V波段波导短截线带通滤波器设计

设计和分析了V波段E面波导短截线带通滤波器。利用E面波导短截线带阻滤波器的通带-阻带特性与矩形波导的高通特性相结合,将波导短截线带阻滤波器嵌入WR-15矩形波导中,设计具有高阻带抑制性能、过渡边带陡峭、宽阻带范围的V波段宽带带通滤波器。采用"场"、"路"相结合的方法设计的带通滤波器,仿真与测试结果吻合较好,验证了该设计方法的有效性。经测试实现了18%的1 dB带宽,在50.0～57.8 GHz通带内插入损耗≤1 dB,阻带频率58.9 GHz处抑制为43.6 dBc。     

达哈布风光(埃及,西奈半岛)

为了抑制杂波,需要在通信系统中安装带阻滤波器.采用切比雪夫低通原型设计带阻滤波器,用介质同轴谐振器加载电容的结构实现串联谐振,用π型LC网络实现1/4波长传输线.采用高品质因数(Q)、高介微波介质材料制作了中心频率为933 MHz、阻带衰减大于40 dB的带阻滤波器,测试结果符合设计要求.滤波器具有体积小,性能稳定等特点.     

基于T 型谐振器的新型可重构滤波器的设计

基于T 型谐振器结构,设计了一款新型小型化可重构滤波器。它可以通过开/ 关射频开关,实现三种滤波器的重新配置。这三种模式分别为带阻滤波器(BSF)、宽阻带带阻滤波器(WB鄄BSF)和双模带通滤波器(DB-BPF)。设计并制造了一款小型可重构滤波器实物(εr =2.65,h =1 mm)。其中,带阻滤波器的阻带中心频率为3.89 GHz,-3 dB相对带宽为90.9% (2.12 - 5.65 GHz);宽带带阻滤波器的阻带中心频率为3.54 GHz,-3 dB 相对带宽为137.85%(1.1～5.98 GHz);双模带通滤波器的两个通带中心频率分别为1.53 GHz 和6.89 GHz,-3 dB 相对带宽分别为17. 6%(1.4～1.67 GHz)和1.16% (6.85～6.93 GHz),两通带之间回波损耗优于15 dB。实物测试结果与仿真结果基本一致。     

MEMS毫米波滤波器的设计与制作

开展了一种基于MEMS工艺的毫米波带通滤波器结构设计和工艺实现,该滤波器结构采用高阻硅作为衬底材料的薄膜支撑结构,选用平行耦合滤波器形式,使用HFSS分析软件对该结构进行了模拟仿真。设计了中心频率为35.0GHz、带内损耗为2.2dB、30dB抑制带宽为2.2GHz的MEMS毫米波滤波器。给出了一套能降低毫米波损耗的MEMS毫米波带通滤波器工艺流程方案,并针对该工艺流程方案进行了关键参数的工艺误差仿真,实现了MEMS毫米波滤波器的工艺制作和测试。测试结果表明,获得的毫米波滤波器的测试结果与仿真结果比较接近。     

一种具有超远寄生阻带的带阻滤波器的设计

本文介绍了一款具有超远寄生阻带的紧凑型带阻滤波器。在传统的带阻滤波器设计方法基础上,本文通过谐 振腔加载电容来实现小型化,并且在电容圆盘上挖槽实现了超远的寄生阻带。首先设计一款具有超远寄生阻带的单腔, 之后将几个这种单腔串联起来构成了带阻滤波器。为了阐述设计过程,设计了一款中心频率为2.35GHz、相对带宽 4.2%、寄生阻带大于12.5GHz 的带阻滤波器,其过渡带为100MHz,阻带抑制大于40dB。     

Ka 波段宽带单边带调制器集成电路的设计

基于相移法实现SSB(单边带)调制器理论,设计制造了一种Ka 波段宽带SSB 调制器集成电路。对相移法产生单边带调制信号的原理进行了分析,利用无源电路的3D 电磁仿真分析和ADS 整体电路非线性仿真相结合的方法对调制器进行了优化。设计制造的90°相移电桥网络和同相合成器满足了产生Ka 波段SSB 信号的幅相要求,同时给出了测试结果。调制器在30 ~36GHz 频带内插入损耗臆14dB;载波和对称边带抑制逸15dB;其它边带抑制逸13dB;输入1dB 压缩功率38dBm;外形尺寸18mm×6mm。这种相移法单边带调制器不需要带通滤波器,具有电路简单,载波抑制比高,对相位误差要求不高的优点。     

