The temperature dependence of the relative grain‐boundary energy of yttria‐doped alumina

Atomic force microscopy was used to measure the dimensions of grain‐boundary thermal grooves on the surfaces of Al₂O₃, 100 ppm Y‐doped Al₂O₃, and 500 ppm Y‐doped Al₂O₃ ceramics heated at temperatures between 1350°C and 1650°C. The measurements were used to estimate the relative grain‐boundary energies as a function of temperature. The relative grain‐boundary energies of Al₂O₃ decrease slightly with increased temperature. When the doped samples were heated, there was an overall increase in the grain‐boundary energy, attributed to a reduction in the grain boundary excess at higher temperature. The overall trend of increasing grain‐boundary energy was interrupted by abrupt reductions in grain‐boundary energy between 1450°C and 1550°C. In the same temperature range, there is an abrupt increase in the grain‐boundary mobility that is associated with a complexion transition. When the 100 ppm Y‐doped sample was cooled, there was a corresponding increase in the relative grain‐boundary energy at the same complexion transition temperature, indicating that the transition is reversible.     

Microstructure and Li‐Ion Conductivity of Hot‐Pressed Cubic Li7La3Zr2O12

The effect of hot‐pressing temperature on the microstructure and Li‐ion transport of Al‐doped, cubic Li₇La₃Zr₂O₁₂ (LLZO) was investigated. At fixed pressure (62 MPa), the relative density was 86%, 97%, and 99% when hot‐pressing at 900°C, 1000°C, and 1100°C, respectively. Electrochemical impedance spectroscopy showed that the percent grain‐boundary resistance decreased with increasing hot‐pressing temperature. Hot pressing at 1100°C resulted in a total conductivity of 0.37 mS/cm at room temperature where the grain boundaries contributed to 8% of the total resistance; one of the lowest grain‐boundary resistances reported. We believe hot pressing is an appealing technique to minimize grain‐boundary resistance and enable correlations between LLZO composition and bulk ionic conductivity.     

Oxygen‐ion conduction in scandia‐stabilized zirconia‐ceria solid electrolyte (xSc2O3–1CeO2–(99−x)ZrO2, 5 ≤ x ≤ 11)

Solid oxide fuel cells (SOFCs) operating at intermediate temperature (500°C‐700°C) provide advantages of better durability, lower cost, and wider target application market. In this work, we have studied Sc₂O₃ (5‐11 mol%) stabilized ZrO₂–CeO₂ as a potential solid electrolyte for application in IT‐SOFCs. Lower Sc₂O₃ doping range than the traditional 11 mol% Sc₂O₃‐stabilized ZrO₂ is an interesting research topic as it could potentially lead to an electrolyte with reduced oxygen vacancy ordering, lower cost, and higher mechanical strength. XRD and Raman spectroscopy was used to study the phase equilibrium in ZrO₂–CeO₂–Sc₂O₃ system and impedance spectroscopy was done to estimate the grain, grain boundary, and total ionic conductivities. Maximum for the grain and grain‐boundary conductivities as well as the tetragonal‐cubic phase boundary was found at 8‐9 Sc₂O₃ mol% in ZrO₂‐1 mol% CeO₂ system. It is suggested that the addition of 1 mol% CeO₂ in the ZrO₂ host lattice has improved the phase stability of high‐conductivity cubic and tetragonal phases at the expense of low‐conductivity t′‐ and β‐phases.     

Stability and electrical properties of MoSi2‐ and WSi2‐oxide electroconductive composites

MoSi₂‐ and WSi₂‐based electroconductive ceramic composites were fabricated using 40‐80 vol% fine‐ and coarse‐Al₂O₃, and ZrO₂ particles (refractory oxides) after sintering in argon. Their chemical and thermal stability was tested between 1400°C‐1600°C for up to 48 hours. X‐ray diffraction analysis showed the formation of secondary 5‐3 metal silicide (Mo₅Si₃, W₅Si₃) and silica phases on the grain boundaries and surface. The fraction of the W₅Si₃ (11.4‐38.8 vol%) was significantly higher than that of the Mo₅Si₃ (3.3‐7.3 vol%) in the composites after annealing at 1400°C for 48 hours. The rates of grain growth in the composites (0.013‐0.023 μm/h) were highly decreased by a grain‐boundary pinning effect. This effect was relatively better with the addition of the coarse‐grained oxides due to their more homogeneous distribution throughout the microstructure. The 20–80 vol% MoSi₂‐Al₂O₃ (fine‐grained) composite exhibited an electrical conductivity of 8.8 S/cm at 900°C. At the 60 vol% silicide content, MoSi₂–Al₂O₃ (coarse‐grained) and WSi₂–Al₂O₃ (fine‐grained) showed higher electrical conductivity (126‐128 S/cm) at 900°C. The density, porosity level, particle distribution, intrinsic conductivity of silicide phase, particle size, and fraction of the secondary 5‐3 silicide phase highly influenced their electrical properties.     

