Defect engineering on phase structure and temperature stability of KNN‐based ceramics sintered in different atmospheres

Lead‐free MnO‐doped 0.955K_0.5Na_0.5NbO₃‐0.045Bi_0.5Na_0.5ZrO₃ (Abbreviated as KNN‐0.045BNZ) ceramics have been prepared by the conventional solid‐state sintering method in reducing atmosphere ( = 1 × 10^?10 atm) and air. For ceramics sintered in reducing atmosphere, only Mn²⁺ ions exist in ceramics who preferentially occupy the cation vacancies in A‐site at x = 0.2‐0.4, whereas Mn²⁺ ions substitute for Zr⁴⁺ ions in B‐site to form defects () at x > 0.4. For ceramics sintered in air, mixed Mn²⁺, Mn³⁺, and Mn⁴⁺ ions coexist here. The Mn²⁺ ions preferentially occupy the cation vacancies in A‐site at x = 0.2‐0.4 and then Mn²⁺ ions substitute for Zr⁴⁺ ions in B‐site at x > 0.4. Meanwhile, the Mn³⁺ ions and Mn⁴⁺ ions substitute for Nb⁵⁺ ions in B‐site to form defects () at x = 0.2‐0.8. The (, , and ) dipolar defects show a positive dipolar defect contribution (DDC) to the , whereas the dipolar defects () show a negative DDC to the . The dipolar defects ( ‐ and ) can help improve the temperature stability of . The 0.4% MnO‐doped KNN‐0.045BNZ ceramics sintered in reducing atmosphere show excellent piezoelectric constant d₃₃ = 300 pC/N and 0.2% MnO‐doped KNN‐0.045BNZ ceramics sintered in air possess optimal piezoelectric constant d₃₃ = 290 pC/N.     

Estimation of Stress Exponent and Activation Energy for Rapid Densification of 8 mol% Yttria‐Stabilized Zirconia Powder

The rapid densification behavior of 8 mol% Y₂O₃‐stabilized ZrO₂ polycrystalline (8Y‐SZP) powder compacts at the initial stage of pressure sintering (relative density () below 0.92) has been investigated using an electric current‐activated/assisted sintering (ECAS) system. Data points corresponding to a fixed heating rate were extracted from the densification rate () versus ρ and versus temperature (T) curves. These curves were obtained experimentally by consolidation at a fixed current. Under fixed current ECAS, the heating rate () decreases continuously over sintering time. Using a quasi‐ constant heating rate (CHR) method, data points were extracted to plot vs. ρ, vs. T, and ρ vs. T curves at a fixed . The stress exponent (n), estimated from a log‐log plot of grain size (d)‐corrected /ρ and effective stress (σ_eff) at 1300–1400 K, shows an almost constant value of 1. In addition, the activation energy (Q) for rapid densification, estimated from an Arrhenius plot of d‐corrected /ρ also shows an almost constant value of 350 kJ/mol, which is considerably lower than the previously reported value of the activation energy for Zr⁴⁺ lattice diffusion of about 440 kJ/mol. These results suggest that rapid densification of 8Y‐SZP by ECAS seems to proceed by diffusional creep controlled by grain‐boundary diffusion of Zr⁴⁺ ions.     

A piezomicrobalance system for high‐temperature mass relaxation characterization of metal oxides: A case study of Pr‐doped ceria

A system for mass relaxation studies based on a gallium phosphate piezocrystal microbalance has been developed, built, and successfully used to characterize a representative mixed ionic and electronic conducting material. The apparatus is constructed to achieve reactor gas exchange times as short as 2 seconds and temporal resolution in mass measurement of 0.1 seconds. These characteristics enabled evaluation of mass relaxations that occurred on the 6 seconds time scale. Proof of concept for materials characterization capabilities of the system was carried out using 10% praseodymium‐doped cerium oxide (PCO), a material that undergoes, at selected temperatures and oxygen partial pressures, changes in mass but not in conductivity. Thin films were deposited on the piezocrystals via pulsed laser deposition (PLD). Mass relaxation curves were collected at 700°C upon application of a small step change in oxygen partial pressure, . Using two different films, the surface reaction constant, k_S, was obtained over the range from 10^?4 to 0.1 atm. Its value is found to vary between 9.7 × 10^?6 and 1.7 × 10^?4 cm/s, displaying a power law dependence on , with a law exponent of 0.67 ± 0.02, as averaged over the two sets of results. This steep dependence of k_S on is surprisingly independent of a change in dominant defect type within the range of measurement.     

