中对球差的检测与修正以及数码成像时对球差做电子校正等,有利于促进激光技术和微光学以及微光机电系统的发展。  相似文献   

11.
A newly developed 1 MV field-emission transmission electron microscope has recently been applied to the field of superconductivity by utilizing its bright and monochromatic field-emission electron beam. This microscope allows individual magnetic vortices inside high-Tc superconductors to be observed, thus, opening the way to investigate the unusual behaviour of vortices, which reflects the anisotropic layered structure of these superconducting materials. One example is the observation of the arrangements of chain vortex lines that are formed when a magnetic field is applied obliquely to the layer plane of the materials.  相似文献   

12.
We developed a 1 MV field-emission transmission electron microscope. This paper reports details and specifications of the instrument. The microscope was designed to obtain a bright and coherent electron beam by using the field emission gun equipped with a pre-accelerating magnetic lens and the high-voltage power supply with high stability (0.5 ppm min(-1)). Using this microscope, the brightness of 1.8 x 10(10) A cm(-2) sr(-1) and the lattice resolution of 49.8 pm were attained.  相似文献   

13.
SiO2/Si(100) interfaces were for the first time observed by a spherical aberration-corrected high-resolution transmission electron microscope in a cross-sectional mode. As the Fresnel fringes were not contrasted at the interfaces, the interfacial structures were clearly observed without the need for artificial image contrast. Atomic steps and defects on the Si(100) surfaces were accurately identified. Also, image simulations with the target imaging performance revealed oxygen atomic columns between silicon-silicon bonds. The present instrument is of potential use for semiconductor science and technology, even for the analysis of oxygen atoms at interfaces.  相似文献   

14.
We study in situ behavior of platinum single atoms on amorphous carbon (a-carbon) using a spherical aberration-corrected transmission electron microscope (AC-TEM). Diffusion of single atoms, bi-atoms, clusters (<1?nm) and nanoparticles (<3?nm) was recorded in the same image with a time resolution of 1?s, and such diffusion matches the expected mechanism of Ostwald ripening, which was seen on these samples. In situ AC-TEM shows promise for dynamical observation of single atom diffusion, which is important for understanding nanosized catalysts and ceramic sintering processes. We apply in situ AC-TEM to image platinum (Pt) nanoparticles on a-carbon, which is a model catalyst system for the real Pt electrode catalysts using alloys and core-shell structures supported on carbon/oxide composite materials in the proton exchange membrane fuel cell.  相似文献   

15.
Progress in aberration-corrected scanning transmission electron microscopy   总被引:1,自引:0,他引:1  
A new corrector of spherical aberration (C(S)) for a dedicated scanning transmission electron microscope (STEM) is described and its results are presented. The corrector uses strong octupoles and increases C(C) by only 0.2 mm relative to the uncorrected microscope. Its overall stability is greatly improved compared to our previous design. It has achieved a point-to-point resolution of 1.23 A in high-angle annular dark field images at 100 kV. It has also increased the current available in a 1.3 A-sized probe by about a factor of ten compared to existing STEMs. Its operation is greatly assisted by newly developed autotuning software which measures all the aberration coefficients up to fifth order in less than one minute. We conclude by discussing the present limits of aberration-corrected STEM, and likely future developments.  相似文献   

16.
电子全息静电双棱镜二氧化硅细丝是在透射电子显微镜中进行电子全息实验的关键部件,目前国内尚不能制备.本文采用简单易行的方法,加工制作了镀金石英细丝,直径约1 μm,并粘接在电子全息静电双棱镜的电极上,导电性良好,获得了条纹间距优于0.2 nm的电子全息干涉图.  相似文献   

17.
文章简要介绍了透射电镜和扫描电镜两种当前主要的电子显微分析方法的应用,比较了它们的结构和工作原理,讨论了各自的应用范围以及发展方向,指出将两者有机结合可以得到比较全面的材料分析结果。  相似文献   

18.
Linear and non-linear image components in high-resolution transmission electron microscope images were successfully separated by applying a bandpass filter to the three-dimensional Fourier spectrum of its through-focus series of images. In the observed lattice image of a wedgeshaped Si [110] crystal, we determined the magnitude of the contribution of the non-linear imaging components to the total image intensity distribution. The contribution was proved to become sometimes larger than that of the linear imaging component, even at a thickness of 13 nm.  相似文献   

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