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1.
A method is presented to determine the complex coefficients E/sub 33//sup T/, s/sub 11//sup E/, s/sub 12//sup E/, and d/sub 31/ of piezoelectric materials. The real parts of these coefficients are determined using axially polarized thin discs in the ANSI/IEEE Standard but are determined here using radially polarized cylindrical shells. The coefficients are determined by iteratively refining them until the values of the low-frequency complex admittance, three resonance frequencies, and three band-widths computed using a thin-shell analytical model and the coefficients are very nearly equal to measured values. The accuracy of the method is determined by using quantities computed using a finite-element model in place of measured values. Measurement errors are accounted for by using a resolution of 10 Hz to compute the critical frequencies. The differences between the coefficients input to the finite-element model and those obtained using the iteration method are the errors. It is shown that the method is sufficiently accurate to use thin radially polarized cylindrical shells to determine the properties of new materials as well as characterize those used in hydrophones or other devices.  相似文献   

2.
In vivo skin attenuation estimators must be applicable to backscattered radio frequency signals obtained in a pulse-echo configuration. This work compares three such estimators: short-time Fourier multinarrowband (MNB), short-time Fourier centroid shift (FC), and autoregressive centroid shift (ARC). All provide estimations of the attenuation slope (/spl beta/, dB.cm/sup -1/.MHz/sup -1/); MNB also provides an independent estimation of the mean attenuation level (IA, dB.cm/sup -1/). Practical approaches are proposed for data windowing, spectral variance characterization, and bandwidth selection. Then, based on simulated data, FC and ARC were selected as the best (compromise between bias and variance) attenuation slope estimators. The FC, ARC, and MNB were applied to in vivo human skin data acquired at 20 MHz to estimate /spl beta//sub FC/, /spl beta//sub ARC/, and IA/sub MNB/, respectively (without diffraction correction, between 11 and 27 MHz). Lateral heterogeneity had less effect and day-today reproducibility was smaller for IA than for /spl beta/. The IA and /spl beta//sub ARC/ were dependent on pressure applied to skin during acquisition and IA on room and skin-surface temperatures. Negative values of IA imply that IA and /spl beta/ may be influenced not only by skin's attenuation but also by structural heterogeneity across dermal depth. Even so, IA was correlated to subject age and IA, /spl beta//sub FC/, and /spl beta//sub ARC/ were dependent on subject gender. Thus, in vivo attenuation measurements reveal interesting variations with subject age and gender and thus appeared promising to detect skin structure modifications.  相似文献   

3.
Plastic deformation affects the hysteretic magnetic properties of steels because it changes the dislocation density, which affects domain-wall movement and pinning, and also because it places the specimen under residual strain. An earlier paper proposed a model for computing hysteresis loops on the basis of the effect of grain size d and dislocation density /spl zeta//sub d/. In that paper, hysteresis loops were compared that all had the same maximum flux density B/sub max/. The result was that coercivity H/sub c/ exhibited a linear relationship with inverse grain size (1/d) and /spl zeta//sub d//sup 1/2/. The same was true of hysteresis loss W/sub H/. If one compared hysteresis loops all with the same H/sub max/, these linear dependences were only approximately found. Because the relationships are simpler for loops of constant B/sub max/, core loss experimenters compare loops that all have the same B/sub max/. In this paper, we modify the model to study the effect of plastic tensile deformation on hysteresis loops with the same B/sub max/. We found linear relationships between H/sub c/ and residual plastic strain /spl epsiv//sub r/ and between W/sub H/ and /spl epsiv//sub r/. With increasing residual tensile strain, H/sub c/ increases (whereas with increasing elastic tensile strain, H/sub c/ decreases). Also, with increasing residual tensile strain, the slope of the hysteresis loop decreases (whereas with increasing elastic tensile strain, the slope increases). We also consider the effect of compressive plastic deformation.  相似文献   

