Depth-profiled characterization of complex refractive index of ion implanted optically transparent polymers using multilayer calculations and reflectance data

The material in the ion-modified surface layer formed in polymethylmethacrylate (PMMA) is optically characterized by calculations based on multilayer model and optical reflectance data. PMMA was subjected to a low energy (50 keV) silicon ion implantation at the fluences of 3.2 × 10¹⁵ cm⁻² and 3.2 × 10¹⁶ cm⁻². Both real and imaginary components of the complex refractive index of this optically transparent polymer are modeled in a geometry that includes a gradient of their in-depth spatial distribution.     

Optical properties of ion-implanted silicon and separation by implantation of oxygen silicon-on-insulator substrates in the infrared: Study of B and P2 implantation doping

The optical properties of ion implanted silicon and silicon-on-insulator substrates have been studied by Fourier transform infrared spectroscopy. The influence of the implanted-ion mass in changing the refractive index of a silicon target has been examined by implanting 80 keV ¹¹B⁺ and ⁶²P₂⁺ ions respectively. A refractive index rise not exceeding 2% and total amorphization were observed respectively in the vicinity of the Si surface after boron and phosphorous implantations. Free carrier profiles generated after thermal annealing at 950 °C/30 min and 1150 °C/120 min were modeled by Pearson and half-Gaussian distributions respectively. The phosphorous implantation was also performed in silicon-on-insulator substrates, yielding after annealing nearly homogeneous free-carrier profiles in the top-Si layer and optical mobility values comparable to those of bulk-Si.     

Formation and characterization of Si5C3 type silicon carbide by carbon ion implantation with a MEVVA ion source

A Si₅C₃ type silicon carbon has been prepared via carbon ion implantation into silicon substrate using a MEVVA ion source. Carbon ions were implanted into silicon substrate at a fluence of 5 × 10¹⁷ ions/cm² and then the as-implanted samples were annealed at 1250 °C for 2 h. The thermal annealing produced a silicon carbide layer on the surface of silicon substrate. The results of X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) confirm the existence of Si₅C₃, rather than SiC. The results of Fourier transform infrared reflection (FTIR) and Raman spectroscopy analyses show that the Si–C vibration frequency in crystalline Si₅C₃ is slightly less than that in crystalline β-SiC.     

Refractive index of polymethylmethacrylate oriented by fluid temperature under electrical field

We prepared micron and submicron polymethylmethacrylate (PMMA) layers by the spin-coating method. We investigated the possibility to orientate polymer dipoles in electric field in the glass transition area (T _g) and the fluid temperature of PMMA with the aim to increase its refractive index (n) after the layer is cooled below T _g. We have studied the effect of electric field (up to 12 kV cm⁻¹) on change of surface morphology of the layer, dependence of n and contact angle (surface wettability) on the field and dependence of layers orientation on orientation of electric field. The surface morphology was examined using atomic force microscopy (AFM), contact angles were measured by goniometer, film thickness was measured by profilometer, refractive index of films was determined using refractometer. The change of refractive index as dependent on the PMMA layer orientation in electric field depends on temperature and electric field. The highest change in n was found for electric field 11 kV cm⁻¹. The change in contact angle (wettability) on surface of an orientated PMMA layer confirms the dipoles orientation in electric field unambiguously. The orientation of layers causes a “slight” change in their morphology and a “slight” increase of surface roughness only for one direction of field effect. Change in colour for oriented layers does not depend on orientation of electric field.     

Photoluminescence enhancement in Si+ implanted PMMA

Silicon ion implantation effects on the optical and photoluminescence (PL) properties of polymethyl–methacrylate (PMMA) have been studied. Low-energy ion implantation (E = 30–50 keV) was carried out over a range of different ion fluences (D = 10¹³–10¹⁷ cm^?2). Visible PL and optical transmission spectra in the range (330–800 nm) have been measured. The existing visible range PL emission in the unimplanted PMMA samples is clearly affected by the Si⁺ ion implantation and the observed modification effect of photoluminescence enhancement (PLE) is essentially dependent on the implantation fluence. For certain fluences, dependent on the ion energy, the overall amplitude of the PL emission has a several times (～5 times) increase. Optical absorption also gradually increases with the fluence.     

Refractive index profiles of planar optical waveguides in β-BBO produced by silicon ion implantation

The planar waveguides have been fabricated in z-cut beta barium metaborate crystals by 2.8 MeV Si⁺ ion implantation with doses of 1 × 10¹⁵ and 3 × 10¹⁵ ions/cm² at room temperature. The waveguides were characterized by the prism-coupling method. The refractive index profiles were reconstructed using reflectivity calculation method. It is found that relatively large positive changes of extraordinary refractive indices happen in the guiding regions, and the negative changes of ordinary refractive indices happen at the end of the track. TRIM’98 (transport of ions in matter) code was used to simulate the damage profile in β-BBO by 2.8 MeV Si⁺ ion implantation.     

