On‐Surface Synthesis of 8‐ and 10‐Armchair Graphene Nanoribbons

Armchair graphene nanoribbons (AGNRs) with 8 and 10 carbon atoms in width (8‐ and 10‐AGNRs) are synthesized on Au (111) surfaces via lateral fusion of nanoribbons that belong to different subfamilies. Poly‐para‐phenylene (3‐AGNR) chains are pre‐synthesized as ladder ribbons on Au (111). Subsequently, synthesized 5‐ and 7‐AGNRs can laterally fuse with 3‐AGNRs upon annealing at higher temperature, producing 8‐ and 10‐AGNRs, respectively. The synthetic process, and their geometric and electronic structures are characterized by scanning tunneling microscopy/spectroscopy (STM/STS). STS investigations reveal the band gap of 10‐AGNR (2.0 ± 0.1 eV) and a large apparent band gap of 8‐AGNRs (2.3 ± 0.1 eV) on Au (111) surface.     

Ultrathin Metal Crystals: Growth on Supported Graphene Surfaces and Applications

Controlled nucleation and growth of metal clusters in metal deposition processes is a long‐standing issue for thin‐film‐based electronic devices. When metal atoms are deposited on solid surfaces, unintended defects sites always lead to a heterogeneous nucleation, resulting in a spatially nonuniform nucleation with irregular growth rates for individual nuclei, resulting in a rough film that requires a thicker film to be deposited to reach the percolation threshold. In the present study, it is shown that substrate‐supported graphene promotes the lateral 2D growth of metal atoms on the graphene. Transmission electron microscopy reveals that 2D metallic single crystals are grown epitaxially on supported graphene surfaces while a pristine graphene layer hardly yields any metal nucleation. A surface energy barrier calculation based on density functional theory predicts a suppression of diffusion of metal atoms on electronically perturbed graphene (supported graphene). 2D single Au crystals grown on supported graphene surfaces exhibit unusual near‐infrared plasmonic resonance, and the unique 2D growth of metal crystals and self‐healing nature of graphene lead to the formation of ultrathin, semitransparent, and biodegradable metallic thin films that could be utilized in various biomedical applications.     

Chiral‐Selective Formation of 1D Polymers Based on Ullmann‐Type Coupling: The Role of the Metallic Substrate

The chiral‐selective formation of 1D polymers from a prochiral molecule, namely, 6,12‐dibromochrysene in dependence of the type of metal surface is demonstrated by a combined scanning tunneling microscopy and density functional theory study. Deposition of the chosen molecule on Au(111) held at room temperature leads to the formation of a 2D porous molecular network. Upon annealing at 200 °C, an achiral covalently linked polymer is formed on Au(111). On the other hand, a chiral Cu‐coordinated polymer is spontaneously formed upon deposition of the molecules on Cu(111) held at room temperature. Importantly, it is found that the chiral‐selectivity determines the possibility of obtaining graphene nanoribbons (GNRs). On Au(111), upon annealing at 350 °C or higher cyclo‐dehydrogenation occurs transforming the achiral polymer into a GNR. In contrast, the chiral coordination polymer on Cu(111) cannot be converted into a GNR.     

Co nanoislands on Au(111) and Cu(111) surfaces studied by scanning tunneling microscopy and spectroscopy

Co nanoislands on the Au(111) and Cu(111) surfaces have been studied by scanning tunneling microscopy and spectroscopy. The experimental results showed that Co nanoislands prefer to aggregate at the step edge and dislocation sites on the reconstructed Au(111) surface and at the step edge on the Cu(111) surface, respectively. In addition, based on dZ/dV-V spectra, in both the Co/Au(111) and the Co/Cu(111) systems, Gundlach oscillation was observed. From the peak shift of dZ/dV-V spectra between Co nanoisland and substrate surface, we can quantitatively obtain that the constant energy separation is -0.13 +/- 0.01 eV for the Co/Au(111) system, and 0.41 +/- 0.02 eV for the Co/Cu(111) system, respectively. These values indicate the work function difference between Co nanoisland and these surfaces.     

