脉冲激光沉积法制备VO_2热致变色薄膜研究进展

基于半导体和金属间的相变特性,伴随着温度、电场、压力的变化,具有相关智能特性的VO_2薄膜材料具有较大的应用潜力.本文主要阐述脉冲激光沉积技术在制备金属氧化物方面的物理过程和技术特点,详细介绍脉冲激光沉积制备VO_2薄膜材料的工艺参数和国内外研究进展,并与几种常规制备方法进行对比,给出脉冲激光沉积掺杂对VO_2薄膜材料特性的影响,以及采用脉冲激光沉积制备VO_2纳米材料,讨论了脉冲激光沉积制备具有智能特性的VO_2薄膜材料存在的问题和发展方向.     

用基片曲率法测量薄膜应力

采用基片曲率法设计和制作了一种测量薄膜应力的装置，它具有简单、无损伤、快速、易于操作、精度高的优点。使用该装置测量了射频磁控溅射镀制的Cu单层膜和Ag／Cu多层膜的应力，结果表明薄膜残余应力是均匀的，但随沉积条件不同而不同。Cu单层膜和Ag／Cu多层膜处于压应力状态，外加-200V偏压时，Ag／Cu多层膜则转变为很小的拉应力状态。XRD表明Ag／Cu多层膜已结晶，呈现Ag(111)／Cu(111)择优取向。     

Si(100)衬底上PLD法制备高取向度AlN薄膜

采用脉冲激光沉积法(PLD),以KrF准分子为脉冲激光源,Si(100)为衬底,同时引 入缓冲层TiN和Ti_0.8Al_0.2N,制备了结晶质量优异的A1N薄膜,X射线衍射(XRD)及反射 式高能电子衍射(RHEED)分析表明A1N薄膜呈(001)取向、二维层状生长.研究发现,薄膜 的生长模式依赖于缓冲层种类,直接在Si衬底上或MgO／Si衬底上的A1N薄膜呈三维岛状生 长;而同时引入缓冲层TiN和Ti_0.8Al_0.2N时,A1N薄膜呈二维层状生长.此外,激光能量密 度大小对A1N薄膜的结晶性有显著的影响,激光能量密度过大,薄膜表面粗糙,有颗粒状沉积 物生成.在氮气气氛中沉积,能使薄膜的取向由(001)改变为(100).     

脉冲激光沉积氢化锂薄膜(英文)

用脉冲激光沉积制备了氢化锂薄膜,对薄膜的结构和表面形貌进行了,给出了氢气压和靶基距与沉积速率的关系。运用扫描电镜和X射线衍射仪测试薄膜的性质。测试结果显示,氢气压为10-1mbar时,薄膜表面粗糙且呈现多晶态。对薄膜粗糙度与氢气压的关系进行了讨论。     

脉冲激光沉积有机薄膜

脉冲激光沉积(PLD)技术是一门新兴的薄膜制备技术,在无机薄膜的制备和研究方面取得了令人满意的成果,技术也比较成熟.但利用脉冲激光沉积技术制备和研究有机膜方面的工作开展较晚,工作也比较少,尚未形成一个比较系统的体系.因此开展有机薄膜的脉冲激光沉积研究将具有重要的意义.     

脉冲激光沉积ZrW2O8薄膜的制备和性能

采用脉冲激光沉积法在石英基片上沉积制备了ZrW2O8薄膜.用X射线衍射仪(XRD)、原子力显微镜(AFM)研究了不同衬底温度对薄膜结构组分、表面粗糙度和形貌的影响,用台阶仪和分光光度计测量薄膜的厚度和不同衬底温度下制备薄膜的透射曲线,用变温XRD分析了ZrW2O8薄膜的负热膨胀特性.实验结果表明:在衬底温度为室温、550℃和650℃下脉冲激光沉积的ZrW2O8薄膜均为非晶态,非晶膜在1200℃保温3min后淬火得到立方相ZrW2O8薄膜;随着衬底温度的升高,ZrW2O8薄膜的表面粗糙度明显降低;透光率均约为80%,在20～600℃温度区间内,脉冲激光沉积制备的ZrW2O8薄膜的负热膨胀系数为-11.378×10-6 K-1.     

