基于石英衬底的16通道二氧化硅可调复用器/解复用器的单片集成

本文是关于可调复用器/解复用器的单片集成,它由一个16通道200 GHZ的二氧化硅阵列波导光栅和一组马赫增德尔干涉型热光可调光衰减器阵列构成。该集成器件是基于石英衬底的,与基于硅衬底的器件相比,省去了沉积下包层的工艺步骤,并且降低了器件功耗。该集成器件的插入损耗是-5 dB,串扰小于-22 dB。在衰减为20 dB的时候每个通道的功耗只有110 mW。     

Integrated 1.3 mu m/1.55 mu m wavelength multiplexer and 1.8 splitter by ion exchange in glass

Integration of a 1.3 mu m/1.55 mu m wavelength multiplexer and a 1/8 splitter in a single glass substrate is demonstrated by potassium and silver double-ion exchange. The device is composed of a nonsymmetric Mach-Zehnder interferometer for wavelength multiplexing and symmetrical Y-junctions for achromatic splitting. The facet-to-facet excess loss is less than 2.5 dB.<>     

（英）D波段InP基高增益、低噪声放大芯片的设计与实现

利用90-nm InAlAs/InGaAs/InP HEMT工艺设计实现了两款D波段（110~170 GHz）单片微波集成电路放大器。两款放大器均采用共源结构,布线选取微带线。基于器件A设计的三级放大器A在片测试结果表明：最大小信号增益为11.2 dB@140 GHz,3 dB带宽为16 GHz,芯片面积2.6×1.2 mm2。基于器件B设计的两级放大器B在片测试结果表明：最大小信号增益为15.8 dB@139 GHz,3dB带宽12 GHz,在130~150 GHz频带范围内增益大于10 dB,芯片面积1.7×0.8 mm2,带内最小噪声为4.4 dB、相关增益15 dB@141 GHz,平均噪声系数约为5.2 dB。放大器B具有高的单级增益、相对高的增益面积比以及较好的噪声系数。该放大器芯片的设计实现对于构建D波段接收前端具有借鉴意义。     

An all-fiber dense wavelength-division multiplexer/demultiplexerusing photoimprinted Bragg gratings

A wavelength multiplexing/demultiplexing device is fabricated and used to drop/insert a single wavelength channel from/into a multiple wavelength transmission link with 100 GHz channel-spacing at 1550 nm. The device consists of an all-fiber Mach-Zehnder interferometer with photoinduced Bragg gratings. The following performances were measured: extraction/coupling efficiency =99.4%, excess loss <0.5 dB, adjacent channel-isolation >20 dB, and return loss >23 dB     

New integrated optical ring resonator in glass

A new integrated optical ring resonator using a four-port nonsymmetric Mach-Zehnder interferometer as an input/output coupler is demonstrated. The device is fabricated in a glass substrate by the double-ion-exchange process. A finesse of 5 at lambda =1.523 mu m is measured. Propagation losses of 0.17 dB/cm in the ring waveguide are estimated.<>     

X波段及DBS接收用PHEMT单片低噪声放大器

报道了X波段及DBS接收用单片低噪声放大器的研制结果。利用CAD软件对单片电路进行优化设计，设计工作包括MBE材料、PHEMT器件和单片电路三部分。在研制过程中，开展了关键工艺的专题研究。研究结果为：单级单片放大器在10：5－11．6GHz范围内，NF≤1．82dB，G≥7.72dB；在11．7－12．2GHz范围内，NF≤1．80dB，G≥6．8dB；双级放大器在10．4－11．1GHz范围内，NF≤1．96dB，G≥15．3dB，最低噪声系数为1．63dB，最高增益为16．07dB。     

法布里-珀罗型光学梳状滤波器的设计

提出了一种新型光学梳状滤波器 ,它由双Gires Tournois谐振腔代替Michelson干涉仪的两个全反射镜构成。基于Michelson干涉原理 ,给出了零畸变、高信道隔离度、宽平坦带宽、高一致性、结构简单、性能稳定的光学梳状滤波器的设计原理。设计了信道间隔为 5 0GHz,畸变 <0 0 5dB ,1dB带宽大于 0 38nm ,相邻信道间隔离度大于 2 3dB的光学梳状滤波器     

Polarization independent dilated WDM cross-connect on InP

A four wavelength 2×2 optical wavelength-division-multiplexed cross-connect with dilated switches is reported. The device is monolithically integrated on InP and consist of two eight-channel PHASAR's combined with 16 electrooptic Mach-Zehnder interferometer switches. On-chip loss is less than -17 dB and crosstalk is better than -20 dB     

Simultaneous all-optical frequency downconversion technique utilizing an SOA-MZI for WDM radio over fiber (RoF) applications

Simultaneous all-optical frequency-downconversion technique utilizing a semiconductor optical amplifier Mach-Zehnder interferometer (SOA-MZI) is experimentally demonstrated, and its application to a wavelength-division-multiplexing (WDM) radio over fiber (RoF) uplink is proposed. The conversion efficiencies from 22.5 (f/sub RF/) to 2.5 GHz (f/sub IF/=f/sub RF/-2f/sub LO/) are in the range from 1.5 to 3 dB for the optical RF wavelength between 1548 and 1558 nm. Error-free simultaneous all-optical frequency downconversion of the two WDM RoF upstream channels that carry 155-Mb/s differential phase-shift keying data at 22.5 GHz to an optical intermediate frequency signal having the frequency of 2.5 GHz with the power penalty less than 0.1 dB at the bit error rate of 10/sup -8/ is achieved.     