AC Impedance Spectroscopy of CaF2‐doped AlN Ceramics

The electrical conductivity of CaF₂‐doped aluminum nitride (AlN) ceramics was characterized at high temperatures, up to 500°C, by AC impedance spectroscopy. High thermal conductive CaF₂‐doped AlN ceramics were sintered with a second additive, Al₂O₃, added to control the electrical conductivity. The effects of calcium fluoride (CaF₂) on microstructure and related electrical conductivity of AlN ceramics were examined. Investigation into the microstructure of specimens by TEM analysis showed that AlN ceramics sintered with only CaF₂ additive have no secondary phases at grain boundaries. Addition of Al₂O₃ caused the formation of amorphous phases at grain boundaries. Addition of Al₂O₃ to CaF₂‐doped AlN ceramics at temperatures 200°C–500°C revealed a variation in electrical resistivity that was four orders of magnitude larger than for the specimen without Al₂O_3. The amorphous phase at the grain boundary greatly increases the electrical resistivity of AlN ceramics without causing a significant deterioration of thermal conductivity.     

The Effects of Na2O and SiO2 on Liquid Phase Sintering of Bayer Al2O3

To determine how grain‐boundary composition affects the liquid phase sintering of MgO‐free Bayer process aluminas, samples were singly or co‐doped with up to 1029 ppm Na₂O and 603 ppm SiO₂ and heated at 1525°C up to 8 h. Na₂O retards densification of samples from the onset of sintering and up to hold times of 30 min at 1525°C compared to the undoped samples, but similar to the as‐received, MgO‐free Al₂O₃, Na₂O‐doped samples sinter to 98% density with average grain sizes of ~3 μm after 8 h. Increasing SiO₂ concentration significantly retards densification at all hold times up to 8 h. The estimated viscosities (20?400 Pa·s) of the 0.3 to 1.8 nm thick siliceous grain‐boundary films in this study indicate that diffusion greatly depends on the composition of the liquid grain‐boundary phase. For low Na₂O/SiO₂ ratios, densification of Bayer Al₂O₃ at 1525°C is controlled by diffusion of Al³⁺ through the grain‐boundary liquid, whereas for high Na₂O/SiO₂ ratios, densification can be governed by either the interface reaction (i.e., dissolution) of Al₂O₃ or diffusion of Al³⁺. Increasing Na₂O in SiO₂‐doped samples increases diffusion of Al³⁺ and Al₂O₃ solubility in the liquid, and thus densification increases by 1%. Based on these findings, we conclude that Bayer Al₂O₃ densification can be manipulated by adjusting the Na₂O to SiO₂ ratio.     

Effect of Sintering Additives on Relative Density and Li‐ion Conductivity of Nb‐Doped Li7La3ZrO12 Solid Electrolyte

Lithium ion conductors with garnet‐type structure are promising candidates for applications in all solid‐state lithium ion batteries, because these materials present a high chemical stability against Li metal and a rather high Li⁺ conductivity (10^?3–10^?4 S/cm). Producing densified Li‐ion conductors by lowering sintering temperature is an important issue, which can achieve high Li conductivity in garnet oxide by preventing the evaporation of lithium and a good Li‐ion conduction in grain boundary between garnet oxides. In this study, we concentrate on the use of sintering additives to enhance densification and microstructure of Li₇La₃ZrNbO₁₂ at sintering temperature of 900°C. Glasses in the LiO₂‐B₂O₃‐SiO₂‐CaO‐Al₂O₃ (LBSCA) and BaO‐B₂O₃‐SiO₂‐CaO‐Al₂O₃ (BBSCA) system with low softening temperature (<700°C) were used to modify the grain‐boundary resistance during sintering process. Lithium compounds with low melting point (<850°C) such as LiF, Li₂CO₃, and LiOH were also studied to improve the rearrangement of grains during the initial and middle stages of sintering. Among these sintering additives, LBSCA and BBSCA were proved to be better sintering additives at reducing the porosity of the pellets and improving connectivity between the grains. Glass additives produced relative densities of 85–92%, whereas those of lithium compounds were 62–77%. Li₇La₃ZrNbO₁₂ sintered with 4 wt% of LBSCA at 900°C for 10 h achieved a rather high relative density of 85% and total Li‐ion conductivity of 0.8 × 10^?4 S/cm at room temperature (30°C).     

