区熔硅单晶掺杂技术概述

区熔硅单晶是制作电力电子器件的主要原材料,高质量的电力电子器件的发展对区熔硅单晶的高完整性、高纯度、高均匀性及大直径化提出了较高的要求.随着电力电子器件快速发展,市场需求急剧增加,为了深入的研究并应用掺杂技术,对几种掺杂工艺进行了分析和探讨.     

电力电子器件及其应用的现状和发展

电力电子技术近年来得到了长足的发展,作为当前重要的高新技术产业是我国进行工业模式转型、国防安全建设的核心技术.发展能够承载大功率电流的核心技术,是电力电子器件当下需要面对的问题.本文通过对电力电子技术的分析,研究主导电力电子器件技术升级的大功率元器件,探讨当下电力电子元件的应用问题,为电力电子器件的发展与进步,提供宝贵的参考意见.     

全控型电力电子器件教学实验平台的开发

针对理论教学过程中学生对电力电子器件特性及驱动控制存在理解抽象的问题,笔者以单片机InfineonXCl64CM为核心设计一种全控型电力电子器件驱动控制教学实验平台。该实验平台配合示波器使用,可进行电力电子器件驱动控制和特性分析的教学与实验。实践证明,全控型电力电子器件实验教学平台具有可操作性强和演示效果明显等特点,能...     

现代电力电子器件的发展与现状

本文简单回顾了电力电子技术及电力电子器件的发展过程,介绍了IGBT、IGCT等主流现代电力电子器件的工作原理、现状和发展动态,最后探讨了现代电力电子器件的发展前景。     

面向开关过程的大功率电力电子器件建模

传统的大功率电力电子装置仿真中,通常将电力电子装置的开关动态过程视为理想过程,不能如实反映工作过程中的电压电流尖峰脉冲对系统的影响,针对该问题文章提出了一种面向开关过程的大功率电力电子器件建模方法,运用插值建模的方法,对大功率电力电子器件进行兼顾全面性和细致性的仿真,正确反映开关动态过程中大功率电力电子器件过程中的电压电流尖峰现象,从而获得较高的仿真精度。     

浅谈现代电力电子器件的发展

本文简单回顾了电力电子技术及电力电子器件的发展过程，介绍了IGBT、IGCT等主流现代电力电子器件的工作原理、现状和发展动态。最后，探讨了现代电力电子器件的发展展望。     

浅谈现代电力电子器件的发展

本文简单回顾了电力电子技术及电力电子器件的发展过程，介绍了IGBT、IGCT等主流现代电力电子器件的工作原理、现状和发展动态。最后，探讨了现代电力电子器件的发展展望。     

电力电子器件产业发展战略研讨会在京成功召开

为进一步加强对电力电子器件产业发展的宏观引导,探讨产业发展大计,做好我国电力电子器件产业发展战略的编制工作,推进产业科学健康快速发展,由工业和信息化部电子信息司组织、北京电力电子学会和中国电器工业协会电力电子分会协办的"电力电子器件产业发展战略研讨会"于12月29日在北京成功召开。由于本次会议十分重要,吸引了国内大多数主流电力电子器件厂商及部分变频器、UPS电源厂商的代表近百人参加。     

关注中国电力电子产业发展

作为变频器的核心器件,电力电子器件的优劣对变频器的档次起着决定性作用。电力电子器件与变频器的发展是一个互为促进的过程,变频器发展促进了电力电子器件的新技术研究,而电力电子器件的发展又反过来促进变频器整体水平的提升。在过去五十年的历史中,中国电力电子的开发研究也算取得了巨大的进步,然而与国际上同领域的技术发展相比,我国的技术还存在很大的差距,而且受到利益驱动的因素,中国电力电子     

国际电子龙讯

与日前国家大张旗鼓推动的半导体行业中集成电路的产业化相比,电力电子器件的研制和生产可算是“默默无闻”了。但世界上有四分之三的电能是通过电力电子器件来转换。无论是工业设备,还是日常生活,都离不开电力电子器件。 20kHz革命,使电力电子器件家族中     

对于L．adapter2中其他ICT设备通用电源适配器空载功耗和纹波电压的测试分析

2012年1月,在都灵召开的ITuSG5021报告人联合会议上,我国提交了关于其他ICT设备通用电源适配器空载功耗和纹波电压的测试分析文稿,该文稿得到了众多代表的肯定。本次,我们又收集大量样品并进行了大量补充试验,形成此文稿。本文建议空载功耗依照能源之星,输出功率在0-49W之间的设备空载功耗不大于0．3W,输出功率在50-250W之间的设备空载功耗不大于0．5W;建议移动电话机电源适配器的纹波电压为80mV以下,其他ICT设备电源适配器的纹波电压为200mV以下。     

Reliability enhancement with the aid of transient infrared thermal analysis of smart Power MOSFETs during short circuit operation

The usage of novel measurement techniques enhances the capabilities of researchers and power device manufacturers to understand and address reliability problems in novel Smart Power Devices. Along this line of argument, this work describes a method to improve the reliability of the smart Power MOSFET devices by design. The design optimization process involves Silicon layout, interconnections, packaging and protection strategy as well. Accurate thermal transient analyses, made possible by the unique features of a custom infrared radiometric microscope experimental setup which allows dynamic temperature detection with a bandwidth of 1 MHz over the chip area, indicated the way to minimize peak temperature and to verify the effect of the optimization.     