Metal-supported high crystalline Bi₂Se₃ quintuple layers

Atomically flat thin films of Bi(2)Se(3) were grown on Au(111) metal substrate using molecular beam epitaxy. Hexagonal atomic structures and quintuple layer steps were observed at the surfaces of grown films using scanning tunneling microscopy. Multiple sharp peaks from (003) family layers were characterized by x-ray diffraction measurements. The atomic stoichiometry of Bi and Se was considered using x-ray photoemission spectroscopy. Moiré patterns were obtained at the surfaces of one quintuple layer films due to lattice mismatch between Bi(2)Se(3) and Au. Our experiments suggest that Au is a reasonable material for electrodes in Bi(2)Se(3) devices.     

Visualizing local doping effects of individual water clusters on gold(111)-supported graphene

The local charge carrier density of graphene can exhibit significant and highly localized variations that arise from the interaction between graphene and the local environment, such as adsorbed water, or a supporting substrate. However, it has been difficult to correlate such spatial variations with individual impurity sites. By trapping (under graphene) nanometer-sized water clusters on the atomically well-defined Au(111) substrate, we utilize scanning tunneling microscopy and spectroscopy to characterize the local doping influence of individual water clusters on graphene. We find that water clusters, predominantly nucleated at the atomic steps of Au(111), induce strong and highly localized electron doping in graphene. A positive correlation is observed between the water cluster size and the local doping level, in support of the recently proposed electrostatic-field-mediated doping mechanism. Our findings quantitatively demonstrate the importance of substrate-adsorbed water on the electronic properties of graphene.     

Physical vapor deposition of metal nanoparticles on chemically modified graphene: observations on metal-graphene interactions

The growth of metallic nanoparticles formed on chemically modified graphene (CMG) by physical vapor deposition is investigated. Fine control over the size (down to ～1.5 nm for Au) and coverage (up to 5 × 10(4) μm(-2) for Au) of nanoparticles can be achieved. Analysis of the particle size distributions gives evidence for Au nanocluster diffusion at room temperature, while particle size statistics differ clearly between metal deposited on single- and multilayer regions. The morphology of the nanoparticles varies markedly for different metals (Ag, Au, Fe, Pd, Pt, Ti), from a uniform thin film for Ti to a droplet-like growth for Ag. A simple model explains these morphologies, based only on consideration of 1) the different energy barriers to surface diffusion of metal adatoms on graphene, and 2) the ratio of the bulk cohesive energy of the metal to the metal-graphene binding energy. Understanding these interactions is important for controlling nanoparticle and thin-film growth on graphene, and for understanding the resultant charge transfer between metal and graphene.     

Altering the ordering and disordering of a triangular nanographene at room temperature

Molecular self-organization has the potential to serve as an efficient and versatile tool for the spontaneous creation of low-dimensional nanostructures on surfaces. We demonstrate how the subtle balance between intermolecular interactions and molecule-surface interactions can be altered by modifying the environment or through manipulation by means of the tip in a scanning tunnelling microscope (STM) at room temperature. We show how this leads to the distinctive ordering and disordering of a triangular nanographene molecule, the trizigzag-hexa-peri-hexabenzocoronenes-phenyl-6 (trizigzagHBC-Ph6), on two different surfaces: graphite and Au(111). The assembly of submonolayer films on graphite reveals a sixfold packing symmetry under UHV conditions, whereas at the graphite-phenyloctane interface, they reorganize into a fourfold packing symmetry, mediated by the solvent molecules. On Au(111) under UHV conditions in the multilayer films we investigated, although disorder prevails with the molecules being randomly distributed, their packing behaviour can be altered by the scanning motion of the tip. The asymmetric diode-like current-voltage characteristics of the molecules are retained when deposited on both substrates. This paper highlights the importance of the surrounding medium and any external stimulus in influencing the molecular organization process, and offers a unique approach for controlling the assembly of molecules at a desired location on a substrate.     

