High-temperature crystal chemistry of Na<Subscript>6</Subscript>(UO<Subscript>2</Subscript>)<Subscript>2</Subscript>O(MoO<Subscript>4</Subscript>)<Subscript>4</Subscript>

Thermal deformations of Na₆(UO₂)₂O(MoO₄)₄ were studied by high-temperature powder X-ray diffraction. The compound crystallizes in the triclinic system, space group Р\(\bar 1\), a = 7.636(7), b = 8.163(6), c = 8.746(4) Å, α = 72.32(9)°, β = 79.36(4)°, γ = 65.79(5)°, V = 472.74(4) ų. It is stable in the temperature interval 20–700°С. The thermal expansion coefficients (TECs) are α₁₁ = 25.5 × 10^–6, α₂₂ = 7.8 × 10^–6, and α₃₃ = 1.1 × 10^–6 (°C)^–1. The orientation of the TEC pattern relative to the crystallographic axes is a₃₃^Z = 45°, a₃₃^X = 122°, a₂₂^Z = 59°, and a₂₂^X = 66°. The anisotropy of the thermal expansion is due to specific features of the crystal structure of the compound.     

Effect of sintering temperature on microstructures and microwave dielectric properties of Ba<Subscript>2</Subscript>MgWO<Subscript>6</Subscript> ceramics

The microwave dielectric properties of Ba₂MgWO₆ ceramics were investigated with a view to the use of such ceramics in mobile communication. Ba₂MgWO₆ ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (? _r ) of 16.8–18.2 and unloaded quality factor (Q _u  × f) of 7000–118,200 GHz were obtained at sintering temperatures in the range 1450–1650 °C for 2 h. A maximum apparent density of 6.76 g/cm³ was obtained for Ba₂MgWO₆ ceramic, sintered at 1650 °C for 2 h. A dielectric constant (? _r ) of 18.4, an unloaded quality factor (Q _u  × f) of 118,200 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?34 ppm/°C were obtained when Ba₂MgWO₆ ceramics were sintered at 1650 °C for 2 h.     

Synthesis and crystal structure of [UO<Subscript>2</Subscript>(OH)(CO(NH<Subscript>2</Subscript>)<Subscript>2</Subscript>)<Subscript>3</Subscript>]<Subscript>2</Subscript>(ClO<Subscript>4</Subscript>)<Subscript>2</Subscript>

The complex [UO₂(OH)(CO(NH₂)₂)₃]₂(ClO₄)₂ (I) was synthesized. A single crystal X-ray diffraction study showed that compound I crystallizes in the triclinic system with the unit cell parameters a = 7.1410(2), b = 10.1097(2), c = 11.0240(4) Å, α = 104.648(1)°, β = 103.088(1)°, γ = 108.549(1)°, space group \(P\bar 1\), Z = 1, R = 0.0193. The uranium-containing structural units of the crystals are binuclear groups [UO₂(OH)· (CO(NH₂)₂)₃] ₂ ²⁺ belonging to crystal-chemical group AM²M ₃ ¹ [A = UO ₂ ²⁺ , M² = OH^?, M¹ = CO(NH₂)₂] of uranyl complexes. The crystal-chemical analysis of nonvalent interactions using the method of molecular Voronoi-Dirichlet polyhedra was performed, and the IR spectra of crystals of I were analyzed.     

Effect of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> addition on the microstructure and electrical properties of LaMnO<Subscript>3</Subscript>-based NTC thermistors

A study to develop a new system of negative temperature coefficient thermistors for wide temperature range, A series of Mn-based perovskite-structured ceramics of composition (LaMn_1?x Al _x O₃)_0.9(Al₂O₃)_0.1 has been synthesized by conventional solid state reaction at 1350?°C. The X-ray diffraction patterns showed that for all the samples, the substitution of manganese by aluminum up to x?=?0.1 preserved the rhombohedral perovskite LaMnO₃-like phase. For x?=?0.2, apart from the LaMnO₃-like structure, a second perovskite phase based on the cubic LaAlO₃ structure was formed. For x?=?0.3 and 0.4, the phase present was LaAlO₃ -type structure. The grain sizes of the sintered body detected by scanning electron microscope were decreased with increasing Al₂O₃ content. The resistivity increases with increasing the Al content. The obtained values of ρ _25?°C and B _25/50 and E _a are in the range of 10–13103 Ω cm, 1813–2794 K, 0.156–0.241 eV, respectively. The resistance variation (ΔR/R) was <0.241% and the minimum value (0.0483%) was obtained for aging at 125?°C at 500 h. The aim of this work was explored new composite ceramics materials, which could be used as potential candidates for wide temperature range from ?100 to 500?°C thermistors applications.     