“电力电子器件”课件仿真教学实践

本文从实践教学与人才培养的角度出发,借助于计算机虚拟仿真技术探讨了“电力电子器件”课程的教学方法与手段。采用虚拟仿真软件Silvaco,以半控型晶闸管和全控型功率MOSFET为代表,介绍了课堂教学中实时演示电力电子器件工作过程的实例。通过虚拟仿真教学实践,加深了学生对电力电子器件运行机理的理解。     

An Overview of Twenty-Five Years of Electrical and Electronics Engineering in the Proceedings of the IEEE, 1963-1987

The article presents a survey of the history of electrical and electronics engineering as seen in the 136 special issues and special sections of the Proceedings of the IEEE, from 1963 to 1987, in seven areas: Circuits and Devices(microelectronics and lasers and electrooptics); Computers; Communications; Signals, Systems, and Control; Electromagnetics; Energy, Power, and Industry and Engineering and Human Environment. Special attention is paid to the incremental nature of technological change, the relationship between electrophysics and electrotechnology, and the role of government funding in supporting electronics R & D. It is hoped that setting the "snapshots" of the special issues and special sections in an historical framework will assist future researchers seeking to reach a better understanding of the electronics "revolution" of the post-Sputnik period.     

“半导体器件物理”课程教学研究与探索

"半导体器件物理"是微电子学本科的一门重要专业基础课。本文以其与"半导体工艺"、"集成电路CAD"和"集成电路设计"课程的关系为视角,阐述如何讲授好"半导体器件物理"课程,使学生能把多门专业课之间的关系梳理清楚,能更扎实地学习好本课程,提高学习效率。     

Dependence of GaAs power MESFET microwave performance on device and material parameters

The results of recent X-band measurements on GaAs Power FET's are described. These devices are fabricated with a simple planar process and at least 1-W output power at 9 GHz with 4-dB gain has been obtained from more than 25 slices having carrier concentrations in the range 5 to 15 × 10¹⁶cm^-3. The highest output powers observed to date are 1.0 W at 11 GHz and 3.6 W at 8 GHz with 4-dB gain. Devices have had up to 46-percent power-added efficiency at 8 GHz. The fabrication process is briefly described and the factors contributing to the high output powers reported here are discussed. Some of these factors are epitaxial carrier concentration near 8 × 10¹⁶cm^-3, good device heatsinking, and low parasitic resistance. The observed dependence of microwave performance on total gate width, gate length, pinchoff voltage, epitaxial doping level, etc., is described.     

Transparent and quasi-transparent regional solutions tominority-carrier transport in arbitrarily doped semiconductors

The exact analytical regional solution to minority-carrier transport is derived in arbitrarily doped transparent semiconductor regions. By using this solution, new regional quasi-transparent solutions for emitter light-generated current density are derived in both the Cuevas and Balbuena approach (Cuevas and Balbuena, IEEE Trans. Electron Devices, vol. 36, pp. 553-560, 1989) and the Hamel approach (Hamel, IEEE Trans. Electron Devices, vol. 46, pp. 104-109, 1996) . Either of the new third-order quasi-transparent expressions is shown to be more accurate than both the local second-order quasi-transparent expression of Cuevas and Balbuena and the third-order regional expression of Bisschop et al (IEEE Trans. Electron Devices, vol. 37, pp. 358-364, 1990). In particular, while the new expression derived according to Hamel is more accurate at passivated surfaces, the new expression derived according to Cuevas and Balbuena is always more accurate, except for the case of a negligible surface recombination, where it is as accurate as the third-order regional expression of Bisschop et al     

High performance fully selective double recess InAlAs/InGaAs/InPHEMTs

InP HEMTs with a double recess 0.12 μm gate have been developed. The material structure was designed to be fully selective etched at both recess steps for improved uniformity and yield across the whole wafer. Devices demonstrated DC characteristics of extrinsic transconductances of 1000 mS/mm, maximum current density of 800 mA/mm and gate-drain reverse breakdown voltages of -7.8 V. Power measurements were performed at both 20 GHz and 60 GHz. At 20 GHz, the 6×75 μm devices yielded 65% maximum power added efficiency (PAE) with associated gain of 13.5 dB and output power of 185 mW/mm. When tuned for maximum output power it gave an output power density of 670 mW/mm with 15.6 dB gain and 49% PAE. At 60 GHz, maximum PAE of 30% has been measured with associated output power density of 290 mW/mm and gain of 7.4 dB. This represents the best power performance reported for InP-based double recess HEMT's     

Power and battery management ICs for low-cost portable electronics

Handheld devices such as mobile phones have exacting power management. Different elements require special supply voltage and have also different requirement in terms of noise, power supply rejection ratio (psrr) etc. Power managementics consist mainly of voltage and currents regulators. Linear and switched regulators are implemented in every portable Devices, cellular phones, pagers, laptops, etc. to provide good regulated power supplies of each part in a complex circuit. Low quiescent current of high performance linear regulators and high efficiency of pulse-width-modulationdcdc converters are the most important parameters for the battery autonomy. Battery chargers interface is very important function in the battery management integrated circuit, which allows the control of the charge of the battery with the maximum battery autonomy without reducing its life. This paper discuses and presents some techniques and new architectures that enable the practical realizations of full chip combining the power and the battery management with high performance. These high performance full chips are achieved using a classicalcmos technology.     

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

A self-aligned “slant-field-plate” technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs. Devices were tested in Fluorinert to eliminate the breakdown of air, which was identified to limit the breakdown voltage in AlGaN/GaN HEMTs. A single integrated field plate, which is self-aligned with the gate, is shown to support more than a kilovolt breakdown voltage ($V_ br$up to 1900 V was measured with Fluorinert). Devices made with this technology show a good large signal-frequency behavior. Various issues regarding breakdown measurements and interpretation of measurement results are presented.