Rt／Si 快速热退火固相反应制备超薄PtSi薄膜

对Ｐｔ／Ｓｉ快速热退火固相反庆形成超薄ＰｔＳｉ薄膜进行研究。溅射Ｐｔ薄膜的厚度在５－－２０ｍｍ之间，用ＡＥＳ，ＸＲＤ，ＲＢＳ，ＳＥＭ等分析测试手段对固相反应ＰｔＳｉ薄膜的结构特性进行观测，并对ＰｔＳｉ／ｎ－Ｓｉ肖特基结电学性能进行了测试。实验结果表明，５５０－－６００快速退火有利于Ｐｔ／Ｓｉ反应形成性能优良的ＰｔＳｉ／Ｓｉ肖特基热垒接触。     

Pt／Si快速热退火固相反应制备超薄PtSi薄膜

对Ｐｔ／Ｓｉ快速热退火固相反应形成超薄ＰｔＳｉ薄膜进行研究。溅射Ｐｔ薄膜的厚度在５～２０ｎｍ之间，用ＡＥＳ，ＸＲＤ，ＲＢＳ，ＳＥＭ等分析测试手段对固相反应Ｐｔｓｉ薄膜的结构特性进行观测，并对ＰｔＳｉ／ｎ－Ｓｉ肖特基结电学性能进行了测试。实验结果表明，５５０～６００℃快速返火有利于Ｐｔ／Ｓｉ反应形成性能优良的ＰｔＳｉ／Ｓｉ肖特基势垒接触。     

硅表面氧化膜的X光电子谱及部分参数固定法曲线拟合

本文用Ｘ光电子谱及部分参数固定曲线拟合方法分析了热生长硅氧化膜和硅的自然氧化膜中硅和氧的结合状态，发现两者均不是单一的ＳｉＯ２，硅在以上两种氧化膜中共有四种氧化状态，即Ｓｉ＋１，Ｓｉ＋２，Ｓｉ＋３和Ｓｉ＋４，它们相对于体Ｓｉ２ｐ，峰的化学位移分别为０．８５，２．３５，３．５５和４．６０ｅＶ．在硅的初期氧化阶段无Ｓｉ＋４成分出现．     

PtSi薄膜超薄化及连续性研究

减薄膜厚有利于提高ＰｔＳｉ红外探测器的量子效率。本文研究了膜厚减薄工艺对薄膜连续性的影响。用ＸＲＤ观察物相,ＳＥＭ、ＴＥＭ研究薄膜连续性,并给出理论解释,实验表明用混合生长（Ｓ－Ｋ）模式能形成超薄连续薄膜。     

RTP改善超薄SiO2膜特性的研究

超薄ＳｉＯ２膜经快速热处理后，电特性得到了改善，本研究用超薄ＲＴＰＳｉＯ２膜制作ＭＯＳ电容，ｈ－ＮＭＯＳＦＥＴ中介栅介质层及ＦＬＯＴＯＸ－Ｅ＾２ＰＲＯＭ中作隧道氧化层，取得了一些实验结果，从结果中可以看出具有实有价值。     

77K杜瓦瓶制冷铂硅线列红外CCD探测器组件

７７Ｋ杜瓦瓶制冷铂硅线列红外ＣＣＤ探测器组件何剑（电子工业部第四十四所重庆永川６３２１６３）本组件由１０２４位ＰｔＳｉ肖特基势垒线阵ＣＣＤ、杜瓦瓶和二次集成的ＣＣＤ外围驱动电路组成。它的研制成功，填补了国内空白，缩短了与国外的差距。本文介绍了ＰｔＳｉ...     

硅基红外焦平面阵列技术的新进展(Ⅰ)

主要介绍以硅为衬底的非本征硅、金属硅化物（Ｐｄ２Ｓｉ，ＰｔＳｉ和ＩｒＳｉ）肖特基势垒红外探测器、ＧｅｘＳｉ１－ｘ／Ｓｉ异质结内光电发射红外探测器、硅基红外图象传感器、硅微测辐射热计等红外探测器焦平面阵列的新进展     

