High-mobility CMOS transistors fabricated on very thin SOS films

It is reported that the mobility of CMOS transistors fabricated on very thin silicon-on-sapphire (SOS) films is a function of the film growth rate. Transistors with mobilities nearly as high as those obtained on 1.0-μm-thick films have been fabricated on SOS films 0.2 μm thick that have been grown at growth rates above 4 μm/min     

ZAO膜磁控溅射变参数制备技术

采用射频磁控溅射技术生长ZnO:Al(ZAO)薄膜,用X射线衍射仪检测薄膜的结晶质量。为了提高薄膜的生长效率,进行了在生长过程中调整生长参数的试验。结果发现,生长过程中适当地改变参数,不仅可以提高薄膜的生长效率,还可以获得结晶质量更好的薄膜。在工作压强0.35Pa、溅射功率120W条件下粗生长后,改变工作压强为0.2Pa、溅射功率80W进行细生长,制得的薄膜平均可见光透射率为88%,电阻率为7.8×10–4Ω·cm。     

Atmospheric pressure chemical vapor deposition of blanket tungsten films on silicon substrates for integrated circuit applications

Atmospheric pressure chemical vapor deposition (APCVD) of tungsten films using WF₆/H₂ chemistry has been studied. A statistical design of experiments approach and a surface response methodology were used to determine the most important process parameters and to obtain the best quality film possible in the parameter range studied. It was found that the deposition rate depends strongly on WF₆ flow rate, temperature, and the interaction between hydrogen flow rate and temperature. The resistivity was found to have a strong dependence on WF₆ and H₂ flow rates and temperature. An activation energy of 0.4 eV was calculated for the reaction rate limited growth regime. Empirical equations for predicting the deposition rate and resistivity were obtained. The resistivity decreases with both increasing film thickness and grain size. The films grown in the studied process parameter range indicate that (110) is the preferred orientation for films deposited with low WF₆/H₂ flow rate ratios at all deposition temperatures (350–450°C), whereas, the (222) orientation dominates at high WF₆/H₂ flow ratios and high deposition temperatures. Also, the grain size is larger for (222) oriented films than for (110) oriented films. The results of this study suggest that high-quality, thin film tungsten can be deposited using APCVD.     

WZO薄膜生长及氧流量对其特性的影响

采用直流脉冲反应磁控溅射方法生长W掺杂ZnO(ZnO:W,即WZO)透明导电氧化物(TCO)薄膜并研究了氧气流量对薄膜微观结构、组分、表面形貌以及光电性能的影响。实验结果表明,WZO薄膜具有良好的(002)晶面择优取向生长,且适当的氧气流量是制备优质WZO薄膜的关键因素。WZO薄膜表面形貌受薄膜结晶质量的影响。当氧气流量为2.08×10-7 m3/s时,WZO薄膜在400～1 500nm透过率达到84.5%,电阻率为4.61×10-3Ω.cm,迁移率为20.5cm2v-1s-1。XPS测试表明WZO薄膜中Zn和W均处于氧化态,其中W元素呈现W6+价态。     

Sol-gel processed silica/titania/ÿ-Glycidoxypropyltrimethoxysilane composite materials for photonic applications

Silica/titania/?-Glycidoxypropyltrimethoxysilane composite materials processed by the sol-gel technique were studied for photonic applications. Waveguide thin films with thickness more than 1.7 μm were prepared by the sol-gel spin coating technique and low temperature heat treatment from this high titanium content composite materials. The films were analyzed by atomic force microscopy (AFM), ellipsometry, differential thermal analysis (DTA), thermal gravimetric analysis (TGA), UV-visible spectroscopy (UV-VIS), and Fourier transform infrared (FT-IR) spectroscopy. It was observed that the film becomes thinner as the titanium contents increase. A change of the refractive index through the range 1.52–1.61 at the optical wavelength of 633 nm was achieved by varying the molar ratio between silica and titanium. A dense, low absorption, and high transparency in the visible range waveguide films could be obtained at a low temperature. It was also noted that organic compounds in the film would decompose in the temperature range from 200°C to 480°C. Accordingly, purely inorganic silica-titania films with a thickness of about 0.7 μm could also be obtained by a single-coating process, when the film was baked at a temperature of 500°C or higher. The waveguides properties and photonic applications of the composite material solgel films were also investigated.     

