不同退火时间对[Ag/FePt]_(10)多层膜磁性能和微结构的影响

采用射频磁控溅射的方法,在玻璃基片上制备了不同Ag层厚度的[Ag/FePt 2nm]10多层薄膜,经550℃真空热处理后,得到L10有序结构的FePt薄膜.实验结果显示,FePt单层薄膜经550℃退火30min后其易磁化轴处于垂直方向和面内方向之间,而550℃退火60min后其易磁化轴处于垂直于膜面方向,垂直矫顽力和面内矫顽力分别为634和302kA/m;真空退火后[Ag/FePt]10多层膜表现为面内磁晶各向异性,550℃退火60min后[Ag 2.8nm/FePt 2nm]10多层薄膜垂直矫顽力和面内矫顽力分别为309和778kA/m,并且随着Ag层的加入,部分FePt颗粒已经被Ag原子隔开了,颗粒之间的交换耦合作用变弱了.     

硬磁/反铁磁交换耦合对反铁磁FeMn稳定性影响研究

采用磁控溅射方法在SiO2基体上制备了FePt/FeMn/NiFe/Ta多层膜样品,通过FeMn/NiFe双层膜交换偏置的变化研究了硬磁FePt不同磁化状态对反铁磁层FeMn的影响。实验表明,磁化了的L10相FePt能使FeMn在较薄的情况下(4.5nm)对NiFe产生比较强的交换偏置;而未被磁化的FePt对FeMn/NiFe交换偏置影响并不明显。认为更薄的反铁磁层对另外的铁磁层产生交换偏置是由于硬磁与反铁磁的界面交换耦合作用能增强反铁磁的稳定性。     

不同工艺条件对FePt-AlN纳米薄膜磁性影响的研究

利用磁控溅射方法,在加热的单晶MgO(100)基片上制备了以AlN为母体的FePt薄膜,再经过真空热处理后,得到了具有垂直磁各向异性且无磁交换耦合作用的FePt薄膜;同时,研究了掺杂AlN含量、薄膜的厚度及退火温度对薄膜的磁性能的影响.结果表明,非磁性相AlN的添加能够降低磁交换耦合作用,但同时也会破坏薄膜的垂直磁各向异性.降低薄膜厚度,有利于改善薄膜的垂直磁各向异性,FePt-AlN薄膜的厚度为6nm且掺杂AlN含量达到40%时,经650℃热处理1h后薄膜具有良好垂直磁各向异性、适中矫顽力且无磁交换耦合作用.     

Ag衬底层对FePt薄膜结构和性能的影响

采用磁控溅射方法在自然氧化的单晶Si(100)衬底上制备了双层结构的FePt-X/Ag(X=Ag或Pt)薄膜.以20nm厚的Ag做衬底,可以制备出易磁化轴垂直基片的FePt合金薄膜;Ag在FePt薄膜中优先团聚,不利于控制FePt晶粒的长大,调整Pt的含量可以控制热处理过程中FePt薄膜的晶粒尺度;通过XRD、TEM、VSM对薄膜样品的结构、晶粒尺寸的观察和磁性检测,我们认为FePt合金薄膜有序化转变的最佳热处理温度在400℃;经过500℃热处理,薄膜软硬磁耦合较好,晶粒尺寸约为100nm,有最大的矫顽力1.04×106A/m.     

c-AlN的生长对AlN/(Ti,Al)N纳米多层膜力学性能的影响

采用反应磁控溅射制备了具有不同调制周期的AlN／(Ti，Al)N纳米多层膜，研究了亚稳相立方氮化铝(c—AlN)在纳米多层膜中的生长条件及其对薄膜力学性能的影响．结果表明：在小调制周期下AlN以立方结构存在，并与(Ti，Al)N层形成同结构共格外延生长，使纳米多层膜产生较大的品格暗变．与此相应，AlN／(Ti，Al)N纳米多层膜硬度和弹性模量随调制周期的减小呈单调上升的趋势，当调制周期小于8～10nm时其增速明显增大，并在调制周期为1．3nm时达到最高硬度29．0GPa和最高弹性模量383GPa,AlN／(Ti，Al)N纳米多层膜的硬度和弹性模量在小调制周期时的升高与亚稳相c—AlN的产生并和(Ti，Al)N形成共格结构有关。     