Mo／SiO2软X射线多层膜的结构研究

本文用磁控射方法制备了几种Ｍｏ／ＳｉＯ２多层膜。在北京同步辐射装置（ＢＳＲＦ）的衍射站上测量了其氏角Ｘ射线衍射（ＸＲＤ）谱，并利用基于光学动力学理论的递推公式对低角Ｘ射线衍射谱进行了拟合，定量分析了膜层的周期结构和界面度以及界面度与层数、层厚的关系。同时用高分辩电子显微镜（ＨＲＥＭ）对一样品的截面进行了观察。     

CMOS／SIMOX和CMOS／BESOI的γ射线辐照特性比较

用薄膜ＳＩＭＯＸ（ＳｅｐａｒａｔｉｏｎｂｙＩＭｐｌａｎｔａｔｉｏｎｏｆＯＸｙｇｅｎ）、厚膜ＢＥＳＯＩ（ｆｆｅｎｄｉｎｇａｎｄＥｔｃｈ－ｂａｃｋＳｉｌｉｃｏｎＯｎＩｎｓｕｌａｔｏｒ）和体硅材料制备了ＣＭＯＳ倒相器电路，并用６０Ｃｏγ射线进行了总剂量辐照试验。在不同偏置条件下，经不同剂量辐照后，分别测量了ＰＭＯＳ、ＮＭＯＳ的亚阈特性曲线，分析了引起ＭＯＳＦＥＴ阈值电压漂移的两种因素（辐照诱生氧化层电荷和新生界面态电荷）。对ＮＭＯＳ／ＳＩＭＯＸ，由于寄生背沟ＭＯＳ结构的影响，经辐照后背沟漏电很快增大，经３００Ｇｙ（Ｓｉ）辐照后器件已失效。而厚膜ＢＥＳＯＩ器件由于顶层硅膜较厚，基本上没有背沟效应，其辐照特性优于体硅器件。最后讨论了提高薄膜ＳＩＭＯＸ器件抗辐照性能的几种措施。     

电镜硅锂X－射线能谱仪的制备及修理技术

第一套电镜Ｓｉ（Ｌｉ）Ｘ射线探测器已经制成，探测器包括灵敏面积为２０ｍｍ￣２Ｓｉ（Ｌｉ）晶体、低温场效应晶体管、光反馈前置放大器、具有７．５μ铍窗的低温装置和７．５升液氮杜瓦瓶。对￣（５５）Ｆｅ５．９ｋｅＶ射线，能量分辨率为１５２ｅＶ。此外报道ＴＲＡＣＯＲ电镜Ｓｉ（Ｌｉ）Ｘ射线探测器修理的结果，修理后能量分辨率为１４８ｅｖ，与原来的结果一样。每天正常的液氮消耗量少于１立升。     

电阻法测试超薄膜厚度的研究

常规方法测试超薄膜的厚度存在很大困难。介绍一种测试约4nm PtSi厚度的电阻率法。先制备厚度约40nm的薄膜,测试出薄膜电阻率,再考虑超薄膜的表面效应、尺寸效应,推导出超薄膜电阻率与薄膜电阻率的关系式,测试超薄膜方电阻,计算出超薄膜厚度。给出了TEM晶格像验证结果,误差小于6%。实验表明该方法简单易行,对其他超薄膜厚度的测试提供了参考。     

Effect of arsenic implantation on electrical characteristics ofLPCVD WSi2/n-Si Schottky contacts

Electrical characteristics of As-implanted low-pressure chemical vapor deposition (LPCVD) WSi₂/n-Si Schottky barriers are reported. It is shown that As implantation results in a significant Schottky-barrier lowering and an increase in the diode ideality factor n. Silicide annealing prior to As implantation is more effective in reducing Schottky-barrier height. Nearly ohmic characteristics were obtained for As-implanted LPCVD WSi₂ Schottky barriers. Arsenic implanted into high-temperature annealed silicide films was more effective in reducing the effective Schottky-barrier height. Detailed SIMS analysis indicated higher As concentration at the silicide/silicon interface when implanted into high-temperature-annealed silicide films     

The role of stress distribution at the film/barrier interface in formation of copper silicides

Silicide formation in thin Cu films subjected to thermal annealing has been investigated by atomic force microscopy, scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. It is shown that the periodic stress distribution at the film/barrier interface under elevated temperatures can govern the character of copper silicide formation. The effect of barrier layer material and substrate orientation on the distribution density and shape of Cu₃Si crystallites has been studied.     