Low temperature sintering and microwave dielectric properties of Zn<Subscript>3</Subscript>Mo<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramic

Crystal structure and dielectric properties of Zn₃Mo₂O₉ ceramics prepared through a conventional solid-state reaction method were characterized. XRD and Raman analysis revealed that the Zn₃Mo₂O₉ crystallized in a monoclinic crystal structure and reminded stable up to1020 °C. Dense ceramics with high relative density (~ 92.3%) were obtained when sintered at 1000 °C and possessed good microwave dielectric properties with a relative permittivity (ε _r ) of 8.7, a quality factor (Q?×?f) of 23,400 GHz, and a negative temperature coefficient of resonance frequency (τ _f ) of around ??79 ppm/°C. With 5 wt% B₂O₃ addition, the sintering temperature of Zn₃Mo₂O₉ ceramic was successfully lowered to 900 °C and microwave dielectric properties with ε _r ?=?11.8, Q?×?f?=?20,000 GHz, and τ _f = ??79.5 ppm/°C were achieved.     

Low temperature sintering and microwave dielectric properties of Li<Subscript>6</Subscript>Mg<Subscript>7</Subscript>Ti<Subscript>3</Subscript>O<Subscript>16</Subscript> ceramics with LiF additive for LTCC applications

Li₆Mg₇Ti₃O₁₆ ceramics were prepared by the conventional solid-state method with 1–5 wt% LiF as the sintering aid. Effects of LiF additions on the phase compositions, sintering characteristics, micro-structures and microwave dielectric properties of Li₆Mg₇Ti₃O₁₆ ceramics were investigated. The LiF addition could effectively lower the sintering temperature of Li₆Mg₇Ti₃O₁₆ ceramics from 1550 to 900 °C. For different LiF-doped compositions, the optimum dielectric permittivity (ε _r ) and quality factor (Q·f) values first increased and then decreased with the increase of LiF contents, whereas the temperature coefficient of resonant frequency (τ _f ) fluctuated between ??14.39 and ??8.21 ppm/°C. Typically, Li₆Mg₇Ti₃O₁₆ ceramics with 4 wt% LiF sintered at 900 °C exhibited excellent microwave dielectric properties of ε _r ?=?16.17, Q·f?=?80,921 GHz and τ _f ?=???8.21 ppm/°C, which are promising materials for the low temperature co-fired ceramics applications.     

Crystal structure,microstructure and microwave dielectric properties of novel MgAl<Subscript>2</Subscript>Ti<Subscript>3</Subscript>O<Subscript>10</Subscript> ceramic

In the present work, a novel MgAl₂Ti₃O₁₀ ceramic was obtained using a traditional solid-state reaction method. X-ray diffraction and energy dispersive spectrometer showed that the main MgAl₂Ti₃O₁₀ phase was formed after sintered at 1300–1450 °C. With rising the sintering temperature from 1300 to 1450 °C, the bulk density (ρ), relative permittivity (ε _r ) and Q?×?f value firstly increased, reached the maximum values (3.61 g/cm³, 14.9, and 26,450 GHz) and then decreased. The temperature coefficient of resonator frequency (τ _f ) showed a slight change at a negative range of ??94.6 to ??83.7 ppm/°C. When the sintering temperature was 1400 °C, MgAl₂Ti₃O₁₀ ceramics exhibited the best microwave dielectric properties with Q?×?f?=?26,450 GHz, ε _r ?=?14.9 and τ _f ?=???83.7 ppm/°C.     

Very high thermal stability with excellent dielectric,and non-ohmics properties of Mg-doped CaCu<Subscript>3</Subscript>Ti<Subscript>4.2</Subscript>O<Subscript>12</Subscript> ceramics

In this work, the nominal CaCu_3?xMg_xTi_4.2O₁₂ (0.00, 0.05 and 0.10) ceramics were prepared by sintering pellets of their precursor powders obtained by a polymer pyrolysis solution method at 1100 °C for different sintering time of 8 and 12 h. Very low loss tangent (tanδ)?<?0.009–0.014 and giant dielectric constant (ε′) ～?1.1?×?10⁴–1.8?×?10⁴ with excellent temperature coefficient (Δε′) less than ±?15% in a temperature range of ??60 to 210 °C were achieved. These excellent performances suggested a potent application of the ceramics for high temperature X8R and X9R capacitors. It was found that tanδ values decreased with increasing Mg²⁺ dopants due to the increase of grain boundary resistance (R_gb) caused by the very high density of grain, resulting from the substitution of small ionic radius Mg²⁺ dopants in the structure. In addition, CaCu_3?xMg_xTi_4.2O₁₂ ceramics displayed non-linear characteristics with the significant enhancements of a non-linear coefficient (α) and a breakdown field (E_b) due to Mg²⁺doping. The high values of ε′ (14012), α (13.64) and E_b (5977.02 V/cm) with very low tanδ value (0.009) were obtained in a CaCu_2.90Mg_0.10Ti_4.2O₁₂ ceramic sintered at 1100 °C for 8 h.     