纳米级FePt/Fe多层膜中微结构的优化与耦合效应

本文用磁控溅射法制备了一系列不同厚度Fe层的FePt/Fe多层膜,经过热处理后成功地制备出具有fct结构的FePt有序相和exchange-spring型永磁体.研究了不同热处理条件下多种膜层厚度与FePt/Fe多层膜结构、磁性及其内在关系,并探讨了FePt/Fe多层膜铁中的磁耦合失效问题.观察了不同热处理条件和层厚的FePt/Fe多层膜的结构变化过程,包括结构相变、有序度和晶粒度.研究了其磁性能随结构变化的规律,发现了耦合失效的模式.     

软硬磁层厚度对L1_0-FePt/Fe交换耦合双层膜磁性能的影响:模拟与实验

首先采用磁控溅射的方法在玻璃基片上沉积不同硬/软磁层厚度的FePt/Fe交换耦合双层膜,结合实验结果,依据微磁学理论对L10-FePt/Fe交换耦合双层膜的磁性能进行研究。结果显示,当FePt硬磁层厚度固定20nm,随Fe软磁层厚度的增加双层膜矫顽力逐渐减小。当Fe软磁层厚度超过其畴壁宽度时,其对矫顽力的影响大幅度降低。Fe软磁层厚度固定为10nm,FePt硬磁层厚度发生变化时,由于理论和实际双层膜界面的不同,导致对双层膜成核场起作用的临界硬磁层厚度也不一样。     

FePtAg颗粒薄膜的制备及性能表征

采用磁控溅射方法在自然氧化的单晶Si(100)基片上制备了FePtAg颗粒薄膜.通过调整靶材的溅射速率、控制掺杂Ag元素的含量,选择适当的热处理工艺,获得了晶粒尺寸约5nm,分布均匀的FePt颗粒薄膜,矫顽力为3.2×105A/m,磁滞回线具有良好的矩形度,薄膜内部无交换耦合作用,适用于高密度磁记录介质材料.     

TiN/AlN纳米多层膜的调制周期及力学性能研究

采用一种新型的离子束辅助非平衡反应磁控溅射设备制备了TiN/AlN纳米多层复合膜.采用XRD衍射、TEM、显微硬度计和干涉显微镜对TiN/AlN纳米多层膜的微结构和力学性能进行了表征.结果表明TiN/AlN多层膜有良好的周期;调制结构影响薄膜的择优取向,薄膜整体表现出硬度增强的效果,硬度随调制周期的变化而变化并在调制周期为7.5 nm时达到最大值.     

Effects of Ag Layer on the Structure and Magnetic Properties of FePt:AlN Composite Films

[AlN/FePt] 10 , [AlN/FePt] 10 /Ag and Ag/[AlN/FePt] 10 thin films were deposited by magnetron sputtering onto 7059 glass substrates, then were annealed at 550 °C for 30 min. It is found that introducing non-magnetic Ag underlayer can improve the ordering and (001) preferred orientation of FePt grains. Furthermore, the (001) texture of FePt grains increases with increasing Ag underlayer thickness. However, with Ag top layer given, it can only be observed that the ordering of FePt grains was promoted.     

Effect of AlN layer thickness on structure and magnetic properties of FePt/AlN multilayers

FePt (50 nm) and [FePt(xnm)/AlN(1, 2, 3 nm)]₁₀ (x=2, 3 nm) films were prepared by RF magnetron sputtering technique, then were annealed at 550 °C for 30 min. This work investigates the effect of AlN layer thickness on structure and magnetic properties of FePt/AlN multilayers. Superlattice (0 0 1) peaks can be found in the grazing incidence X-ray diffraction of FePt and [FePt (3 nm)/AlN (1, 2, 3 nm)]₁₀ films, which indicate that the FCC phase has been partially transformed into ordered L1₀ phase. Compared with the single layer FePt film, superlattice (0 0 1) peaks of FePt/AlN multilayers are weak and wide, which indicates that the introducing of AlN hinders the growth of FePt particle, and also shows the introducing of AlN is not beneficial to the transformation from FCC phase to L1₀ phase. In addition, the low-angle XRD spectra show the layered structure of FePt/AlN has been broken after annealing. The coercivities, particle size, intergrain exchange interactions of FePt/AlN films are decreased with increasing AlN layer thickness.     