4.
In this paper, a new method for determining the rheological parameters of viscoelastic liquids is presented. To this end, we used the perturbation method applied to shear vibrations of cylindrical piezoceramic resonators. The resonator was viscoelastically loaded on the outer cylindrical surface. Due to this loading, the resonant frequency and quality factor of the resonator changed. According to the perturbation method, the change in the complex resonant frequency /spl Delta/~/spl omega/ = /spl Delta/w/sup re/ + j/spl Delta//spl omega//sup im/ is directly proportional to the specific acoustic impedance for cylindrical waves Zc of a viscoelastic liquid surrounding the resonator, i.e., /spl Delta/~w /spl sim/ jZ/sub c/, where j = (-1)/sup 1/2/. Hence, the measurement of the real and imaginary parts of the complex resonant frequency determines the real part, R/sub c/, and imaginary part, X/sub c/, of the complex acoustic impedance for cylindrical waves Z/sub c/ of an investigated liquid. Further-more, the specific impedance Z/sub L/ for plane waves was related to the specific impedance Z/sub c/ for cylindrical waves. Using theoretical formulas established and the results of the experiments performed, the shear storage modulus /spl mu/ and the viscosity /spl eta/ for various liquids (e.g., epoxy resins) were determined. Moreover, the authors derived for cylindrical resonators a formula that relates the shift in resonant frequency to the viscosity of the liquid. This formula is analogous to the Kanazawa-Gordon formula that was derived for planar resonators and Newtonian liquids.  相似文献   

5.
A system based on a cryogenic current comparator is used to measure the quantized Hall resistance R/sub H/ in terms of Omega /sub 69-BI/, the Bureau International des Poids et Mesures (BIPM) representation of the ohm, with an uncertainty of 1.5*10/sup -8/. This measurement system and the former potentiometric one are in good agreement within their combined uncertainties (5.1*10/sup -8/).<>  相似文献   

6.
Externally applied electric fields play an important role in many therapeutic modalities, but the fields they produce inside cells remain largely unknown. This study makes use of a three-dimensional model to determine the electric field that exists in the intracellular domain of a 10-/spl mu/m spherical cell exposed to an applied field of 100 V/cm. The transmembrane potential resulting from the applied field was also determined and its change was compared to those of the intracellular field. The intracellular field increased as the membrane resistance decreased over a wide range of values. The results showed that the intracellular electric field was about 1.1 mV/cm for R/sub m/ of 10 000 /spl Omega//spl middot/cm/sup 2/, increasing to about 111 mV/cm as R/sub m/ decreased to 100 /spl Omega//spl middot/cm/sup 2/. Over this range of R/sub m/ the transmembrane potential was nearly constant. The transmembrane potential declined only as R/sub m/ decreased below 1 /spl Omega//spl middot/cm/sup 2/. The simulation results suggest that intracellular electric field depends on R/sub m/ in its physiologic range, and may not be negligible in understanding some mechanisms of electric field-mediated therapies.  相似文献   

7.
We examined the relationships between critical current, I/sub c/, and switching time, /spl tau//sub p/, for spin-transfer switching in two regions: (region I) /spl tau//sub p//spl Gt//spl tau//sub 0/, where thermal switching is accompanied and (region II) /spl tau//sub p/< several tens times /spl tau//sub 0/, where /spl tau//sub 0/ is the attempt time for thermal switching (/spl ap/1 ns). We estimated I/sub c0/, defined as the intrinsic I/sub c/ at 0 K, for both regions and confirmed experimentally that those I/sub c0/ coincided with each other at room temperature (RT). The value of I/sub c/ at /spl tau//sub p/=1 ns, measured with microwaves, was approximately 1.6 times the I/sub c0/. This suggested that we use at least two times I/sub c0/ as the writing currents of magnetic memory devices for nsec spin-transfer switching at RT. Although I/sub c0/ for both regions were defined as I/sub c/ at 0 K (I/sub c//sup 0K/) in theory, they showed temperature dependence at low temperatures; |I/sub c0/| for region I increased with decreasing temperature, and the estimated I/sub c//sup 0K/ was approximately three times I/sub c0/ for RT. This temperature dependence was quite different from that for region II.  相似文献   

8.
Multidimensional CMOS in-plane stress sensor   总被引:1,自引:0,他引:1  
This paper reports a novel multidimensional complementary metal-oxide semiconductor (CMOS) based stress sensor. The device uses an octagonal n-well in a p-substrate and eight peripheral contacts enabling the current to be switched in eight directions rotated by an angle of /spl pi//4. By taking full advantage of the piezoresistive behavior of single-crystal silicon, the measurement of all in-plane stress tensor components, i.e., /spl sigma//sub xx/, /spl sigma//sub yy/, and /spl sigma//sub xy/, is demonstrated. This information is derived from the zeroth and second angular-order Fourier components of voltage signals parallel and perpendicular to the switched current. Nonlinearities of the system are reduced by proper bias conditions using a center contact. The device was calibrated by applying defined normal stresses using a bending bridge setup. The device behavior was modeled including piezoresistive effects and the junction field effect by a combination of the finite element method and a nonlinear simulation program with integrated circuits emphasis (SPICE) network simulation using junction field effect transistor (JFET) elements. Stress sensitivities of 200 /spl mu/V V/sup -1/ MPa/sup -1/ are demonstrated for the determination of the three stress components.  相似文献   