Thin Film Condensation on Nanostructured Surfaces

Water vapor condensation is a ubiquitous process in nature and industry. Over the past century, methods achieving dropwise condensation using a thin (<1 µm) hydrophobic “promoter” layer have been developed, which increases the condensation heat transfer by ten times compared to filmwise condensation. Unfortunately, implementations of dropwise condensation have been limited due to poor durability of the promoter coatings. Here, thin‐film condensation which utilizes a promoter layer not as a condensation surface, but rather to confine the condensate within a porous biphilic nanostructure, nickel inverse opals (NIO) with a thin (<20 nm) hydrophobic top layer of decomposed polyimide is developed. Filmwise condensation confined to thicknesses <10 µm is demonstrated. To test the stability of thin‐film condensation, condensation experiments are performed to show that at higher supersaturations droplets coalescing on top of the hydrophobic layer are absorbed into the superhydrophilic layer through coalescence‐induced transitions. Through detailed thermal‐hydrodynamic modeling, it is shown that thin‐film condensation has the potential to achieve heat transfer coefficients approaching ≈100 kW m^?2 while avoiding durability issues by significantly reducing nucleation on the hydrophobic surface. The work presented here develops an approach to potentially ensure durable and high‐performance condensation comparable to dropwise condensation.     

Helium permeation as a fast quality indicator for barrier properties of solar cell encapsulates

The advent of flexible electronic devices and flexible thin‐film photovoltaic modules increases the need for transparent and flexible high‐barrier films. Conventional methods for measuring the barrier properties of such films are costly and time consuming. In our work, we present a method where we correlate water vapor and helium transmission rate measurements on strained barrier films with thin‐film solar module performance. We show that the detected properties correlate well with the performance of a CIGS mini module exposed to damp‐heat environment. The critical strain limit for a substantial decrease in barrier properties was identified for an ETFE‐based barrier film incorporating an inorganic barrier layer. It was found that the detection of the helium transmission rate provides a fast and reliable way to identify damage to barrier films and is therefore suitable as means for quality control or incoming goods inspection.     

Scalable,Versatile Synthesis of Ultrathin Polyetherimide Films and Coatings via Interfacial Polymerization

Polyetherimides (PEI) are high-performance thermoplastic polymers featuring a high dielectric constant and excellent thermal stability. In particular, PEI thin films are of increasing interest for use in solid-state capacitors and membranes, yet the cost and thickness are limited by conventional synthesis and thermal drawing techniques. Here, a method of synthesizing ultrathin PEI films and coatings is introduced based on interfacial polymerization (IP) of poly(amic acid), followed by thermal imidization. Control of transport, reaction, and precipitation kinetics enables tailoring of PEI film morphology from a nanometer-scale smooth film to a porous micrometer-scale layer of polymer microparticles. At short reaction times (≈1 min) freestanding films are formed with ≈1 µm thickness, which to our knowledge surpass commercial state-of-the-art films (3–5 µm minimum thickness) made by thermal drawing. PEI films synthesized via the IP route have thermal and optical properties on par with conventional PEI. The use of the final PEI is demonstrated in structurally colored films, dielectric layers in capacitors, and show that the IP route can form nanometer-scale coatings on carbon nanotubes. The rapid film formation rate and fine property control are attractive for scale-up, and established methods for roll-to-roll processing can be applied in future work.     