单原子层沉积原理及其应用

传统的薄膜材料制造方法已不能满足未来元器件和集成电路制造的要求,原子层沉积技术由于具有精确的厚度控制、沉积厚度均匀性和一致性等特点,已成为解决微电子制造相关超薄膜材料制造问题的主要解决方法之一,也将成为新的纳米材料和纳米结构的制造方法之一。综述了原子层沉积技术的原理、技术设备要求和应用。     

The barrier characteristics on silicon of Tixw1-x films of different compositions

An Aluminum/Barrier Layer/Silicide/Silicon contact system is an advanced metallization system used in VLSI. TiW alloy film is one of the barriers that has widely been used in the fabrication of bipolar integrated circuits. In this paper, the barrier characteristics of TiW alloy films of different compositions were studied by means of Auger Electron Spectroscopy (AES). The results indicate that TiW alloy film is indeed an effective barrier to prevent Al-Si interdiffusion if the concentration of Ti is less than 30 at.%.     

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi₂) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi₂ films. A Ge⁺ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge⁺ ion mixed and unmixed thin CoSi₂ layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (<50 nm) CoSi₂ preparation. A comparison of the plan-view and cross-section TEM micrographs of the ion-beam mixed and unmixed CoSi₂ films reveals that Ge⁺ ion mixing (45 keV, 1 × 10¹⁵ cm⁻²) produces homogeneous silicide with smooth silicide-to-silicon interface.     

Structural studies of Langmuir-Blodgett films: technology and analysis

Using the Langmuir-Blodgett technique, ultra-thin films of organic molecules can be deposited on suitable substrates with a high degree of precision over the individual layer thickness. The electronic and optical properties of these films are closely related to the molecular orientation within the layer. Some of the techniques used to analyse the structure of the floating and transferred layers are discussed in this short review, with special reference to phthalocyanine films     

Effect of deposition power in fabrication of highly efficient CdS:O/CdTe thin film solar cell by the magnetron sputtering technique

Polycrystalline II–VI semiconductor materials such as oxygenated CdS have a wide and tunable band gap (≥2.5 eV) which plays an important role in increasing the light absorption capacity of CdTe absorber. In this study, the ultra-thin CdS:O and CdTe films were deposited by the sputtering technique and the optimum condition of deposition power is investigated. The prepared ultra-thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS), UV–vis spectrometry, Hall Effect and current–voltage measurements techniques. The complete cell was then fabricated by the sputtering technique with a novel configuration of ‘glass/FTO/ZnO:Sn/CdS:O/CdTe/C:Cu/Ag’. To avoid the pin hole effect, the high resistive ZnO:Sn layer was deposited as a buffer layer in between the FTO and CdS:O films. It has been observed that the cell performance parameters are found to be varied with deposition power of CdO:S films and an overall conversion efficiency of 10.27% was achieved.     

Dissociation of sexithiophene on Al(1 1 1) surface

The growth of sexithiophene ultra-thin films on an atomically clean Al(1 1 1) surface has been investigated by angle-resolved ultraviolet photoemission spectroscopy. Although sexithiophene on Al(1 1 1) represents a weakly interacting system, sexithiophene molecules were found to dissociate even below room temperature, presumably via reactive sites. The mechanism is distinctly different to that claimed on the reverse system, i.e. aluminum evaporated on thiophene oligomers films, where isolated aluminum atoms were reported to covalently bond to thiophene rings and thus dramatically affect the molecule geometry and the conjugation. The effect of the insertion of an ultra-thin separator film of sexiphenyl, on the dissociation of sexithiophene was also examined.     

Fabrication of PRTs and analysis of characteristics

Platinum thin films have been prepared on Al/sub 2/O/sub 3/ substrates by DC magnetron sputtering. Platinum resistance thermometers have been fabricated and their characteristics analysed. We used a UV laser (wavelength 355 nm) to adjust the Pt thin films temperature sensors to 100 /spl Omega/ at 0/spl deg/C. As result of setting the Pt resistors to the target value of 109.73 /spl Omega/ at 25/spl deg/C, 82.3% of total resistors had a tolerance within /spl plusmn/0.03 /spl Omega/ and 17.7% were within /spl plusmn/0.06 /spl Omega/ of A-class tolerance according to DIN EN 60751. The PRTs which were fabricated in this research had excellent characteristics such as high accuracy, long-term stability, wide temperature range, good linearity, good repeatability and rapid response time.