Growth and magnetic properties of spin coated Co<Subscript>0.6</Subscript>Zn<Subscript>0.4</Subscript>Mn<Subscript>0.3</Subscript>Fe<Subscript>1.7</Subscript>O<Subscript>4</Subscript> ultrathin films on silicon (100), (110) and (111) substrates

This paper reports growth of Co_0.6Zn_0.4Mn_0.3Fe_1.7O₄ (CZFMO) ultrathin films (thickness: 23–30 nm) by spin coating technique on silicon (100), (110) and (111) substrates. The deposited films were annealed at 700 °C for 1 h in the oxygen environment. All the films were found to be polycrystalline in nature. The CZFMO films were found to have minimal residual stress (13–50 MPa), which could be an encouraging feature for novel microwave miniaturized device applications. Room temperature magnetic measurements demonstrated completely saturated hysteresis loop with the highest squareness ratio (M _R /M _S )?~?60% for the film grown on Si (110) substrate. On the other hand CZFMO films on Si (100) and Si (111) substrates showed unsaturated hysteresis loops with M _R /M _S ~ 10 and 5%, respectively. The reason for the better magnetic properties of the ultrathin CZFMO film on Si (110) substrate seems to be its better crystalline quality and larger grain size compared to those of other films.     

Phase relations in the Ag<Subscript>8</Subscript>SnS<Subscript>6</Subscript>-Ag<Subscript>2</Subscript>SnS<Subscript>3</Subscript>-AgBr system and crystal structure of Ag<Subscript>6</Subscript>SnS<Subscript>4</Subscript>Br<Subscript>2</Subscript>

The T-x phase diagram of the Ag-Sn-S-Br system has been studied in the composition region Ag₈SnS₆-Ag₂SnS₃-AgBr, and a compound of composition Ag₆SnS₄Br₂ has been identified. Ag₆SnS₄Br₂ has a new structure, closely related to that of Ag₆GeS₄Br₂: sp. gr. Pnma, a = 6.67050(10), b = 7.82095(9), c = 23.1404(3) Å, Z = 4, R _B = 0.0519, R _wp = 0.0782, χ² = 1.36.     

V<Subscript>3.047</Subscript>O<Subscript>7</Subscript>, a new high-pressure oxide with the simpsonite structure

Reaction between α-V₂O₅ and NaN₃ has been studied at pressures from 5.0 to 6.0 GPa and temperatures from 600 to 800°C using Toroid high-pressure chambers. A new oxide, V_3.047O₇ (VO_2.297), isostructural with simpsonite, Al₄Ta₃O₁₃(OH), has been detected in samples with the initial composition 0.2NaN₃ · V₂O₅ after high-temperature, high-pressure processing at p = 5.0 GPa and t = 800°C for 2 min. The crystal structure of the oxide has been refined by the Rietveld method using X-ray powder diffraction data: a = 7.35136(2) Å, c = 4.51462(2) Å, V = 211.294(1) ų, Z = 2, sp. gr. P3. Each vanadium atom in this structure is coordinated by six oxygens in the form of a [VO₆] octahedron. The synthesized oxide is a second compound with the simpsonite structure. We have measured the infrared transmission and Raman spectra of V_3.047O₇. Electrical measurements have demonstrated that the material is a semiconductor.     

Synthesis and high-temperature heat capacity of Gd<Subscript>2</Subscript>Sn<Subscript>2</Subscript>O<Subscript>7</Subscript>

Gd₂Sn₂O₇ gadolinium stannate with the pyrochlore structure has been prepared by solid-state reaction and its high-temperature heat capacity has been determined by differential scanning calorimetry in the temperature range 350–1020 K. The C_p(T) data are shown to be well represented by the classic Maier–Kelley equation. The experimental C_p(T) data have been used to evaluate the thermodynamic functions of gadolinium stannate: enthalpy increment H°(T)–H°(339 K), entropy change S°(T)–S°(339 K), and reduced Gibbs energy Ф°(Т).     

