26GHz变容管调谐体效应振荡器

本文给出一种微带波导型变容二极管调谐体效应振荡器设计过程。采用国产器件制作了三只中心频率为25.7GH_z的电调振荡器:在大于500MH_z电调范围内,输出功率均大于120mw 0.5dB,且具有小于0.5dB的功率平坦度、良好的频谱质量及电调线性度。目前已用于26GH_2锁相源系统。实际使用表明:该振荡器结构可靠,性能优良。     

X波段硅微波振荡晶体管

本文报导的X波段硅微波振荡晶体管WZ321型器件,采用了亚微米全干法刻蚀技术、离子注入基区掺杂技术、砷发射区、多层金属化电极、小寄生参量的全密封封装,使器件具有良好的微波性能和可靠性。器件典型的微波参数是在7.5GHz下,振荡输出20mW。     

微波晶体管振荡器的计算机优化设计

本文用负阻概念分析了微波晶体管振荡器的基本工作原理及设计方法，着重讨论了微波振荡器的电路特性，给出了精确可靠的数学模型，并编写出最优化设计程序，从而提高了微波振荡电路的设计效率和精度。     

A Continuously Tuned Varactor Array

A MOS varactor circuit uses an array of softly switched varactors to improve the linearity of the capacitance tuning-control and reduce the dependence on RF-input signal level while increasing the useful capacitance-tuning range. Test circuits have been fabricated in both 90 nm and 0.35 $mu{rm m}$ CMOS processes and are directly compared to a conventional varactor.      

Varactor Controlled Gunn Oscillator at W-Band

This paper describes the experimental circuit and measured performance of varactor tuned Gunn oscillator at W-band. The power output of 12.5 dBm has been achieved when packaged GaAs Gunn diode is used. Linear frequency excursion of 150 MHz with power variation of 1 dB has been observed when varactor was given reverse bias from 0 to 20 volts. GaAs hyperabrupt varactor is used in parallel to gunn diode at a distance of odd multiple of λg/2 in waveguide channel.     

Bipolar Microwave Linear Power Transistor Design

Design considerations for n-p-n bipolar microwave linear power transistors are discussed. Optimization procedures are presented for determining emitter width for a specfic operation frequency, emitter ballasting resistance, and active area geometry based on calculated temperature distributions. A transistor chip designed for 4-GHz operations using these procedures achieved a linear power output of 27.5 dBm at a 1-dB compressed gain of 7 dB with a power added efficiency of 23 percent. Junction temperature rise was limited to 90/spl deg/C.     

3毫米电调振荡器

3毫米电调振荡器是3毫米锁相技术中必不可少的关键部件,采用WT62型体效应二极管作振荡元件,砷化镓突变结变容管作电调元件。业已研制出工作频率在100GHz时,电调带宽1.4GHz,输出功率大于10mW的电调振荡器。     

3mm谐波振荡器的电调谐

本文在分析谐波振荡器的电路特性的基础上,针对谐波振荡器的电调谐问题,提出了“电调基频,提取谐波”的新构想,并以该构想指导振荡器的电路设计。最后,采用国产参放变容管作为电调元件于1988年在国内首次研制成功了3mm电调谐波振荡器。该振荡器最大电调带宽超过4GHz;当电调带宽等于±100MHz时,输出功率大于10mW;当电调带宽等于±500MHz时,输出功率大于5mW。     

低相位噪声微波振荡器设计

针对Ka和Ku波段上、下变频装置对微波振荡器低相位噪声和小型化的要求,该文采用单环锁相式频率合成技术完成了微波振荡器的设计,并对锁相环的相位噪声进行了理论计算。分析了鉴相频率、鉴相器灵敏度和环路带宽对锁相环输出相位噪声的影响,根据分析结果对微波振荡器电路参数合理选择,同时兼顾了低相位噪声与小型化的设计要求。测试结果表明,振荡器的相位噪声指标与理论计算一致,各项指标均达到要求,可满足实际工程应用。     

Matching Network Design Studies for Microwave Transistor Amplifiers

Several techniques for design of microwave amplifiers using lumped-element and distributed matching networks are discussed. An extension to the Remez-algorithm design approaches is proposed, whereby gain and ripple quantities may be adjusted using a numerical optimization procedure in order to achieve complete absorption of device model elements and also impedance transformation.     