Autodiffusion: a novel method for emitter formation in crystalline silicon thin‐film solar cells

The in situ formation of an emitter in monocrystalline silicon thin‐film solar cells by solid‐state diffusion of dopants from the growth substrate during epitaxy is demonstrated. This approach, that we denote autodiffusion, combines the epitaxy and the diffusion into one single process. Layer‐transfer with porous silicon (PSI process) is used to fabricate n‐type silicon thin‐film solar cells. The cells feature a boron emitter on the cell rear side that is formed by autodiffusion. The sheet resistance of this autodiffused emitter is 330 Ω/□. An independently confirmed conversion efficiency of (14·5 ± 0·4)% with a high short circuit current density of (33·3 ± 0·8) mA/cm² is achieved for a 2 × 2 cm² large cell with a thickness of (24 ± 1) µm. Transferred n‐type silicon thin films made from the same run as the cells show effective carrier lifetimes exceeding 13 µs. From these samples a bulk diffusion length L > 111 µm is deduced. Amorphous silicon is used to passivate the rear surface of these samples after the layer‐transfer resulting in a surface recombination velocity lower than 38 cm/s. Copyright © 2006 John Wiley & Sons, Ltd.     

High potential of thin (<1 µm) a‐Si: H/µc‐Si:H tandem solar cells

Silicon based thin tandem solar cells were fabricated by plasma enhanced chemical vapor deposition (PECVD) in a 30 × 30 cm² reactor. The layer thicknesses of the amorphous top cells and the microcrystalline bottom cells were significantly reduced compared to standard tandem cells that are optimized for high efficiency (typically with a total absorber layer thickness from 1.5 to 3 µm). The individual absorber layer thicknesses of the top and bottom cells were chosen so that the generated current densities are similar to each other. With such thin cells, having a total absorber layer thickness varying from 0.5 to 1.5 µm, initial efficiencies of 8.6–10.7% were achieved. The effects of thickness variations of both absorber layers on the device properties have been separately investigated. With the help of quantum efficiency (QE) measurements, we could demonstrate that by reducing the bottom cell thickness the top cell current density increased which is addressed to back‐reflected light. Due to a very thin a‐Si:H top cell, the thin tandem cells show a much lower degradation rate under continuous illumination at open circuit conditions compared to standard tandem and a‐Si:H single junction cells. We demonstrate that thin tandem cells of around 550 nm show better stabilized efficiencies than a‐Si:H and µc‐Si:H single junction cells of comparable thickness. The results show the high potential of thin a‐Si/µc‐Si tandem cells for cost‐effective photovoltaics. Copyright © 2010 John Wiley & Sons, Ltd.     

Layer‐by‐Layer Synthesis of Thick Mesoporous TiO2 Films with Vertically Oriented Accessible Nanopores and Their Application for Lithium‐Ion Battery Negative Electrodes

TiO₂ films of varying thicknesses (up to ≈1.0 µm) with vertically oriented, accessible 7–9 nm nanopores are synthesized using an evaporation‐induced self‐assembly layer‐by‐layer technique. The hypothesis behind the approach is that epitaxial alignment of hydrophobic blocks of surfactant templates induces a consistent, accessible mesophase orientation across a multilayer film, ultimately leading to continuous, vertically aligned pore channels. Characterization using grazing incidence X‐ray scattering, scanning electron microscopy, and impedance spectroscopy indicates that the pores are oriented vertically even in relatively thick films (up to 1 µm). These films contain a combination of amorphous and nanocrystalline anatase titania of value for electrochemical energy storage. When applied as negative electrodes in lithium‐ion batteries, a capacity of 254 mAh g^?1 is obtained after 200 cycles for a single‐layer TiO₂ film prepared on modified substrate, higher than on unmodified substrate or nonporous TiO₂ film, due to the high accessibility of the vertically oriented channels in the films. Thicker films on modified substrate have increased absolute capacity because of higher mass loading but a reduced specific capacity because of transport limitations. These results suggest that the multilayer epitaxial approach is a viable way to prepare high capacity TiO₂ films with vertically oriented continuous nanopores.     