基于薄膜IPD工艺的N77频段多零点带通滤波器设计

针对微波滤波器对高性能和低成本的应用需求,将薄膜集成无源器件(Integrated Passive Device, IPD)工艺与印刷电路板(Printed Circuit Board, PCB)工艺相结合,设计了一款含有三个传输零点的宽带集总带通滤波器。为提升器件Q值,降低带内损耗并缩小器件尺寸,将滤波器谐振回路的电感以三维电感的形式设置于金属层较厚的PCB基板中,而其他电路结构则被集成在高阻硅基片上,通过倒装焊植球的方式(Flip-Chip Ball Grid Array, FBGA)将高阻硅基芯片键合到基板上。为验证理论的有效性,加工制备了一款N77频段的带通滤波器,其不包括外部管脚的整体尺寸为2.2 mm×3.0 mm, 1 dB带宽为918 MHz,带测试板的实测插损为-2.58 dB。测试结果与预期的仿真结果达成一致。     

基于双二阶的低功耗椭圆带通滤波器设计

为解决椭圆滤波器通带纹波较大的问题,设计了一种基于双二阶的椭圆窄带带通滤波器,滤波器由3个双二阶构造的带阻滤波器级联实现,滤波器中心频率11kHz,带宽2kHz,通带纹波不超过1dB,阻带衰减不小于30dB每倍频程。滤波器功耗不超过30mW,满足水下引信接收机长时间工作的要求。     

基于GaAs PHEMT工艺的Ka波段三通道开关滤波器

基于0.15μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计了一款22～42 GHz的宽带三通道开关滤波器芯片。该开关滤波器由单刀三掷开关、带通滤波器、控制电路构成。开关采用场效应晶体管(FET)串并结合结构实现。带通滤波器采用梳状结构，一端加载金属-绝缘体-金属(MIM)电容实现。芯片集成了2∶4线译码器作为控制电路，实现通道的选择和切换。芯片尺寸为3.0 mm×2.4 mm×0.1 mm。测试结果表明，三个通道的插入损耗均小于8.5 dB,带内回波损耗均小于-10 dB,带外衰减均大于40 dB。该开关滤波器芯片具有插入损耗小、隔离度高、集成度高、阻带宽的特点。     

10MHz带阻型压电石英晶体滤波器研制

采用三节3晶体的格型电路.设计和研制出了用于边带型通讯机中进行狭窄频带抑制的一种中高频带阻型晶体滤波器新产品.其关键技术指标为10 MHz中高频滤波晶体半成品的设计,插损IL≤5 dB,3 dB带阻宽度BW3 dB≤±3 kHz,带阻衰减(限波)≥45 dB.另外,该文还给出了两节2晶体和三节3晶体的滤波器电路图及滤波器产品的实测传输曲线.     

Planar Ultra-Wideband Bandpass Filter Using Edge Coupled Microstrip Lines and Stepped Impedance Open Stub

The design and implementation of a planar ultra-wideband (UWB) bandpass filter are presented. Three interdigital edge coupled microstrip lines are used for coupling enhancement. A stepped impedance open stub is used for realizing transmission zeros simultaneously in upper and lower stop bands as well as impedance matching in ultra-wide pass band. A pass band from 3.1-10.6 GHz is achieved with an insertion loss of 0.5 dB, a return loss of about 18 dB, a sharp out-of-band-rejection, and a low group delay of only 0.21ns. Single- and double-section filters are realized to meet the UWB mask requirement. The design of the filter is simple, and it shows good frequency response.     

FIR带通滤波器优化设计研究

提出了一种基于BP学习算法的正弦基函数神经网络模型，给出了该社会网络模型的收敛性条件，为社会网络训练的学习效率选取提供了依据。根据本文提出的优化设计算法，作者详细研究了FIR线性相位带通滤波器优化设计实例，研究结果表明，本文设计的FIR带通滤波器，基阻带衰耗特性好，最小衰耗分别在100分贝和140分贝以上，这是任何其它优化设计方法难以实现的，研究结果表明了本文提出的基于BP算法的正弦基神经网络模型是一种有效的神经网络模型。     

三次泛音单片式、高频及高阻带晶体滤波器

研究了三次泛音模式下单片式晶体滤波器的设计方法、制作工艺。通过优化滤波器结构、合理控制晶片镀回频率等方法,实现了晶体滤波器的高阻带和高杂波抑制。制作出一种工作频率为41.4 MHz,响应模式为三次泛音的单片式晶体滤波器。结果表明,该晶体滤波器的-1 dB带宽为2.9 kHz,带内波动为0.3 dB,阻带抑制为82 dB。     

一种线性相位LC滤波器的设计

为解决滤波器带外抑制和通带内相位波动之间的矛盾,该文介绍了一种线性相位LC滤波器的设计方法,通过对滤波器传输零点特性进行分析,根据指标要求灵活设计电路拓扑结构和零点位置,采用内、外均衡电路级联网络两种方法,来实现具有高矩形、线性相位特性的滤波器。设计了中心频率21.4 MHz、0.5 dB带宽大于10 MHz、矩形系数(45 dB/0.5 dB)小于2、带内相位波动绝对值小于5°和中心频率1 300 MHz、1 dB带宽大于200 MHz、矩形系数(35 dB/1 dB)小于2、带内相位波动绝对值小于5°两款滤波器。该方法工程实用化强,便于调试和制作,可应用于幅相特性要求高的微波系统中,提高了系统性能指标。     