Si+ and N+ ion implantation for improving blood compatibility of medical poly(methyl methacrylate)

Si⁺ and N⁺ ion implantation into medical poly(methyl methacrylate) (PMMA) were performed at an energy of 80 keV with fluences ranging from 5×10¹² to 5×10¹⁵ ions/cm² at room temperature to improve blood compatibility. The results of the blood contacting measurementsin vitro showed that the anticoagulability and anticalcific behaviour on the surface morphology were enhanced after ion implantation. No appreciable change in the surface morphology was detected by scanning electron microscopy (SEM). X-ray photoelectron spectroscopy (XPS) analysis indicated that ion implantation broke some original chemical bonds on the surface to form some new Si- and N-containing groups. These results were considered responsible for the enhancement in the blood compatibility of PMMA.     

Planar waveguide in beta barium borate formed by proton implantation and optical properties in visible and near-infrared band

β-BaB₂O₄ is nonlinear crystal that provides attractive features for various nonlinear optical application. We report on z-cut β-BaB₂O₄ planar waveguide produced by multi-energy proton implantation in total of 3 × 10¹⁶ ion/cm² at room temperature. The refractive index profile is a barrier-confined distribution, which is reconstructed according to the dark mode spectroscopy at the wavelength of 633 nm. The near-field light intensity profiles in the visible (633 nm) and near-infrared band are measured by end-face coupling method. The absorption spectra recorded over the wavelength range 185–2500 nm shows there is hardly change after proton implantation. The investigation results of the Raman spectra demonstrate that the positions and widths of all the peaks are very similar in the β-BaB₂O₄ crystal and waveguide layer.     

Optical properties of TiO2 thin films deposited on polycarbonate by ion beam assisted evaporation

TiO₂ thin films were deposited on polycarbonate (PC) substrate by ion beam assisted evaporation. The grain size increased with the ion anode voltage and film thickness. The TiO₂ thin films had an amorphous structure. Moiré deflectometry was used to measure the nonlinear refractive indices of TiO₂ thin films on PC substrates. The nonlinear refractive index was measured to be of the order of 10^− 8 cm² W^− 1 and a change in refractive index was of the order of 10^− 5. Dense TiO₂ films exhibited high linear refractive indices, red-shift of the optical absorbance, and absorbance in the near-IR region.     

Influence of ion energy on damage induced by Au-ion implantation in silicon carbide single crystals

This article reports on the influence of the ion energy on the damage induced by Au-ion implantation in silicon carbide single crystals. 6H-SiC samples were implanted with Au ions at room temperature at two different energies: 4 and 20 MeV. Both Rutherford Backscattering spectrometry in channelling geometry (RBS/C) and Raman spectroscopy were used to probe the ion implantation-induced damage. Results show that the accumulated damage increases with the fluence up to the amorphization state. RBS/C data indicate that 4-MeV implantation induces more damage than 20-MeV implantation at a given fluence. This effect is attributed to nuclear collisions since the amount of damage is identical at 4 or 20 MeV when the fluence is rescaled in dpa. Surprisingly, Raman data detect more damage for 20-MeV implantation than for 4-MeV implantation at low fluence (below 10¹³ cm⁻²) where point defects are likely formed.     

Synthesis,growth and characterization of π conjugated organic nonlinear optical chalcone derivative

A new potentially useful nonlinear optical organic material, 1-(5-chlorothiophen-2-yl)-3-(2,3-dimethoxyphenyl)prop-2-en-1-one, has been synthesized and grown as a high-quality single crystal by the slow evaporation technique. The grown crystals were characterized by FT-IR, NMR, thermal analysis, and UV–visible spectroscopy. The material is thermally stabile up to 111 °C. The mechanical property of the grown crystals was studied using Vickers microhardness tester and the load dependence hardness was observed. The third order nonlinear optical properties of the material such as real and imaginary part of χ⁽³⁾, nonlinear absorption coefficient and nonlinear refractive index were determined using nanosecond laser pulses at 532 nm wavelength by employing Z-scan technique. The nonlinear refractive index is found to be of the order of 10⁻¹¹ cm² W⁻¹. The magnitude of third order susceptibility is of the order of 10⁻¹³ esu. The observed increase in the third order nonlinearity in these molecules clearly indicates the electronic origin. The compounds exhibit good optical limiting at 532 nm. The best optical limiting behavior of this molecule is due to the substituted strong electron donor.     