功能薄膜电化学沉积技术的新进展

电化学技术被广泛用于新型材料和结构的制备研究中。本文结合作者正在开展的研究工作，综述近年来电化学技术在半导体薄膜、氧化物超导薄膜、导电聚合物以及复合功能材料制备中的应用。该技术及其所制备的材料在光电转换、光开关和量子激光器等方面将获得广泛的应用。     

Young's Modulus Measurement of Thin Films by Resonant Frequency Method Using Magnetostrictive Resonator

At present, there are many methods about Young's modulus measurement of thin films, but so far there is no recognized simple, non-destructive and cheaper standard measurement method. Considering thin films with various thicknesses were sputter deposited on the magnetostrictive resonator and monitoring the resonator's first-order longitudinal resonant frequency shift both before and after deposition induced by external magnetic field, an Young's modulus assessing method based on classical laminated plate theory is presented in this paper. Using the measured natural frequencies of Au, Cu, Cr, Al and SiC materials with various thicknesses in the literature, the Young's modulus of the five materials with various thicknesses are calculated by the method in this paper. In comparison with the Young's modulus calculated by the other methods, it is found that the calculated Young's modulus for various thicknesses are in good agreement with the Young's modulus values in the literature. Considering the simple and non-destructive characteristics of this method, which can effectively describe the effect of the thickness on the Young's modulus, it has the potential to become a standard assessing method of thin film Young's modulus.     

纳米复合薄膜的制备及其应用研究

纳米复合薄膜材料由于具有传统复合材料和现代纳米材料两者的优点,正成为纳米材料的重要分支而越来越引起广泛的重视和深入的研究。本文全面介绍了纳米复合薄膜的发展历史、制备方法、薄膜性能及其应用前景。提出了纳米复合薄膜材料研究的关键问题以及今后的发展方向。     

气氛氧压对脉冲激光法制备的CeO2/Si薄膜的结晶取向的影响

用脉冲激光镀膜法,在不同的温度和氧压条件下,在Ｓｉ（１００）片上制备了一系列的ＣｅＯ２膜。Ｘ射线衍射分析表明,在较低的氧压下生长的ＣｅＯ２膜为（１１１）取向,在较高的氧压了生长的膜则为（１００）取向。研究表明,ＣｅＯ２膜的取向对氧压显示了独特的依赖性,氧压对控制膜的结晶取向具有十分重要的作用。讨论了氧压对ＣｅＯ２薄膜结晶取向影响的可能机理。     

Thermal Diffusivity Measurement for Titanium Thin Films on Copper Substrate by Laser Produced Plasmas

The transport properties of condensed phase materials are, in principle, dependent on the local structure and composition of the specimen. This is particularly evident near the free surface of a solid alloy specimen where the morphology, composition, and thermal diffusivity exhibit significant depth dependence, as demonstrated in an earlier study of the depth-resolved thermal diffusivity of a galvanized steel specimen. A new non-contact method was used, based on time-resolved, spectroscopic measurement of the total mass removed from the specimen surface representatively in elemental composition by a high-power laser pulse. A new study of a titanium thin film of varying thickness deposited on a copper substrate is presented. The titanium thin film is first fabricated in a vacuum and then immediately analyzed for composition and thermophysical properties in situ, both by the method of representative laser-produced plasmas (LPP). Successive ablation layers of the thin film, as exposed by LPP ablation, have revealed the dependence of the thermophysical properties on film thickness as well as on depth. The existence of a characteristic length over which the substrate influences the dynamics of thermal transport in the titanium thin film has also been observed.     

通过氧化Cu膜制备Cu_2O薄膜

通过热蒸镀Cu膜并在空气中退火制备Cu2O薄膜,利用X射线衍射(XRD)、能量分散X射线谱(EDX)和原子力显微镜(AFM)研究了已沉积和不同温度退火薄膜的晶体结构、成份和表面形貌。结果表明,Cu膜在200℃退火30分钟可以得到具有单一成份的Cu2O薄膜。四探针测量得到所制备的Cu2O薄膜电阻率为0.22Ωcm。用紫外可见光分光光度计(UV-vis)研究了Cu2O薄膜的光学特性,得出其光学带隙为2.4eV。     