A High-Power Wide-Band Waffle-Iron Filter

This paper describes the design and measured performance of an L-band model of a high-power wide-band low-pass waffle-iron filter. Three different waffle-iron filters with staggered stop bands are connected in series to give a combined stop band that extends from 2.2 Gc to 13.7 Gc. where the attenuation is 60 db or greater. The waffle-iron filter attenuates all propagating waveguide modes which can propagate at frequencies in the above stop band. In the pass band the waffle-iron filters are matched to full size L-band waveguide using quarter-wavelength stepped transformers. The pulsed power-handling capacity without breakdown is measured to be over 1.4 Mw peak power with air at atmospheric pressure filling the filter.     

Design of compact low pass filter with wide stop band using tri-section stepped impedance resonator

This paper reports the design of a compact low pass filter (LPF) with wide stop band region using tri-section stepped impedance resonators in microstrip medium. Experimental results of a low pass filter designed at 1 GHz have been compared against the analytical and EM simulation results for the validation of the design. Results are satisfactorily matching each other. The maximum insertion of the measured filter is 0.2 dB and minimum return loss is 13.5 dB over the pass band. The stop band rejection is better than 20 dB from 1.5 GHz to 4.2 GHz and hence wide stop band performance is achieved. Overall size of the filter is 30 mm × 20 mm × 0.78 mm which is 0.1λ × 0.066λ × 0.0026λ at 1 GHz.     

Novel micromachined lumped band pass filter for 5.2 GHz WLAN applications

This paper describes the design, manufacturing and experiments of a lumped element band pass filter in a new topology. The design starts from a second order capacitive coupled resonator topology. An additional series inductor is inserted in the filter classical topology, for shifting two transmission zeros on the real frequency axes in the filter's band stop, to improve the high frequency response. Design equations for the new band stop resonance frequency are presented together with the analysis of the correspondence between the band pass and band stop attenuation vs. the quality factor of the shunt and series inductors used. The filter is supported on a 6.4 μm thin dielectric membrane, and is manufactured using silicon micromachining, in CPW technology. Measurements illustrated a minimum 2.75 dB insertion loss at 5.5 GHz in the band pass, and more than 40 dB attenuation, at 8 GHz.     

一种幅相一致性高可靠LC滤波器设计

针对批量生产的相控阵雷达发射-接收(T/R)组件对滤波器的幅相一致性要求较高的问题,该文分析了影响LC滤波器幅相一致性的因素,并从产品的电路原理和结构方面对与产品可靠性有关的元器件、工艺流程等因素进行了分析,设计了一款3 GHz带外抑制大于60 dB、多只间相位一致性≤5°、多只间幅度一致性≤0.2 dB的滤波器。结果表明,该滤波器具有较好的矩形系数、带外抑制和高幅相一致性,产品用于某高可靠星载系统T/R组件中,实现了批量生产对幅相一致性的要求。     

Design of saw filters in SS-FDMA routers for mobile satellite systems

The present paper reports the design of a SAW filter bank consisting of 26 linear phase filters with bandwidths ranging from 60 to 2180 kHz, 0·5/40 dB transition width narrower than 30 kHz and stopband rejection as high as possible. Passbank amplitude and phase ripple limits are 1 dB and 4° peak-to-peak respectively. Three candidate filters of bandwidth 60 kHz, 400 kHz and 2·180 MHz were selected for detailed design, taking into account spurious effects such as acoustic regeneration and diffraction as well as technology limits. Since the physical length of a SAW filter—as any transversal (FIR) filter—is determined by (i) the required passband amplitude ripple, (ii) the stopband rejection level and (iii) the transition width, the steepness of the required passband-to-stop band transitions in these filters dictates their physical size to be unusually large, resulting in an overall size for each packaged filter of 360 × 38 × 17 mm, i.e. 14·2 × 1·5 × 0·7 inches. The electrical specifications are met by all but the 2180 kHz filter, whose shape factor, for a 30 kHz transition band, would be 1·027 : 1, beyond the state of the art. The filter bank has about 27 dB insertion loss per filter, plus roughly 14 dB (1 : 26) power split loss.     

10.7MHz带阻型石英晶体滤波器研制

采用如今晶体滤波器设计中最为常用的格型电路,成功设计和研制出了用于通讯机中进行狭窄频带抑制的一种中高频带阻型晶体滤波器新产品.主要技术指标是:插损IL≤3dB、3dB带阻宽度BW3dB≤±3KHz、带阻衰减(限波)≥50dB、体积小、加工难度大等.研制的结果较好的满足了设计要求.