共查询到19条相似文献,搜索用时 54 毫秒
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硅纳米晶非挥发存储器由于其卓越的性能以及与传统工艺的高度兼容性,近来引起高度关注。采用两步低压化学气相淀积(LPCVD)生长方式制备硅纳米晶(Si-NC),该方法所制备的硅纳米晶具有密度高、可控性好的特点,且完全兼容于传统CMOS工艺。在此基础上制作四端硅纳米晶非挥发存储器,该器件展示出良好的存储特性,包括10 V操作电压下快速地擦写,数据保持特性的显著提高,以及在105次擦写周期以后阈值电压(Vt)飘移低于10%的良好耐受性。该器件在未来高性能非挥发存储器应用上极具潜质。 相似文献
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An Ultrafast Nonvolatile Memory with Low Operation Voltage for High-Speed and Low-Power Applications
Zhi-Cheng Zhang Yuan Li Jiaqiang Li Xu-Dong Chen Bei-Wei Yao Mei-Xi Yu Tong-Bu Lu Jin Zhang 《Advanced functional materials》2021,31(28):2102571
Memory plays a vital role in modern information society. High-speed and low-power nonvolatile memory is urgently demanded in the era of big data. However, ultrafast nonvolatile memory with nanosecond-timescale operation speed and long-term retention is still unavailable. Herein, an ultrafast nonvolatile memory based on van der Waals heterostructure is proposed, where a charge-trapping material, graphdiyne (GDY), serves as the charge-trapping layer. With the band-engineered heterostructure and excellent charge-trapping capability of GDY, charges are directly injected into the GDY layer and are persistently captured by the trapping sites in GDY, which result in an ultrafast writing speed (8 ns), a low operation voltage (30 mV), and a long retention time (over 104 s). Moreover, a high on/off ratio of 106 is demonstrated by this memory, which enables the achievement of multibit storage with 6 discrete storage levels. This device fills the blank of ultrafast nonvolatile memory technology, which makes it a promising candidate for next-generation high-speed and low-power-consumption nonvolatile memory. 相似文献
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随着非挥发性存储器件的尺寸持续缩小,SONOS结构存储器件又重新被重视.简单介绍超短栅长SONOS器件和2 bit SONOS器件,重点介绍改进氮化硅层和应用high-K材料,来改善SONOS器件性能的研究.认为只要解决high-K材料在非挥发性存储器件中的应用,具有好的发展前景. 相似文献
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An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO_2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. 相似文献
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High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor 下载免费PDF全文
Flexible floating‐gate organic transistor memory (FGOTM) is a potential candidate for emerging memory technologies. Unfortunately, conventional planar FGOTM suffers from weak driving ability and insufficient mechanical flexibility, which limits its commercial application. In this work, a novel flexible vertical FGOTM (VFGOTM) is reported. Benefitting from new vertical architecture, VFGOTM provides ultrashort channel length to afford an extremely high current density. Meanwhile, VFGOTM devices exhibit excellent memory performance and outstanding retention property. The memory properties of VFGOTM devices are comparable or even better than traditional planar FGOTM and much better than the reported organic nonvolatile memory with vertical transistor structures. More importantly, organic nonvolatile memory with vertical transistor structures is investigated for the first time on a flexible substrate. The results show that VFGOTM architecture allows vertical current flow across the channel layer to effectively eliminate the effect of mechanical bending during current transport, which significantly improves the mechanical stability of the flexible VFGOTM. Hence, with a combination of excellent driving ability, memory performance, and mechanical stability, VFGOTM devices meet the practical requirements for high performance memory applications, which have great potential for the application in a wide range of flexible and wearable electronics. 相似文献
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Jonghyeon Yun Hyeonhee Roh Jieun Choi Dongyeop Gu Daewon Kim 《Advanced functional materials》2021,31(28):2102536
With the rapid advancement of the Internet of things (IoT), security issues of the IoT are emerging because the wireless networks for conventional IoT are easily exposed to hacking. By storing the critical data in a physically separate space, these issues can be suppressed. The nonvolatile memory (NVM) is an attractive solution because the stored data are not erased even after turning off the power. However, the NVM consumes the power for operating and remaining data are exposed to attack. Hence, NVM with high security and low power operation is highly required for IoT platforms. Herein, a disk triboelectric nanogenerator-based NVM (DTNVM) is developed. The DTNVM can be operated with low power because the reading process of stored data is conducted with triboelectricity. Since the ternary system is adopted, 23 to 119 trits can be stored at the DTNVM by changing the sampling time. The identification information is stored at the DTNVM and 91.3% of consistency of the data with a range of 10% tolerance is recorded as result of the reading. Based on the result, the DTNVM is expected to be utilized in the near future as a next-generation NVM and for safe identification systems at the IoT. 相似文献
