Deposition of carbon nitride films by filtered cathodic vacuum arc combined with radio frequency ion beam source

Atomically smooth carbon nitride films were deposited by an off-plane double bend filtered cathodic vacuum arc (FCVA) technique. A radio frequency nitrogen ion source was used to supply active nitrogen species during the deposition of carbon nitride films. The films were characterized by atomic force microscopy (AFM), XPS and Raman spectroscopy. The internal stress was measured by the substrate bending method. The influence of nitrogen ion energy (0–1000 eV) on the composition, structure and properties of the carbon nitride films was studied. The nitrogen ion source greatly improves the incorporation of nitrogen in the films. The ratio of N/C atoms in the films increases to 0.40 with an increase in the ion beam energy to 100 eV. Further increase in the ion beam energy leads to a slight decrease in the N/C ratio. XPS results show that nitrogen atoms in the films are chemically bonded to carbon atoms as C---N, C=N, and CN bonds, but most of nitrogen atoms are bonded to sp² carbon. The increase in nitrogen ion energy leads to a decrease in the content of nitrogen atoms bonded to sp² carbon, and an increase in the content of nitrogen atoms bonded to sp³ and sp¹ carbon. Raman spectra indicate an increase in the sp² carbon phase in carbon nitride films with an increase in nitrogen ion energy. The increase in sp² carbon fraction is attributed to the decrease in internal stress with increasing nitrogen ion energy.     

Energy dependent structure changes in ion beam deposited a-C:H

The present study investigates the effect of ion energy in the form of acceleration potential on the structure of ion beam deposited a-C:H films using Raman spectroscopy, FTIR spectroscopy and profilometry. The results indicate that for low acceleration potentials (100–200 V), the sp² fraction of the film becomes more ordered as the acceleration potential increases. However, FTIR indicates that the hydrogen bonding in the film is unaffected. For mid-range acceleration potentials (200–800 V) the film structure remains stable, then, as the acceleration potential is increased above 800 V there is a further increase in the order of the sp² fraction in the films and a change in the hydrogen bonding in the film. These structure changes suggest that two separate energy dependent processes effect the structure of IBD a-C:H; a densification/relaxation process at low acceleration potentials and ion damage/sputtering processes at higher acceleration potentials.     

Evaluation of diamond films by nuclear magnetic resonance and Raman spectroscopy

The quality of chemically vapor deposited diamond films was assessed in terms of sp²/sp³ content as determined by solid-state nuclear magnetic resonance (NMR) and Raman spectroscopy. While the results of the two techniques are in qualitative agreement, only the NMR spectra yield quantitative values for the sp²/sp³ ratio. Only sp³ carbon was observed in the NMR spectra of very high quality hot-filament, microwave plasma, and d.c. arc-jet chemically vapor deposited films. As expected, Raman spectroscopy is extremely sensitive to sp² bonded carbon, identifying small amounts below the detection limit of the NMR spectrometer. Comparison of the two techniques, however, indicates that Raman spectroscopy may be so sensitive to sp² bonded carbon that sp³ bonded carbon in films containing as much as 90% sp³ bonded material may remain undetected. NMR linewidths indicate that the sp³ carbon in such material shows more disorder than that found in high-quality polycrystalline films.     

Near-edge X-ray absorption fine structure spectroscopy of arcjet-deposited cubic boron nitride

Near-edge X-ray absorption fine structure (NEXAFS) spectroscopy was employed to help determine the structure of boron nitride films grown by bias-enhanced chemical vapor deposition in a low-density supersonic arcjet flow. BN films containing 0.90% cubic boron nitride were analyzed by NEXAFS and compared with c-BN and h-BN reference spectra. The mainly cubic films have been shown previously to be nanocrystalline, which leads to the inability to obtain structural information from Raman scattering spectra. However, with NEXAFS, the nanocrystalline nature of the films does not strongly affect the structural interpretation. It is shown that films deposited with a bias of −75 V are primarily sp³ bonded. This high sp³ bonding character agrees with previous measrements based on infraredtransmission and reflectance spectroscopy, as well as X-ray photoelectron spectroscopy.     

Synthesis of nanocrystalline nitrogen-rich carbon nitride powders at high pressure

Nitrogen-rich carbon nitride powders with composition close to C₄N_2.8–3.3 were synthesized by using a chemical reaction between sodium azide and hexachlorobenzene under high pressure (7.7 GPa) and a temperature of 500 °C for 30 min. The final black powders were relatively hard materials with high resistance to hot acids and common organic solvents. Analytical electron microscopy and X-ray diffraction studies showed that the powders are predominantly amorphous, containing nanometer-sized crystallites. Carbon and nitrogen K-edge structures obtained by electron energy-loss spectroscopy suggest the existence of chemical bonding between C and N, and that the amorphous carbon nitride matrix is primarily sp²-bonded. Raman and infrared features of the carbon nitride powders closely resemble those in carbon and diamond-like films and also characterize the powders as strongly disordered, sp²-bonded carbon nitride exhibiting graphite-like microdomains with dimensions of approximately 1 nm.     