微波功率晶体管放大器匹配电路的设计

对微波功率晶体管放大器的阻抗匹配电路提出了一种有效且简便的设计方法.着重分析了多节并联导纳匹配与ADS软件仿真相结合的设计方法的全过程,并对S波段功率晶体管的输出匹配电路进行了分析和计算,取得了较好的效果.根据本文方法,制作了某功率晶体管的放大测试电路并进行测试,其输出功率及效率均优于晶体管手册给出的典型值.     

一款微波双极晶体管的设计和实现

对双极晶体管结构和关键性能参数进行了研究和设计,并进行了流片测试.介绍了器件工艺步骤及其采用的工艺结构.对器件的特征频率、Gummel曲线、发射极电子和空穴浓度、CE击穿特性模拟、β/Ic曲线等关键参数进行了模拟.模拟器件最高特征频率为10 GHz,流片测试最高特征频率为9.5 GHz.     

S波段电调谐TRAPATT振荡器

——本文讨论了TRAPATT振荡器电调谐的条件,提出了微带——波导耦合形式的TRAPATT电路,用插入波导中的变容二极管,使第三次谐波独立调谐以实现TRAPATT振荡器的电调谐.工作于S波段的电调TRAPATT振荡器,电调谐范围大于30MHz,而输出功率变化小于0.2分贝.     

八毫米微波扫频信号源的设计

介绍了八毫米微波扫频信号源的工作原理及关键电路的设计。该信号源功能先进、频带宽，是进行微波器件及微波整机研制的理想设备。     

Microwave Oscillator Analysis

In this paper a generalized oscillation condition for an n-port active device has been presented in terms of its S-parameter matrix and that of the embedding network of the oscillator circuit. The corresponding condition using Z or Y matrices has also been shown. Verification of the proposed theory for a typical two-port and a three-port oscillator network is presented.     

Analysis and Design of a Microwave Transistor Active Filter

In this paper "inverted common collector" transistor resonator filters will be analyzed. Simple formulas will be presented for the input immittance parameters, in terms of the bridged-T equivalent network and in terms of the common-emitter Y parameters. A design procedure is suggested, and a design example given. Stability of the resultant circuitry is discussed.     

Varactor Properties for Wide-Band Linear-Tuning Microwave VCO's

Varactor properties and a particular hyperabrupt doping profile are identified which can provide wide-band tuning linearity for an important class of microwave oscillators. The results are most appropiate for series-tuned oscillators realized with simple configurations of BJT's or FET's in chip, integrated, or monolithic form with low parasitics. The derivation for the doping profile is presented and includes the effects of large signals in modifying the effective varactor capacitance. In addition, breakdown conditions and the level and variation in series resistance are included. When the results are applied to BJT and FET oscillator circuits with measured large-signal properties, the profiles obtained predict excelent linearity for the FET over a 7-12-GHz frecuency range and fair linearity for the BJT circuit from 2 to 4 GHz. The profiles are reasonable and should be realizable with existing varactor fabrication technology.     

Distortion Mechanisms in Varactor Diode-Tuned Microwave Filters

This paper examines the broadband distortion behavior in flexible filters employing varactor-diode tuning elements. Series- and parallel-resonant varactor-loaded transmission-lines, both commonly used in bandpass and bandstop microwave filters, are analyzed. Nonlinear Volterra-series analysis is employed to determine the second- and third-order distortion ratios dependent on the frequencies of the incident signals. It is shown that in a bandpass filter (employing parallel tuned resonators), maximum distortion occurs in the passband, while in a bandstop filter (employing series tuned resonators), minimum distortion occurs at the minimum-loss passband. The analysis is verified by practical measurement of filters employing the two modes of resonators.     

STS-LNP型微波晶体管前置放大器

介绍了ＳＴＳ－ＬＮＰ型微波晶体管前置放大器的电路结构与功能,详细阐述了该放大器在获得低噪声系数、低电压驻波比、平坦的增益特性、较好的工作稳定性等方面所采用的特殊方法。微波器件的选择以及微波电路的组装工艺措施,并对其工作原理和特性进行了说明。