用OpenSSL进行TLS/SSL编程

TLS/SSL是一个得到广泛应用的安全通信标准,OpenSSL是TLS/SSL的OpenSource实现。介绍了OpenSSL提供的TLS/SSL编程接口,并给出了WIN32平台上用OpenSSL进行TLS/SSL编程的程序示例。     

一种支持ECC算法的传输层安全协议

首先介绍了RSA算法和ECC算法（Elliptic Curve Cryptography）在国内外的应用情况,接着介绍了RSA算法在传输层安全协议中的应用情况,并以身份认证系统为例,原有身份认证系统采用TLS（Transport Layer Security）协议,通过对协议的修改,完成协议对椭圆曲线的支持,提出了改进的支持ECC算法的传输层安全协议,协议内容参照传输层安全协议（RFC4346TLS1．1）,结合实际应用需求,在TLS1．1的握手协议中增加了ECC的认证模式和密钥交换模式,取消了DH密钥协商方式,修改了密码套件的定义。     

基于OpenSSL的Web安全访问控制设计与实现

随着PKI技术和SSL安全协议的广泛应用,在Web服务中利用SSL协议,提供安全的数据通信是非常重要的。OpenSSL是一个SSL/TLS协议的优秀实现,文章分析了相关技术和协议,利用这款开源软件工具,在通信中建立SSL连接,实现Web访问的安全控制。     

基于SSL加密隧道的VPN的研究与应用

SSL VPN是一种利用SSL/TLS协议进行虚拟隧道加密的新型VPN系统。简单介绍了SSL协议和常见VPN实现技术以及它们的不足之处;并使用开源软件OpenVPN设计了一个安全健壮的VPN系统。经实际使用,取得了良好的效果。     

移动终端的安全解决方案δ-SSL

目前,关于无线通信的安全协议标准有WTLS、SSL、TLS等。本文分析了SSL协议,并提出了其在移动终端上的安全解决方案d-SSL。     

一种安全隧道网关的设计与实现

针对应用层客户/服务器系统安全性欠缺的情况,设计、实现了一套基于SSL/TLS协议的安全隧道网关,以提供无缝的安全集成.客户端隧道网关与服务器端隧道网关之间基于X.509证书进行身份认证,并建立SSL/TLS安全链接转发客户端请求与服务器端响应.隧道网关与客户端、服务器之间采用普通TCP/IP链接进行数据传输.隧道网关使已有客户/服务器系统无需任何修改即可享有机密性、完整性和可认证的数据传输.最后给出了网关测试结果与应用实例.     

新品发布

集成电路支持OC—12的加密芯片 7851协议安全处理器为3DES和LZS压缩分别提供500 Mbps和700Mbps速度的加密。它能以连线速度识别含有IPSec、SSL、TLS、PPP和PPTP协议的信息包。     

基于Internet的嵌入式系统安全策略(下)

SSL和TLS(上文接12A)安全套接层协议(SSL)由Netscape公司开发，最早用于其1995年的Navigator产品。InternetEngineering Task Force(IETF)认可了该协议的地位，后来发布了RFC 2246。尽管作为网络协议SSL和TLS几乎没有差别，不过其中某些加密和MAC算法存在轻微的差异。本文将专注于协议方面的问题，而为了简单起见，将其统称为TLS。TLS 包括了如下功能:· 算法协商；· 加密和解密；·信息发送者身份确认(通过MAC)；· 密钥交换；· 数字签名。正如图5所示的那样，TLS层必须建立在某种可靠的连接协议层之上。在实践中，这…     

IPTV终端网管鉴权系统的设计与实现

根据目前IPTV业务的安全性目标和需求,针对IPTV终端网管系统中未授权用户非法接入和业务权限控制问题,采用HTTP摘要认证机制和SSL/TLS协议结合RSA非对称加密算法,设计并实现了一套终端网管鉴权系统.经过测试分析,鉴权系统满足终端设备身份和业务权限鉴权的需求,提高了系统的安全性.     

新的芯片设计改进了SSL加密技术

网络安全处理器制造商NetOctave（位于北卡州的Morrisville）,提出了一　种新的芯片设计,预期可以提高SSL（secure-sockets-layer）性能;并且可以保持工业界现行的PCI结构不变。这一项技术,被命名为‘加密处理’（CipherSuite Processins）,可以使该公司的NSP2000安全保密处理器,从控制处理器中只用一次总线传输,就可以下载整个SSL协议,这样可以显著地缩短了等待时间和传输时间,并且解放了系统的TCP/IP资源。 SSL协议包括一个握手过程（通常是进行RSA解密功能）,和进行加密/确认功能的过程。加密/确认功能或者使用ARC4/MD5,或者使用3DES/SHA-1     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.