Characterization of d.c.jet CVD diamond films on molybdenum

Diamond films grown using a thermal plasma technique are characterized using a variety of techniques. The relationships between the chemistry, morphology, and mechanical properties are explored using microscopy, Raman spectroscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. The characteristics of films grown using two different nucleation enhancement techniques are shown. Films grown using high methane concentrations at the beginning of growth produce large grained columnar films, whereas films grown on substrates which have been treated with a diamond polishing step show nanocrystalline structures. Variations in sp³ and sp² bonding and peak shifts are tracked through the thickness of the film, corresponding to variations in the methane concentration during growth. Stresses are measured using peak shifts and beam bending techniques. Adhesion is tested using indentations, and is shown to increase both as growth temperatures and surface roughness increase.     

Characterization of diamond-like carbon films before and after heavy energetic ion implantations

Hydrogenated diamond-like carbon films were implanted by 110 keV Fe⁺ at doses ranging from 1 × 10¹³ to 5 × 10¹⁶ ions cm⁻². The film resistivities and the infra-red transmittances of the specimens were determined as functions of the implanted doses. Raman spectra and the infra-red transmittances of the film layers were used to characterize the structural changes of the implanted films. It was found that, when the implantation dose was higher than about 5 × 10¹⁴ or 1 × 10¹⁵ ions cm⁻², the film resistivity and the total infra-red transmittance of the specimens decreased significantly. However, when the dose was smaller than this value, the resistivity decreased firstly and then increased with dose and the measured values were higher than those of corresponding as-grown ones. The infra-red transmittance of the specimens was also improved to some extent under the lower dose range. By using structural characterization results, especially the infra-red transmittances of the film layers, we conclude that the electrical and optical property changes at doses higher than about 5 × 10¹⁴ or 1 × 10¹⁵ ions cm⁻² were due to the following changes, i.e., the decrease in the population of both sp² C-H and sp³ C-H bonds (compared with that of sp³ C-H bonds, the decrease in speed of sp² C-H bonds is smaller), the decrease of bond-angle disorder and the increased population of sp² C-C bonds. However, at doses between 1 × 10¹⁴ and 5 × 10¹⁴ or 1 × 10¹⁵ ions cm⁻², the implantation induced increase of C-H bonds was responsible for the observed property changes. Compared with the previous reports, the novelty of the present work is: the IR transmittance curves of the single film layers give us direct evidence for the changes of different C-H bonds with increasing ion dose and thus proved the transformation mechanism proposed previously.     

Evolution of the opto-electronic properties of amorphous carbon films as a function of nitrogen incorporation

The present work provides correlations between the optical, electronical and microstructural properties of amorphous carbon nitride films (a-CN_x) deposited by Direct Current (DC) magnetron sputtering technique versus the N₂/Ar + N₂ ratio. The microstructure of the films was characterized by Raman spectroscopy and optical transmission measurements. The evolution of both the density of states (DOS) located between the bandtail states and the density of states around the Fermi level N(E_f), have been investigated by electrical measurements versus temperature varying the N₂/Ar + N₂ ratio. The evolution of the microstructure versus N reveals a continuous structural ordering of the sp² phase, which is confirmed by the optical and the conductivity measurements. The conductivity variation was interpreted within the framework of the band structure model of the π electrons in a disordered carbon with the presence of localized states.     

Carbon nitride layers created by laser deposition combined with RF discharge

The structure, composition and bonding of carbon nitride films created by pulsed laser deposition in combination with radio-frequency discharge for nitrogen activation were studied by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) and by Raman spectroscopy for various deposition conditions. XPS measurements revealed a maximum N/C of ∼0.5 and an increased number of N-sp³C bonds for lower N/C values. FTIR and Raman spectra indicate the presence of a polymeric phase.     

XPS studies of amorphous SiCN thin films prepared by nitrogen ion-assisted pulsed-laser deposition of SiC target

Amorphous SiCN films were prepared on Si (100) substrates by nitrogen ion-assisted pulsed-laser ablation of an SiC target. The dependence of the formed chemical bonds in the films on nitrogen ion energy and the substrate temperature was investigated by an X-ray photoelectron spectroscopy (XPS). The fractions of sp² CC, sp³ CC, and sp² CN bonds decreased, and that of NSi bonds increased when the nitrogen ion energy was increased without heating during the film preparation. The fraction of sp³ CN bonds was not changed by the nitrogen ion irradiation below 200 eV. Si atoms displaced carbon atoms in the films and the sp³ bonding network was made between carbon and silicon through nitrogen. This tendency was remarkable in the films prepared under substrate heating, and the fraction of sp³ CN bonds also decreased when the nitrogen ion energy was increased. Under the impact of high-energy ions or substrate heating, the films consisted of sp² CC bonds and SiN bonds, and the formation of sp³ CN bonds was difficult.     

