Investigation of room-temperature multiwavelength fiber-ring laser that incorporates an SOA-based phase modulator in the laser cavity

A theoretical and experimental study of a multiwavelength fiber-ring laser that incorporates a semiconductor optical amplifier (SOA) in the laser cavity as a phase modulator to suppress the homogeneous line broadening is presented. The analysis reveals that the phase shift introduced by the SOA-based phase modulator is more significant than that formed using a LiNbO/sub 3/ phase modulator, which leads to a better suppression of the homogeneous line broadening. Multiwavelength lasing with small wavelength spacing and improved stability at room temperature is achieved. A fiber-ring laser based on the proposed approach is implemented. Stable multiwavelength operation with up to 26 wavelengths and wavelength spacing as small as 0.19 nm at room temperature is demonstrated.     

Wavelength-tunable narrow-linewidth semiconductor fiber-ring laser

A passive sub-ring was inserted into a semiconductor fiber-ring laser as the Vernier configuration to enable stable lasing spectrum. Wavelength tuning over 20 nm and fine tuning of less than 0.0001 nm were obtained by rotating the polarization controller and adjusting the voltage on the phase modulator, respectively. A narrow linewidth of less than 10 kHz and a sidemode suppression ratio of higher than 35 dB were demonstrated with single longitudinal-mode operation     

24-line multiwavelength operation of erbium-doped fiber-ring laser

Simultaneous lasing at up to 24 wavelengths is demonstrated in an erbium-doped fiber-ring laser using a simple design. This result is achieved using a low-loss cavity, controlled polarization evolution and liquid nitrogen cooling to enhance spectral hole-burning, polarization hole-burning, and polarization selectivity. The design does not include any wavelength-selective components; instead, it utilizes wavelength selectivity provided by polarization evolution in the cavity. The amplitude variation between emission peaks is less than 3 dB over a 17-nm spectral range. A narrow linewidth of 0.15 nm, dense line spacing of 1.1 nm, and a good signal-to-noise ratio of more than 30 dB are achieved over most of the erbium bandwidth. The comb spectrum location and width are adjustable by changing and adjusting cavity components.     

Observation of acetylene molecular absorption line with tunable, single-frequency, and mode-hop-free erbium-doped fiber ring laser

We succeeded in observing one of the absorption lines of acetylene [P(16)] using an erbium-doped fiber-ring laser, which is the first such observation using a fiber-ring laser. The observed linewidth of the P(16) linear absorption was approximately 450 MHz. Mode competition and mode hopping were suppressed by using an ultra narrow-band fiber Bragg grating and a Fabry-Perot filter in the ring laser, respectively. Wavelength fine-tuning was carried out by changing the cavity length of the fiber-ring laser; the fine-tuning range was about 850 MHz (0.01 nm). Furthermore, wavelength tuning was achieved by controlling the temperature of the fiber Bragg grating, and the coarse timing range was about 0.2 mn.     

Low chirp observed in directly modulated quantum dot lasers

We have examined the dynamic properties of high-aspect-ratio InAs-quantum-dot (QD) lasers at room temperature. A novel characteristic of low chirp in the lasing wavelength under 1-GHz current modulation was found in the quantum dot lasers. This is more than one order of magnitude less than the typical chirp (0.2-nm) found in a conventional quantum well laser that we used as a reference. Low chirp was obtained not only in the ground state lasing but in the second level lasing of quantum dots as well.     

A new transfer matrix formalism for the analysis of fiber ringresonators: compound coupled structures for FDMA demultiplexing

A method of analyzing fiber-ring resonators which is based on the transfer matrix technique is presented. The method is described and used to analyze known structures and compound coupled-ring resonators. Application of these structures as demultiplexers in FDMA (frequency-division multiple-access) systems is discussed     

SiGe HBT低噪声放大器的设计与制造

该文设计和制作了一款单片集成硅锗异质结双极晶体管(SiGe HBT)低噪声放大器(LNA)。由于放大器采用复合型电阻负反馈结构,所以可灵活调整不同反馈电阻,同时获得合适的偏置、良好的端口匹配和低的噪声系数。基于0.35 m Si CMOS平面工艺制定了放大器单芯片集成的工艺流程。为了进一步降低放大器的噪声系数,在制作放大器中SiGe器件时,采用钛硅合金(TiSi2)来减小晶体管基极电阻。由于没有使用占片面积大的螺旋电感,最终研制出的SiGe HBT LNA芯片面积仅为0.282 mm2。测试结果表明,在工作频带0.2-1.2 GHz内,LNA噪声系数低至2.5 dB,增益高达26.7 dB,输入输出端口反射系数分别小于-7.4 dB和-10 dB。     

