磁控溅射Cu-Nb和Cu-Mo薄膜结构与性能

采用磁控溅射制备含1.16%～15.8%(原子分数)Nb的Cu-Nb及含2.2%～27.8%Mo的Cu-Mo合金薄膜,井采用EDX、XRD、SEM、显微硬度仪和电阻计对薄膜的成分、结构和性能进行研究。结果表明,Nb和Mo的添加分别使Cu-Nb及Cu-Mo薄膜晶粒显著细化,Cu-Nb和Cu-Mo薄膜呈纳米晶结构,存在Nb在Cu中的fcc Cu(Nb)和Mo在Cu中的fcc Cu(Mo)非平衡亚稳过饱和固溶体,固溶度随Nb或Mo含量增加而上升。添加Nb和Mo显著提高Cu-Nb及Cu-Mo薄膜的显微硬度和电阻率,且随Nb或Mo含量增加而升高。经650℃热处理1h后,Cu-Nb和Cu-Mo薄膜显微硬度和电阻率均下降,且分析表明均发生基体相晶粒长大,并出现微米-亚微米级富Cu第二相,Cu-Nb及Cu-Mo薄膜结构和性能形成及演变的主要原因是添加的Nb、Mo引起的晶粒细化效应以及退火中基体相晶粒度的增大。     

磁控溅射沉积Cu-W膜的结构及性能研究

为得到最佳性能的磁控溅射Cu-W薄膜,采用磁控溅射技术在玻璃片上沉积Cu-W单层膜。采用电子探针测试薄膜中W含量,采用X射线衍射仪、扫描电镜、硬度仪、凹抗仪、分析膜层物相、形貌及耐磨性。研究了W含量对Cu-W薄膜显微结构和性能的影响。结果表明,在沉积过程中W对Cu-W薄膜的晶粒大小及沉积速率有重要影响:随W含量的增加,Cu-W薄膜的晶粒尺寸减少,薄膜的沉积速率随之减少,薄膜W含量对膜的硬度、耐磨性能也起着关键作用;当W含量在11.1%时,Cu-W薄膜具有最好的硬度和耐磨性。     

镶嵌靶磁控溅射Cu-W薄膜的结构与力学性能

为研究W含量对Cu-W薄膜的结构与力学性能的影响,用磁控溅射工艺制备Cu-W薄膜,靶材为镶嵌组合型。薄膜的成份、结构、表面形貌分别选用能谱仪(EDS)、X射线衍射仪(XRD)和高分辨透射电镜(HRTEM)、扫描电镜(SEM)及原子力显微镜(AFM)进行表征。薄膜屈服强度σ_0.2和裂纹萌生临界应变ε_c、弹性模量E及显微硬度H分别用微小力测试系统和纳米压痕仪进行测试。结果表明,调整W靶的面积占比即可控制薄膜成分,当W靶的面积占比从5%增至25%时,Cu-W薄膜的W含量(原子分数)从2.30%逐渐提高到15.10%,且薄膜中存在fcc Cu(W)亚稳准固溶体。随W含量的增加,Cu-W薄膜的平均晶粒尺寸从28 nm逐渐减小至18 nm,准固溶度从1.30%(原子分数)W逐渐增至9.50%W,薄膜的表面光洁度提高。随W含量的增加,Cu-W薄膜的屈服强度σ_0.2和显微硬度H提高较为明显,弹性模量E稍有增加,而裂纹萌生临界应变ε_c则减小。Cu-15.10%W薄膜具有最小的平均晶粒尺寸和最高的表面光洁度,其屈服强度...     

磁控溅射Cu-W薄膜的组织与结构

采用双靶磁控溅射共沉积方法制备Cu-W薄膜,其微观结构及形貌通过XRD、TEM和SEM方法测试,结果表明,Cu-W薄膜是由Cu固溶于W或W固溶于Cu的亚稳态固溶体组成,且随着W含量的增加,Cu-W薄膜依次形成面心立方fee结构的Cu基亚稳固溶体、fee和bee结构固溶体的双相区以及体心立方bee结构的W基亚稳固溶体,晶粒尺寸随溶质原子含量的增加而减小.这些亚稳固溶体的形成是由于溅射出的原子动能足以克服Cu、W固溶所需的混合热.以及溅射过程中粒子的纳米化和成膜过程中引入的大量缺陷造成的.     