Thermal stability and electric‐field‐induced strain behaviors for PIN‐PSN‐PT piezoelectric ceramics

Pb (In_1/2Nb_1/2) O₃‐Pb (Sc_1/2Nb_1/2) O₃‐PbTiO₃ (PIN‐PSN‐PT) ternary ceramics with compositions near morphotropic phase boundary (MPB) were fabricated by solid‐state‐sintering process. Dielectric and piezoelectric properties of xPIN‐yPSN‐zPT (x = 0.19, 0.23 and z = 0.365, 0.385) ceramics were investigated as a function of temperature, showing high T_r‐t and T_c on the order of 160 ~ 200°C and 280 ~ 290°C, respectively. The xPIN‐yPSN‐0.365PT (x = 0.19 and 0.23) ceramics do not depolarize at the temperature up to 200°C, showing a better thermal stability when compared to the state‐of‐the‐art relaxor‐PbTiO₃ systems. A slight variation (<9%) of k_p, k_t, and k₃₃ was observed in the temperature range of 25°C‐160°C for xPIN‐yPSN‐0.385PT (x = 0.19 and 0.23) ceramics. Rayleigh analysis was employed to quantify the contribution of domain wall motion to piezoelectric response, where the domain wall contribution was found to increase with composition approaching MPB for PIN‐PSN‐PT system.     

Improved Crack Healing and High‐Temperature Oxidation Resistance of Ni/Al2O3 by Y or Si Doping

Recovery of mechanical strength was investigated for 5 vol% Ni/α‐Al₂O₃ nanocomposites that had improved resistance to high‐temperature oxidation by doping with Y or Si (Ni/Al₂O₃‐Y and Ni/Al₂O₃‐Si). Surface cracks disappeared completely because of the oxidation product, NiAl₂O₄. The fraction of crack disappearance was comparable between Ni/Al₂O₃‐Y and Ni/Al₂O₃‐Si. The apparent activation energy of crack healing is similar to the grain‐boundary diffusion of Ni ions in an Al₂O₃ matrix. The rate‐controlling process of crack healing is the grain‐boundary diffusion of cations in an internally oxidized zone (IOZ) of the Ni/Al₂O₃ system. The bending strengths of the as‐sintered and as‐cracked Ni/Al₂O₃‐Y samples were 561 and 232 MPa, respectively. Heat treatment at 1200°C for 6 h resulted in a recovery of the bending strength up to 662 MPa for Ni/Al₂O₃‐Y as well as 606 MPa for Ni/Al₂O₃‐Si. Y and Si dopants were segregated into the Al site at the Al₂O₃ grain boundaries, and then, enhanced covalent bonding occurred with neighboring oxygen. While the flux of Ni ions was retarded slightly by doping with Y and Si, a shorter IOZ provided enough Ni ions to form NiAl₂O₄ on the surface. Ni/Al₂O₃‐Y and Ni/Al₂O₃‐Si have the desirable properties of crack healing and resistance to high‐temperature oxidation.     

Effect of Si3N4 Addition on Compressive Creep Behavior of Hot‐Pressed ZrB2–SiC Composites

Compressive creep studies have been carried out on hot‐pressed ZrB₂–SiC (ZS) and ZrB₂–SiC–Si₃N₄ (ZSS) composites in air under stress and temperature ranges of 93–140 MPa and 1300°C–1425°C, respectively for time durations of ≈20–40 h. The results of these studies have shown the creep resistance of ZS composite to be greater than that of ZSS. As the temperature is increased from 1300°C to 1425°C, the stress exponent of ZS decreases from 1.7 to 1.1, whereas that of ZSS drops from 1.6 to 0.6. The activation energies for these composites have been found as ≈95 ± 32 kJ/mol at temperatures ≤1350°C, and as ≈470 ± 20 kJ/mol in the range of 1350°C–1425°C. Studies of the postcreep microstructures using scanning and transmission electron microscopy have shown the presence of glassy film with cracks at both ZrB₂ grain boundaries and ZrB₂–SiC interfaces. These results along with calculated values of activation volumes suggest grain‐boundary sliding as the major damage mechanism, which is controlled by O^2? diffusion through SiO₂ at ≤1350°C, and by viscoplastic flow of the glassy interfacial film at temperatures ≥1350°C. Studies by transmission electron microscopy have shown formation of crystalline precipitates of Si₂N₂O near ZrB₂–SiC interfaces in ZSS tested at ≥1400°C, which along with stress exponent values <1 suggests that grain‐boundary sliding involving solution‐precipitation‐type mechanism is operative at these temperatures.     

