基于多层结构的宽阻带SIW带通滤波器

近年来，多层结构的基片集成波导(SIW)带通滤波器因其结构紧凑的优点得到研究者们的青睐，与此同时，阻带带宽窄的缺点又阻碍了滤波器的发展。为了提升滤波器的阻带性能，提出一种基于多层结构的宽阻带SIW带通滤波器。将滤波器的内外耦合窗口设置在模式的最弱电场处，从本质上抑制该模式。同时引入电磁混合耦合理论，分析特定模式的电磁分布情况，并根据HFSS软件提取的耦合系数设计耦合孔径的大小和位置，实现对特定模式的抑制。仿真结果显示可以完全抑制谐振频率低于TE₃₀₃模以内的所有高次模。实际加工并测量了该滤波器，中心频率为5.9 GHz,相对带宽为2.54%,阻带可以延伸至17.42 GHz (2.95f₀,f₀为滤波器中心频率),且带外抑制优于28 dB,仿真和测量结果显示两者吻合度较好。与其他SIW滤波器相比，该方法设计简单、带宽可调、阻带更宽，易于应用到实际的微波通信系统中，具有潜在的应用价值。     

SIR实现的新型毫米波UWB滤波器

提出了一个用阶跃阻抗谐振器(SIR)实现的毫米波超宽带(UWB)滤波器。滤波器的基本单元是一个由半波长微带线谐振器和SIR组成的三模谐振器。该谐振器采用SIR结构,从而达到阻带宽、结构紧凑,且能很好地改善带外抑制。为了进一步改善阻带特性,该三模谐振器与半波长谐振器平行耦合形成新型的滤波器。该滤波器有多个传输极点和传输零点,形成陡峭的通带边缘特性和很宽的阻带。实验测得滤波器的-3 dB相对带宽为35.7%,通带内的插入损耗约为-1.7 dB。插入损耗低于-17 dB的高频端阻带可到76 GHz。滤波器的仿真结果和测试结果基本吻合。     

低频大带宽声表面波滤波器

介绍了一种低频大带宽声表面波滤波器(SAWF)的设计方法，并介绍了最新研制的滤波器的性能。其中心频率16．28MHz，通带波动1．0dB，插入衰耗23dB，阻带抑制达40dB。     

一种基于正方环形谐振器的新型宽带带通滤波器

本文设计了一种紧凑型、宽通带、宽阻带的微带带通滤波器。该滤波器的设计是基于带有两个开路调节支节的正方谐振环。基于紧凑性的考虑,改变了传统方环谐振滤波器的馈电点和开路调节支节的位置,以便对谐振环进行折叠处理。这种改变并不影响谐振环的奇偶模特性。在输入和输出端口,通过两个叉指耦合结构对滤波器进行馈电,这种馈电方式增加了滤波器阻带的带宽和抑制度。滤波器的中心频率为4GHz,相对带宽为45％,通带内的回波损耗小于-12dB,群时延小于0．8ns,1-2．9GHz阻带抑制度大于12dB,5．3～7GHz阻带抑制度大于18dB。     

半模基片集成波导带通滤波器的设计

给出了一种新型半模基片集成波导（HMSIW）带通滤波器的设计和实验方案。该设计利用了半模基片集成波导的高通性质与周期性缝隙的带阻性质来产生带通滤波器的效果。设计的滤波器的中心频率在8GHz,带宽在12．5％左右,通带内插入损耗在1dB以下,回波损耗在-15dB以下,同时具有一定的带外抑制和良好的通带和阻带特性。文章最后用Ansoft HFSS软件进行了仿真实验。     

恒定阻带抑制矩阵滤波器性能分析

在任意传感器阵型恒定阻带抑制矩阵滤波器设计的基础上,全面讨论了影响恒定阻带抑制矩阵滤波器性能的因素。矩阵滤波器设计问题可转化为二阶锥规划问题,通过求解二阶锥规划及重排可得所需的矩阵滤波器。分析并得出阻带响应、通带位置、通带带宽及阵元数等因素变化对矩阵滤波器性能的影响,为矩阵滤波器的设计和应用提供了依据。     

滤波器耦合槽直径对其性能的影响仿真

采用高频结构模拟软件模拟1／4λ同轴型带通微波陶瓷滤波器结构,讨论了耦合槽直径对滤波器的性能如带宽、插损、带内波动、阻带抑制等的影响。结果表明,随着耦合槽直径的增大,滤波器中心频率、插入损耗和阻带抑制减小,3dB带宽增大。讨论结果表明,可通过调整滤波器耦合槽直径的大小,得到理想性能的介质滤波器。     

基于双方环结构的超宽带平衡滤波器设计

平衡滤波器因具有卓越的抗噪声及抗电磁干扰能力而在繁杂频谱环境下的低噪通信系统中显得至关重要。该文提出了一款具有共模抑制特性的平衡滤波器,通过差共模理论结合导纳矩阵及传输矩阵完成了分析设计。该滤波器中心频率为1．4 GHz,相对带宽可达74．3%,覆盖2G、GPRS、3G及4G LTE频段。同时该滤波器的边带具有两对传输零点,故其具有理想的边带滚降速度及边带抑制水平。滤波器全差模通频带内共模信号抑制水平均优于10 dB,差模阻带抑制优于20 dB,电路尺寸仅为0．17λ_g×0．17λ_g。     

一种新型介质栅波导滤波特性的研究

提出了一种新型介质栅波导阻带滤波结构,并采用多模网络与严格模匹配相结合的方法对该阻带滤波特性进行了仔细分析,给出了主模TM模的Brillouin图及滤波结构的归一化中心频率、阻带的宽度和带内最大衰减等特性和结构参数的关系.与传统的介质栅滤波器相比,新滤波器结构不仅具有金属损耗小的优点,而且其阻带带宽和带内衰减都要比传统介质栅滤波器的大得多.文中所给出的计算结果对设计该新型带阻滤波结构有指导意义.     

改进的电磁混合耦合SIW超宽阻带滤波器设计

为了提升滤波器的阻带性能,提出了一种改进的电磁混合耦合基片集成波导(Substrate Integrated Waveguide,SIW)超宽阻带滤波器的设计。首先,利用模式的本征抑制和电磁混合耦合方法,合理地设置外部馈电端口、内部耦合窗口及内部耦合圆孔阵列,抑制了频率低于TE₁₀₅和TE₅₀₁的所有高次模;其次,利用耦合槽的偏移,在中间金属层侧壁中心约为1/10腔体宽度处刻蚀耦合槽,可同时抑制TE₁₀₅和TE₅₀₁以及TE₃₀₅和TE₅₀₃模的耦合;最后,仿真结果显示,该滤波器的中心频率f₀=5.94GHz,相对带宽为3.37%,插入损耗为2.29 d B,回波损耗优于17.1 d B。当阻带宽度延伸至4.85f₀时,抑制深度优于20 d B。综上,探讨了基片集成波导超宽阻带滤波器的宽阻带抑制,有效延伸了阻带宽度,为移动通信系统进一步提升抗干扰性能奠定了技术基础。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.