Adsorption of benzene on noble metal surfaces studied by density functional theory with Van der Waals correction

We have studied the atomic geometries and the electronic properties of benzene/metal interfaces by using density functional theoretical (DFT) calculations with van der Waals corrections. Adsorption energies of benzene on Cu(111), Ag(111), and Au(111) surfaces calculated by van der Waals density functional proposed by Dion and co-workers agree reasonably well with experimentally reported values, while those calculated by a semi-empirical van der Waals correction proposed by Grimme are overestimated slightly. The work function change induced by benzene adsorption on the three surfaces are quite well reproduced by the semi-empirical correction, suggesting that weak adsorption geometries can be quite well reproduced by DFT with a semi-empirical dispersion correction scheme.     

Growth Mechanism of Metal Clusters on a Graphene/Ru(0001) Template

Using first‐principles calculations combined with scanning tunneling microscopy experiments, we investigated the adsorption configurations, electronic structures and the corresponding growth mechanism of several transition metal (TM) atoms (Pt, Ru, Ir, Ti, Pd, Au, Ag, and Cu) on a graphene/Ru(0001) moiré template (G/Ru(0001)) at low coverage. We find that Pt, Ru, Ir, and Ti selectively adsorb on the fcc region of G/Ru(0001) and form ordered dispersed metal nanoclusters. This behavior is due to the unoccupied d orbital of the TM atoms and the strong sp³ hybridization of carbon atoms in the fcc region of G/Ru(0001). Pd, Au, Ag, and Cu form nonselective structures because of the fully occupied d orbital. This mechanism can be extended to metals on a graphene/Rh(111) template. By using Pt as an example, we provide a layer by layer growth path for Pt nanoclusters in the fcc region of the G/Ru(0001). The simulations of growth mechanism agree well with the experimental observations. Moreover, they also provide guidance for the selection of suitable metal atoms to form ordered dispersed metal nanoclusters on similar templates.     

Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance

Although the work function of graphene under a given metal electrode is critical information for the realization of high-performance graphene-based electronic devices, relatively little relevant research has been carried out to date. In this work, the work function values of graphene under various metals are accurately measured for the first time through a detailed analysis of the capacitance-voltage (C-V) characteristics of a metal-graphene-oxide-semiconductor (MGOS) capacitor structure. In contrast to the high work function of exposed graphene of 4.89-5.16 eV, the work function of graphene under a metal electrode varies depending on the metal species. With a Cr/Au or Ni contact, the work function of graphene is pinned to that of the contacted metal, whereas with a Pd or Au contact the work function assumes a value of ～4.62 eV regardless of the work function of the contact metal. A study of the gate voltage dependence on the contact resistance shows that the latter case provides lower contact resistance.     

Metal-graphene interaction studied via atomic resolution scanning transmission electron microscopy

Distributions and atomic sites of transition metals and gold on suspended graphene were investigated via high-resolution scanning transmission electron microscopy, especially using atomic resolution high angle dark field imaging. All metals, albeit as singular atoms or atom aggregates, reside in the omni-present hydrocarbon surface contamination; they do not form continuous films, but clusters or nanocrystals. No interaction was found between Au atoms and clean single-layer graphene surfaces, i.e., no Au atoms are retained on such surfaces. Au and also Fe atoms do, however, bond to clean few-layer graphene surfaces, where they assume T and B sites, respectively. Cr atoms were found to interact more strongly with clean monolayer graphene, they are possibly incorporated at graphene lattice imperfections and have been observed to catalyze dissociation of C-C bonds. This behavior might explain the observed high frequency of Cr-cluster nucleation, and the usefulness as wetting layer, for depositing electrical contacts on graphene.     