Enhanced infrared transmission of GZO film by rapid thermal annealing for Si thin film solar cells

Ga doped ZnO (GZO) films prepared by sputtering at room temperature were rapid thermal annealed (RTA) at elevated temperatures. With increasing annealing temperature up to 570°C, film transmission enhanced significantly over wide spectral range especially in infrared region. Hall effect measurements revealed that carrier density decreased from ∼8 × 10²⁰ to ∼ 3 × 10²⁰ cm⁻³ while carrier mobility increased from ∼15 to ∼28 cm²/Vs after the annealing, and consequently low film resistivity was preserved. Hydrogenated microcrystalline Si (µc‐Si:H) and microcrystalline Si_1‐xGe_x (µc‐Si_1‐xGe_x:H, x = 0.1) thin film solar cells fabricated on textured RTA‐treated GZO substrates demonstrated strong enhancement in short‐circuit current density due to improved spectral response, exhibiting quite high conversion efficiencies of 9.5% and 8.2% for µc‐Si:H and µc‐Si_0.9Ge_0.1:H solar cells, respectively. Copyright © 2011 John Wiley & Sons, Ltd.     

MgO缓冲层对Si衬底上制备Fe3Si薄膜性能的影响

采用磁控溅射方法和热加工工艺在n型Si衬底上溅射不同厚度的MgO层并制备Fe-Si薄膜层,退火后形成Fe3Si/MgO/Si多层膜结构.利用MgO缓冲层对退火时Si衬底扩散原子进行屏蔽,并分析MgO层对Fe3Si薄膜结构和电学性质的影响.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和四探针测试仪对Fe3Si薄膜的晶体结构、表面形貌、断面形貌和电阻率进行表征与分析.研究结果表明:当MgO层厚度为20 nm时生成Fe0.9Si0.1薄膜,当厚度为50,100,150和200 nm时都生成了Fe3Si薄膜,生成的Fe3Si和Fe0.9Si0.1薄膜以(110)和(211)取向为主.随MgO缓冲层厚度增加,Si衬底扩散原子对Fe3Si薄膜的影响减小,Fe3 Si薄膜的晶格常数逐渐减小,晶粒大小趋向均匀,平均电阻率呈现先增大后减小趋势.研究结果为后续基于Fe3 Si薄膜的器件设计与制备提供了参考.     

BST薄膜的膜厚与铁电性能关系研究

采用射频磁控溅射法制备了Ba.6Sr0.4TiO3(BST)薄膜,研究了不同膜厚的BST薄膜的介电偏压特性曲线和电滞回线。结果表明,当膜厚从250nm增加到650nm时,BST薄膜的εr、εr的电压变化率和最大极化强度分别从195,9%,4.7×10–6C/cm2逐渐增加到1543,19%,30×10–6C/cm2,而矫顽场强随膜厚的变化较复杂。进一步分析发现,膜厚通过影响矫顽场强和最大极化强度进而影响铁电薄膜的电压非线性。     

Optimization of SnS active layer thickness for solar cell application

This work presents a comparative study of n-SnS and p-SnS active layers for increased solar cell efficiency. Tin sulphide thin films of various thicknesses having p-type and n-type conductivity were fabricated by thermal evaporation. Both type of films had the same (113) orientation of the crystal planes with a constant tensile strain of ~0.003 and ~0.011, respectively. The persistent photocurrent was observed in all n-SnS and p-SnS samples with the current''s time decay constant decreasing with increasing film thickness. Hole mobility of thicker p-SnS films was found to be greater than the electron mobility in n-SnS samples, with mobility (both hole and electron) showing an increasing trend with film thickness. The optimum absorber layer thickness for both p-and n-SnS layers should have a high value of diffusion length for a given absorption coefficient and band-gap.     

The subthreshold behavior of SOS MOST's

MOST subthreshold behavior is of importance in many modern dynamic and very-low-power circuits. SOS MOST's exhibit quite generally a lower transconductance than bulk Si MOST's. Comparison between SOS and bulk Si MOST's is made on the basis of a simple model in the weak inversion region. Experiments with n-and p-channel SOS MOST's fabricated with epi Si layer thicknesses ranging from 0.1 to 3 µm confirm the predicted decrease of transconductance in weak inversion with decreasing thickness. Quantitative agreement between model and experience is obtained if a ∼350-Å thick nonconductive Si layer near the Si-sapphire interface is assumed. A transconductance jump observed for epi Si thickness equal to the surface maximum depletion width has not yet been explained. Further experiments including fabrication process, back-gate voltage measurements, and device dimensions were performed in order to investigate the low-transconductance origin. It is concluded that the only relevant parameters are the epi Si layer thickness and the high density of fast states at the Si-sapphire interface.     