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Yichu Zheng Axel Fischer Michael Sawatzki Duy Hai Doan Matthias Liero Annegret Glitzky Sebastian Reineke Stefan C. B. Mannsfeld 《Advanced functional materials》2020,30(4)
In recent decades, organic memory devices have been researched intensely and they can, among other application scenarios, play an important role in the vision of an internet of things. Most studies concentrate on storing charges in electronic traps or nanoparticles while memory types where the information is stored in the local charge up of an integrated capacitance and presented by capacitance received far less attention. Here, a new type of programmable organic capacitive memory called p‐i‐n‐metal‐oxide‐semiconductor (pinMOS) memory is demonstrated with the possibility to store multiple states. Another attractive property is that this simple, diode‐based pinMOS memory can be written as well as read electrically and optically. The pinMOS memory device shows excellent repeatability, an endurance of more than 104 write‐read‐erase‐read cycles, and currently already over 24 h retention time. The working mechanism of the pinMOS memory under dynamic and steady‐state operations is investigated to identify further optimization steps. The results reveal that the pinMOS memory principle is promising as a reliable capacitive memory device for future applications in electronic and photonic circuits like in neuromorphic computing or visual memory systems. 相似文献
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Kun Zhai Da‐Shan Shang Yi‐Sheng Chai Gang Li Jian‐Wang Cai Bao‐Gen Shen Young Sun 《Advanced functional materials》2018,28(9)
The cross‐coupling between electric polarization and magnetization in multiferroic materials provides a great potential for creating next‐generation memory devices. Current studies on magnetoelectric (ME) applications mainly focus on ferromagnetic/ferroelectric heterostructures because single‐phase multiferroics with strong magnetoelectric coupling at room temperature are still very rare. Here a type of nonvolatile memory device is presented solely based on a single‐phase multiferroic hexaferrite Sr3Co2Fe24O41 which exhibits nonlinear magnetoelectric effects at room temperature. The principle is to store binary information by employing the states (magnitude and sign) of the first‐order and the second‐order magnetoelectric coefficients (α and β), instead of using magnetization, electric polarization, and resistance. The experiments demonstrate repeatable nonvolatile switch of α and β by applying pulsed electric fields at room temperature, respectively. Such kind of memory device using single‐phase multiferroics paves a pathway toward practical applications of spin‐driven multiferroics. 相似文献
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Siyuan Wan Yue Li Wei Li Xiaoyu Mao Chen Wang Chen Chen Jiyu Dong Anmin Nie Jianyong Xiang Zhongyuan Liu Wenguang Zhu Hualing Zeng 《Advanced functional materials》2019,29(20)
High‐density memory is integral in solid‐state electronics. 2D ferroelectrics offer a new platform for developing ultrathin electronic devices with nonvolatile functionality. Recent experiments on layered α‐In2Se3 confirm its room‐temperature out‐of‐plane ferroelectricity under ambient conditions. Here, a nonvolatile memory effect in a hybrid 2D ferroelectric field‐effect transistor (FeFET) made of ultrathin α‐In2Se3 and graphene is demonstrated. The resistance of the graphene channel in the FeFET is effectively controllable and retentive due to the electrostatic doping, which stems from the electric polarization of the ferroelectric α‐In2Se3. The electronic logic bit can be represented and stored with different orientations of electric dipoles in the top‐gate ferroelectric. The 2D FeFET can be randomly rewritten over more than 105 cycles without losing the nonvolatility. The approach demonstrates a prototype of rewritable nonvolatile memory with ferroelectricity in van der Waals 2D materials. 相似文献