Tuning the Doping Type and Level of Graphene with Different Gold Configurations

Au nanoparticles and films are deposited onto clean graphene surfaces to study the doping effect of different Au configurations. Micro‐Raman spectra show that both the doping type and level of graphene can be tuned by fine control of the Au deposition. The morphological structures of Au on graphene are imaged by transmission electron microscopy, which indicate a size‐dependent electrical characteristic: isolated Au nanoparticles produce n‐type doping of graphene, while continuous Au films produce p‐type doping. Accordingly, graphene field‐effect transistors are fabricated, with the in situ measurements suggesting the tunable conductivity type and level by contacting with different Au configurations. For interpreting the experimental observations, the first‐principles approach is used to simulate the interaction within graphene–Au systems. The results suggest that, different doping properties of Au–graphene systems are induced by the chemical interactions between graphene and the different Au configurations (isolated nanoparticle and continuous film).     

Epitaxial Growth of 6 in. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition

The future electronic application of graphene highly relies on the production of large‐area high‐quality single‐crystal graphene. However, the growth of single‐crystal graphene on different substrates via either single nucleation or seamless stitching is carried out at a temperature of 1000 °C or higher. The usage of this high temperature generates a variety of problems, including complexity of operation, higher contamination, metal evaporation, and wrinkles owing to the mismatch of thermal expansion coefficients between the substrate and graphene. Here, a new approach for the fabrication of ultraflat single‐crystal graphene using Cu/Ni (111)/sapphire wafers at lower temperature is reported. It is found that the temperature of epitaxial growth of graphene using Cu/Ni (111) can be reduced to 750 °C, much lower than that of earlier reports on catalytic surfaces. Devices made of graphene grown at 750 °C have a carrier mobility up to ≈9700 cm² V^?1 s^?1 at room temperature. This work shines light on a way toward a much lower temperature growth of high‐quality graphene in single crystallinity, which could benefit future electronic applications.     

Spin-orbit coupling induced interference in quantum corrals

Lack of inversion symmetry at a metallic surface can lead to an observable spin-orbit interaction. For certain metal surfaces, such as the Au(111) surface, the experimentally observed spin-orbit coupling results in spin rotation lengths on the order of tens of nanometers, which is the typical length scale associated with quantum corral structures formed on metal surfaces. In this work, multiple scattering theory is used to calculate the local density of states (LDOS) of quantum corral structures composed of nonmagnetic adatoms in the presence of spin-orbit coupling. Contrary to previous theoretical predictions, spin-orbit coupling induced modulations are observed in the theoretical LDOS, which should be observable using scanning tunneling microscopy.     

The interface electronic structure of thiol terminated molecules on cobalt and gold surfaces

The bonding strength and interfacial electronic properties of biphenyldimethyldithiol (HS–CH₂–C₆H₄–C₆H₄–CH₂–SH) adsorbed on Au(111) and polycrystalline cobalt are identified from combined photoemission and inverse photoemission. In order to develop a better understanding of the thiol functional group to metal surface interaction, the stable orientation, bonding site, bonding strength and interfacial electronic properties of methylthiol (S–CH₃) adsorbed on Au(111) and Co(0001) have been determined by ab initio density functional calculations. Both experiment and theory suggest that thiol bonding to cobalt surfaces is stronger compared to gold surfaces. The transfer of charge toward the adsorbed sulfur is greater for the thiols on cobalt than on gold.     

Mn atomic layers under inert covers of graphene and hexagonal boron nitride prepared on Rh(111)

Intercalation of metal atoms into the interface of graphene and its supporting substrate has become an intriguing topic for the sake of weakening the interface coupling and constructing metal atomic layers under inert covers. However, this novel behavior has rarely been reported on the analogous hexagonal boron nitride (h-BN) synthesized on metal substrates. Here, we describe a comparative study of Mn intercalation into the interfaces of graphene/Rh(111) and h-BN/Rh(111), by using atomically-resolved scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. The intercalation was performed by annealing as-deposited Mn clusters, and the starting temperature of Mn intercalation into h-BN/Rh(111) was found to be ～80 °C higher than that for graphene/Rh(111). Moreover, the intercalated islands of h-BN/Mn/Rh(111) usually possess more irregular shapes than those of graphene/Mn/Rh(111), as illustrated by temperature-dependent STM observations. All these experimental facts suggest a stronger interaction of Mn with h-BN/Rh(111) than that with graphene/Rh(111).      