High‐performance varistors prepared by hot‐dipping tin oxide thin films in Sb2O3 powder: Influence of temperature

A series of SnO_x–Sb₂O₃ thin film varistors were fabricated through hot‐dipping tin oxide films deposited by radio‐frequency magnetron sputtering in Sb₂O₃ powder at varied temperatures in air. With the increase in hot‐dipping temperature (HDT) from 200°C to 600°C, the nonlinear coefficient (α) of the samples increased first and then decreased, reaching the maximum at 500°C, which was mainly determined by the completeness of high‐resistant Sb₂O₃ layer at tin oxide grain boundary and the chemical composition of tin oxide films. Correspondingly, the leakage current (I_L) decreased first and increased later. The breakdown electric field (E_100 mA) decreased constantly with increasing HDT. The SnO_x–Sb₂O₃ film varistors prepared at 500°C exhibited the optimum nonlinear properties with the maximum α of 10.88, the minimum I_L of 36.3 mA/cm², and an E_100mA of 0.0188 V/nm. The obtained nanoscaled film varistors would be promising in electrical/electronic devices working in low voltage.     

Perfect High‐Temperature Plasticity Realized in Multiwalled Carbon Nanotube‐Concentrated α‐Al2O3 Hybrid

We investigate the high‐temperature compressive deformation behavior of a novel, fully dense and structurally uniform, 20 vol% multiwalled carbon nanotube (MWCNT)–α‐Al₂O₃ matrix hybrid, which has a strong room‐temperature interfacial shear resistance (ISR) and a unique MWCNT‐concentrated grain‐boundary (GB) structure. We realized a perfect plastic deformation at 1400°C and a rather high initial strain rate of 10^?4 s^?1 by a low ~30 MPa flow stress, which is contrary to the strain hardening response of fine‐grain monolithic Al₂O₃. This unique performance in CNT–ceramic system in compression is explained as follows: the concentrated network of individual MWCNTs perfectly withstands the high‐temperature and shear/compressive forces, and strongly preserves the nanostructure of Al₂O₃ matrix by preventing the dynamic grain growth, even during a large ~44% deformation. Furthermore, the presence of large amount of radially soft/elastic, highly energy‐absorbing MWCNTs in the GB and specially multiple junction areas, and a potentially weak 1400°C‐ISR, could greatly facilitate the GB sliding process (despite the hybrid's strong room‐temperature ISR), as evidenced by the formation of some submicrometer‐scale MWCNT aggregates in GB area, the equiaxed grains and dislocation‐free nanostructure of the deformed hybrid. The results presented here could be attractive for the ceramic forming industry and could be regarded as a reference for oxide systems in which, the GB areas are occupied with soft/elastic, highly energy‐absorbing nanostructures.     

Liquid‐phase sintering,microstructural evolution,and microwave dielectric properties of Li2Mg3SnO6–LiF ceramics

The liquid‐phase sintering behavior and microstructural evolution of x wt% LiF aided Li₂Mg₃SnO₆ ceramics (x = 1‐7) were investigated for the purpose to prepare dense phase‐pure ceramic samples. The grain and pore morphology, density variation, and phase structures were especially correlated with the subsequent microwave dielectric properties. The experimental results demonstrate a typical liquid‐phase sintering in LiF–Li₂Mg₃SnO₆ ceramics, in which LiF proves to be an effective sintering aid for the Li₂Mg₃SnO₆ ceramic and obviously reduces its optimum sintering temperature from ~1200°C to ~850°C. The actual sample density and microstructure (grain and pores) strongly depended on both the amount of LiF additive and the sintering temperature. Higher sintering temperature tended to cause the formation of closed pores in Li₂Mg₃SnO₆‐x wt% LiF ceramics owing to the increase in the migration ability of grain boundary. An obvious transition of fracture modes from transgranular to intergranular ones was observed approximately at x = 4. A single‐phase dense Li₂Mg₃SnO₆ ceramic could be obtained in the temperature range of 875°C‐1100°C, beyond which the secondary phase Li₄MgSn₂O₇ (<850°C) and Mg₂SnO₄ (>1100°C) appeared. Excellent microwave dielectric properties of Q × f = 230 000‐330 000 GHz, ε_r = ~10.5 and τ_f = ~?40 ppm/°C were obtained for Li₂Mg₃SnO₆ ceramics with x = 2‐5 as sintered at ~1150°C. For LTCC applications, a desirable Q × f value of ~133 000 GHz could be achieved in samples with x = 3‐4 as sintered at 875°C.     