Effect of ion beam irradiation on metal particle doped polymer composites

Polymethyl methacrylate (PMMA) was prepared by solution polymerization method. Different concentrations (10, 20 and 40%) of Ni powder were dispersed in PMMA and the composite films were prepared by casting method. These films were irradiated with 120 MeV Ni^10 + ions at a fluence of 5 × 10¹² ions/cm². Electrical, structural and chemical properties of the composites were studied by means of an LCR meter, X-ray diffraction, FTIR spectroscopy and SEM/AFM, respectively. The results showed that the conductivity increases with metal concentration and also with ion beam irradiation. This reveals that ion beam irradiation promotes the metal/polymer bonding and converts polymeric structure into hydrogen depleted carbon network. It was observed from XRD analysis that percentage crystallinity and crystalline size decrease upon irradiation. This might be attributed to rupture of some polymeric bonds, which is also corroborated with FTIR spectroscopic analysis. Ion beam tempts graphitization of polymeric material by emission of hydrogen and/or other volatile gases. Surface morphology of the pristine and irradiated films was studied by atomic force microscopy (AFM)/scanning electron microscopy (SEM). Result showed that the surface roughness increases after ion beam irradiation.     

Thickness dependence of refractive index and optical gap of PMMA layers prepared under electrical field

Optical parameters (refractive index, dispersion energy, optical gap) of polymethylmethacrylate (PMMA) layers prepared by spin coating and modified by electric field have been studied. Refractive index was measured using a refractometer, internal structure was investigated as a structural parameter (E _d) within the One Oscillator Model. Optical gap width (E _g^opt) was assessed using Tauc Approximation from UV-Vis spectra. Surface morphology and roughness was investigated using an AFM. The electric field imposed during preparation of layers increases their refractive index. The highest increase in n (Δn = 0.042) was found for the thinnest PMMA layer (70 nm). Oriented layers have produced higher E _g^opt than non-oriented ones for all studied values of thickness. The electrical field applied at preparation of the oriented layer will not change its surface morphology and roughness.     

Refractive index of doped polymers modified by electrical field

Polymethylmethacrylate (PMMA) and polystyrene (PS) were doped from a solution with 3-(1,2-dimethyl imidazole)-borane dipolar compound to 0–10 wt.%. From the pristine and doped polymers, 200-nm thick films were prepared by spin coating onto a silicon substrate. The film deposition proceeded either without external electrical field or under DC electrical field of 2.5 kV cm⁻¹. Refractive index (n) of the films in spectral region from 200–1100 nm was determined by a refractometer. It was demonstrated that, under the external electrical field, both polymer composites behave differently. While for PS based composite the refractive index increases, for doped polar PMMA, application of an external electrical field results in refractive index declination.     

Polymeric waveguides using oxidized porous silicon cladding for optical amplification

We report on a new hybrid approach to realize optical slab waveguides for optical amplification purposes. The structure consists of a dye-doped polymer core (PMMA) deposited over an oxidized porous silicon (PS) cladding layer formed on a silicon wafer. The very low refractive index (n = 1.16) achievable in the cladding allows obtaining monomodal behavior with high confinement factors (Γ_TE = 96%) even for very thin cores (400 nm). Optically excited guided luminescence shows stimulated emission, strong line narrowing and a clear threshold and superlinear behavior with pump energy. By means of the variable stripe length (VSL) technique, values of net optical gain up to 113 dB/cm (constant over 3 mm) and absolute amplification values up to 34 dB have been measured at 694 nm when pumping with 80 mJ/cm² energy pulses. These results validate the use of oxidized PS as a cladding layer in silicon photonics.     

Preparation and characteristics of a vapor-grown carbon fiber/ceramic composite using a methylsilicone precursor

Vapor-grown carbon fiber (VGCF)/silicon oxycarbide ceramic composites have been prepared by pyrolysis of a VGCF/methylsilicone precursor (MSR) composite produced through polymer melt-mixing. The electrical resistivity of the composite before and after pyrolysis was drastically reduced by VGCF (above 5 wt% in MSR), and reached the order of 10⁰ Ω cm. However, the ceramic composite could not always maintain its shape because of shrinkage from the weight loss of MSR during pyrolysis. To overcome this difficulty, polymethyl methacrylate (PMMA) microbeads were added as a sacrificial processing aid during melt-mixing to enable the material to maintain its shape through the microporous structure generated. The microcellular VGCF/ceramics obtained from VGCF/MSR/PMMA were characterized in terms of their shrinkage, mechanical, structural and electrical properties, and their composition was optimized. It was found that microcellular VGCF/ceramics derived from an optimal VGCF/MSR/PMMA composition of 5/45/45 (by weight) gave a low electrical volume resistivity (around 1.0 Ω cm), comparable to that of VGCF/ceramics from 10/90 (by weight) VGCF/MSR.     