磁控溅射共沉积Al-Pb复合薄膜微观结构及电性能

采用磁控溅射共沉积法制备Al-Pb复合薄膜,运用TEM、SEM、EDX和电阻-温度仪对薄膜微观结构和电性能进行研究.结果表明,Al-Pb薄膜具有温度敏感性,电阻温度系数(TCR)可达8.4×10-3℃-1.薄膜微观结构含富Al基体相和富Pb第二相,呈两相组织.随着厚度的增大,第二相粒子及基体相晶粒粒度增大,界面密度降低,界面电子散射效应减弱,电阻率下降,TCR值增大.与Al膜和移去Al基体形成的Pb膜的电性能对比研究显示,Al-Pb薄膜存在并联导电机制,电阻率受两相电阻率和体积分数的影响.     

电沉积铜的电阻率和硬度的时间效应

为了研究钢基体上电沉积铜的电阻率和硬度随阴极电流密度及时间的变化规律,通过制备不同电流密度的电沉积铜样品,分别采用直流电桥式电阻仪和显微硬度计测定样品的电阻率和硬度.结果表明,电沉积铜的硬度和电阻率随阴极电流密度增大而提高,然而经时效时理后会下降.阴极电流密度增加,电沉积铜层的晶粒变小,而时效处理能够提高晶粒度和降低缺陷密度.     

电沉积软磁铁箔性能的研究

为优化电沉积制备软磁铁箔的工艺条件,研究电解液温度和阴极电流密度对铁箔的磁学、力学和电学性能的影响规律,采用软磁材料测试仪、直流电阻电桥和显微硬度计研究了工艺条件变化时对铁箔的磁参数、电阻率和显微硬度的影响,并对铁箔的金相显微组织进行分析.结果表明:阴极电流密度增大时,铁箔的矫顽力增大,最大磁导率降低,显微硬度值及电阻率均提高;电解液温度提高时,铁箔的矫顽力降低,最大磁导率增大,显微硬度值下降,而电阻率提高;在650℃经过真空退火后的铁箔矫顽力降低,最大磁导率提高,其电阻率和硬度都下降,韧性明显提高.电沉积工艺条件改变时,薄膜的晶粒尺寸影响铁箔性能的变化.     

单辊旋铸CuCr25合金的显微组织及性能

研究了单辊旋铸CuCr25合金的显微组织和性能.结果表明,单辊旋铸CuCr25合金的显微组织呈现出球状富Cr相与枝晶状富Cr并存于Cu基体中的形貌,且富Cr相的大小随条带厚度的变化而变化,分析表明,单辊旋铸合金的快速凝固过程中发生了亚稳态的液相分离.与真空感应熔炼CuCr25合金的显微硬度相比,单辊旋铸CuCr25合金的显微硬度增大了57%,这主要是由于固溶度增加和晶粒细化的缘故.     

C含量对间隙固溶Cu-C薄膜微结构、硬度及电阻率的影响

采用双靶磁控共溅射方法制备了一系列不同C含量的Cu-C薄膜,采用X射线衍射仪、透射电子显微镜、纳米压痕仪和四探针电阻仪表征了薄膜微结构、力学性能及其电阻率。结果表明:在溅射粒子高分散性和薄膜生长非平衡性的共同作用下,Cu-C薄膜形成过饱和间隙固溶体。剧烈的晶格畸变使薄膜的晶粒细化,其硬度相应提高。随着C含量的增加,薄膜的硬度逐渐提高,当C含量为8.2 at.%时,由纯Cu薄膜硬度2.8GPa提高到4.3 GPa。与此同时,薄膜电阻率仅由纯Cu薄膜的2.0μΩ·cm到提高到10.7μΩ·cm,远低于其他置换型Cu基固溶体的电阻率。研究结果表明,相对于其他置换型原子,间隙型C原子的添加在提高Cu基薄膜力学性能的同时具有更好的导电性。     