9.
We deposited Fe-Ti-N magnetic films with a high sputtering power of 7 W/cm/sup 2/. When the composition of the films was in the range of Fe-Ti(3.9 at.%)-N(8.8 at.%) to Fe-Ti(3.3 at.%)-N(13.5 at.%), the films were composed of /spl alpha/' and Ti/sub 2/N precipitates. With the addition of nitrogen, 4/spl pi/M/sub s/ became higher than that of pure iron, reaching a maximum of 23.8 kG. At the same time, H/sub c/ was reduced to a minimum of 1.12 Oe. The best films can meet the needs of the recording head in dual-element giant magnetoresistive/inductive heads, yielding high storage density (10 Gb/in/sup 2/). The incorporation of N in /spl alpha/-Fe brought about the /spl alpha/' phase with its higher saturation magnetization. Ti additions inhibited the equilibrium decomposition /spl alpha/'/spl rarr//spl alpha/+/spl gamma/'. Because H/sub C//sup D//spl prop/D/sup 6/, where D is average grain diameter, grain size control is very important. The nitrogen induces severe distortion of the /spl alpha/' lattice, which can cause the grains to break into pieces and reduce the grain size. High sputtering power also led to the formation of fine grains, with diameter in the order of 14 nm. Probably Ti/sub 2/N is preferentially precipitated on the grain boundary, pinning the grain boundary and stabilizing the grain size during high-temperature heat treatment. The temperature limit for stability of the structure and its associated low coercivity was not less than 520/spl deg/C.  相似文献   

10.
11.
For rectangular prisms of dimensions 2a/spl times/2b/spl times/2c with constant material susceptibility /spl chi/, we have calculated and tabulated the fluxmetric and magnetometric demagnetizing factors N/sub f/ and N/sub m/, defined along the 2c dimension as functions of c/(ab)/sup 1/2/(=1/spl sim/500), a/b(=1/spl sim/256), and /spl chi/(=0/spl sim/10/sup 9/). We introduce an interpolation technique for obtaining N/sub f,m/ with arbitrary values of c/(ab)/sup 1/2/, a/b, and /spl chi/.  相似文献   

12.
Ultrahigh-sensitivity SnO/sub 2/-CuO sensors were fabricated on Si(100) substrates for detection of low concentrations of hydrogen sulfide. The sensing material was spin coated over platinum electrodes with a thickness of 300 nm applying a sol-gel process. The SnO/sub 2/-based sensors doped with copper oxide were prepared by adding various amounts of Cu(NO/sub 3/)/sub 2/.3H/sub 2/O to a sol suspension. Conductivity measurements of the sensors annealed at different temperatures have been carried out in dry air and in the presence of 100 ppb to 10-ppm H/sub 2/S. The nanocrystalline SnO/sub 2/-CuO thin films showed excellent sensing characteristics upon exposure to low concentrations of H/sub 2/S below 1 ppm. The 5% CuO-doped sensor having an average grain size of 20 nm exhibits a high sensitivity of 2.15/spl times/10/sup 6/ (R/sub a//R/sub g/) for 10-ppm H/sub 2/S at a temperature of 85/spl deg/C. By raising the operating temperature to 170/spl deg/C, a high sensitivity of /spl sim/10/sup 5/ is measured and response and recovery times drop to less than 2 min and 15 s, respectively. Selectivity of the sensing material was studied toward various concentrations of CO, CH/sub 4/, H/sub 2/, and ethanol. SEM, XRD, and TEM analyses were used to investigate surface morphology and crystallinity of SnO/sub 2/ films.  相似文献   

