The effects of enhanced light trapping in tandem micromorph silicon solar cells

Optical modelling is used to investigate the potential improvements in quantum efficiency and short-circuit current density of the top and bottom silicon cell in tandem micromorph configuration. The effects of enhanced haze parameter and different angular distribution functions of scattered light are presented and analysed. The role of an intermediate reflector (interlayer), located between the top and bottom cell, is studied from the optical point of view. The improvements in quantum efficiency of top cell are demonstrated for different types of interlayers. Potential thickness reductions due to enhanced light trapping in the solar cells are presented.     

A theoretical simulation of light scattering of nanocrystalline films in photoelectrochemical solar cells

A Monte Carlo simulation method of light scattering in nanocrystalline films based on solutions of Maxwell's equations is proposed. A nanocrystalline film is assumed to be superposition of randomly distributed nanoparticles and deviation of the nanocrystalline film from the randomness. Since a scattering field of the randomly and densely distributed nanoparticles can be neglected, a scattering field of the nanocrystalline film results in a sum of scattering fields of the deviant parts in the nanocrystalline film. In the method, configurations of the deviant parts are simulated with a random function of a computer language. A simulation converges in small number of the configuration patterns. The simulation theoretically demonstrates that almost all of the incident light to the nanocrystalline films in the photoelectrochemical solar cells penetrate without scattering.     

Phase engineering of a-Si:H solar cells for optimized performance

Until recently, the advances in hydrogenated amorphous silicon (a-Si:H) solar cell performance and stability have been achieved materials prepared with hydrogen dilution following primarily empirical approaches. This paper discusses the recently obtained insights into the growth, microstructure and nature of these materials. Such protocrystalline Si:H materials are more ordered than the a-Si:H obtained without dilution and evolve with thickness from an amorphous phase into first a mixed amorphous–microcrystalline and subsequently into a single microcrystalline phase. The development of deposition phase diagrams, characterize their microstructural evolution during growth which can be used to guide the fabrication of solar cell structures in a controlled way. Examples are presented and discussed of their application in solar cell fabrication to obtain a fundamental understanding of the properties of the phase transitions as well as the systematic optimization of cell performance.     

Optoelectronic properties of doped layers for a-Si solar cells prepared using helium dilution

This paper is the first part of a work about the preparation and characterisation of doped layers for hydrogenated-amorphous-silicon (a-Si:H) thin film solar cells. An approach for RF-glow discharge deposition of a-Si consisting of dilution of silane (SiH₄) in helium and application of high RF-power densities, has been tested. In this first part the optimisation of n-type layers has been accomplished. The influence of preparation conditions on the optical and electrical properties of the films has systematically been studied. It has been found that the use of high RF-power densities and high dilution levels of SiH4 in He favour the doping efficiency and film quality when the substrate temperature is 300°C. As a result of these investigations, n-type layers with thicknesses between 250 and 360Å, an optical gap about 1.95 eV, a dark-conductivity of 0.1 (Ωcm)⁻¹ and an extended-state conductivity activation energy of 0.1 eV have been prepared. Such properties make them suitable for their use as n-type layers for a-Si:H thin-film solar cells.     

Optical confinement in high-efficiency a-Si solar cells with textured surfaces

The experimental spectral response and reflectance of high-efficiency a-Si solar cells are systematically investigated by using an optical simulation based on realistic optical properties of the transparent conducting oxide (TCO), a-Si, and metal electrode, in order to improve the spectral response. It is shown that a practically important optical loss results from absorption by the TCO, which is enhanced by the optical confinement effect. This suggests that improvement in the spectral response is possible by suppressing the optical confinement in the TCO.     

Experimental studies and limitations of the light trapping and optical losses in microcrystalline silicon solar cells

This study addresses the potential of different approaches to improve the generated current in silicon thin-film solar cells and modules. Decreasing the carrier concentration in the front contact has proven to increase the quantum efficiency and the cell-current density significantly. Additionally, an optically improved ZnO/Ag back reflector and the optimized light incoupling by anti-reflection layers were studied. In this contribution, we show the potential of the different optical components and discuss combinations thereof in order to obtain a maximized cell-current density in silicon thin-film solar cells. Limitations of the cell-current density are discussed with respect to theoretical calculations.     

Amorphous silicon solar cells

The perfectioning of the deposition techniques of amorphous silicon over large areas, in particular film homogeneity and the reproducibility of the electro-optical characteristics, has allowed a more accurate study of the most intriguing bane of this material: the degradation under sun-light illumination. Optical band-gap and film thickness engineering have enabled device efficiency to stabilize with only a 10–15% loss in the as-deposited device efficiency. More sophisticated computer simulations of the device have also strongly contributed to achieve the highest stable efficiencies in the case of multijunction devices. Novel use of nanocrystalline thin films offers new possibilities of high efficiency and stability. Short term goals of great economical impact can be achieved by the amorphous silicon/crystalline silicon heterojunction. A review is made of the most innovative achievements in amorphous silicon solar cell design and material engineering.     