Increased electrical conductivity and the mechanism of samarium‐doped ceria/Al2O3 nanocomposite electrolyte

To further enhance the electrical conductivity of doped ceria, the samarium‐doped ceria (SDC)/Al₂O₃ nanocomposites were prepared through sintering the coprecipitated powders in 1100°C‐1300°C. The grain sizes of all composites are less than 100 nm and decrease with alumina addition. Besides the main phases of SDC and Al₂O₃, the SmAlO₃ can precipitate in the composites if sintered at higher temperatures or for longer dwell time. The deviations of SDC diffraction peak positions demonstrate the solid solution of alumina into SDC lattice. The total electrical conductivities of the composites increase with alumina content until 30% alumina is added. The SDC/30%Al₂O₃ presents the higher total conductivity than the pure SDC by about five times. Specifically, the grain interior conductivity generally decreases with the alumina addition while the grain‐boundary conductivity increases with that. The introduction of the conductive SDC/Al₂O₃ interface can contribute to the rise of total conductivity, yet the excessive alumina addition also blocks the oxygen ion conduction. The SmAlO₃ precipitation is detrimental to the ion conduction for it consumes part of alumina and leads to the decrement in Sm concentration of SDC grain. Appropriate alumina addition not only enhances the conductivity of SDC but also lowers the material cost.     

Determination of Chemical Tracer Diffusion Coefficients for the La‐ and Ni‐site in La2NiO4+δ Studied by SIMS

Chemical (impurity) tracer diffusion of Pr, Nd, and Co into polycrystalline La₂NiO_4+δ was done at 950°C–1350°C in air, argon, and intermediate pO₂ (5.5 × 10^?3 atm O₂), and diffusion coefficients were extracted from depth profiles determined by Secondary Ion Mass Spectrometry (SIMS). The Pr and Nd profiles have only one broad region, corresponding to bulk diffusion, whereas the Co tracer depth profile has two distinct regions with different slopes, where the outer shallow region represents bulk diffusion and the inner region with deep penetration depths represents grain‐boundary diffusion. It is thus concluded that the diffusivity on the Ni‐site is enhanced by grain‐boundary diffusion. The bulk diffusion was evaluated using the solution of Fick's second law for thin‐film source, and the grain‐boundary diffusion was evaluated according to Whipple‐Le Claire's equation. The average apparent activation energies for Pr and Nd bulk diffusion are 165 ± 15 kJ/mol, for Co bulk diffusion 295 ± 15 kJ/mol, and for Co grain‐boundary diffusion 380 ± 20 kJ/mol. Qualitatively, the diffusivities and activation energies follow levels and trends in agreement with those from other experimental techniques. The apparent lack of—in fact reverse—correlation between activation energy and level of diffusivity is discussed in terms of a possibility that the faster species (Ni) reach equilibrium defect concentrations while the slower (La) is in effect frozen in.     

Migration of Potassium in an Fe2O3/H‐ZSM‐5 Composite Catalyst

The migration of potassium in an iron/H‐ZSM‐5 bifunctional system was investigated by pressing K/Fe₂O₃ and H‐ZSM‐5 in a pellet using 2 t of pressure. These pellets were heated at 350 °C in air for a number of days. Migration of potassium was visualized using energy‐dispersive X‐ray profiling. The distribution of potassium in the Fe₂O₃ phase and the H‐ZSM‐5 phase was approximately constant, with a step change over the phase boundary. The step change varied as a function of the heating time. The amount of potassium migrated from the Fe₂O₃ phase to the H‐ZSM‐5 phase was quantified using NH₃‐TPD. It is shown that an equilibrium distribution between potassium in the Fe₂O₃ phase and the H‐ZSM‐5 phase is obtained after ca. 7 days of heating.     

