Improvement of multicrystalline silicon solar cell performance via chemical vapor etching method-based porous silicon nanostructures

In this paper, we report on the effect of chemical vapor etching-based porous silicon (PS) on the performance of multicrystalline silicon solar cells performed via deep n⁺/p junction-type structures. Chemical vapor etching of silicon leads to the formation of porous silicon (PS) nanostructures that dramatically decrease the surface reflectivity from 30% to about 8%, and increase the minority carrier diffusion lengths from 90 μm to 170 μm. As a result, the short-circuit current density was improved by more than 20% and the fill factor (FF) by about a 10%. An enhancement of the photovoltaic conversion energy efficiency of the solar cells from 7% to 10% was observed. This low-cost PS formation process can be applied in the photovoltaic cell technology as a standard procedure.     

Improving thin-film crystalline silicon solar cell efficiency with back surface field layer and blaze diffractive grating

Both 2D electromagnetic and electrical semiconductor simulations are performed sequentially in this study in order to better understand the structural principles of thin-film crystalline solar cells with back surface field and blaze diffractive grating. In the absence of adequate approximations for blazed gratings, we simulate silicon solar cells electromagnetically and electrically in order to deal with the geometrical complexity produced by the blazed grating with a BSF on top of it. Thin-film crystalline silicon solar cells (TF-c-Si SCs) typically exhibit poor quantum efficiency both at shorter wavelengths and longer wavelengths with sharp drops in spectral response. Longer wavelength spectral response (from 0.6 μm to 1.2 μm) is addressed here first by considering the influence of blaze gratings on the enhancement of effective optical absorption in thin-film crystalline silicon (TF-c-Si) solar cells. The effect of the back surface field layer (BSF) in terms of improving minority carrier collection is also taken into account. In the 2D electromagnetic simulation, polarization dependent two-dimensional (2D) numerical simulations based on rigorous coupled wave analysis (RCWA) and finite element method (FEM) are implemented for the optimization of optical absorption of the solar cell structure. A rather large tolerance in design parameters of the optimized blaze grating structure was found. The optimized blaze grating structures help in improving the cell efficiency, especially for weak absorption thin cell structures. The enhancement of equivalent optical path length reveals the efficient light trapping effect caused by the diffractions of the blaze grating structures, especially in the longer wavelength range. In the electrical semiconductor simulation, the BSF, which arises from the heavy acceptor doping that creates the concentration gradient, is set atop the blaze grating in order to provide an extra small drift field for the collection of minority electrons. Incorporating the optimized antireflection coating along with a BSF layer and a blaze-grating in the 2 μm cell doubles cell efficiency. The use of blazed gratings in thin-film solar cells, which can be performed upon silicon by means of lithography and ion-beam etching, is promising for low cost and high-efficient solar cell applications.     

All electrochemical layer deposition for crystalline silicon solar cell manufacturing: Experiments and interpretation

A manufacturing process for crystalline silicon solar cells is presented which consists mainly of electrochemical steps. The deposition of doping glass layers for the front side emitter as well as the back surface field is performed anodically onto the etched and cleaned wafers. The doping atoms, phosphorus or boron, are diffused into the silicon crystal in a furnace at 950 °C in an atmosphere of simply clean air. After the diffusion process the front side doping glass has a blue colour and is suitable to serve as an antireflection coating with a very low surface recombination velocity. For this reason, the doping glass is not etched away on the sun exposed regions of the solar cell. The masking technology for all electrochemical processes provides inherently an edge exclusion and, therefore, no additional processing for preventing shorts on the wafer edge is necessary. For the metallization a reusable rubber mask defines the pattern. First, the mask is used for the doping glass patterning by wet chemical etching. Then, on both sides first nickel is deposited electrolytically directly onto silicon, and in a second step copper electroplating onto the nickel barrier is performed. All three steps, etching, nickel and copper deposition are self adjusting through said rubber mask. A short forming gas anneal finishes the solar cell processing. During all electrochemical processing the wafer is electrically contacted on the opposite surface on a stainless steel plate by the force of vacuum clamping. With this low cost processing 12.5% cell efficiency has been achieved on multi-crystalline 156 mm wafers, which originally have a minority carrier lifetime of 4 μs measured after damage etch and thermal oxidation. In this paper, experiments, surface analysis and physical interpretations are presented.     