Low temperature ordering of FePt films by in-situ heating deposition plus post deposition annealing

FePt thin films with 40 nm thickness were prepared on thermally oxidized Si (001) substrates by dc magnetron sputtering at the nominal growth temperature 375 °C. The effects of annealing on microstructure and magnetic properties of FePt thin films were investigated. The as-deposited FePt thin films show soft magnetic properties. After the as-deposited FePt thin films were annealed at various temperatures and furnace cooled, it is found that the ordering temperature of L1₀ FePt phase could be reduced to 350 °C. For FePt thin films annealed at 350 °C, the in-plane and out-of-plane coercivities of the films increased to 510 and 543 kA/m, respectively, and the films had hard magnetic properties. A highly (001) orientation was obtained, when FePt thin films were annealed at 600 °C. And the hysteresis loops of FePt thin films annealed at 600 °C show out-of-plane magnetic anisotropy.     

The effect of thickness on the texture and magnetic properties of single-layered FePt films by rapid thermal annealing

The single-layered FePt films with thickness in the range of 5 to 50 nm are deposited directly on Si(100) substrate without underlayer, then post annealed at 700 degrees C by rapid thermal annealing (RTA) technique. As the film thickness of FePt is over 20 nm, the L1(0) FePt(111) preferred orientation is presented and tended to in-plane magnetic anisotropy. However, the L1(0) FePt(001) texture is obtained and exhibited perpendicular magnetic anisotropy as the film thickness is decreased to 10 nm. Its perpendicular coercivity (Hc(perpendicular)), saturation magnetization (Ms) and perpendicular squareness (S(perpendicular)) are 14.8 kOe, 795 emu/cm3 and 0.79, respectively. On the other hand, both the grain size and domain size of FePt film decrease with decreasing the film thickness of FePt. The grain size for 10-nm FePt film is as small as 9.7 nm with domain size of 123 nm, which reveal its significant potential as perpendicular magnetic recording media for ultra high-density recording.     

纳米AlN/BN复相陶瓷的显微结构与性能

采用尿素与硼酸的反应, 在850℃氮气氛下, 合成了纳米BN?包裹的AlN粉料, 通过TEM观察, BN粒径为20～30nm. 通过热压烧结制备出纳米h-BN包裹的AlN/BN 复相陶瓷, SEM/TEM观察, h-BN呈细针状, 针长100～400nm, 针宽为30～50nm. 当h-BN含量≥20wt%时, 其硬度显著降低, 提高了材料的可加工性能.     

Lattice Expansion by Adding Oxygen to Control Crystallographic Orientations in Chemically Ordered L10 FePt Films

We fabricated L1₀ FePt thin films by sputtering in reactive oxygen on polycrystalline glass substrates, and we investigated the magnetic properties and crystallographic orientations of the films. Oxygen addition during the FePt deposition promoted heteoroepitaxial growth by decreasing the lattice misfit with the Ag underlayer. In an oxygen/argon ratio of 1.5-3.0 vol.%, the in-plane lattice parameter of the FePt films expanded, and the lattice misfit with the Ag underlayer decreased from 6.3 to 3.9% in the as-deposited state, as determined by grazing incidence X-ray diffraction (GIXRD). Annealing at 700degC for 1 min produced a heteroepitaxially grown L1₀ (001) texture with a large out-of-plane coercivity of 8.8 kOe and a nucleation field of kOe. Transmission electron microscopy showed that average grain size in the as-deposited films was about 4-5 nm and was in the range of 10-15 nm in the annealed films, indicating that there was some grain growth.     

