垂直Bridgman法生长CaF2单晶传热过程的数值分析

采用有限元法对大尺寸氟化钙单晶的生长过程进行了传热分析,准稳态模型简化模拟计算过程.研究了梯度区不同的温度梯度对界面形状和晶体生长速度的影响,讨论了辐射传热对晶体生长过程传热的影响.研究表明:晶体生长过程中界面凸度发生变化;晶体生长速率与坩埚下降速率不一致;25 K/cm为合适的梯度区温度梯度;晶体内部辐射传热对单晶生长传热过程有重要影响.计算结果表明,3个时期的固相等温线的曲率小于液相的.根据数值模拟结果进行了晶体生长实验,生长出的晶体完整,透明,无宏观缺陷.     

多孔介质冻结过程中温度变化的数值模拟

多数对多孔介质冻结过程的研究是建立模型借助于计算机技术给定数值解。笔者在借鉴现有数值模型的基础上，考虑多孔介质的内部特点，采用容积平均法建立数学模型，对无限大平板状多孔介质在第三类边界条件下发生的一维冻结过程中温度变化进行分析并加以实验验证。     

非饱和多孔介质动力应变局部变化数值模拟

在已有研究工作基础上对非饱和多孔介质应变局部化问题进行研究,给出非饱和多孔介质的分析控制方程,其中饱和度与毛细压力关系由实验给出。采取适用于非饱和砂土的改进的广义塑性本构模型对应局部变化过程进行数值模拟,给出了试件应变局部化发展过程以及孔隙压力的变化规律。对初始饱和土中所产生非饱和剪切带进行计算的结果表明,采用非饱和模型较饱和模型将获得更为合理的结果。     

垂直布里奇曼法CdZnTe晶体生长过程的数值分析

模拟计算了半导体材料CdZnTe布里奇曼法单晶体生长过程，分析了熔体的过热温度、坩埚侧面强化换热以及坩埚加速旋转(ACRT)等因素对结晶界面的形态和晶体组分偏析的影响。结果表明：当熔体的过热温度减小时，熔体中自然对流的强度显著降低，固液界面的凹陷深度有所增加，晶体的轴向等浓度区显著加长，而晶体组分的径向偏析明显增大，坩埚的侧面强化换热增加了自然对流强度，也增大了固液界面的凹陷，但是对溶质成分的偏析影响较小，坩埚加速旋转引起的强迫对流强度远大于自然对流，显著增大了固液界面的凹陷，使熔体中的溶质分布成为均一的浓度场，显著减小了晶体组分的径向偏析，增加了晶体组分的轴向偏析。     

垂直布里奇曼法生长CdZnTe晶体的径向溶质偏析之有限元分析法模拟

运用有限元分析软件Comsol Multiphys-ics,结合晶体生长固液界面曲率分析法,模拟了垂直布里奇曼法生长Cd0.9Zn0.1Te（CZT）晶体。研究了固液界面处曲率变化对于溶质径向偏析的影响,揭示了界面曲率与溶质偏析的内在关联性,并计算了数值。分析了3种晶体生长方式：（1）坩埚匀速生长;（2）两阶段坩埚变速生长;（3）坩埚回熔生长分别对于溶质偏析的影响。采用扫描电子显微镜SEM中的能谱仪EDX测量3种工艺的Zn组分分布：（1）模拟值比对实验结果发现可以运用固液界面的曲率平均值来推算溶质径向组分偏差的大小;（2）模拟推算的溶质径向偏差值更加接近于实验所得的溶质组分偏差最大值;（3）坩埚回熔生长法生长晶体的固液界面的波动性小,界面稳定性最好,溶质径向组分偏差也最小。     

以有限元分析法对CdZnTe晶体的垂直布里奇曼法生长的组分过冷模拟计算

本文采用有限元分析法,应用软件COMSOL,对Cd0.9Zn0.1Te (CZT)晶体垂直布里奇曼生长法进行模拟计算.为了研究固液界面过冷度的影响,通过改进传统的晶体生长模型只考虑热传导和热对流,加上了固液界面前沿过冷度的计算模型,组分过冷临界边界条件约束模型,研究分析了不同温度梯度和生长速率生长CZT晶体的曲率过冷度...     