Microwave dielectric properties of SnO‐SnF2‐P2O5 glass and its composite with alumina for ULTCC applications

Ultralow‐temperature sinterable alumina‐45SnF₂:25SnO:30P₂O₅ glass (Al₂O₃‐SSP glass) composite has been developed for microelectronic applications. The 45SnF₂:25SnO:30P₂O₅ glass prepared by melt quenching from 450°C has a low T_g of about 93°C. The SSP glass has ε_r and tanδ of 20 and 0.007, respectively, at 1 MHz. In the microwave frequency range, it has ε_r=16 and Q_u × f=990 GHz with τ_f=?290 ppm/°C at 6.2 GHz with coefficient of thermal expansion (CTE) value of 17.8 ppm/°C. A 30 wt.% Al₂O₃ ‐ 70 wt.% SSP composite was prepared by sintering at different temperatures from 150°C to 400°C. The crystalline phases and dielectric properties vary with sintering temperature. The alumina‐SSP composite sintered at 200°C has ε_r=5.41 with a tanδ of 0.01 (1 MHz) and at microwave frequencies it has ε_r=5.20 at 11 GHz with Q_u × f=5500 GHz with temperature coefficient of resonant frequency (τ_f)=?18 ppm/°C. The CTE and room‐temperature thermal conductivity of the composite sintered at 200°C are 8.7 ppm/°C and 0.47 W/m/K, respectively. The new composite has a low sintering temperature and is a possible candidate for ultralow‐temperature cofired ceramics applications.     

Fabrication of Gd2O3‐MgO nanocomposite optical ceramics with varied crystallographic modifications of Gd2O3 constituent

The fabrication of Gd₂O₃‐MgO nanocomposite optical ceramics via hot‐pressing using sol‐gel derived cubic‐Gd₂O₃ and MgO nanopowders was investigated. The precursor powder calcined at 600°C had an average particle size of 12 nm. The effects of hot‐pressing temperature on constituent phases, microstructure, mid‐infrared transmittance, and microhardness were studied. The crystallographic modifications of Gd₂O₃ phase varied with the increase in sintering temperature from 1250 to 1350°C. The monoclinic‐Gd₂O₃ phase was retained for the composite sintered at 1350°C and the sample had an average grain size of 90 nm, excellent transmission (80.4%‐84.8%) over 3‐6 μm wavelength range, and enhanced hardness value of 14.1 GPa.     

Transparent polycrystalline nanoceramics consisting of triclinic Al2SiO5 kyanite and Al2O3 corundum

Transparent polycrystalline nanoceramics consisting of triclinic Al₂SiO₅ kyanite (91.4 vol%) and Al₂O₃ corundum (8.6 vol%) were fabricated at 10 GPa and 1200‐1400°C. These materials were obtained by direct conversion from Al₂O₃‐SiO₂ glasses fabricated using the aerodynamic levitation technique. The material obtained at 10 GPa and 1200°C shows the highest optical transparency with a real in‐line transmission value of 78% at a wavelength of 645 nm and a sample‐thickness of 0.8 mm. This sample shows equigranular texture with an average grain size of 34 ± 13 nm. The optical transparency increases with decreasing mean grain size of the constituent phases. The relationship between real in‐line transmission and grain size is well explained by a grain‐boundary scattering model based on a classical theory.     

Varistor and Magnetic Properties of Nickel Copper Zinc Niobium Ferrite Doped with Bi2O3

Bi₂O₃ was added into nickel copper zinc niobium ferrite and treated with different thermal processes to change the grain‐boundary chemical composition. The relationship between the grain‐boundary composition and varistor properties were investigated using scanning electron microscopy, transmission electron microscopy, energy dispersion spectroscopy, and X‐ray photoelectric spectroscopy. The experimental results show that Bi₂O₃ reacts and diffuses into the spinel ferrite grain, forming bismuth iron compounds, causing the spinel ferrite chemical composition near grain boundary becomes iron deficient. The Fe deficiency spinel ferrite near the grain boundary then changes into p‐type conduction. The annealing process after sintering improves the bismuth oxide diffusion and chemical reaction near the grain boundary, which can increase the grain‐boundary resistivity. The n‐type semiconductive grain interior and p‐type spinel ferrite near the grain‐boundary combination can form a double Schottky barrier, leading the specimen to exhibit varistor properties. A multifunctional varistor‐magnetic material with a nonlinear coefficient of 10 and initial permeability of about 225 at 10 MHz can be successfully fabricated by sinteringNi_0.2881Cu_0.1825Zn_0.4802Nb_0.0096Fe_2.0168O₄ ferrites added with 5 mol% Bi₂O₃ sintered at 950°C, then annealed at 650°C for 1 h.