13.
Temperature distributions under periodic thermal excitations and the responsivity of a pyroelectric device consisting of a cover layer, infrared absorber, metal contact, sensitive pyroelectric element, interconnecting column, and bulk silicon are found. Some results of numerical thermal modeling and analysis of exact expressions for a few extreme cases are presented. Pyroelectric responses of real structures are compared with the response of a single pyroelectric element in air as a limiting case of maximum sensitivity. The analytical approximations and numerical simulation show that the frequency response of the multilayered structure consists of different parts with simple frequency dependencies. In the region of high frequencies of light modulation, the responsivity is proportional to /spl omega//sup -1/, at low frequencies /spl sim/ /spl omega//sup -0.5/, and, in the region of intermediate frequencies, the voltage responsivity is independent of frequency.  相似文献   

14.
A disposable reagentless hydrogen peroxide biosensor based on the direct electrochemistry of hemoglobin immobilized on a colloidal gold-modified screen-printed carbon electrode (Hb-Au-SPCE) was proposed. The electrochemical behavior of immobilized Hb at a SPCE was studied for the first time. The electrode reaction of immobilized Hb showed a surface-controlled process with an electron transfer rate constant of (0.40 /spl plusmn/ 0.02) s/sup -1/ determined in the scan rate range from 25 to 200 mV s/sup -1/. The Hb-Au-SPCE exhibited an electrocatalytic activity toward the reduction of hydrogen peroxide with a K/sub M//sup app/ value of 1.8 mM, which was allowed to be used as a disposable sensor for determination of hydrogen peroxide with a linear range from 1.0 /spl times/ 10/sup -5/ M to 3.2 /spl times/ 10/sup -4/ M, a detection limit of 5.5 /spl times/ 10/sup -6/ M at 3/spl sigma/, a high sensitivity, fast response, and good selectivity, accuracy, and reproducibility. The disposable reagentless sensor was stable, low cost, and simple to use for detection of hydrogen peroxide in real samples.  相似文献   

15.
The magnetic anisotropy of CoPtCr-SiO/sub 2/ perpendicular recording media, including higher energy terms, was studied as a function of film composition and seed layer materials. All series of CoPtCr films with various Cr content, deposited on Ru seed layers, show maximum values of total anisotropy K/sub u/ at 25-30 at%Pt. The maximum value for CoPt(Cr=0) films reaches /spl sim/15/spl times/10/sup 6/ erg/cm/sup 3/. The addition of SiO/sub 2/ to the CoPtCr films reduces the grain K/sub u/, however the grain K/sub u/ maintains a large value of 8/spl times/10/sup 6/ erg/cm/sup 3/ even when 10at%SiO/sub 2/ is added to (Co/sub 90/Cr/sub 10/)/sub 80/Pt/sub 20/, for instance, which indicates the high-potential thermal stability. Theoretical calculations for media designs of 400 Gbits/in/sup 2/ revealed that the ratio of the high-energy anisotropy term K/sub u2/ to K/sub u1/(K/sub u/=K/sub u1/+K/sub u2/) is required to be 0.2-0.35 to enhance the energy barrier for the remanent state, without a notable change in switching field. The films deposited on Ru seed layers were found to show negligibly small K/sub u2/ values, however, the values of K/sub u1/ and K/sub u2/ vary significantly with the seed layer material used. K/sub u1/ decreases almost linearly as the K/sub u2/ value increases. It is concluded that CoPtCr films have a sufficient potential in the values of K/sub u1/ and K/sub u2/ for high-density perpendicular media.  相似文献   

16.
The line-focus-beam ultrasonic material characterization (LFB-UMC) system is applied to a standardized comparison and evaluation of the Curie temperatures, T/sub C/, exclusively used in evaluating the chemical compositions of commercial LiTaO/sub 3/ crystals by measuring the velocities of Rayleigh-type leaky surface acoustic waves (LSAWs), V/sub LSAW/. We measured V/sub LSAW/ and T/sub C/ (standardized) under the same T/sub C/ measurement conditions for 36/spl deg/Y X-LiTaO/sub 3/ single-crystal wafers produced by four manufacturers and related the results to the T/sub C/ (individual) measured by the individual manufacturers. The relationships between V/sub LSAW/ and T/sub C/ (individual) varied from one company to another, and a single straight line of the proportional relationship between V/sub LSAW/ and T/sub C/ (standardized) was obtained for all wafers regardless of the manufacturer. These experimental results clarify that the problem associated with T/sub C/ measurements lies in the measurement conditions and the absolute accuracy of the measurement instruments. Measurements of the center frequencies of SH-type surface acoustic wave (SAW) filter devices are compared with V/sub LSAW/ measurements. A method of calibrating T/sub C/ using this ultrasonic system is proposed to establish standardized specifications of SAW-device crystal wafers.  相似文献   

