硼硅酸盐玻璃／Al2O3陶瓷LTCC材料的研制

选择邻苯二甲酸二丁酯（DOP）／聚乙二醇（PEG）作为复合增塑剂,经流延制备硼硅酸盐玻璃／Al2O3陶瓷生带,研究生带的力学性能与LTCC基板的理化性能。结果表明：复合增塑剂的增塑效果优于单组份增塑剂,当增塑剂中W（PEG）为30～70％,固含量为86．5～87．3％时,生带拉伸强度为1．94MPa,断裂伸长率为12．07％;烧成LTCC基板具有较低的介电常数（7．1～7．62）,较小的介质损耗（18．4～28．8×10^-4）,合适的热膨胀系数（5．61～6．35×10^-6／℃）,较高的热导率（3．09～3．82W／m·K）,较高的抗弯强度（117～226MPa）。     

高精度Z箔电阻

VPR221Z是一款新型超高精度z箔电阻,此新型器件可提供±0．05×10-6／℃（当温度介于0～60℃之间）及±0．2×10-6／℃（当温度范围在55～125℃）（参考温度为25℃）的工业级别绝对TCR、在25℃时最多8W的额定功率（符合MILPRF-39009规范,在自由空气中为1．5W）、具有±4×10-6／W（典型值）的优越功率系数（“自身散热产生的△R”）及±0．01％的容差。     

超高精度Bulk Metal箔电阻

H和HZ系列Bulk Metal箔电阻具有0．001％的容差,5～1．84MΩ的阻值范围,在至少6年内（未受潮）的工厂寿命稳定率可达±0．0002％,上升时间小于1ns。H系列的最大TCR为±2×10^-6／℃,Z-FOil HZ系列的最大TCR仅有±0．2×10^-6／℃。     

Au-Ni-Sn三元合金在铅基和无铅基焊点界面的生长抑制

以前研究：BGA、Pb-Sn焊料／Au／Ni组成的焊点，经过几个小时150℃的退火处理后呈现出连续层状的三元合金(Au，Ni)Sn4，它紧邻Ni3Sn4层。Ni3Sn4层发生在焊料与Ni的界面上。在界面形成的双层结构金属间化合，导致焊点性能变差。这是我们不希望的。这个发现促进了后来的研究，并由这些研究得知在界面三元合金生长，强烈依赖焊点的金属组成和再流焊条件。在本次研究中，我们集中注意再流焊条件(温度和液相线以上的时间)和焊料组成，对在不同焊点上，三元化合物(Au，Ni)Sn4生长，形态和位置的影响。我们研究的焊点是由0．1Au-99．9Sn或者26Pb-73．9Sn-0．1Au(原子百分含量，除非特殊注明)的焊料在Ni基板上经过再流焊形成。以及研究94．35Sn-3．8Ag-1．85Cu在金／镍金属面上再流焊形成的焊点。26Pb-73．9Sn-0．1Au焊料合金在Ni基板、在185℃液相线以上30秒，进行再流焊。随后150℃退火处理。在基板界面上产生二层金属间化合物：Ni3Sn4和(Au，Ni)Sn4.但是这些焊料合金在235℃，液相线以上经过30秒的再流焊，只有一个层Ni3Sn4生长在26Pb-73．9Sn-0．1Au与Ni的界面上。而(Au，Ni)Sn4三元物在焊料体中形成，与此相似，(Au，Ni)Sn4沉积物：出现在244℃峰值温度，液相线以上74秒再流焊形成的SnAgCu／Au／Ni焊点体中。这个三元中铜的百分含量小于1％，经过261个小时的150℃温度退火处理后这个三元化合物仍留在焊点中。对于Au0．1Sn99．9／Ni系统，经过260℃，液相线以上46秒的再流焊和150℃，49小时的退火处理只有一层Ni3Sn4在焊料与基板界面生长。     

