共查询到16条相似文献,搜索用时 140 毫秒
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针对目前清洗技术存在的问题进行了详细分析,研究了微电子材料表面污染物的来源及其危害,并介绍了表面活性剂在颗粒去除方面的作用。研究了化学机械抛光(CMP)后Cu布线片表面的颗粒吸附状态,分析了铜片表面颗粒的吸附机理。采用非离子表面活性剂润湿擦洗方法,使Cu表面的颗粒处于易清洗的物理吸附状态。利用金相显微镜和原子力显微镜(AFM)在清洗前后进行对比分析,实验采用聚乙烯醇(PVA)刷子分别对铜片和铜布线片进行清洗,发现非离子界面活性剂能够有效去除化学机械抛光后表面吸附的杂质,达到了较好的清洗效果。 相似文献
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为了更有效地去除铜晶圆化学机械抛光(CMP)后清洗残留的SiO2颗粒,选择了2种阴离子型表面活性剂(SLS、TD-40)和2种非离子型表面活性剂(AEO-5、JFC-6),通过接触角、表面张力、电化学、分子动力学模拟实验探究了4种表面活性剂在铜表面的润湿性、吸附构型及吸附稳定性。通过优化表面活性剂质量浓度,选择达到吸附稳定时的质量浓度配置4种表面活性剂来清洗铜晶圆,利用扫描电子显微镜观测铜表面形貌,对比它们的清洗效果。随后选择TD-40和JFC-6进行复配,研究复配后表面活性剂对硅溶胶颗粒的去除效果。实验结果表明,使用体积比为2∶1的TD-40与JFC-6进行复配得到的CMP清洗液对SiO2颗粒的去除效果比单一表面活性剂的更好。 相似文献
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多层Cu布线化学机械抛光后颗粒的去除问题 总被引:1,自引:1,他引:0
针对多层Cu布线化学机械抛光后去除表面吸附颗粒时难以解决的氧化腐蚀问题,分析了颗粒在抛光后Cu表面上存在的两种吸附状态即物理吸附和化学吸附。采用在清洗剂中加入非离子表面活性剂的方法,使Cu表面的颗粒处于易清洗的物理吸附状态;为解决由于Cu在停止化学机械抛光后,具有高能的新加工表面被残留抛光液继续氧化和腐蚀,影响清洗效果的问题,采用在清洗剂中添加防蚀剂BTA的方法在Cu表面形成Cu-BTA单分子致密膜,有效控制了表面氧化和腐蚀。利用光学显微镜对采用不同清洗剂清洗过的Cu表面进行观察分析,发现在清洗剂中添加表面活性剂和防蚀剂BTA,不仅有效去除了表面沾污的颗粒,又保证了清洗后表面的完美与平整。 相似文献
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摘要:在本文中提出了一种新型有效去除二氧化硅颗粒的FA/O清洗液,其主要成分包括FA/OII型螯合剂和FA/O型活性剂。这种清洗液能够同时去除以物理和化学吸附在晶圆表面的硅溶胶颗粒。 在本文实验过程中通过改变螯合剂和活性剂的浓度, 得出最佳清洗浓度。并且,讨论了这种FA/O碱性清洗剂去除硅溶胶颗粒的机理。根据实验结果可知,FA/OII型螯合剂和活性剂都能够有效去除硅溶胶颗粒。当FA/OII型螯合剂和FA/O活性剂达到最佳配比时,这种新型清洗液能够有效去除硅溶胶颗粒。 相似文献
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本文针对抛光后晶片的颗粒和有机污染物提出了一种新型清洗方法,它结合了非离子表面活性剂和掺硼金刚石膜(BDD)阳极电化学氧化的优势。非离子表面活性剂可以在抛光后晶片上形成一层保护膜,使晶片表面颗粒易于去除。颗粒去除对比实验结果通过金相显微镜观察得知,体积比为1%的非离子表面活性剂的颗粒去除效果最佳。然而表面活性剂保护膜本身属于有机物,它最终也需要被去除。金刚石膜阳极电化学氧化(BDD-EO)可以用来去除有机物,因为它可以有效降解有机物。三个有机污染物去除对比实验分别为:一是先用非离子表面活性剂再用BDD-EO,二是单纯用BDD-EO去除有机物,第三种是用传统RCA清洗技术。通过XPS检测结果表明,用BDD-EO清洗的晶片表面的有机残留明显少于传统RCA技术,并且晶片表面的非离子表面活性剂也可以有效去除。 相似文献
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《微纳电子技术》2019,(2):151-156
为了去除蓝宝石化学机械抛光(CMP)后表面残留的抛光液,采用表面活性剂复配清洗法,选用非离子表面活性剂脂肪醇聚氧乙烯醚9 (AEO9)和阴离子表面活性剂脂肪醇聚氧乙烯醚硫酸钠(AES)按不同质量比复配,并与酸碱清洗法进行了对比。对CMP后的蓝宝石进行超声辅助清洗实验,分析了不同复配比对于蓝宝石晶片清洗后表面接触角、表面形貌以及颗粒去除率的影响。结果表明:表面活性剂复配清洗法的清洗效果优于传统的酸碱清洗法,最优配比的表面活性剂复配清洗法的颗粒去除率较酸碱清洗法提升了31.17%;当表面活性剂复配清洗法中AEO9与AES复配比为1∶1时,清洗后的蓝宝石表面接触角最小,为21.6°,表面形貌最优,颗粒去除率达到99.65%,清洗效果最好。 相似文献
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This paper presents a new cleaning process for particle and organic contaminants on polished silicon wafer surfaces.It combines a non-ionic surfactant with boron-doped diamond(BDD) film anode electrochemical oxidation. The non-ionic surfactant is used to remove particles on the polished wafer's surface,because it can form a protective film on the surface,which makes particles easy to remove.The effects of particle removal comparative experiments were observed by metallographic microscopy,which showed tha... 相似文献
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The cleaning of copper interconnects after chemical mechanical planarization (CMP) process is a critical step in integrated circuits (ICs) fabrication. Benzotriazole (BTA), which is used as corrosion inhibitor in the copper CMP slurry, is the primary source for the formation of organic contaminants. The presence of BTA can degrade the electrical properties and reliability of ICs which needs to be removed by using an effective cleaning solution. In this paper, an alkaline cleaning solution was proposed. The alkaline cleaning solution studied in this work consists of a chelating agent and a nonionic surfactant. The removal of BTA was characterized by contact angle measurements and potentiodynamic polarization studies. The cleaning properties of the proposed cleaning solution on a 300 mm copper patterned wafer were also quantified, total defect counts after cleaning was studied, scanning electron microscopy (SEM) review was used to identify types of BTA to confirm the ability of cleaning solution for BTA removal. All the results reveal that the chelating agent can effectively remove the BTA residual, nonionic surfactant can further improve the performance. 相似文献
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Tung Ming Pan Tan Fu Lei Chao Chyi Chen Tien Sheng Chao Ming Chi Liaw Wen Lu Yang Ming Shih Tsai Lu C.P. Chang W.H. 《Electron Device Letters, IEEE》2000,21(7):338-340
Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH4OH+H2O) alkaline aqueous solution to enhance removal of metallic and organic contamination. From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning 相似文献
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Tung Ming Pan Tan Fu Lei Fu Hsiang Ko Tien Sheng Chao Tzu Huan Chiu Ying Hao Lee Chih Peng Lu 《Semiconductor Manufacturing, IEEE Transactions on》2001,14(4):365-371
In this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with the poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical properties of capacitors 相似文献