Noise analysis of conventional and gain-clamped semiconductoroptical amplifiers

We present a numerical study of the noise of conventional and gain-clamped semiconductor optical amplifiers (SOAs), using a detailed device model. The model makes use of a density-matrix gain calculation, and takes into account the forward and backward amplified spontaneous emission (ASE) spectra and the spatial carrier hole-burning. The device is longitudinally divided into M sections and a rate equation for averaged photon and carrier densities is used for each section. We demonstrate that the accuracy on the calculated noise figure strictly depends on the number of sections M. We obtain a good tradeoff between the results accuracy and the computational complexity with M=8. The model is then applied to study the noise in a distributed Bragg reflector (DBR)-type gain-clamped SOA for varying signal power, pump current, and lasing wavelength. We show that changes in the spatial carrier profile caused by the input signal significantly affect the noise figure, even when the gain is constant. A slight dependence of the noise figure on lasing wavelength is also foreseen, while the dependence on the pump current is negligible. A new method for gain-clamped SOA noise figure reduction is proposed, based on unbalanced Bragg reflectors. An improvement of noise figure (NF) as large as 2 dB is devised     

一种新型低噪声掺Er光纤放大器的研究

提出了一种新型的低噪声掺Er光纤放大器(EDFA)。将光波长交错器的输入端口与普通EDFA的输出端相连接,用于降低噪声,信号光由光波长交错器的偶信道端口输出。利用光波长交错器的梳状反射特性,抑制EDFA的放大自发辐射(ASE),改善EDFA的噪声特性,使其具有低噪声的特点。采用4m长的掺Er光纤(EDF)作为增益介质,小信号功率为-26dBm时,在1530～1560nm带宽范围内,测得低噪声EDFA的噪声系数低于3.83dB,仅比噪声系数的量子极限3dB大0.83dB。     

3-10 GHz low-power, low-noise CMOS distributed amplifier using splitting-load inductive peaking and noise-suppression techniques

A CMOS distributed amplifier (DA) with flat and low noise figure (NF), and flat and high gain (S ₂₁) is demonstrated. A flat and low NF was achieved by adopting a RL terminating network for the gate transmission line, and a slightly under-damped Q-factor for the second-order NF response. Besides, flat and high S ₂₁ was achieved using the proposed cascade gain cell, which constitutes a cascode-stage with a low-Q RLC load and a splitting-load inductive-peaking inverter stage. In the high-gain (HG) mode, the DA consumed 27.6 mW and achieved S ₂₁ of 17.5 plusmn 1.23 dB with an average NF of 3.24 dB over the 3-10 GHz band, one of the best reported NF performances for a CMOS UWB DA or LNA in the literature. The measured IIP3 was 2.1 dBm (at 8 GHz). In the low-gain (LG) mode, the DA achieved S ₂₁ of 10.74 plusmn 1.2 dB and an average NF of 4.67 dB with a low power dissipation of 9 mW.     

低阈值连续波工作的2.9 THz量子级联激光器

为了获得低阈值连续波工作太赫兹源,采用固源分子束外延技术生长了GaAs/AlGaAs束缚态向连续态跃迁的太赫兹量子级联激光器(QCL)有源区,基于半绝缘-等离子体波导工艺制作了太赫兹量子级联激光器。获得了激光器(腔面未镀高反射膜)的发射光谱和相应的输出特性等性能,其中器件在10 K工作温度、350 mA激励电流下的中心频率为2.93 THz,连续波工作模式的阈值电流密度为156 A/cm2,器件的最大光输出功率为7.84 mW,最高工作温度为62 K。     

Multiwavelength Raman fiber-ring laser based on tunable cascaded long-period fiber gratings

Multiwavelength Raman fiber lasers using intracavity tunable cascaded long-period fiber gratings (LPFGs) are discussed. The application of the cascaded LPFGs as a multichannel fiber filter for the multiple-wavelength generation is proposed and experimentally demonstrated. The characteristics of multiwavelength fiber-ring lasers can be controlled by changing the physical parameters of cascaded LPFGs such as the separation distance between the gratings, grating length, and number of gratings. The multiwavelength Raman fiber-ring laser with nine wavelength-division-multiplexing channels with 100-GHz spacing and 19 channels with 50-GHz spacing has been achieved by varying the physical parameters of cascaded LPFGs.     

A 400 MHz Low Noise Amplifier at Cryogenic Temperature for Superconductor Filter System

A cryogenic low noise amplifier （LNA） using Agilent high electron mobility transistor （HEMT） for 380 MHzto 480 MHz is designed and fabricated, and the excellent cryogenic performance in superconducting receiver front-end for communication system is achieved. A special input impedance matching topology is implemented to provide low noise figure （NF） and good input matching in this cryogenic LNA design. The measurement results show that the NF is within 0.25 dB from the minimum NF of a single transistor, the power gain is above 20 dB, the flatness is within 1 dB, and the maximum input return loss is lower than -20 dB in bandwidth.     