Silicon lifetime enhancement by SiNx:H anti-reflective coating deposed by PECVD using SiH4 and N2 reactive gas

Hydrogenated films of silicon nitride SiN_x:H are largely used as antireflective coating as well as passivation layer for industrial crystalline and multicrystalline silicon solar cells. In this work, we present a low cost plasma enhanced chemical vapor deposition (PECVD) of this thin layer by using SiH₄ and N₂ as a reactive gases. A study was carried out on the variation effect of the ratio silane (SiH₄) to nitrogen (N₂) and time deposition on chemical composition, morphologies, reflectivity and carrier lifetime. The thickness was varied, in order to obtain a homogeneous antireflective layer. The Fourier transmission infrared spectroscopy (FTIR) shows the existence of Si–N and Si–H bonds. The morphologies of the sample were studied by Atomic Force Microscopy (AFM). The resulting surface of the SiN_x:H shows low-reflectivity less than 5% in wavelength range 400–1200 nm. As a result, an improvement in minority carrier lifetime has been achieved to about 15 μs.     

Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons

Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) solar cells subjected to proton irradiation is performed with the use of a one-dimensional optical device simulator, PC1D. By fitting the external quantum efficiencies of 3J solar cells degraded by 30 keV, 150 keV, 3 MeV, or 10 MeV protons, the short-circuit currents (I_SC) and open-circuit voltages (V_OC) are simulated. The damage coefficients of minority carrier diffusion length (K_L) and the carrier removal rate of base carrier concentration (R_C) of each sub-cell are also estimated. The values of I_SC and V_OC obtained from the calculations show good agreement with experimental values at an accuracy of 5%. These results confirm that the degradation modeling method developed in this study is effective for the lifetime prediction of 3J solar cells.     

50 μm thin solar cells with 17.0% efficiency

Monocrystalline silicon solar cells with thicknesses below 50 μm manufactured by the transfer layer process at ipe reach efficiencies as high as 17.0%. We present a thin film solar cell, which is not attached to a glass superstrate, opening new process opportunities, as for example the usage of flexible superstrates. We show a free-standing 47 μm thin solar cell with a record conversion efficiency η=17.0%.     

Ebeam fabrication of silicon nanodome photovoltaic devices without metal catalyst contamination

In this paper, the fabrication of silicon nanodome solar cells on crystalline wafers is reported. Crystalline silicon was patterned by ebeam lithography to define the silicon nano pillars with diameter of 100 nm, 1 μm and 5 μm. Unlike conventional bottom up growth of silicon nanowire from gold (Au), our method is free from contaminant. Consequently, it is a valuable method to fully evaluate the effect of nanostructures on solar cell performances. The fabricated devices were characterized through scanning electron microscopy, absorption measurements, illuminated solar cell I–V characteristics and monochromatic incident photon-to-electron conversion efficiency.     

Vanadium-based antireflection coated on multicrystalline silicon acting as a passivating layer

In this paper, we present important experimental results of a new efficient (ARC), leading to an efficient surface passivation that have not been reported before. Vanadium pentoxide V₂O₅ powder was thermally evaporated onto the front surface of mc-Si substrates, followed by a short annealing duration at 600 °C, 700 °C and 800 °C under an O₂ atmosphere. The chemical composition of the deposited vanadium oxide thin films was analyzed by means of Fourier Transform Infrared Spectroscopy (FTIR). Surface and cross-section morphology were determined by a scanning electron microscope (SEM). The effect of the deposited thin film on the electrical properties was evaluated by means of the internal quantum efficiency (IQE), minority carrier lifetime measurements which have been made using a WTC-120 photoconductance lifetime tester and we used dark current–voltage (I–V) characteristic to measure the defect density at a selected grain boundary (GB) in all samples and compared to an untreated wafer. The results show that the deposited thin film single layer gives the possibility of combining, in one processing step, an antireflection coating deposition along with efficient surface state passivation, as compared to a reference wafer.     