High-temperature heat capacity and thermodynamic properties of Tb<Subscript>2</Subscript>Sn<Subscript>2</Subscript>O<Subscript>7</Subscript>

Tb₂Sn₂O₇ has been prepared by solid-state reaction in air at 1473 K over a period of 200 h and its isobaric heat capacity has been studied experimentally in the range 350–1073 K. The C _p(T) data for this compound have no extrema and are well represented by the classic Maier–Kelley equation. The experimental C _p(T) data have been used to evaluate the thermodynamic properties of terbium stannate (pyrochlore structure): enthalpy increment H°(T)–H°(350 K), entropy change S°(T)–S°(350 K), and reduced Gibbs energy Ф°(Т).     

Synthesis and characterization of ternary compound,Mn<Subscript>2</Subscript>SnTe<Subscript>4</Subscript>

Mn₂SnTe₄ was synthesized by direct fusion using the anneal method. X-ray powder diffraction analysis indicated that this material crystallizes in the olivine-type structure, space group Pnma, Z = 4, with unit cell parameters: a = 14.020(2) Å, b = 8.147(1) Å, c = 6.607(1) Å, V = 754.7(2) ų. The Rietveld refinement converged to the figures of merit, R _p = 6.9%, R _wp = 8.5%, R _exp = 6.0%, χ² = 2.0 and S = 1.4.     

High-temperature ordering-phase separation transition in the Fe<Subscript>50</Subscript>Co<Subscript>50</Subscript> alloy

High-temperature (above 1200°C) B2 ordering has been detected in the Fe₅₀Co₅₀ alloy by selected area electron diffraction. X-ray photoelectron spectroscopy data indicate that the transition from phase separation to ordering is accompanied by changes in both the d-electron valence band spectrum (ordering increases 3d-electron localization at the Fe atoms) and the 3s core level spectrum (phase separation increases the exchange interaction between the electron spins of the partially filled 3d shell and ionized 3s shell of the Fe and Co atoms). We conclude that an ordering-phase separation transition occurs not only at 730°C but also at a temperature slightly above 1200°C.     

Synthesis and High-Temperature Heat Capacity of Dy<Subscript>2</Subscript>Ge<Subscript>2</Subscript>O<Subscript>7</Subscript> and Ho<Subscript>2</Subscript>Ge<Subscript>2</Subscript>O<Subscript>7</Subscript>

The Dy₂Ge₂O₇ and Ho₂Ge₂O₇ pyrogermanates have been prepared by solid-state reactions in several sequential firing steps in the temperature range 1237–1473 K using stoichiometric mixtures of Dy₂O₃ (or Ho₂O₃) and GeO₂. The heat capacity of the synthesized germanates has been determined as a function of temperature by differential scanning calorimetry in the range 350–1000 K. The experimentally determined C _p (T) curves of the dysprosium and holmium germanates have no anomalies and are well represented by the Maier–Kelley equation. The experimental C _p (T) data have been used to evaluate the thermodynamic functions of the Dy₂Ge₂O₇ and Ho₂Ge₂O₇ pyrogermanates: enthalpy increment H°(T)–H°(350 K), entropy change S°(T)–S°(350 K), and reduced Gibbs energy Ф°(T).     

Synthesis and Crystal Structures of New Layered Uranyl Compounds Containing Dimers [(UO<Subscript>2</Subscript>)<Subscript>2</Subscript>O<Subscript>8</Subscript>] of Edge-Linked Pentagonal Bipyramids

Two new U(VI) compounds, [((CH₃)₂CHNH₃)(CH₃NH₃)][(UO₂)₂(CrO₄)₃] (1) and [CH₃NH₃][(UO₂)· (SO₄)(OH)] (2), were prepared by combining hydrothermal synthesis with isothermal evaporation. Compound 1 crystallizes in the monoclinic system, space group Р2₁, a = 9.3335(19), b = 10.641(2), c = 9.436(2) Å, β = 94.040(4)°. Compound 2 crystallizes in the rhombic system, space group Рbca, a = 11.5951(8), b = 9.2848(6), c = 14.5565(9) Å. The structures of the compounds were solved by the direct methods and refined to R₁ = 0.041 [for 5565 reflections with Fo > 4σ(Fo)] and 0.033 [for 1792 reflections with Fo > 4σ(Fo)] for 1 and 2, respectively. Single crystal measurements were performed at 296 and 100 K for 1 and 2, respectively. The crystal structure of 1 is based on [(UO₂)₂(CrO₄)₃]^2– layers, and that of 2, on [(UO₂)(SO₄)(OH)]^– layers. Both kinds of layers are constructed in accordance with a common principle and are topologically similar. Protonated isopropylamine and methylamine molecules are arranged between the layers in 1, and protonated methylamine molecules, in 2. Compound 1 is the second known example of a U(VI) compound templated with two different organic molecules simultaneously.     