氧化物薄膜电化学沉积的研究进展

综述了氧化物薄膜电化学沉积的工艺条件与参数及其影响，给出了氧化物薄膜沉积的对象，描述了氧化物薄膜的作用和用途。     

电沉积方法制备功能性金属化合物薄膜

本文综述了电沉积方法制备具有超导,电致变色特性的金属氧化物薄膜和具有半导体特性的金属化合物薄膜的基本方法,沉积原理,薄膜性能及存在问题,并对今后的发展进行了展望。     

Solution Combustion Synthesis: Low‐Temperature Processing for p‐Type Cu:NiO Thin Films for Transparent Electronics

Low‐temperature solution processing opens a new window for the fabrication of oxide semiconductors due to its simple, low cost, and large‐area uniformity. Herein, by using solution combustion synthesis (SCS), p‐type Cu‐doped NiO (Cu:NiO) thin films are fabricated at a temperature lower than 150 °C. The light doping of Cu substitutes the Ni site and disperses the valence band of the NiO matrix, leading to an enhanced p‐type conductivity. Their integration into thin‐film transistors (TFTs) demonstrates typical p‐type semiconducting behavior. The optimized Cu_5%NiO TFT exhibits outstanding electrical performance with a hole mobility of 1.5 cm² V^?1 s^?1, a large on/off current ratio of ≈10⁴, and clear switching characteristics under dynamic measurements. The employment of a high‐k ZrO₂ gate dielectric enables a low operating voltage (≤2 V) of the TFTs, which is critical for portable and battery‐driven devices. The construction of a light‐emitting‐diode driving circuit demonstrates the high current control capability of the resultant TFTs. The achievement of the low‐temperature‐processed Cu:NiO thin films via SCS not only provides a feasible approach for low‐cost flexible p‐type oxide electronics but also represents a significant step toward the development of complementary metal–oxide semiconductor circuits.     

Characterisation of Photocathodes Based on Pb Thin Film Deposited by UV Pulsed Laser Ablation简

This work deals with the deposition of lead(Pb) thin films by the U V pulsed laser ablation technique,for their further use as photocathode devices in superconducting radio frequency guns.Scanning electron microscopy and atomic force microscopy analyses were performed to study the morphological features of Pb thin films deposited on Si(100) and Nb substrates.The films showed a granular structure with a nearly fully covered surface only for that one deposited on Nb substrata X-ray diffraction measurements indicate the growth of polycrystalline Pb thin films with a preferential orientation along(111) planes.Results of the photoemission performance of Pb thin film deposited on Nb substrate showed a very encouraging average value of quantum efficiency of 6×10~(-5) through a single-photon absorption process,promoting further studies in the realisation of Pb photocathodes by this techniqua     

脉冲激光沉积制备SnS薄膜及其光学特性的研究

利用脉冲激光沉积法在玻璃衬底上制备SnS薄膜,研究了SnS薄膜的晶体结构、表面形貌以及有关光学特性。所制备的SnS薄膜样品为斜方晶系多晶结构,在(111)晶面上有很强的择优取向性;衬底温度在100~400℃范围内,表面形貌有所区别,随着温度升高,薄膜表面分别呈现大小晶粒共存、片状颗粒、针状颗粒和锥状颗粒的形貌特征;紫外区的SnS薄膜透过率极低,可见光范围的透过率很低,近红外区的透过率较大;样品在可见区和紫外区吸收强烈,吸收系数达105cm-1量级,直接禁带宽度为1.39~1.46 eV。     

铁电薄膜电滞回线测量研究

在总结铁电材料测量理论基础上，运用相量的概念从理论上导出了铁电薄膜的线性感应电容和漏导对测量电滞回线所产生的影响。根据铁电薄膜的特性与实测结果分析了电极和测试信号的频率对测量的影响，提出了在测试过程中对铁电薄膜制备微电极和适当提高测试信号频率的优越性。     

用KrF准分子脉冲激光在低基板温度下制备AlN薄膜的研究

用KrF准分子脉冲激光在 2 0 0℃的Si(111)基板上通过改变制备条件 ,采用沉积后直接保温处理的方式制备出了具有不同择优取向的AlN薄膜 ,并得出了较高的处理温度和过长的时间不利于AlN相的形成的结论。