Effect of the (Ba + Sr)/Ti ratio on the microwave‐tunable properties of Ba0.6Sr0.4TiO3 ceramics

The impact of the (Ba + Sr)/Ti (A/B) ratio on the microwave‐tunable characteristics of diffuse phase transition (DPT) ferroelectric Ba_0.6Sr_0.4TiO₃ (0.6‐BST) ceramics was investigated. The reduction in the lattice constant with increasing nonstoichiometry was attributed to introduced partial Schottky defects, i.e., and . The magnitude of the dielectric constant, ε′, at room temperature in the absence of an applied electric field was governed by the shift in the dielectric maximum temperature, T_m, because T_m was close to room temperature for the 0.6‐BST. The dielectric loss, tanδ, diminished as the ε′ decreased for 0.98≤A/B≤1.05, while the tanδ was much higher for A/B=0.95 having the greatest A‐site vacancy loading. The negatively charged and were mainly compensated by oxygen vacancies and likely partly compensated by holes, h^?, which contributed to the electrical conduction. The tunability, T, at 100 MHz was almost constant at 20%–25% for A/B≥1.00 despite the reduction of the ε′, whereas T decreased for A/B<1.00 to ca. 10% for A/B=0.95 having the greatest A‐site vacancy loading. The results implied that the for larger A/B values was more efficient in generating nucleation sites in the polar nanoregions (PNRs) than the for smaller A/B values, thereby providing greater dipole polarization. Consequently, the figure of merit, FOM, reached its maximum of 250 at A/B=0.9875, which was ca. 155% higher than that of the stoichiometric BST.     

Microstructure and Magnetic Properties of Metastable RFeO3 (R: Rare‐earth element) Formed from Undercooled Melt

Containerless levitation technique, where the undercooling can be treated as one of the major thermodynamic parameters, was used to study the influence of oxygen partial pressure () on the microstructure and physical properties of rare‐earth orthoferrites RFeO₃ (where R = Rare‐earth element) in the ranges from 10⁵ to 10^?1 Pa. The microstructure of the as‐solidified samples changed into orthorhombic RFeO₃ (o‐RFeO₃), metastable hexagonal RFeO₃ (h‐RFeO₃), and Fe²⁺‐containing RFe₂O₄ and a new metastable R₃Fe₂O₇ phases with decreasing . The effect of on the magnetic properties was indicated as that the saturation magnetization gradually increased for R = La to Yb and decreased for R = Lu with decreasing due to the formation of metastable and magnetic phases such as Fe₃O₄ and Fe.     

Composition‐induced structural transitions and enhanced strain response in nonstoichiometric NBT‐based ceramics

In this work, the nonstoichiometric 0.99Bi_0.505(Na_0.8K_0.2)_0.5‐xTiO₃‐0.01SrTiO₃ (BNKST(0.5‐x)) ceramics with x=0‐0.03 were synthesized by conventional solid‐state reaction method. The composition‐induced structural transitions were investigated by Raman spectra, dielectric analyses, and electrical measurements. It is found that the relaxor phase can be induced through the modulation of the (Na, K) content. The (Na, K) deficiency in BNKST(0.5‐x) ceramics favors a more disordered local structure and can result in the loss of long‐range ferroelectricity. The x=0.015 critical composition possesses relatively high positive strain S_pos of 0.42% and large signal piezoelectric constant d₃₃* of 479 pm V^?1 at 6 kV mm^?1, along with the good temperature (25‐120°C) and frequency (1‐20 Hz) stability. The recoverable large strain responses in nonstoichiometric ceramics can be attributed to the reversible relaxor‐ferroelectric phase transition, which is closely related to the complex defects (, , and ) and the local random fields. This work may be helpful for the exploration of high‐performance NBT‐based lead‐free materials by means of A‐site compositional modification.     