Oxygen modified diamond-like carbon as window layer for amorphous silicon solar cells

In the present study, the effect of in situ layer-by-layer oxygen plasma treatment (OPT) on optical, nano-mechanical and electrical properties of layer-by-layer diamond-like carbon (DLC) thin films was explored. In situ layer-by-layer OPT on layer-by-layer DLC films led to drastic variation of optical band gap from 1.25 eV to 2.6 eV and hardness from 16.1 GPa to 25.3 GPa. Wide band gap and the band gap feasibility over wide range may lead to its realization as p-type window layer in p–i–n solar cells and variable band gap layers in tandem solar cells. Simulations of a-Si:H based p–i–n solar cells was also carried out by considering OPT–DLC films as p-type window layers that yielded maximum efficiency of 8.9%. In addition, due to high hardness and other excellent nano-mechanical properties, these OPT–DLC films can be treated as hard, protective and encapsulate layers on solar cells particularly in n–i–p configuration. It is important to mention that OPT–DLC film as p-layer can minimize the use of additional hard, protective and encapsulate layer.     

Thin film silicon solar cells by AIC on foreign substrates

This paper presents the fabrication of thin film crystalline silicon solar cells on foreign substrates like alumina, glass–ceramic (GC) and metallic foils (ferritic steel—FS) using seed layer approach, which employs aluminium induced crystallisation (AIC) of amorphous silicon. Effect of hydrogen content in a-Si:H precursor films on the AIC process has been studied and the results showed that defects in the AIC grown films increased with increase of hydrogen content. At the optimal thermal annealing conditions, the AIC grown poly-Si films showed an average grain size of 7.6, 26, and 8.1 μm for the films synthesised on alumina, GC, and FS, respectively. The grains were (1 0 0) oriented with a sharp Raman peak around 520 cm^?1. Similarly, n-type seed layers were also fabricated by over-doping of as-grown AIC layers using a highly phosphorus doped glass solution. The resistivity of as-grown films reduced from 8.4×10^?2 Ω cm (p-type) to 4.1×10^?4 Ω cm (n-type) after phosphorus diffusion. These seed layers of n-type/p-type were thickened to form an absorber layer by vapour phase epitaxy or solid phase epitaxy. The passivation step was applied before the heterojunction formation, while it was after in the case of homojunction. Open circuit voltage of the junctions showed a strong dependence on the hydrogenation temperature and microwave (μW) power of electron cyclotron resonance (ECR) plasma of hydrogen. Effective passivation was achieved at a μW power of 650 W and hydrogenation temperature of 400 °C. Higher values of solar conversion efficiencies of 5% and 2.9% were achieved for the n-type and p-type heterojunction cells, respectively fabricated on alumina substrates. The analysis of the results and limiting factors are discussed in detail.     

Interface properties determined the performance of thermally grown GaN/Si heterojunction solar cells

We report the fabrication of heterojunction solar cells via the thermal chemical vapor deposition (CVD) of gallium nitride (GaN) nanostructures on clean Si substrates. GaN epitaxial layers were synthesized via the direct reaction of Ga vapor and NH₃ solution at 1050 °C. The structural and optical characteristics of the as-grown GaN layers were investigated. The effects of Si orientation (100 vs 111) and doping type (n- vs p-) on the structural and optical properties of the deposited GaN nanostructures and solar cell performance were explored. The fabricated GaN nanostructures exhibited p-type behavior at the GaN/Si interface as revealed from the Hall-effect measurements. The J–V characteristics showed rectifying behavior for the GaN/n-Si junction and Ohmic behavior for the GaN/p-Si junction. Upon illumination (30 mW/cm²), the as-deposited heterojunction solar cell devices showed conversion efficiencies of 6.18% and 3.69% for GaN/n-Si (1 1 1) and GaN/n-Si (1 0 0) heterojunctions, respectively. The growth of GaN on Si substrates in the presence of NH₃ solution has strong effect on the morphological, optical and electrical properties and consequently on the efficiency of the solar cell devices made of such substrates.     

Correlation of critical heat flux and two-phase friction factor for subcooled convective boiling in structured surface microchannels

Critical heat flux (CHF) and pressure drop of subcooled flow boiling are measured for a microchannel heat sink containing 75 parallel 100 μm × 200 μm structured surface channels. The heated surface is made of a Cu metal sheet with/without 2 μm thickness diamond film. Tests and measurements are conducted with de-ionized water, de-ionized water +1 vol.% MCNT additive solution, and FC-72 fluids over a mass velocity range of 820–1600 kg/m² s, with inlet temperatures of 15(8.6)°C, 25(13.6)°C, 44(24.6)°C, and 64(36.6)°C for DI water (FC-72), and heat fluxes up to 600 W/cm². The CHF of subcooled flow boiling of the test fluids in the microchannels is measured parametrically. The two-phase pressure drop is also measured. Both CHF and the two-phase friction factor correlation for one-side heating with two other side-structured surface microchannels are proposed and developed in terms of the relevant parameters.     