多孔泡沫金属填充的通道型正压标准漏孔漏率的数值模拟北大核心CSCD

针对同类通道型正压标准漏孔在不同工况下漏率的机理问题,将多孔泡沫金属填充于通道型正压标准漏孔中并建立数学模型。采用数值模拟的方法分别分析了不同工况条件下对通道型正压标准漏孔漏率的影响,同时给出泡沫金属内部速度场分布。结果表明,在恒定的气源压力下,与Air、He以及D2相比,H2获得的漏率最大;漏孔的漏率随气源压力的增大而增大;对于恒定的孔径或孔隙率条件下,通道型正压标准漏孔的漏率随着孔径或孔隙率的增大而增大,随通道型正压标准漏孔长度的增加而降低;非线性变化孔隙率能够有效改善并控制漏率的大小。该项研究对正压标准漏孔的生产和发展、计量方面的检漏工作,以及控制漏率来优化和设计密封系统性能方面提供了有价值的参考意义。     

率相关饱和多孔介质动力响应的数值分析

在基于混合物理论的多孔介质模型的基础上,将固体相视为弹粘塑性体,建立了饱和多孔介质的弹粘塑性模型。模型的基本思想是在无粘弹塑性本构关系中引入-时间参数,使固体骨架具备了粘性效应。利用Galerkin加权残值法推导得到了罚有限元格式,并采用Newmark预估校正法求解率相关饱和多孔介质的非线性有限元动力方程,此算法可以很...     

饱和多孔介质动力分析的数值流形单元

基于数值流形方法中覆盖函数的基本思想,构造了适用于饱和多孔介质动力耦合分析的三节点平面流形单元,该单元满足Babuska-Brezzi稳定性准则与Zienkiewicz-Taylor分片试验条件,对于位移和孔隙压力具有不等阶的插值函数,且所有节点上具有相同自由度。用标准Galerkin法和Newmark法将饱和多孔介质动力基本方程在空间和时间上离散,得到饱和多孔介质动力分析的流形元离散的算法公式。数值结果表明,与传统有限元相比在孔隙流体不可压缩且非渗流的条件下,数值流形单元对于压力场的计算具有良好的数值稳定性。     

线性透气度流量盘的数值模拟

为探讨线性透气度流量盘的流量随温度或压力变化的性能,进行了三维数值模拟研究.首先采用OGP光学测量仪测量线性流量盘的几何参数,测量统计出流量盘内填充颗粒的平均粒径.然后通过理论计算多孔介质重要参数,选用Ergun方程描述多孔介质内部流场.接着将标准工况下的数值模拟结果与实验结果进行比对,以验证数值模拟准确性.最后考虑了压力降以及环境条件改变对出口体积流量的影响.研究结果表明,流量盘前后压差变化时,压差与流量盘的出口体积流量符合线性关系.流量盘流量随环境温度或大气压的升高而降低,两者关系也呈现明显的线性.环境压力对流量的影响有限,一般可忽略不计.     

Current simulation of symmetric contacts on CdTe

This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.     

Characterization of charge collection in CdTe and CZT using the transient current technique

The charge collection properties of Cadmium–Telluride (CdTe) and Cadmium–Zinc–Telluride (CZT) in comparison with Silicon (Si) are presented using the transient-current technique (TCT) where the current pulses are generated by -particles emitted from an ²⁴¹Am source. From the recorded current pulse shapes, the charge collection efficiency, the charge carrier mobility and the electric field distribution inside the detectors are extracted. In particular, the signals of the compound semiconductors CdTe and CZT are interpreted with respect to the build-up of space–charges in the sensor volume and the subsequent deformation of the electric field. As high-quality CdTe and CZT samples are now commercially available, the knowledge of these material characteristics is of outmost importance for the application of CdTe and CZT in X-ray imaging.