Electrochemical Determination of Gibbs Energy of Formation of LaCrO3 Using a Composition‐Graded Bielectrolyte

Presented are new measurements of the standard Gibbs free energy of formation of rhombohedral LaCrO₃ from component oxides La₂O₃ and Cr₂O₃ in the temperature range from 875 to 1175 K, using a bielectrolyte solid‐state cell incorporating single crystal CaF₂ and composition‐graded solid electrolyte (LaF₃)_y·(CaF₂)_1?y (y = 0–0.32). The results can be represented analytically as (±2270)/J·mol^?1 = ?72329 + 4.932 (T/K). The measurements were undertaken to resolve serious discrepancies in the data reported in the literature. A critical analysis of previous electrochemical measurements indicates several deficiencies that have been rectified in this study. The enthalpy of formation obtained in this study is consistent with calorimetric data. The standard enthalpy of formation of orthorhombic LaCrO₃ from elements at 298.15 K computed from the results of this study is /kJ·mol^?1 = ?1536.2 (±7). The standard entropy of orthorhombic LaCrO₃ at 298.15 K is estimated as 99.0 (±4.5) J·(mol·K)^?1.     

Temperature stability and electrical properties of MnO‐doped KNN‐based ceramics sintered in reducing atmosphere

Lead‐free MnO‐doped 0.955K_0.5Na_0.5NbO₃‐0.045Bi_0.5Na_0.5ZrO₃ (abbreviate as KNN‐0.045BNZ) ceramics have been prepared by a conventional solid‐state sintering method in reducing atmosphere. The MnO addition can suppress the emergence of the liquid phase and improve the homogenization of grain size. All ceramics sintered in reducing atmosphere show a two‐phase coexistence zone composed of rhombohedral (R) and tetragonal (T) phase. MnO dopant results in the content increase in R phase and slight increase in Curie temperature T_C. For KNN‐0.045BNZ ceramics, Mn²⁺ ions preferentially occupy the cation vacancies in A‐site to decrease oxygen vacancy concentration for 0.2%‐0.4% MnO content, whereas Mn²⁺ ions substitute for Zr⁴⁺ ions in B‐site to form oxygen vacancies at x ≥ 0.5. The defect dipole is formed at the moderate concentration from 0.5 to 0.6, which can provide a preserve force to improve the temperature stability of piezoelectric properties for k_p and . The Mn0.4 ceramics show excellent electrical properties with quasistatic piezoelectric constant d₃₃ = 300 pC/N, electromechanical coupling coefficient k_p = 51.2%, high field piezoelectric constant  = 430 pm/V (at E_max = 25 kV/cm) and T_C = ~345°C, insulation resistivity ρ  =  6.13 × 10¹¹ Ωcm.     

Lattice and Grain‐Boundary Diffusion of Al in Tetragonal Yttria‐Stabilized Zirconia Polycrystalline Ceramics (3Y‐TZP) Analyzed Using SIMS

Aluminum oxide was deposited on the surface of 3 mol% yttria‐stabilized tetragonal zirconia polycrystals (3Y‐TZP). The samples were annealed at temperatures from 1523 to 1773 K. Diffusion profiles of Al in the form of mean concentration vs. depth in B‐type kinetic region were investigated by secondary ion mass spectroscopy. The experimental results for the lattice diffusion (D_B) and grain boundary diffusion (D_GB) are as follows: and where δ is the grain‐boundary width and s is the segregation factor.     