Flat-top silica-based arrayed waveguide grating with 40-channels

A wavelength multiplexer or demultiplexer plays ani mportant role in all wavelength division multiplexing( WDM) system.Silica-basedarrayed waveguide gratings(AWGs) offer attractive featuresinthis area due to theadvantage of large output channels and lowlo…     

Tunable Mach-Zehnder polarization splitter using height-tapered Y-branches

A tunable TE/TM polarization splitter, based on a Mach-Zehnder interferometer with an electrooptic switch, is demonstrated in GaAs-AlGaAs. Symmetric and asymmetric Y-branches employing height-tapered waveguides are used to achieve power splitting and mode sorting, respectively, in the interferometer. The device has an extinction ratio of /spl sim/20 dB and an excess loss less than 1.5 dB for both TE and TM polarized light. The device can be reconfigured by tuning the switching voltage for operation at both 1.3- and 1.55-pm wavelengths.     

A High-Performance Ultracompact Optical Interleaver Based on Double-Ring Assisted Mach–Zehnder Interferometer

We present an ultracompact and high-performance optical interleaver based on a microring assisted Mach-Zehnder interferometer using an ultrahigh-index-contrast waveguide (17% Delta). The device, a 100/200-GHz interleaver at 1.55-mum region, exhibits flat and nearly square passband and better than -30-dB stopband extinction ratio. Fiber-to-fiber loss is -2.2 dB. Passband bandwidth is 90 and 121 GHz at -1 and -20 dB, respectively. The dimension of this interleaver chip is 12times1 mm. Design optimization is also discussed for further performance improvement.     

Optimization of Packaging Design of TWEAM Module for Digital and Analog Applications

Packaging technologies for a broadband and narrowband modulator with a traveling wave electroabsorption modulator (TWEAM) device were developed. In developing a broadband modulator, the effects of the device and packaging designs on the broadband performance were investigated. The optimized designs were obtained through a simulation with the result that we developed a broadband modulator with a 3 dB bandwidth of 38 GHz in the electrical‐to‐optical (E/O) response, an electrical return loss of less than ?10 dB at up to 26 GHz, an rms jitter of 1.832 ps, and an extinction ratio of 5.38 dB in a 40 Gbps non‐return to zero (NRZ) eye diagram. For analog application, the effect of the RF termination scheme on the fractional bandwidth was studied. The microstrip line with a double stub as a matching circuit and a laser trimming process were used to obtain an S11 of ?34.58 dB at 40 GHz and 2.9 GHz bandwidth of less than ?15 dB.     

DC and microwave characteristics of sub-0.1-μm gate-lengthplanar-doped pseudomorphic HEMTs

Analytical modeling of these very-short-channel HEMTs (high-electron-mobility transistors) using the charge-control model is given. The calculations performed using this model indicate a very high electron velocity in the device channel (3.2±0.2×10⁷ cm/s) and clearly demonstrate the advantages of the planar-doped devices as compared to the conventional uniformly doped HEMTs. Devices with different air-bridged geometries have been fabricated to study the effect of the gate resistance on the sub-0.1-μm HEMT performance. With reduced gate resistance in the air-bridge-drain device, noise figures as low as 0.7 and 1.9 dB were measured at 18 and 60 GHz, respectively. Maximum available gains as high as 13.0 dB at 60 GHz and 9.2 dB at 92 GHz, corresponding to an f_max of 270 GHz, have also been measured in the device. Using the planar-doped pseudomorphic structure with a high gate aspect-ratio design, a noise figure of less than 2.0 dB at 94 GHz is projected based on expected further reduction in the parasitic gate and source resistances     

基于XeF_2硅刻蚀工艺的低阻硅衬底低损耗共面波导

在低阻硅(1~10Ω.cm)衬底上采用XeF2硅腐蚀工艺成功制备了长度为2 mm、结构尺寸为w/s=40/60μm间断悬浮和全悬浮两种结构的共面波导。SEM照片显示器件释放后的悬浮结构未出现粘附或破裂现象。通过WYKO三维形貌观察得到两种结构共面波导悬浮信号线最大翘曲量分别为10μm和16μm。微波性能测试结果表明两种悬浮结构共面波导在1~10 GHz频率范围内插入损耗分别低于4.5 dB/2 mm和3.2 dB/2 mm,远小于制作在低阻硅衬底上的普通共面波导插入损耗9.4 dB/2 mm;在1~3 GHz频率范围内插入损耗分别低于0.54 dB/2 mm和0.17 dB/2 mm,小于制作在高阻硅(1 400~1 500Ω.cm)衬底上普通共面波导的插入损耗0.55 dB/2 mm。     