17.
The possibility of 300-500 Gbit/in/sup 2/ perpendicular recording using granular recording media has been investigated through micromagnetic simulation based on the Langevin equation. Writability and thermal stability in 10 years were obtained changing media parameters such as the grain size D, the grain separation d, and the thickness of the recording layer t/sub mag/ for proper combination of the grain saturation magnetization M/sub s-grain/ and the grain perpendicular anisotropy energy K/sub u-grain/. It was found that high-density recording is realized under the large grain separation, the large grain saturation magnetization, and the large grain anisotropy energy. The read/write calculation using ordered medium with D of 4.2 nm, d of 2.3 nm, t/sub mag/ of 12.0 nm, M/sub s-grain/ of 1313 emu/cm/sup 3/, and K/sub u-grain/ of 7.0 Merg/cm/sup 3/ confirmed the possibility of 1303 kFCI and 1954 kFCI perpendicular recording, leading to 325 and 488 Gbit/in/sup 2/ with 250 kTPI (track pitch of 102 nm).  相似文献   

18.
This paper presents a successful design, realization,and characterization of single-mode rib optical waveguides on SOG/SU-8 polymers in order to highlight a new approach to designing heat sensors. The basic principle of this new thermal-sensing method relies on the differential thermal behavior regarding both acting arms of a micro Mach-Zehnder Interferometer(MZI). First, two families of single-mode straight rib waveguides composed of SOG/SU-8 polymers are analyzed. Hence, optical losses for TE/sub 00/ and TM/sub 00/ optical modes for structures on Si/SiO/sub 2//SU-8 have been estimated respectively as 1,36 /spl plusmn/ 0,02 and 2,01/spl plusmn/0,02 dB/spl middot/cm/sup -1/, while the second one composed of Si/SiO/sub 2//SOG/SU-8 presented losses of 2,33 /spl plusmn/ 0,02 and 2,95/spl plusmn/0,02 dB/spl middot/cm/sup -1/. Then, owing to modeling results, an experimental sensor is realized as an integrated device made up of SU-8 polymer mounted on a standard silicon wafer. When subjected to a radiant source, as a laser light (980 nm) is injected across the cleaved input face of the MZI, the significant change of output signal allows us to consider a new approach to measuring radiant heat flowrate. Experimental results are given regarding the obtained phase shift against the subjected thermal power. According to the modeling results, one can expect new highly sensitive devices to be developed in the next coming years, with advantageous prospective industrial applications.  相似文献   

19.
Currently, the series resonant frequency f/sub s/ and the motional resistance Rm of liquid loaded quartz crystal microbalance (QCM) sensors are extracted either directly, through network analyzer (NWA) impedance measurements, or from QCM-stabilized oscillator circuits. Both methods have serious drawbacks that may affect measurement accuracy, especially if the sensor is operated under highly viscous load conditions and Rm exceeds 1 k/spl Omega/. This paper presents a simple passive low-loss impedance transformation LC network which greatly reduces additional electrical loading of the QCM by the measurement system or sensor electronics and maintains a symmetric resonance and a steep 0-phase crossing at f/sub s/, even if Rm increases by several orders of magnitude as a result of liquid loading. A simple S21 transmission measurement allows direct f/sub s/ reading at the 0-phase frequency, while Rm is obtained from the circuit loss at f/sub s/. Circuit operation was verified at 9 MHz by QCM measurements in a liquid with known density and viscosity. The agreement between predicted and experimental data, which was obtained by a temperature-controlled measurement, was within 1%, even in very high viscosity ranges in which Rm exceeds 10 k/spl Omega/.  相似文献   

20.
This paper presents the theoretical derivation for a method of accurately determining the complex coefficients of single crystal piezoelectric materials. The vibration equations are analytically solved for a piezoelectric plate and a piezoelectric thin rod in an arbitrary crystallographic orientation. The solutions provide the distributions of the stresses and the vibration velocities inside the sample and the electrical impedance between the electrodes. Based on the analysis of the solutions, the complex dielectric, elastic, and piezoelectric coefficients are determined from the impedance or admittance measurements near the resonance frequencies. The measurement for LiNbO/sub 3/ single crystals is used as an example to demonstrate the experiment and calculation procedures and to indicate the comparisons with previous methods.  相似文献   

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