Electrical Properties and Relaxor Phase Evolution of Li‐Modified BNT‐BKT‐BT Lead‐Free Ceramics

By conventional ceramics sintering technique, the lead‐free 0.85Bi_0.5Na_0.5(1?x)Li_0.5xTiO₃‐0.11Bi_0.5K_0.5TiO₃‐0.04BaTiO₃ (x =0–0.15) piezoelectric ceramics were obtained and the effects of Li dopant on the piezoelectric, dielectric, and ferroelectric properties were studied. With increasing Li addition, the temperature‐dependent permittivity exhibited the normal ferroelectric‐to‐ergodic relaxor (FE‐to‐ER) transition temperature (T_FE‐ER, abbreviated as T_F‐R) decreasing down to room temperature. The increasing Li content also enhanced the diffuseness of the FE‐to‐ER transition behavior. For composition with x = 0.15, a large unipolar strain of 0.37% ( = S_max/E_max = 570 pm/V) was achieved under 6.5 kV/mm applied electric field at room temperature. Both unipolar and bipolar strain curves related to the temperature closely, and when the temperature reached the T_F‐R, the normalized strain achieved a maximum value (e.g., for x = 0.10, = 755 pm/V) owing to the electric‐field‐induced ER‐to‐FE state transition.     

First‐principles investigation of the thermodynamic stability of MB2 materials surfaces (M = Ti/Zr/Hf)

Some of the renewed interest in transition metal diborides (MB₂, M = Ti/Zr/Hf) arises from their potential use as matrices in ultrahigh‐temperature ceramic matrix composites (UHTCMCs). Crucial to the understanding of such composites is the study of the fiber/matrix interfaces, which in turn requires a deep knowledge of the surface structures and the thermodynamics of the matrix material. Here we investigate the surface stability of MB₂ compounds by first‐principles calculations. Five surfaces are stabilized when going from a M‐rich to a B‐rich environment, respectively (0001)_M, (100)_M, (101)_B(M), (113)_M and (0001)_B, with the highly stable (100)_M, (101)_B(M) and (113)_M surfaces being discussed here for the first time. The mechanism behind the surface stability is analyzed in terms of cleavage energy, surface strain and surface bonding states. Our results provide important information for a better understanding of the most likely surfaces exposed to the fibers in UHTCMCs, thereby for the construction of reliable interfaces and ultimately UHTCMCs models.     

First‐Principles Study of Sc1−xTixF3 (x ≤ 0.375): Negative Thermal Expansion,Phase Transition,and Compressibility

We present the first‐principles investigation of (x ≤ 0.375). Controllable thermal expansion of is achieved by different Ti contents. The negative thermal expansion (NTE) behavior is weakened gradually with increasing Ti content, which is consistent with experimental measurements. The Jahn–Teller effect plays an important role in the cubic‐to‐rhombohedral phase transition, which stems from the enhanced energy stability when the 3d orbitals of cation split into triply degenerate and sets. The unusual thermal stiffening of is found, which is similar to that of and but contrary to other NTE materials.     

Enhanced O2 Flux of CaTi0.85Fe0.15O3−δ Based Membranes by Mn Doping

Dense symmetric membranes of CaTi_0.85?xFe_0.15Mn_xO_3?δ (x = 0.1, 0.15, 0.25, 0.4) are investigated in order to determine the optimal Mn dopant content with respect to highest O₂ flux. O₂ permeation measurements are performed as function of temperature between 700°C–1000°C and as function of the feed side ranging between 0.01 and 1 bar. X‐ray photoelectron spectroscopy is utilized to elucidate the charge state of Mn, and synchrotron radiation X‐ray powder diffraction (SR‐XPD) is employed to investigate the structure symmetry and cell volume of the perovskite phase at temperatures up to 800°C. The highest O₂ permeability is found for x = 0.25 over the whole temperature and ranges, followed by x = 0.4 above 850°C. The O₂ permeability for x = 0.25 reaches 0.01 mL(STP) min^?1 cm^?1 at 925°C with 0.21 bar feed side and Ar sweep gas. X‐ray photoelectron spectroscopy indicates that the charge state of Mn changes from approx. +3 to +4 when x > 0.1, which implies that Mn mainly improves electronic conductivity for x > 0.1. The cell volume is found to decrease linearly with Mn content, which coincides with an increase in the activation energy of O₂ permeability. These results are consistent with the interpretation of the temperature and dependency of O₂ permeation. The sintering behavior and thermal expansion properties are investigated by dilatometry, which show improved sinterability with increasing Mn content and that the thermal expansion coefficient decreases from 12.4 to 11.9 × 10^?6 K^?1 for x = 0 and x = 0.25, respectively.     