Mg ion implantation on SLA-treated titanium surface and its effects on the behavior of mesenchymal stem cell

Magnesium (Mg) is one of the most important ions associated with bone osseointegration. The aim of this study was to evaluate the cellular effects of Mg implantation in titanium (Ti) surfaces treated with sand blast using large grit and acid etching (SLA). Mg ions were implanted into the surface via vacuum arc source ion implantation. The surface morphology, chemical properties, and the amount of Mg ion release were evaluated by scanning electron microscopy (SEM), Auger electron spectroscopy (AES), Rutherford backscattering spectroscopy (RBS), and inductively coupled plasma-optical emission spectrometer (ICP-OES). Human mesenchymal stem cells (hMSCs) were used to evaluate cellular parameters such as proliferation, cytotoxicity, and adhesion morphology by MTS assay, live/dead assay, and SEM. Furthermore, osteoblast differentiation was determined on the basis of alkaline phosphatase (ALP) activity and the degree of calcium accumulation. In the Mg ion-implanted disk, 2.3 × 10¹⁶ ions/cm² was retained. However, after Mg ion implantation, the surface morphology did not change. Implanted Mg ions were rapidly released during the first 7 days in vitro. The MTS assay, live/dead assay, and SEM demonstrated increased cell attachment and growth on the Mg ion-implanted surface. In particular, Mg ion implantation increased the initial cell adhesion, and in an osteoblast differentiation assay, ALP activity and calcium accumulation. These findings suggest that Mg ion implantation using the plasma source ion implantation (PSII) technique may be useful for SLA-treated Ti dental implants to improve their osseointegration capacity.     

Application of swift and heavy ion implantation to the formation of chalcogenide glass optical waveguides

We demonstrate the application of swift and heavy ion implantation to generate optical waveguides in amorphous materials. Gallium lanthanum sulfide (GLS) and gallium lanthanum oxysulfide (GLSO) glass waveguides are fabricated using Ar implantation at 60 MeV and 2 × 10¹² ions/cm². A “well” region with increased refractive index (0.1% for GLS and 0.3% for GLSO) is formed near the surface of the glass based on the electronic energy deposition; a “barrier” layer with decreased refractive index is formed inside the glass due to the nuclear energy deposition. As a result, the waveguides exhibit a refractive index distribution of “well + barrier” type. It is supposed that the change in local structure order of the substrate causes the “well” formation. The propagation loss is 2.0 dB/cm for GLS and 2.2 dB/cm for the GLSO glass waveguide.     

Optical properties of swift ion beam irradiated CdTe thin films

This paper reports the effect of swift (80 MeV) oxygen (O⁺⁶) ion irradiation on the optical properties of CdTe thin films grown by conventional thermal evaporation on glass substrates. The films are found to be slightly Te-rich in composition and irradiation results no change in the elemental composition. The optical constants such as refractive index (n), absorption coefficient (α) and the optical band gap energy show significant variation in their values with increase in ion fluence. Upon irradiation the band gap energy decreased from a value of 1.53 eV to 1.46 eV whereas the refractive index (n) increased from 2.38 to 3.12 at λ = 850 nm. The photoluminescence spectrum shows high density of native defects whose density strongly depends on the ion fluence. Both analyses indicate considerable defect production after swift ion beam irradiation.     

BF2 ion implantation in silicon through surface oxides,behaviour of the fluorine with rapid thermal annealing

BF₂ ion implantation through surface oxides has been investigated to form shallow p⁺/n junctions. BF₂ ion implantation was performed at 25 keV at a dose of 5.4 × 10¹⁴cm⁻² through surface oxides of different thicknesses into crystalline silicon. Rapid thermal annealing (1000°C/10 s) was used for dopant activation and radiation damage removal. Secondary ion mass spectroscopy (SIMS) was used to obtain the boron and fluorine distribution profiles. p⁺/n junctions as shallow as 0.12 μm were formed with reasonable sheet resistance. The study shows that, as expected, dopant loss in the surface oxide during ion implantation results in higher values of sheet resistance. Out-diffusion of fluorine during RTA resulted in a fluorine loss of 50 to 65% from the silicon. Also, fluorine was found to segregate at the oxide/silicon interface.