用于低温多晶硅制备的线光束整形系统

设计了一套用于准分子激光低温多晶硅制备的线光束整形系统。系统中设置的光斑转换模块可使原始光束截面横纵倒置;利用扩束模块对原始光束的短轴进行准直,其扩束倍率可限定短轴光束尺寸,以配合短轴光束均匀模块的孔径;采用基于透镜阵列的长轴、短轴光束均匀模块可在提高光斑能量分布均匀性的同时,约束光斑尺寸;系统中设置了投影模块,可将光束投影于工件表面。为了实现系统中光学原件的精密定位,设计并加工了配套的机械调节结构;结合仿真实验,讨论了阵列单元的中心偏差及工作面的偏离对线光斑质量的影响。利用该线光束整形系统对自行研制的大能量准分子激光光源进行整形,实测的系统能量传递效率为33%,工件表面的光斑尺寸约为100mm×0.3mm,平均能量密度为470mJ·cm~(-2),长轴能量分布均匀度为93.95%,满足退火技术的要求。     

基于透镜阵列的眼科准分子激光光束整形与匀光系统

为提高屈光手术中准分子激光的能量利用率和光斑均匀性,设计了一套由双排透镜阵列和会聚透镜组成的准分子激光光束整形与匀光系统。借助近轴光学计算发现,通过调节双排透镜阵列的间距可以改变聚焦光斑的尺寸,通过调节透镜阵列与会聚透镜之间的距离可以改变光学系统的整体长度而不影响聚焦光斑的形态。利用光线追迹方法对该系统进行了模拟分析,在会聚透镜像方焦平面上获得了呈均匀分布的方形聚焦光斑,并给出了聚焦光斑尺寸随双排阵列透镜间距的变化过程。分析了接收面离焦对光斑尺寸和能量分布产生的影响,指出所设计的光束整形与匀光系统可以满足准分子激光屈光手术对激光光斑质量的要求。     

准分子激光微透镜整形均束装置

报道了248 nm准分子激光微透镜整形均束装置的研制结果。实际采集并拍摄了248 nm准分子激光光能量分布的彩色图像,使用Matlab分析处理该图像并提取了相关信息进行计算,通过光学软件ZEMAX模拟出符合实际准分子激光光能量分布的光源。通过分析空间光能量分布特征,设计并加工出一套适用于248 nm准分子激光的微透镜整形均束装置,且理论模拟和实际测试结果相吻合。248 nm准分子激光通过该光学系统整形均束后,可以在工作平面上得到一个约18 mm×18 mm的正方形光斑,光斑的能量均匀度误差(加工窗)在±2%以内,平顶因子为0.90,光能量通过率为85%左右,解决了248 nm准分子激光光斑形状不规则,且光斑能量分布不均匀的问题。该装置的研制成功,对于优质、高效地开展准分子激光微加工提供了具有自主知识产权的技术支撑。     

印刷电路板激光投影成像照明系统均匀性分析

针对351 nm波长的XeF准分子激光器,自行设计了用于高精度、高产率、大面积且常规抗蚀剂曝光的印刷电路板(PCB)激光投影成像照明系统.根据准分子激光的部分相干平顶高斯光束(PCFGB)理论模型,对微透镜阵列器(MLA)均束的衍射特性进行了理论分析.由PCFGB分布函数、稳定光强输出的衍射角和菲涅耳-基尔霍夫衍射积分公式,定量分析衍射效应对MLA均束的影响.理论计算表明,微透镜边缘发生菲涅耳衍射和微透镜产生的多光束干涉都能引起光振幅调制,只不过衍射产生的尖峰更明显地出现在光束边缘.同时,由数值积分得到的PCFGB曲线,发现9×9 MLA均束器既能保证多个微透镜产生光束叠加的均匀性,又最大程度地减少了衍射和多光束干涉效应.通过采取加正六边形光阑的方法,不仅能满足大面积无缝扫描光刻的需要,而且能剪裁由衍射引起的光束边缘尖峰.由ZEMAX光学设计软件模拟其效果,显示其加工窗不大于±2%.     