Zinc-oxide thin-film surface-wave transducers

The piezoelectric film layer transducer represents the most efficient method for generating and detecting surface acoustic waves on nonpiezoelectric substrates. ZnO, which has a strong piezoelectric effect and can readily be sputtered as an oriented crystalline composite on a wide variety of substrates, is a natural choice as the piezoelectric film layer. This paper summarizes a body of knowledge which has been developed on the characteristics of transducer quality ZnO film layers, and focuses attention on those sputtering parameters and microstructural properties which characterize a superior surface-wave transducer film. Requisite sputtering conditions are high substrate temperatures (150-300°C), modest deposition rates (0.5-1.0 µm/h), low background vapor pressures (<5 µm Hg) and an ultraclean vacuum system. Transducer quality surface-wave films are characterized by their optical clarity, high density, smooth surface, small crystallite size, and well-oriented crystallite axes. Such ZnO films will play an important role in future surface acoustic wave device technology.     

碳化硅薄膜及压阻效应研究

研究了SiC薄膜的制备及其压阻特性。利用热丝化学气相沉积(HFCVD)法在硅(111)晶面制备SiC薄膜,对制备的薄膜进行X射线衍射分析和其它测试。结果表明:SiC薄膜晶向取向一致,薄膜生长速率为3 m / h,厚度约为5 m。同时,利用高阻仪研究该薄膜的压阻特性,测得应变量()在(2~6)×104范围内,电阻的相对变化量(ΔR·R1)和压阻灵敏度因子(k)随应变量()的变化曲线。结果表明该薄膜有明显的压阻效应。     

谐振腔衰荡法检测激光高反射薄膜损耗

光学薄膜的损耗类型主要涉及吸收和散射,精确测定其数值是制备具有高品质和灵敏度指标激光薄膜的前提。本文以薄膜光学和激光技术为背景,介绍了谐振腔衰荡检测高反射薄膜的原理、特性以及测试方法。以1064 nm和1311 nm的高反射膜层为例,利用Losspro激光测试装置,对于二氧化锆(ZrO2)、五氧化二钽(Ta2O5)材料获得百万分(ppm)量级精度的损耗数据后,针对不同薄膜材料和工艺方法进行了对比检测,分析认为速率控制和离子束能量对于相同材料的激光高反射薄膜具有明显的影响,进而为薄膜样品的制备奠定了技术基础。     

Detection of X‐Rays by Solution‐Processed Cesium‐Containing Mixed Triple Cation Perovskite Thin Films

Materials and technology development for designing innovative and efficient X‐ray radiation detectors is of utmost importance for a wide range of applications ranging from security to medical imaging. Here, highly sensitive direct X‐ray detectors based on novel cesium (Cs)‐based triple cation mixed halide perovskite thin films are reported. Despite being in a thin film form, the devices exhibit a remarkably high X‐ray sensitivity of (3.7 ± 0.1) µC Gy^?1 cm^?2 under short‐circuit conditions. At a small reverse bias of 0.4 V, the sensitivity further increases by orders of magnitude reaching a record value of (97 ± 1) µC Gy^?1 cm^?2 which surpasses state‐of‐the‐art inorganic large‐area detectors (a‐Se and poly‐CZT). Based on detailed structural, electrical, and spectroscopic investigations, the exceptional sensitivity of the triple cation Cs perovskite is attributed to its high ambipolar mobility‐lifetime product as well as to the formation of a pure stable perovskite phase with a low degree of energetic disorder, due to an efficient solution‐based alloying of individual n‐ and p‐type perovskite semiconductors.