In addition, the paper describes the influence of Ohmic and Schottky contacts on the current pulses in CdTe as well as the effects of polarization, i.e. the time-dependent degradation of the detector signals due to the accumulation of fixed charges within the sensor.     

Synthesis and single crystal growth of gallium phosphide by the liquid encapsulated vertical Bridgman technique

Gallium phosphide is a typical III–V compound semiconductor and is also an important electronic material. The synthesis and single crystal growth of this compound by melt methods is rendered very difficult because of the large phosphorus vapour pressure. A high pressure vessel with internal heating and a quartz reactor was first developed for the direct synthesis of gallium phosphide. The crystal growth was carried out in a second high pressure chamber rated for 100 bars gas pressure and equipped with the paraphernalia for crystal growth. Single crystals of gallium phosphide were grown from the polycrystalline starting material by the vertical Bridgman method and the vapour pressure problem was overcome by encapsulating the melt in a column of molten boric oxide. Both boron nitride and silica were employed as crucibles, and with the former, single crystal rods of 8–10 mm diameter and 10–15 mm length were obtained.     

荧光CdTe量子点和CdTe／SiO2纳米粒子的制备与表征

采用巯基乙酸为稳定剂，在水相中直接合成了不同荧光发射波长的CdTe量子点（QDs），在此基础上，采用反相微乳法对所获得的QDs进行硅烷化处理，得到大小均一、水溶性好的CdTe／SiO2纳米粒子，为该材料的进一步生物应用奠定了良好的基础。     

用大面积CdTe多晶薄膜制备太阳电池

在制备有SnO2:F透明导电膜和CdS的衬底上,用自行设计的设备,通过调节加热灯管的分布获得了较均匀分布的温场,制备了300 mm×400 mm的大面积多晶CdTe薄膜.经XRD和AFM分析,制备的CdTe多晶薄膜均匀致密,呈(111)择优取向.将薄膜分成小块,做成结构为CdS/CdTe/ZnTe/ZnTe:Cu的小面积太阳电池.经测试,薄膜各部分的制作的电池性能相近.     

Convection during the vertical Bridgman growth of Hg1−xCdxTe

Two different structures, obtained with specific growth parameters, in Hg_1–x Cd _x Te single crystals synthesized by the vertical Bridgman technique, are shown. A structure (small vertical line-shaped defects) located in the central part of the charge along the growth axis can be ascribed to convection induced by melt–solid interface curvature. The other structure, obtained in the first-to-freeze region of the ingot, when the temperature of the cold zone of the furnace is constant and a few degrees lower than the solidification one, can be ascribed to the convection rolls frozen in the solid matrix.     

Dynamics of native oxide growth on CdTe and CdZnTe X-ray and gamma-ray detectors

We studied the growth of the surface oxide layer on four different CdTe and CdZnTe X-ray and gamma-ray detector-grade samples using spectroscopic ellipsometry. We observed gradual oxidization of CdTe and CdZnTe after chemical etching in bromine solutions. From X-ray photoelectron spectroscopy measurements, we found that the oxide consists only of oxygen bound to tellurium. We applied a refined theoretical model of the surface layer to evaluate the spectroscopic ellipsometry measurements. In this way we studied the dynamics and growth rate of the oxide layer within a month after chemical etching of the samples. We observed two phases in the evolution of the oxide layer on all studied samples. A rapid growth was visible within five days after the chemical treatment followed by semi-saturation and a decrease in the growth rate after the first week. After one month all the samples showed an oxide layer about 3 nm thick. The oxide thickness was correlated with leakage current degradation with time after surface preparation.     

CdTe/CdMnTe多量子阱的生长和激子复合动力学性质的研究

用分子束外延在GaAs衬底上生长了CdTe/Cd0.8Mn0.2Te多量子 结构,利用X射线衍射（XRD）、低激发密度下的PL光谱和变密度激发的ps时间分辨光谱研究了CdTe/CdMnTe多量子阱的结构和激子复合特性。在变密度激发的ps时间分辨光谱中,发现不同激发密度下发光衰减时间不同,认为它的机理可能是无辐射复合引起的。