Compounds WAl<Subscript>4</Subscript>, WAl<Subscript>3</Subscript>, W<Subscript>3</Subscript>Al<Subscript>7</Subscript>, and WAl<Subscript>2</Subscript> and Al-W-N combustion products

X-ray diffraction data are presented for combustion products in the Al-W-N system. New, nonequilibrium intermetallic compounds have been identified, their diffraction patterns have been indexed, and their unit-cell parameters have been determined. The phases α-and β-WAl₄ are shown to exist in three isomorphous forms, differing in unit-cell centering. The phases α′-, α″-, and α?-WAl₄ are monoclinic, with a ₀ = 5.272 Å, b ₀ = 17.770 Å, c ₀ = 5.218 Å, β = 100.10°; point groups C12/c1, A12/n1, I12/a1, respectively. The phases β′-, β″-, and β?-WAl₄ are monoclinic, with a ₀ = 5.465 Å, b ₀ = 12.814 Å, c ₀ = 5.428 Å, β = 105.92°; point groups A112/m, B112/m, I112/m, respectively. The compounds WAl₂ and W₃Al₇, identified each in two isomorphous forms, differ in cell metrics (doubling) but possess the same point group: P222. WAl ₂ ^′ : orthorhombic, a ₀ = 5.793 Å, b ₀ = 3.740 Å, c ₀ = 6.852 Å. WAl ₂ ^″ : orthorhombic, a ₀ = 11.586 Å, b ₀ = 3.740 Å, c ₀ = 6.852 Å. W₃Al ₇ ^′ : orthorhombic, Pmm2, a ₀ = 6.225 Å, b ₀ = 4.806 Å, c ₀ = 4.437 Å. W₃Al ₇ ^″ : orthorhombic, Pmm2, a ₀ = 12.500 Å, b ₀ = 4.806 Å, c ₀ = 8.874 Å. The new phase WAl₃: triclinic, P1, a ₀ = 8.642 Å, b ₀ = 10.872 Å, c ₀ = 5.478 Å, α = 104.02°, β = 64.90°, γ = 107.15°.     

Thermodynamic Properties of FeNb<Subscript>2</Subscript>O<Subscript>6</Subscript> and FeTa<Subscript>2</Subscript>O<Subscript>6</Subscript>

Empirical calculational approaches have been used to evaluate the enthalpy, entropy, heat capacity, and melting point of iron(II) niobate and iron(II) tantalate and the coefficients A, B, and C in an equation for the temperature dependence of their heat capacity. The melting point of FeTa₂O₆ has been experimentally determined to be 1891 ± 5 K. The calculated heat capacity (C°_p (298.15 K)) of iron tantalate and the Gibbs energies of formation of FeN₂O₆ and FeTa₂O₆ have been compared to previously reported data.     

Crystal structure of [CH<Subscript>3</Subscript>NH<Subscript>3</Subscript>][(UO<Subscript>2</Subscript>)(H<Subscript>2</Subscript>AsO<Subscript>4</Subscript>)<Subscript>3</Subscript>]

The crystal structure of a previously unknown compound [CH₃NH₃][(UO₂)(H₂AsO₄)₃] was solved by direct methods and refined to R ₁ = 0.038 for 3041 reflections with |F _hkl | >-4σ |F _hkl |. The compound crystallizes in the monoclinic system, space group P2₁/c, a = 8.980(1), b = 21.767(2), c = 7.867(1) Å, β = 115.919(5)°, V = 1383.1(3) ų, Z = 4. In the structure of the compound, pentagonal bipyramids of uranyl ions, sharing bridging atoms with tetrahedral [H₂AsO₄]^? anions, form strongly corrugated layered complexes [(UO₂)(H₂AsO₄)₃]^? arranged parallel to the (100) plane. The protonated methylamine molecules [CH₃NH₃]⁺ form unidimensional tapelike packings parallel to the c axis and linked by hydrophilic-hydro-phobic interactions. The topology of the layered uranyl arsenate complex [(UO₂)(H₂AsO₄)₃]^? is unusual for uranyl compounds and was not observed previously. A specific feature of this topology is the presence of monodentate arsenate “branches” arranged within the layer.