基体温度对中频脉冲非平衡磁控溅射技术沉积类金刚石薄膜结构与性能的影响

利用中频脉冲非平衡磁控溅射技术在不同的基体温度下制备了类金刚石(DLC)薄膜,采用Raman光谱、X射线光电子能谱(XPS)、纳米压痕测试仪、椭偏仪对所制备DLC薄膜的微观结构、机械性能、光学性能进行了分析。Raman光谱和XPS结果表明,当基体温度由50℃增加到100℃时,DLC薄膜中的sp3杂化键的含量随基体温度的升高而增加,当基体温度超过100℃时,DLC薄膜中的sp3杂化键的含量随基体温度的升高而减少。纳米压痕测试表明,DLC薄膜的纳米硬度随基体温度的增加先增加而后减小,基体温度为100℃时制备的薄膜的纳米硬度最大。椭偏仪测试表明,类金刚石薄膜的折射率同样随基体温度的增加先增加而后减小,基体温度为100℃时制备的薄膜的折射率最大。以上结果说明基体温度对DLC薄膜中的sp3杂化键的含量有很大的影响,DLC薄膜的纳米硬度、折射率随薄膜中的sp3杂化键的含量的变化而变化。     

Preparation and characterization of sputtered Cu films containing insoluble Nb

Copper films containing various amounts of insoluble Nb (up to 24.7 at.%) were prepared by r.f. magnetron sputtering. The crystallography and microstructure of the films were investigated for as-deposited and annealed Cu(Nb) thin films. Cu(Nb) thin films are found to consist of non-equilibrium supersaturated solid solution of Nb in Cu with a nanocrystalline microstructure. X-ray diffraction and scanning electron microscope analyses revealed a reduction in the grain sizes of the films with increasing Nb content in the films leading to a grain refinement. The electrical resistivity of as-deposited and annealed Cu(Nb) thin films is found to be low for an Nb content 2.7 at.%. Significant drops in the resistivity were observed for the high Nb contents after annealing at 530 °C which may be due to grain growth and formation of Nb-bearing phase in the film. Microhardness of the films was found to increase with the Nb concentration due to the combined effects of grain refinement and the solute strengthening of Nb.     

Microstructure and properties of Al-doped ZnO thin films by nonreactive DC magnetron sputtering at room temperature following rapid thermal annealing

A series of Al-doped ZnO (AZO) thin films deposited by nonreactive DC magnetron sputtering at room temperature following rapid thermal annealing was studied to examine the influence of these Al doping concentration, sputtering power and annealing temperature on their microstructure, electrical and optical transport properties. AZO thin films with Al dopant of 3 wt% were oriented more preferentially along the (002) direction, bigger grain size and lower electrical resistivity The resistivity of AZO films decreases with the increase of Al content from 1 to 3 wt%, sputtering power from 60 to 100 W and the annealing temperature from 50 to 250 °C. Sputtering power and annealing had some effect on the average transmittance of AZO thin films. For AZO thin films with Al doping level of 3 wt%, the lowest electrical resistivity of 5.3 × 10⁻⁴ Ω cm and the highest optical transmittance of 88.7% could gain when the sputtering power was 100 W and the annealing temperature was 200 °C or above.     

Microstructure of electroplated Cu(Ag) alloy thin films

Electroplated Cu(Ag) alloy thin films are potential candidates for future electronic devices in terms of lifetime and reliability compared to copper as the state of the art interconnect material. In the present paper we focus on the microstructure of Cu(Ag) alloy films considering the grain evolution as well as silver incorporation and segregation. We show that Ag alloying addition prevents room temperature recrystallization. Thermally induced grain growth occurs mainly between 180 °C and 330 °C. Silver can be incorporated as solid solution into the Cu matrix by up to 0.8 at.% after annealing and even in higher concentrations in the as-deposited state, which is significantly above the equilibrium solubility limit. Precipitations are formed by the continuous mode and can be mainly found at the film surface but also inside the Cu(Ag) grains as ball-shaped particles. Based on our results a reliability improvement is expected by mechanical strengthening due to alloying effects while maintaining a low electrical resistivity and a {111} fiber texture.     