Layered Structure Induced Anisotropic Low‐Energy Recoils in Ti3SiC2

Low‐energy recoil events in Ti₃SiC₂ are studied using ab initio molecular dynamics simulations. We find that the threshold displacement energies are orientation dependent because of anisotropic structural and/or bonding characteristic. For Ti and Si in the Ti–Si layer with weak bonds that have mixed covalent, ionic, and metallic characteristic, the threshold displacement energies for recoils perpendicular to the basal planes are larger than those parallel to the basal planes, which is an obvious layered‐structure‐related behavior. The calculated minimum threshold displacement energies are 7 eV for the C recoil along the direction, 26 eV for the Si recoil along the direction, 24 eV for the Ti in the Ti–C layer along the direction and 23 eV for the Ti in the Ti–Si layer along the direction. These results will advance the understanding of the cascade processes of Ti₃SiC₂ under irradiation and are expected to yield new perspective on the MAX phase family that includes more than 100 compounds.     

Domain engineering enhanced microwave tunability in nonstoichiometric Ba0.8Sr0.2TiO3

Domain engineering via oxygen vacancy, , loading achieved by A/B modification as well as quenching treatment, was utilized for Ba_0.8Sr_0.2TiO₃ (0.8 BSTs) in an attempt to enhance the microwave tunable characteristics. For similar grain sizes, the domain sizes were notably reduced for all nonstoichiometric BSTs, indicating that the loaded (as a consequence of Ti defects, ) played a role in the nuclei for new domain walls. The tunability T at 100 MHz under a direct current field of 30 V/20 μm increased steadily as the domain size (d.s.) declined for all BSTs, regardless of the A/B ratio, due to the d.s. effect. The tunable characteristics in nonstoichiometric BSTs having a similar d.s. of ?190 nm were then compared. The tunability and tan δ decreased for A/B = 1.002 (0.2 mol% Ti defects). The introduced formed pinning centers that restricted domain wall motion, leading directly to lower tunability and smaller dielectric loss. However, ‐overloaded samples (i.e., A/B ≥ 1.005) exhibited increased values for tan δ due to conduction in the domains. The quench treatment of 0.8 BST (with A/B = 1.002) samples resulted in a d.s. reduction from 191 to 170 nm. These quenched specimens showed greater tunability, T_total, originating from the strengthened dipole contribution, T_dipole, as a consequence of the d.s. effect. The tan δ of the quenched specimens was essentially unchanged, indicating a homogenous distribution via the quench, effectively reducing the mobile (which contributes to electrical conduction) in the domains. Consequently, the achieved figure of merit via domain engineering was 2.25 at 100 MHz for the quenched BST with A/B = 1.002, which was 1.54 times larger than that of unmodified BST.     

Effects of K2O Evaporation on the Structural Properties of KSbO3 Compounds

A specimen having a stoichiometric composition of KSbO₃·(KSb) calcined at 800°C has an R rhombohedral structure (RS), and changes to a Pn cubic structure (CS) when calcined at 1100°C. Finally, a <111>‐oriented rhombohedral phase is formed in the specimen calcined at 1230°C. K/Sb ratio decreases from 1.0 in RS, 0.93 in CS, and finally to 0.85 in <111>‐oriented rhombohedral phases. On the other hand, a specimen having a K‐excess composition of K_1.1SbO₃ calcined at 800°C shows a RS that is maintained in the K‐excess specimen calcined at 1230°C. The composition of these specimens is very close to KSb. Therefore, the RS with a space group of R is a stable form of KSbO₃. The formation of Pn cubic and <111>‐oriented R phases can be explained by the evaporation of K₂O during the calcination process at temperatures above 1100°C.     