Out‐of‐Plane Strain Induced in a Moiré Superstructure of Monolayer MoS2 and MoSe2 on Au(111)

Making contact of transition metal dichalcogenides (TMDCs) with a metal surface is essential for fabricating and designing electronic devices and catalytic systems. It also generates strain in the TMDCs that plays significant role in both electronic and phonon structures. Therefore, detailed understanding of mechanism of the strain generation is important to fully comprehend the modulation effect for the electronic and phonon properties. Here, MoS₂ and MoSe₂ monolayers are grown on Au surface by chemical vapor deposition and it is demonstrated that the contact with a crystalline Au(111) surface gives rise to only out‐of‐plane strain in both MoS₂ and MoSe₂ layers, whereas no strain generation is observed on polycrystalline Au or SiO₂/Si surfaces. Scanning tunneling microscopy analysis provides information regarding consequent specific adsorption sites between lower S (Se) atoms in the S? Mo? S (Se? Mo? Se) structure and Au atoms via unique moiré superstructure formation for MoS₂ and MoSe₂ layers on Au(111). This observation indicates that the specific adsorption sites give rise to out‐of‐plane strain in the TMDC layers. Furthermore, it also leads to effective modulation of the electronic structure of the MoS₂ or MoSe₂ layer.     

Greatly Enhanced Anticorrosion of Cu by Commensurate Graphene Coating

Metal corrosion is a long‐lasting problem in history and ultrahigh anticorrosion is one ultimate pursuit in the metal‐related industry. Graphene, in principle, can be a revolutionary material for anticorrosion due to its excellent impermeability to any molecule or ion (except for protons). However, in real applications, it is found that the metallic graphene forms an electrochemical circuit with the protected metals to accelerate the corrosion once the corrosive fluids leaks into the interface. Therefore, whether graphene can be used as an excellent anticorrosion material is under intense debate now. Here, graphene‐coated Cu is employed to investigate the facet‐dependent anticorrosion of metals. It is demonstrated that as‐grown graphene can protect Cu(111) surface from oxidation in humid air lasting for more than 2.5 years, in sharp contrast with the accelerated oxidation of graphene‐coated Cu(100) surface. Further atomic‐scale characterization and ab initio calculations reveal that the strong interfacial coupling of the commensurate graphene/Cu(111) prevents H₂O diffusion into the graphene/Cu(111) interface, but the one‐dimensional wrinkles formed in the incommensurate graphene on Cu(100) can facilitate the H₂O diffusion at the interface. This study resolves the contradiction on the anticorrosion capacity of graphene and opens a new opportunity for ultrahigh metal anticorrosion through commensurate graphene coating.     

Effects of polycrystalline cu substrate on graphene growth by chemical vapor deposition

Chemical vapor deposition of graphene on Cu often employs polycrystalline Cu substrates with diverse facets, grain boundaries (GBs), annealing twins, and rough sites. Using scanning electron microscopy (SEM), electron-backscatter diffraction (EBSD), and Raman spectroscopy on graphene and Cu, we find that Cu substrate crystallography affects graphene growth more than facet roughness. We determine that (111) containing facets produce pristine monolayer graphene with higher growth rate than (100) containing facets, especially Cu(100). The number of graphene defects and nucleation sites appears Cu facet invariant at growth temperatures above 900 °C. Engineering Cu to have (111) surfaces will cause monolayer, uniform graphene growth.