Exciton Dynamics and Optically Pumped Lasing in 1-Naphthylmethylamine-Based Quasi-2D Perovskite Films

Films of the quasi-2D perovskite based on 1-naphthylmethylamine (NMA) are promising as the gain medium for optically pumped lasing and future electrically pumped lasing because of its low lasing threshold and small electroluminescence efficiency rolloff. However, reasons for the low threshold and small efficiency rolloff are still unclear. Therefore, exciton dynamics are investigated in NMA-based quasi-2D perovskite films. It is found that quenching of bright excitons by other excitons or charge carriers is unlikely in NMA-based quasi-2D perovskite films, which is one reason for the low lasing threshold and small efficiency rolloff. Moreover, thermally stimulated current measurements reveal that the defect levels inside the band gap of the NMA-based quasi-2D perovskite are shallow, with a depth of ≈0.3 eV, causing a decrease in nonradiative exciton recombination through the defects. Therefore, population inversion can be easily achieved, leading to the low lasing threshold as well. For fabrication of NMA-based quasi-2D perovskite laser devices with even lower lasing thresholds, a circular-shaped optical resonator, and small-molecule-based defect passivation are used. Optically pumped lasing can be obtained from these devices, with a threshold of ≈1 µJ cm⁻², which is one of the lowest values ever reported in any perovskite lasers.     

Bidirectional single-mode Er-doped fiber-ring laser

A Faraday rotator is used in a laser cavity to eliminate spatial hole burning in a bidirectional Er-doped fiber-ring laser. A stable operation is achieved in single longitudinal mode with comparable intensities for both clockwise and counter-clockwise directions. A beat signal between the clockwise and the counter-clockwise laser outputs of 40 dB above noise and of about 30% fringe visibility is observed.     

All-optical wavelength conversions based on MgO-doped LiNbO/sub 3/ QPM waveguides using an EDFA as a pump source

We propose and demonstrate cascaded /spl chi//sup (2)/ wavelength conversion in an MgO-doped LiNbO/sub 3/ quasi-phase-matched waveguide at reduced pump cost by using only an erbium-doped fiber amplifier (EDFA) as the exclusive pump source in a fiber-ring resonator. A fiber Bragg grating in conjunction with an optical circulator isolates the pump light and confines it to the resonator. A conversion efficiency of -30 dB was obtained with a 3-dB gain-saturation output power of only +12 dBm from the EDFA. It is anticipated that -14-dB conversion efficiency is possible, if an EDFA with a 3-dB gain-saturation output power of +20 dBm is used.     

Dual-wavelength laser source monolithically integrated with Y-junction coupler and isolator using quantum-well intermixing

A dual-wavelength laser source monolithically integrated with an isolator and a Y-junction coupler is fabricated by using a new quantum-well intermixing technique. The technique employs a buried Ge layer between the sample surface and the spin-on silica film to control the bandgap tuning in selective areas across a wafer. The integrated isolator can avoid the crosstalk between the two channels of the device. Two distinct lasing wavelengths of 950 and 969 nm are coupled into one single output port through the transparent Y-junction coupler. The two channels have similar threshold current and slope efficiency.     

Water soluble blue-green lasing dyes for flashlamp-pumped dye lasers

2-(4-Pyridyl)-5-phenyloxazole (4PyPO) and its pyridinium salts have been investigated for laser action in the violet and blue-green spectral regions, respectively. The phenyloxazolyl pyridinium salts show good lasing characteristics, broad tuning ranges, and superior photochemical stability when compared with coumarin 175 in water. Recommendations were made on how the lasing maxima could be blue or red shifted and how the output power and photochemical stability of the new classes of laser dyes could be made to approach that of C8F, which is one of the most photochemically stable lasing dyes reported to date. Because of the reactivity of the nonbonding electrons on the pyridyl group of 4PyPO, hundreds of new laser dyes are possible from the parent dye. A new generation of water soluble, low threshold multifluorophoric laser dyes capable of intramolecular energy transfer and intramolecular triplet state quenching was proposed.     

A 0.18μm CMOS Gilbert low noise mixer with noise cancellation

正This paper presents a broadband Gilbert low noise mixer implemented with noise cancellation technique operating between 10 MHz and 0.9 GHz.The Gilbert mixer is known for its perfect port isolation and bad noise performance.The noise cancellation technique of LNA can be applied here to have a better NF.The chip is implemented in SMIC 0.18μm CMOS technology.Measurement shows that the proposed low noise mixer has a 13.7-19.5 dB voltage gain from 10 MHz to 0.9 GHz,an average noise figure of 5 dB and a minimum value of 4.3 dB.The core area is 0.6 x 0.45 mm~2.     

Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser

We report on the lasing characteristics of InAs/InP(100) quantum dots laser through changing the temperature under continuous-wave mode. Three lasing peaks are simultaneously observed at temperature of 80 K and the lasing order of each peak is unrelated with each other when injection current increases. Laser spectra obtained under fixed current for different temperatures show a drastic influence on their shape. A large spectral broadening is observed at low temperature, while the width of lasing spectra gradually narrows when the operating temperature increased. The lasing process of quantum dot laser is obviously different from that of a reference quantum well laser in the same wavelength region. In addition, very high wavelength stability of 0.088 nm/K in the temperature range of 80–300 K is obtained, which is 6.2 times better than that of reference quantum well laser.