N掺杂Cu2O薄膜的低温沉积及快速热退火研究

采用氧化亚铜(Cu_2O)陶瓷靶,利用射频磁控溅射沉积法在氮气和氩气的混合气氛下制备了N掺杂Cu_2O(Cu_2O∶N)薄膜,并在N_2气氛下对薄膜进行了快速热退火处理,研究了N_2流量和退火温度对Cu_2O∶N薄膜的生长行为、物相结构、表面形貌及光电性能的影响。结果显示,在衬底温度300℃、N_2流量12sccm条件下生长的薄膜为纯相Cu_2O薄膜;在N_2气氛下对预沉积薄膜进行快速热退火处理不影响薄膜的物相结构,薄膜的结晶质量随退火温度(450℃)的升高而显著改善;快速热退火处理能改善薄膜的结晶质量和缺陷,降低光生载流子的散射,增强载流子的传输,预沉积Cu_2O∶N薄膜经400℃退火处理后展示出较好的电性能,薄膜的霍尔迁移率(μ)为27.8cm~2·V~(-1)·s~(-1)、电阻率(ρ)为2.47×10~3Ω·cm。研究表明低温溅射沉积和快速热退火处理能有效改善Cu_2O∶N薄膜的光电性能。     

基底温度对直流磁控溅射制备氮化铜薄膜的影响研究

采用反应直流磁控溅射镀膜法,在氮气分压为0.9Pa、不同基底温度下、玻璃基底上制备了纳米多晶Cu3N薄膜,并研究了基底温度对薄膜结构和性能的影响。结果表明,当基底温度为100℃及以下时,薄膜以[111]方向择优生长为主;在150℃及200℃时,薄膜以[100]方向择优生长为主;250℃时开始出现Cu的[111]方向生长,300℃时已完全不能形成Cu3N晶体,只有明显的Cu晶体。随基底温度的升高,薄膜的沉积速率在13～28nm/min呈U型变化,低温和高温时较高,150℃时最低;薄膜的电阻率显著降低;薄膜的显微硬度先升后降,100℃时显微硬度最大。     

Analysis of Indentation Size Effect on Mechanical Properties of Cu-Diffused Bulk MgB2 Superconductor Using Experimental and Different Theoretical Models

This study indicates the change of the electrical, microstructural, physical, mechanical and superconducting properties of Cu-diffused bulk MgB₂ superconductors by means of scanning electron microscopy (SEM), X-ray diffraction analysis (XRD), microhardness and dc resistivity measurements. The samples are prepared at different annealing temperatures in the range from 650 to 850 ^°C. Electrical and superconducting properties of samples are estimated from the dc electrical resistivity measurements. Moreover, microhardness measurements are performed to investigate the mechanical properties. Further, phase composition, grain sizes and lattice parameters are determined from the XRD measurements. At the same time, the surface morphology and grain connectivity of the samples are examined by SEM investigations. The measurements conducted demonstrate that both the Cu diffusion into the MgB₂ system and the increment in the diffusion-annealing temperature increase the critical transition temperatures. Similarly, microstructure and grain size improve while the voids and porosity decrease with the increase of the diffusion-annealing temperature. In addition, the experimental results of the microhardness measurements are investigated using the Meyer’s law, PSR (proportional specimen resistance), modified PRS (MPSR), elastic-plastic deformation model (EPD) and Hays–Kendall (HK) approach. The obtained microhardness values of the samples decrease with the increase of the diffusion-annealing temperature up to 850 ^°C. The Hays–Kendall approach is found to be the most successful model describing the mechanical properties of the samples studied in this work.     

Interfacial Characteristics of Nanocrystalline FeMoSiB Alloys

By using X-ray diffraction (XRD), transmission electronic microscopy (TEM) and transmissionMssbauer spectroseopy (TMES), the formation, structure and properties including microhardnessand electrical resistivity of nanocrystalline FeMoSiB alloys have been investigated. By annealing theas-quenched FeMoSiB sample at 833-1023K for 1 h, nanocrystalline materials with grain sizes of15 to 200 nm were obtained. Mssbauer spectroscopy results reveal a quasi-continuous distributionfeature of P(H)-H curves for 15 nm-and 20 nm-grained samples. Also, it was found that resistivityand microhardness of nanocrystalline Fe-Mo-Si-B alloys exhibit strong grain size effect.     

晶粒尺寸对氧化钒薄膜电学与光学相变特性的影响

采用直流对靶磁控溅射方法制备氧化钒薄膜,通过改变热处理温度获得了具有不同晶粒尺寸的相变特性氧化钒薄膜,对氧化钒薄膜相变过程中电阻和红外光透射率随温度的突变性能进行研究.结果表明:经300℃和360℃热处理后,薄膜内二氧化钒原子分数达到40%,氧化钒薄膜具有绝缘体-金属相变特性,薄膜的晶粒尺寸分别为50nm和100nm;...