Dependence of the composition and bonding structure of carbon nitride films deposited by direct current plasma assisted pulsed laser ablation on the deposition temperature

Carbon nitride films were deposited by direct current plasma assisted pulsed laser ablation of a graphite target under nitrogen atmosphere. Atomic force microscopy (AFM), Fourier transform infrared (FTIR), Raman, and X-ray photoelectron spectroscopy (XPS) were used to characterize the surface morphology, bonding structure, and composition of the deposited films. The influence of deposition temperature in the range 25–400 °C on the composition and bonding structure of carbon nitride films was systematically studied. AFM images show that surface roughness and cluster size increase monotonically with deposition temperature. XPS, FTIR, and Raman spectra indicate directly the existence of CN, CN, and CN bonds in the deposited films. The increase of deposition temperature results in a drastic decrease in the N/C ratio, the content of CN bond and N atoms bonded to sp³ C atoms, in addition to the increase in the content of disorder sp² C atoms and N atoms bonded to sp² C atoms in the deposited films. Raman spectra show that the intensity ratio of D peak over G peak increases with increasing deposition temperature to 200 °C, then decreases with the further increase of deposition temperature, which results from the continuous growth of sp² cluster in the films.     

Effect of microwave power on diamond-like carbon films deposited using electron cyclotron resonance chemical vapor deposition

Diamond-like carbon (DLC) films have been deposited using electron cyclotron resonance chemical vapor deposition (ECR-CVD) under various microwave power conditions. Langmuir probe measurement and optical emission spectroscopy (OES) were used to characterize the ECR plasma, while the films were characterized using Raman and infrared (IR) spectroscopies, hardness and optical gap measurements. It was found that the ion density and all signal peaks in the optical emission (OE) spectra increased monotonously following the increase in microwave power. Raman spectra and optical gap measurements indicate that the films become more graphitic with lower content of sp³-hybridized carbon atoms as the microwave power was increased. IR and hardness measurements indicate a reduction in hydrogen content and decrease in hardness for the film produced at relatively high microwave powers. A deposition mechanism is described which involved the ion bombardment of film surfaces and hydrogen–surface interactions. The deposition rate of DLC film is correlated to the ion density and CH₃ density.     

Enhancement of fluorine doped amorphous carbon thin films from microwave surface wave plasma activated above room temperature

Fluorinated amorphous carbon (a-C:F) thin films were synthesized above room temperature by microwave surface wave plasma chemical vapour deposition (MW SWP CVD). The effect of deposition temperature on optical, electrical, chemical and bonding properties of the a-C:F films were studied by ultraviolet–visible spectroscopy (UV–VIS), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectrometry (XPS), Raman spectrometry and TEM measurements. The film exhibits high transparency and decrease in optical band gap with increasing deposition temperature. FTIR study shows the increase in CC and decrease in C–Fx bonds of the films with increasing deposition temperature. Raman study shows some important structural changes in the films due to fluorine incorporation. XPS result shows the shift of carbon peak to higher binding energy due to carbon fluorine link to the films. TEM shows the increasing graphitic layer in the films with increasing deposition temperature.     

Structural features of diamond layers photo-emitting at sub-band gap energies

The photoemission behaviour of a series of diamond-based polycrystalline films irradiated by the second (2.3 eV), third (3.5 eV) and fourth (4.7 eV) harmonics produced by a Q-switched-mode-locked Nd: Yag laser has been investigated and related to the structural and compositional characteristics of the layers. The materials were polycrystalline undoped diamond films as well as Nd- and N-containing diamond films grown by CVD techniques, diamond-like and amorphous carbon layers. The morphological and structural characteristics of the films were investigated by electron microscopy, Raman spectroscopy and electron diffraction. The analysis of the photoemission curves does not evidence any improvement of the emission efficiency in the case of Nd-containing films nor for the diamond films grown in the presence of N_2. The results evidence conversely a strong correlation between the characteristics of the photoemission process at sub-band gap energies and the presence of amorphous sp²-C patches located at the diamond film surfaces. The photoemitting properties of our samples are discussed and rationalized by considering charge emission occurring at the sp²-diamond-vacuum border and the emission process governed by the ratio of amorphous sp²-C to crystalline sp³-C. The rather high values of quantum efficiency measured in the course of the present research at 3.5 and 4.7 eV suggest that a proper distribution of amorphous carbon onto a good quality diamond surface is the key factor for the preparation of efficient and stable photocathode materials.     