Novel approaches for tri-crystalline silicon surface texturing

Tri-crystalline silicon (Tri-Si) is a promising candidate to reduce the cost of solar cells fabrication because it can be made by a low-cost, fast process with a better mechanical strength, and needs a thinner wafer. One of the key parameters in improving the efficiency of the Tri-Si solar cells is the reflectance, which can be lowered by etching methods. However, Tri-Si is a crystal compound consisting of three mutually tilted monocrystalline silicon grains. In all grains boundaries the surface is (1 1 0)-oriented. A standard surface texture of etched random pyramids using an anisotropic etchant, such as NaOH, is not achievable here. In this paper, for the first time, a novel texturing method has been attempted, which consisted of two steps—HF:HNO₃:DI (2.5:2.5:5) etching was followed by exposure to the vapors to generate fine holes and an etching depth of 2.5 μm had been reached. A best result of 12.3% has been achieved for surface reflectance, which is about 10% lower than that using normal acidic texturing. Nanoporous structures were formed and the size of the porous structure varied from 5 to 10 nm. An antireflection coating of SiN_x SLAR was used to optimize the reflectance. A fill factor of 0.78 has been reached with an efficiency of 16.2% in 12.5 cm×12.5 cm. This high efficiency is mainly due to an increased short-circuit current density of 34 mA/cm².     

Reduction in surface recombination through hydrogen and 1-heptene passivated silicon nanocrystals film on silicon solar cells

We demonstrate reduction in surface recombination by integrating silicon (Si) nanocrystal layer on single crystalline Si solar cell. Si nanocrystals (NCs) are grown by electrochemical etching of (1 0 0) oriented p-type Si wafer. The substructures on the substrate are extracted and passivated it with hydrogen and 1-heptene molecules. Colloidal dispersion of Si NCs was spin casted on solar cell at room temperature. Apart from the I–V curve depicting the efficiency of solar cell, diffuse reflectance, measurement of short circuit current as a function of wavelength and current–voltage characteristics of solar cell were recorded with and without NCs layer. The analysis showed 9.4% increase in Si solar cell efficiency due to the surface passivation effect offered by Si NCs. Measurements of surface recombination time confirms the improved passivation by NCs.     

Development of a 2 W direct methanol fuel cell power source

A series of microfuel cell DMFC prototypes in the 1–2 W range has been developed at Motorola Labs. Design criteria, technical issues and the solution to those issues, system and component performance criteria are all discussed in detail with regards to the demonstrated systems. In particular, the industry-wide problem of long-term voltage degradation is explored with the implementation of a successful engineering solution to this issue which resulted in over 1200 h of system lifetime at the average degradation rate of 41 μV/(h per cell). With sufficient fuel for 1 week of continuous operation, the system energy density in the 2 W DMFC prototype was 490 Wh/kg and 368 Wh/L, respectively, at an overall system efficiency of 20% (includes both fuel conversion and BOP efficiencies).     

Analysis of flow patterns emerging during evaporation in parallel microchannels

The evaporation processes of 2-propanol and water in cyclo olefin polymer (COP) and silicon microchannels of square cross-section are studied with a high-speed camera. The COP channels with a cross-section of 50 μm × 50 μm are rather smooth, whereas the 30 μm × 30 μm silicon channels have comparatively rough surfaces. For the COP channels, two different evaporation modes are identified, both with oscillating liquid–vapor menisci. One of these modes is characterized by an extremely rapid evaporation and a corresponding discontinuous shift of the meniscus. In the silicon channels four different evaporation modes are observed. Oscillatory motion of the liquid fronts also dominates here, and depending on the total mass flow and the wall temperature the oscillations in different channels are synchronized or desynchronized. Besides the flow patterns also the velocity trajectories of the evaporating liquid fronts are analyzed in detail and show a rather good reproducibility over different channels and different cycles. Compared to most other studies reported in this field, bubble nucleation is found to be of secondary importance for the evaporation processes.     

Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency

The p-type a-Si:H/n-type c-Si (P⁺ a-Si:H/N⁺ c-Si) heterojunction was simulated for developing solar cells with high conversion efficiency and low cost. The characteristic of such cells with different work function of transparent conductive oxide (TCO) were calculated. The energy band structure, quantum efficiency and electric field are analyzed in detail to understand the mechanism of the heterojunction cell. Our results show that the a-Si/c-Si heterojunction is hypersensitive to the TCO work function, and the TCO work function should be large enough in order to achieve high conversion efficiency of P⁺ a-Si:H/N⁺ c-Si solar cells. With the optimized parameters set, the P⁺ a-Si:H/N⁺ c-Si solar cell reaches a high efficiency (η) up to 21.849% (FF: 0.866, V_OC: 0.861 V, J_SC: 29.32 mA/cm²).     

Development of micromorph tandem solar cells on flexible low-cost plastic substrates

We report on the development of fully flexible microcrystalline and micromorph tandem solar cells directly on low-cost substrates like poly-ethylen-terephtalate (PET) and poly-ethylen-naphtalate (PEN). The cells are deposited in nip or nip/nip configuration on the plastic substrate coated with a highly reflecting Ag–ZnO back contact. Light trapping is achieved by combining a periodically textured substrate and a diffusing ZnO front contact. Single-junction microcrystalline cells with a stable efficiency of 8.7% are achieved with an i-layer thickness of 1.2 μm. In tandem devices we obtain an efficiency of 10.9% (initial) with an open circuit voltage of 1.35 V and a fill factor (FF) of 71.5%. These cells are slightly top limited with 11.26 and 11.46 mA/cm² in the amorphous (270 nm thick) and the microcrystalline (1.2 μm thick) sub-cells, respectively. We introduce an intermediate reflector (IR) between the bottom and the top cell because it allows increasing the top cell current without compromising the stability by a thicker absorber. The IRs consist of either an ex-situ ZnO or a low refractive index P-doped silicon–oxygen compound deposited in-situ with a plasma process that is fully compatible with solar cell processing. We demonstrate significant current improvement (up to 8% relative) using both kinds of IRs.     

Microcrystalline silicon grown by VHF PECVD and the fabrication of solar cells

Intrinsic microcrystalline silicon has been deposited by very high frequency plasma enhanced chemical vapor deposition technique at frequency of 75 MHz. Different gas mixtures of silane and hydrogen were utilized, and the evolution of microstructure and phase in film were studied, while keeping the substrate temperature at 200 °C and the chamber pressure at 0.5 Torr. Optimised material was inserted in p–i–n solar cells: preliminary efficiency of 5.5% was reached for 1 μm-thick solar cells with the V_oc around 0.6 V.     

Saturated flow boiling heat transfer and associated bubble characteristics of FC-72 on a heated micro-pin-finned silicon chip

An experiment is carried out here to investigate flow boiling heat transfer and associated bubble characteristics of FC-72 on a heated micro-pin-finned silicon chip flush-mounted in the bottom of a horizontal rectangular channel. Besides, three different micro-structures of the chip surface are examined, namely, the smooth, pin-finned 200 and pin-finned 100 surfaces. The pin-finned 200 and 100 surfaces, respectively, contain micro-pin-fins of size 200 μm × 200 μm × 70 μm (width × length × height) and 100 μm × 100 μm × 70 μm. The pitch of the fins is equal to the fin width for both surfaces. The effects of the FC-72 mass flux, imposed heat flux, and surface micro-structures of the silicon chip on the FC-72 saturated flow boiling characteristics are examined in detail. The experimental data show that an increase in the FC-72 mass flux causes a delay in the boiling incipience. However, the flow boiling heat transfer coefficient is not affected by the coolant mass flux. But adding the micro-pin-fin structures to the chip surfaces can effectively enhance the single-phase convection and flow boiling heat transfer. Moreover, the mean bubble departure diameter and active nucleation site density are reduced for a rise in the FC-72 mass flux. A higher coolant mass flux results in a higher mean bubble departure frequency. Furthermore, larger bubble departure diameter, higher bubble departure frequency, and higher active nucleation site density are observed at a higher imposed heat flux. We also note that adding the micro-pin-fins to the chips decrease the bubble departure diameter and increase the bubble departure frequency. However, the departing bubbles are larger for the pin-finned 100 surface than the pin-finned 200 surface but the bubble departure frequency exhibits an opposite trend. Finally, empirical equations to correlate the present data for the FC-72 single-phase liquid convection and saturated flow boiling heat transfer coefficients and for the bubble characteristics are provided.