Sn-Zn-Bi-In-P新型无铅焊料性能研究

新型无铅焊料Sn-4.5Zn-2Bi-In-P、Sn-9Zn-2.5Bi-In-P具有优异的抗氧化、抗腐蚀性能,弥补了Sn-Zn系焊料润湿性能方面的不足,具有极大的实用性。测量了共晶Sn-9Zn、两种新型Sn-Zn系无铅焊料和传统的Sn-37Pb焊料的各项物理性能:密度、熔点、线膨胀系数、电阻率及对铜基体的润湿角。实验结果表明,新型Sn-Zn系无铅焊料的密度约为传统Sn-37Pb焊料的3/4;熔点(依次为194℃,191.9℃)接近Sn-37Pb焊料,熔程仅为8℃;在25~100℃,新型Sn-Zn焊料线膨胀系数依次为20.8×10–6/℃、16.9×10–6/℃,优于Sn-37Pb焊料(21.2×10–6/℃);新型Sn-Zn焊料的电阻率依次为1.73×10–6Ω·m、1.79×10–6Ω·m,优于Sn-37Pb焊料(1.96×10–6Ω·m);新型Sn-Zn焊料对Cu基体的润湿角接近30°,满足实用化的最低要求。     

箔分压器电阻

这些电阻具有100Ω～20kΩ的电阻范围,在55～125℃（参考值为＋25℃）范围内具有±0．2×10^6／℃的低典型TCR,0．1×10^6／℃的TCR跟踪,±0．005％（50×10^6）的容差匹配,以及在＋70℃、额定功率时长达2000小时的±0．005％负载寿命稳定比率。其他电阻技术需要几秒钟甚至几分钟才能实现稳态热稳定性,而300144Z及300145Z具有不足1s的热稳定性时间。     

添加Y2O3的自蔓延高温合成β-Sialon粉的微波烧结

采纳合理的保温结构，利用TE103单模腔微波烧结系统对添加6wt％Y2O3的自蔓延高温合成β-Sialon粉末的微波烧结行为、烧结样品的微观结构和力学性能进行了研究，SEM和TEM、HREM观察表明，烧结样品晶粒细小，微观结构均匀，力学性能测试表明在1600℃保温5min时烧结样品具有抗弯强度为470MPa，断裂韧性为5．0MPa·m－2，洛氏硬度为89．5；在1650℃保温5min时烧结样品具有抗弯强度为630MPa，断裂韧性为5．8MPa·m-2，洛氏硬度为91．6．     

新型1．1mm厚1500W表面贴装瞬间电压抑制器

Vishay日前推出1．1mm厚度的新系列1500W表面贴装TransZorb瞬态电压抑制器（TVS）--SMPC系列。SMPC系列具有6．7V～42．4V的击穿电压和10．0V～58．1V的优异钳位能力。采用eSMP^TM TO-277A封装,比传统SMC封装的占位面积小27％。SMPC系列的峰值前向浪涌电流高达200A,工作温度为-55℃～＋105℃。     

微量RE和Al对Sn-9Zn焊料组织与性能的影响

采用正交试验研究了微量RE和Al对Sn-9Zn无铅焊料电导率、硬度、润湿性及微观组织的影响,并与传统锡铅焊料进行了对比。Sn-9Zn焊料的电性能及力学性能优于传统锡铅焊料,但润湿性较差。添加微量RE和Al可以显著提高Sn-9Zn合金铺展率、细化组织,且不降低焊料电导率和力学性能,最佳w(RE)和w(Al)分别为0.05%和0.10%,铺展率达到61.98%,与Sn-9Zn相比提高了13.40%,硬度为20.90HB,电导率为8.15×106S/m。     

无铅焊接的隐忧（上）

一、无铅与有铅的优劣对比 1．1各种无铅焊料中以SAC305（Sn96.5％、Ag3％、Cu0.5％）为主流，其液化熔点（Liquidus m．P．）约在217℃-221℃）之间，比现行Sn63／Pb37之共熔合金（Eutectic Composition）至少高出34℃：以Reflow为例其平均操作时间约延长20秒，致使热量（Thrtmal Mass）大增，对元件与电路板影响极大。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first