Structure modelling of DLC-films formed by pulsed arc method

Reported here is the continuation of the structure characterization of carbon thin films produced by a pulsed vacuum arc plasma source. Hydrogen free carbon films with thickness up to 3 μm were prepared with average deposition rate of 5 μm/h onto various substrates. It was found that these carbon films are not quite amorphous and can be described by modelling the clustered structure with different sp³/sp²/sp bond ratios depending on deposition conditions. Results of the experimental investigations and numerical modelling of the films structure are presented.     

Preparation and Characterization of CrN/CN and Nano-TiN/CN Composites

Chromium nitride (CrN)/carbon nitride (CN) and nano-tinanium nitride (TiN)/CN composites were prepared by in situ nitridation during the formation of amorphous CN (a-CN) matrix. The second crystalline phases CrN and TiN were distributed uniformly in a-CN phase. The CrN particle sizes ranged from submicrometers to several micrometers, and the average TiN particle diameter was found to be ∼16 nm. Thermogravimetry was used to reveal the thermal stability of these composite materials. X-ray photoelectron spectroscopy showed that the relative proportion of sp³ carbon-nitrided and sp² carbon-nitrided phase of the a-CN matrix was influenced by the different second phases.     

Synthesis of amorphous carbon nitride using reactive ion beam sputtering deposition with grazing bombardment

Amorphous carbon nitride (a-C:N) thin films were synthesised on steel substrates using reactive ion beam sputtering deposition (RIBSD). A single ion beam is arranged to sputter the graphite target at 75° incidence and concurrently bombard the growing film at grazing incidence angles of the ion beam. Nanoindentation, Raman spectroscopy, FTIR, FT-Raman and XPS were employed to characterise the mechanical and structural properties of the films. It was found that grazing incident bombardment has a significant effect on film structure through an increase in nitrogen content and formation of nitrogen doped structure.     

Comparative study on the bonding structure of hydrogenated and hydrogen free carbon nitride films with high N content

Hydrogenated and hydrogen free carbon nitride were grown by the ion beam assisted sputtering method using different precursors. Two sets of films were deposited by sputtering a graphite target and by assisting the growing film with nitrogen ions in a hydrogen free and a hydrogen atmosphere. The third set was grown by sputtering an azaadenine (C₄N₆H₄) target with argon or nitrogen ions. The bonding structure of the films was investigated by X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and infrared (IR) spectroscopy. Film properties were examined by UV–vis spectroscopy and plasmon energy (density) measurements. The experimental results indicate a pronounced change in structure for increasing nitrogen concentration up to 36 at%. Above 20 at% N, the intensity of the deconvoluted spectral features attributed to aromatic structures suffers a strong decrease. This effect is further enhanced by the presence of hydrogen in the films. The analysis of CN_x:H films obtained from the azaadenine precursor indicates that these films consist predominantly of aliphatic CN structures and terminating >CNH, CN groups. These results are consistent with the increasing activity of the nitrogen lone-pair feature in the UPS spectra, the intensity decrease of the aromatic CN vibrations in the IR spectra, the recession of the valence band leading edge, the increase of the optical band gap and the reduction of the film density.     

Characteristics and surface energy of silicon-doped diamond-like carbon films fabricated by plasma immersion ion implantation and deposition

Diamond-like carbon (DLC) films doped with different silicon contents up to 11.48 at.% were fabricated by plasma immersion ion implantation and deposition (PIII-D) using a silicon cathodic arc plasma source. The surface chemical compositions and bonding configurations were determined by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The results reveal that the sp³ configuration including Si–C bonds increases with higher silicon content, and oxygen incorporates more readily into the silicon and carbon interlinks on the surface of the more heavily silicon-doped DLC films. Contact angle measurements and calculations show that the Si-DLC films with higher silicon contents tend to be more hydrophilic and possess higher surface energy. The surface states obtained by silicon alloying and oxygen incorporation indicate increased silicon oxycarbide bonding states and sp³ bonding states on the surface, and it can be accounted for by the increased surface energy particularly the polar contribution.     

Wettability of nanocrystalline diamond films

The wettability of nanocrystalline CVD diamond films grown in a microwave plasma using Ar/CH₄/H₂ mixtures with tin melt (250–850 °C) and water was studied by the sessile-drop method. The films showed the highest contact angles θ of 168 ± 3° for tin among all carbon materials. The surface hydrogenation and oxidation allow tailoring of the θ value for water from 106 ± 3° (comparable to polymers) to 5° in a much wider range compared to microcrystalline diamond films. Doping with nitrogen by adding N₂ in plasma strongly affects the wetting presumably due to an increase of sp²-carbon fraction in the films and formation of C–N radicals.