Use of Volume Element Methods to Understand Experimental Differences in Active/Passive Transitions and Active Oxidation Rates for SiC

Quantitative evaluation of oxidation behavior of high‐temperature materials is imperative for applications in a Silicon carbide (SiC)‐based thermal protection system (TPS) of reentry space vehicles. However, the reported oxidation rates obtained using thermogravimetric analysis (TGA) have been widely varied among researchers. In this study, this variation is assumed to be attributable to differences in the oxygen partial pressure at the sample surface due to different configuration of the experimental devices. Existing data are usually given as a function of the surface temperature of a specimen T_S with the partial pressure of oxygen in the input gas as a main parameter. However, even if and T_S are set to the same, the oxygen partial pressure on specimen surface and gas temperature T_G are expected to vary widely, respectively, from , T_S, and according to the difference in the oxidative environments. To evaluate these effects in various apparatuses, numerical calculations were conducted for the case of SiC. From these results, was found to be main source of the variation in oxidation rates.     

Growth of diopside crystals in CMAS glass‐ceramics using Cr2O3 as a nucleating agent

CaO–Al₂O₃–MgO–SiO₂ (CAMS)‐based glass‐ceramics were prepared using body crystallization method. Adding Cr₂O₃ into the ceramics not only effectively lowered the crystallization temperature, but also led to significant grain refinement of diopside that crystallized in the CAMS glass‐ceramic after crystallization treatment at 900°C for 2 hours. Experimental work verified that the epitaxial growth of the diopside on the spinel particles, which formed during nucleation treatment when fabricating the glass‐ceramics, facilitated the heterogeneous nucleation of diopside on the spinel and refined the diopside. In addition, two energetically favored crystallographic orientation relationships between the epitaxial growth diopside and spinel were experimentally observed. They are //[001]_diopside,////(200)_diopside and //[101]_diopside, (311)_spinel//. These two novel results can be potentially used to develop new glass‐ceramic materials with improved performance.     

Structure and Microwave Dielectric Behavior of A‐Site‐Doped Sr(1−1.5x)CexTiO3 Ceramics System

The ion valence state, phase composition, microstructure, and microwave dielectric properties of Sr_(1?1.5x)Ce_xTiO₃ (x = 0.1–0.67, SCT) ceramics were systematically investigated. Sr_(1?1.5x)Ce_xTiO₃ ceramics were produced with gradual structural evolution from a cubic to a tetragonal and turned to an orthorhombic structure in the range of 0.1 ≤ x ≤ 0.67. Above a critical Ce proportion (x = 0.4), microstructural changes and normal grain growth initially occurred. On the basis of chemical analysis results, the reduction of Ti⁴⁺ ions was hastened by tetravalent ions (Ce⁴⁺). By contrast, this reduction was inhibited by trivalent ions (Ce³⁺). The observed dielectric behavior was strongly influenced by phase composition, oxygen vacancies (), and defect dipoles, namely, () and (). Temperature stable ceramics sintered at 1350°C for 3 h in air yielded an intermediate value of dielectric constant (ε_r = 40), with the smallest reported value of temperature coefficient of resonant frequency (τ_f = +0.9 ppm/°C), and quality factor (Q × f = 5699 GHz) at x = 0.6.     

Cationic effect of charge compensation on the sulfide capacity of aluminosilicate slags

The effect of CaO on the sulfide capacity of CaO‐Al₂O₃‐SiO₂ slags was studied from the viewpoint of the ionic structure of alumina in slag. The aluminum coordination number was analyzed using ²⁷Al 500‐MHz solid nuclear magnetic resonance spectroscopy and the results were compared with those of the sulfide capacity analysis. The sulfide capacity of slag, in the peralkaline region (), exhibited a linear relationship with respect to basicity () as excess free Ca²⁺ formed a 4‐coordinated aluminum unit structure (^[IV]Al; ) and stabilized the sulfide ions (). However, sulfide capacity in the peraluminous region () exhibited a nonlinear relationship with respect to basicity () owing to the structure of higher‐coordinated aluminum units (^[V]Al, ^[VI]Al; Al³⁺) and the relative lack of Ca²⁺. Therefore, the sulfide capacity of high Al₂O₃‐bearing slags strongly depended on the basicity () and stability of sulfide ions (), which depended on the competitive behavior of Ca²⁺ owing to the structural changes in Al₂O₃. The effect of the aluminum coordination number on the sulfide capacity was discussed in detail using an analysis of the slag structure and thermodynamics model.