原位合成TiO2纳米管阵列及其光催化性能研究

采用液相沉积法(LPD), 以阳极氧化铝(AAO)为模板, 原位合成高度有序的TiO₂纳米管薄膜材料. 实验结果表明, 经过400℃热处理后, 制备的TiO₂纳米管为锐钛矿相, 长度达5μm, 管外径为150nm左右, 管壁厚为25nm左右. 热处理后的TiO₂薄膜具有良好的光催化降解甲基蓝的性能, 即经过120min卤灯照射后, 甲基蓝被完全降解.     

Sintering Effect of Annealed FePt Nanocrystal Films Observed by Magnetic Force Microscopy

Chemically synthesized FePt nanocrystals can exhibit room temperature ferromagnetism after being annealed at temperatures above 500degC. In thick films composed of FePt nanocrystals, the coercivity can be quite large. However, the coercivity of thin films has been found to decrease significantly with decreasing thickness, to the point that ferromagnetism at room temperature is lost. We studied 12 to 55 nm thick films by using magnetic force microscopy (MFM) under external applied fields. We made smooth films by spin casting 4-nm-diameter FePt nanocrystals and annealing them at 605degC-630degC. Thin FePt films showed lower coercivity than thick films. To help interpret the MFM images, we obtained complementary magnetic and structural data by superconducting quantum interference device (SQUID) magnetometry, transmission electron microscopy (TEM), and X-ray diffraction. We conclude that the magnetic properties of these films are strongly affected by nanocrystal aggregation that occurs during annealing     

交换耦合双层膜NiO/Ni81Fe19的基片温度效应研究

用射频磁控溅射方法在不同基片温度下玻璃基片上分别制备NiO单层膜、NiFe单层膜和NiO／NiFe双层膜,研究了不同基片温度对膜的磁性能的影响．用振动样品磁强计（VSM）分析了膜的磁特性,结果表明：基片温度260℃时淀积的NiFe膜矫顽力Hc为184A·m^－1,小于室温淀积NiFe膜的H_c（584A·m^－1）,且磁滞回线的矩形度更好．室温下淀积NiO（50nm）／NiFe（15nm）双层膜的Hc为4000A·m^－1,交换耦会场（H_EX）仅为1600A·m^－1,磁滞回线的短形度很差,而260℃时淀积的双层膜的Hc下降到3120A·m^－1,H_EX却增大为4640A·m^－1,同时磁滞回线的矩形度也得到改善,其截止温度T_B高达230℃．X射线衍射（XRD）分析了膜的织构,结果表明：室温下淀积NiO膜呈现（220）织构,而260℃时淀积NiO膜呈现（111）织构;室温和260℃淀积的NiFe膜都呈（111）织构,但后者晶粒比前者大．     

Self-assembled nano-size FePt islands for ultra-high density magnetic recording media

To find a method to form nano-size FePt alloy for ultra-high density magnetic recording media, this work concentrated on the formation mechanisms of nano-island FePt films on amorphous glass substrates. FePt films of different thicknesses (1-10 nm) were deposited on amorphous glass substrates and post-annealed at 700 °C for 10 and 30 min. The configuration of the film changed during the annealing process due to the surface energy difference between the glass substrate and FePt alloy. Investigation of the microstructures and magnetic properties of the ordered L1₀ FePt films revealed that the 1 nm FePt film annealed at 700 °C for 10 min had perpendicular magnetic anisotropy and good reproducibility of forming well-separated FePt nano-size islands for ultra-high density magnetic recording media.     

[101]取向Li掺杂ZnO薄膜光学性能的研究

采用射频磁控溅射法在玻璃衬底上制备了[101]取向的Li:ZnO薄膜, 研究了该薄膜的光学性能随热处理温度变化的规律. 结果表明, 399nm的发光峰是由Li的杂质能级引起; 与[002]取向的薄膜相比, 未经热处理的[101]薄膜其光学带隙大, 且出现了380nm附近的带边发射(NBE) 峰; 在560～580℃热处理下, 其晶胞变小、光学带隙变窄、360nm 左右的带间发光峰红移; 当热处理温度升至610℃时, 薄膜中再次出现380nm的NBE峰.