Silica-based integrated optic Mach-Zehnder multi/demultiplexerfamily with channel spacing of 0.01-250 nm

A Mach-Zehnder (MZ) interferometer design is presented for application to wavelength-division multiplexed/frequency division multiplexed (WDM/FDM) systems. A variety of integrated-optic devices with low loss and low crosstalk, using silica-based waveguides, are demonstrated. MZ interferometers operate as multi/demultiplexers or frequency-selection switches. The channel spacing is determined by the waveguide arm length difference, and a spacing range of 1 GHz to 36 THz, corresponding to a wavelength spacing of 0.008-250 nm, is achieved. The devices for the WDM region have low fiber-to-fiber loss of 0.5 dB, and the devices for the FDM region have higher losses of 2-5 dB. Crosstalk of less than -15 dB was obtained for all the devices. A 5-GHz-spaced 16-channel frequency selection switch and a 10-GHz-spaced eight-channel multi/demultiplexer were also fabricated with a total loss of 5 dB and total crosstalk of -10 dB or less     

基于双耦合器的全光纤不等带宽波长交错滤波器的设计

为提高波长交错滤波器(interleaver)带宽的利用 率,提出了基于一字型3×3和2×2光纤耦合器组成 全光纤马赫-曾德尔干涉仪(MZI)型不等带宽波长交错滤波器(interleaver)的设计方案。运 用光纤传输理论 和矩阵理论,得到滤波器输出谱的表达式;依据傅里叶级数的理论,优化选择器件的结构参 数;数值 模拟分析了器件的输出特性。结果表明:两个耦合器的耦合系数和光纤干涉臂长差取一些定 值时,器 件主要的两路输出带宽不等,它们的3dB带宽分别为31.5和 65.6GHz,满足不同传输速率10和40Gbit/s对带宽的要求,较等带宽interle aver有更高的利用率;通过分析器件结构参数对输出谱的影 响,发现器件具有一定的抗偏差能力;与普通的级联MZI型interleaver相比,新型器件的优 点是耦合 器少,在实际制作时可准确控制和检测耦合器的分光比,从而降低了制作难度。实验结果与 理论分析相吻合。     

Low conversion-loss fourth subharmonic mixers incorporating CMRC for millimeter-wave applications

Low conversion-loss millimeter-wave fourth subharmonic (SH) mixer designs are proposed in this paper. A millimeter-wave (35 GHz) fourth SH mixer with four open/shorted stubs is designed and measured. The conversion loss is less than 15 dB within a 2.4-GHz bandwidth. The minimum loss is 11.5 dB at the center frequency. By replacing two of the shunt stubs with a dual-frequency in-line stub consisting of newly developed compact microstrip resonating cells (CMRCs), the performance of the SH mixer is improved significantly. At 35 GHz, the conversion loss of this new fourth SH mixer is as low as 6.1 dB with a 3-dB bandwidth of 6 GHz. The conversion loss in the whole Ka-band (26.5-40 GHz) is less than 16 dB. The proposed fourth SH mixer incorporating with CMRCs provides a low-cost high-performance solution for RF subsystem design.     

8～16GHzGaAs单片宽带分布放大器

报道了８～１６ＧＨｚＧａＡｓ单片宽带分布放大器的设计与制作。单级ＭＭＩＣ电路采用三个栅宽为２８０μｍ的ＧａＡｓＭＥＳＦＥＴ作为有源器件，芯片尺寸为１．１ｍｍ×１．６ｍｍ。在８～１６ＧＨｚ频率范围，用管壳封装的两级级联放大器增益Ｇ＿ａ，为１１．３±１ｄＢ，噪声系数Ｆ＿ｎ＜６ｄＢ，输出功率Ｐ＿（１ｄＢ）＞１６ｄＢｍ。     

High-performance GaAs MESFETs with advanced LDD structure fordigital, analog, and microwave applications

GaAs MESFETs with advanced LDD structure have been developed by using a single resist-layered dummy gate (SRD) process. The advanced LDD structure suppresses the short channel effects, and reduces source resistance, while maintaining a moderate breakdown voltage. The 0.3-μm enhancement-mode devices exhibit a transconductance of 420 mS/mm, while the breakdown voltage of the depletion-mode device (V_th=-500 mV) is larger than 6 V. The standard deviation of the threshold voltage for 0.3-μm devices is less than 30 mV across a 3-in wafer. The 0.3-μm devices exhibit an average cutoff frequency of 47.2 GHz with a standard deviation of 1.3 GHz across a 3-in wafer. The cutoff frequency of a 0.15-μm device is as high as 72 GHz. D-type flip-flop circuits for digital IC applications and preamplifier for analog IC applications fabricated with 0.3-μm gate length devices operate above 10 Gb/s. In addition, the 0.3-μm devices also show good noise performance with a noise figure of 1.1 dB with associated gain of 6.5 dB at 18 GHz. These results demonstrate that GaAs MESFETs with an advanced LDD structure are quite suitable for digital, analog, microwave, and hybrid IC applications