二维光束整形系统设计与仿真

针对高功率板条激光波前矫正的需要,基于ZEMAX软件对二维光束扩束整形系统进行设计和仿真。系统将初始尺寸为2.5 mm×28 mm,发散角为7 mrad×2 mrad矩形光束扩束整形为尺寸为40 mm×40.2 mm,发散角为0.54 mrad×1.3 mrad的方形光束。光束整形方向输出光学传递函数接近衍射极限,光束整形方向视场10 mrad时,两方向引入波像差之和为0.0186 λ,P-V值小于0.1 λ。     

一种减少光谱组束光程的方法

介绍了一种减少半导体激光器阵列光谱组束(SBC) 整体光程的方法,即将传统SBC中传输透镜的汇聚和准直 作用分离,分别由两个透镜实现。起汇聚作用的透镜将各个发光单元的光束聚焦到光栅上, 实现各个发光 单元空间上的叠加;起准直作用的透镜在光栅之后将组合后的光束进行准直,使各个发光单 元锁定在不同 的波长上。由于起汇聚作用的透镜不需要再对各个发光单元的光束进行准直,汇聚透镜与巴 条前端面的距 离不再需要严格的等于传输透镜的焦距,二者之间的距离可以很近,因此整体的光程可以近 似地减少1/2, 使利用长焦传输透镜压窄线宽时各发光单元有足够的反馈量,抑制串扰,有利于实现多个巴 条的SBC。 采用标准的半导体激光阵列,实现连续输出激光功率为49.42W,电 光转换效率为42.7%,光谱线宽为8.5nm, 输出光束水平方向光束质量M²_x=1.29(0.4mm×m rad),竖直方向光束质量M²=11.6(3. 6mm×mrad),两个方 向的光束质量都与单个发光单元的光束质量接近。     

高功率二极管激光器面阵四通抽运耦合系统

高功率二极管激光器面阵连续抽运1.1mmNd:YAG薄片,采用非球面柱透镜来准直二极管激光器线阵的快轴方向,然后用两个正交的柱透镜分别对快慢轴光进行成像,在薄片上形成10mm×7mm的抽运光斑。用球面反射镜将薄片未吸收的抽运光再一次通过Nd:YAG薄片,从而达到高的吸收效率,抽运光束在薄片上快慢轴方向上的束参数积分别为640mm·mrad和540mm·mrad。用CCD测得抽运光在薄片上的光强分布较均匀,面阵经非球面柱透镜和两个柱透镜后在10mm×7mm内的耦合效率为80.5%。     

激光光刻大面积扫描投影成像光学系统测试及评价

基于351nm XeF激光大面积投影成像光刻系统,通过对其光学系统包括光学照明系统和折叠投影系统进行光学性能测试。由激光经过柱面透镜、微透镜阵列均束器以及投影折叠物镜之后产生的能量及光束质量变化,将准分子激光光束均匀性评价指标部分运用到光学系统的评价之中,得到光学系统在不同关键位置的能量分布曲线以及平顶因子关系图,表明微透镜阵列均束器虽保证了整个光学系统各处光斑的均匀性,但衍射却造成了能量利用率的降低。同时,通过对印制电路板(PCB)和玻璃(ITO)进行曝光和显影实验,表明该双远心共焦投影光学系统,只要控制使均匀输出的能量符合曝光剂量,就能够满足分辨率的要求。     

准分子激光微细加工光路变换研究

准分子激光微细加工技术以其较高的精度,较低成本及较快加工速度在微机械加工领域受到了极大的重视.它利用准分子激光波长短、光子能量高、脉宽窄、脉冲功率密度高的特点,其光子能量甚至高于某些材料的化学键而可以实现冷加工,并且波长短,聚焦光点小,所以加工精度高.但这毕竟不是一种成熟的技术,在很多方面还需要进行进一步的研究. 由于掩模投影成像法的加工为并行加工,加工速度快,加工精度高,可一次成形,为了能够控制加工的精度,必须要求激光光束均匀一致.而由于各种材料都有一定的刻蚀阈值,如果能量利用率过低,就会使准分子激光加工的范围变小.光束辐照强度分布均匀性与光能利用率,这是在光路调整中需要考虑的最为重要的两点. 采用均束器后,准分子激光光束的发散角对均束效果有较大的影响.而真正的光路调整需要综合考虑均束效果、能量利用率.由于光束经过均束器后发散角变大,必须采用场镜压缩发散角.由于准分子激光光束尤其是经过了复眼均束器后的准分子激光束已经远离纯几何光线或高斯光束的传播规律,场镜的尺寸选择不能依据传统的几何光学算法.我们按照发散角原则来对场镜参数进行计算,结合实验测量,最终得到了比较好的结果.(PE7)     

用于平板显示LTPS制备的ELA光束整形系统

介绍了多晶硅薄膜较非晶硅薄膜在平板显示领域的优势以及准分子激光晶化制备多晶硅膜的结晶过程。介绍了透镜阵列实现匀光的原理。阐述了典型的准分子激光退火线型光束整形系统的扩束、匀光、投影等结构。并介绍了连续横向固化技术在准分子激光制备低温多晶硅领域的应用。讨论了准分子激光退火光学系统的发展现状,指出了其在平板显示行业的重要意义。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.