Engineering of a-Si:H device stability by suitable design of interfaces

Where a-Si:H pin devices are concerned, one of the main obstacles regarding improved performance is device stability, usually attributed to adverse behaviour at various interfaces within the device. Several attempts have been made to overcome this problem, such as the use of blocking layers at the interfaces. Although these have led to some improvements in device performance, most of the problems associated with device stability remain. This is mainly due to the defects at the interfaces, since the blocking layers (silicon alloys with carbon, nitrogen or oxygen) usually have a high density of bulk states, in comparison to intrinsic a-Si:H films.In this paper, we present a method that seems to be capable of improving device stability. It consists of performing a controlled removal of oxide interlayers at the interfaces, by an appropriate etching process. This enables the production of highly smoothed interfaces, and reduces possible cross-contamination of the i-layer from the adjacent doped layers. This amounts to a new design of typical pin devices, in which thin absorber layers are placed at the p/i and i/n interfaces. Their purpose is to trap most of the impurity atoms diffused from the doped layers, after which they are removed by appropriate etching.The fabrication of the absorbers (sacrificial layers), the nature of the etching and the tailoring of the defect profile at the interfaces will be discussed, including the performance exhibited by the resulting devices.     

Advanced fabrication technologies of integrated-type structure for a-Si solar cells

This paper proposes a new advanced fabrication technology for a low-cost integrated-type a-Si solar cell. Integrated-type cells provide many advantages and have been industrialized with a laser patterning method. However, a higher throughput and more efficient patterning method was required for applying a-Si solar cells to a power generating system. Plasma CVM (Chemical Vaporization Machining) was first applied to advanced patterning because of its advantages of high speed and selectivity. In this method, a plasma generated under high pressure localizes near the wire electrode and concentrates reactive radicals. As a result, we achieved an etching rate of more than 1 μm/s and selective patterning of a 200 μm-wide a-Si layer in 1 s multiline patterning was also developed for large-area modules.     

Optical modelling of a single-junction p-i-n type and tandem structure amorphous silicon solar cells with perfect current matching

Using the admittance analysis method, the optimal design of a single junction a-Si : H solar cell is suggested and its photovoltaic parameters are calculated. The technique is then extended to design a tandem structure of two cells stacked one on the top of the other and connected in series. The top cell is considered of a-Si : H and bottom of a-SiGe : H and the condition of current matching is applied to determine the tandem's optimal design. The efficiency of the single-junction cell with the optimal design is predicted to be 13.1% and that of the tandem cell with the perfect current matching is 20.8%. The results of our calculations are discussed in the light of the recent experimental results.     

Realization of high efficiency micromorph tandem silicon solar cells on glass and plastic substrates: Issues and potential

High conversion efficiency for (amorphous/microcrystalline) "micromorph" tandem solar cells requires both a dedicated light management, to keep the absorber layers as thin as possible, and optimized growth conditions of the microcrystalline silicon (μc-Si:H) material. Efficient light trapping is achieved here by use of textured front and back contacts as well as by implementing an intermediate reflecting layer (IRL) between the individual cells of the tandem. This paper discusses the latest developments of IRLs at IMT Neuchâtel: SiO_x based for micromorphs on glass and ZnO based IRLs for micromorphs on flexible substrates were successfully incorporated in micromorph tandem cells leading to high, matched, current above 13.8 mA/cm² for p-i-n tandems. In n-i-p configuration, asymmetric intermediate reflectors were employed to achieve currents of up to 12.5 mA/cm². On glass substrates, initial and stabilized efficiencies exceeding 13% and 11%, respectively, were thus obtained on 1 cm² cells, while on plastic foils with imprinted gratings, 11.2% initial and 9.8% stable efficiency could be reached. Recent progress on the development of effective front and back contacts will be described as well.     

Preparation of (n) a-Si: H/(p) c-Si heterojunction solar cells

Heterojunction solar cells have been manufactured by depositing n-type a-Si: H on p-type 1–2Ω cm CZ single crystalline silicon substrates. Although our cell structure is very simple - neither a BSF nor a surface texturing is used - a conversion efficiency of 13.1% has been achieved on an area of 1 cm². In this paper the technology is described and the dependence of the solar cell parameters on the properties of the n-type a-Si: H layer is discussed. It is shown that this cell type exhibits no degradation under light exposure.     

A new perspective on the characterization of materials for a-Si:H solar cells

A study has been carried out on a-Si:H solar cell materials fabricated under a wide range of deposition conditions in different laboratories. The results on both thin films and corresponding Schottky barrier cell structures demonstrate that analysis and characterization based solely on the neutral dangling bonds are clearly inadequate. Contributions of charged defects to the properties of a-Si:H, their effect on light-induced changes are identified together with the limitations of methods commonly used to characterize the solar cell properties and stability of a-Si:H materials. Self-consistent fitting of a wide range of results on films and Schottky barrier cell structures is obtained with a gap state distribution in which charged defects are included.     

Optical properties of nano-structured dye-sensitized solar cells

Radiative transfer computations are carried out to describe the intrinsic and effective optical properties of light diffusing and absorbing materials consisting of anatase titania pigments hosted in an electrolyte medium. The intrinsic visible absorption of some of the pigments has been increased by coating them with an absorbing dye monolayer. A multiple scattering approach is applied to compute average path-length parameters and forward-scattering ratios used in four-flux radiative transfer calculations. It is shown that the effective absorption coefficient of the inhomogeneous medium is maximized when the size of the pigments is around 12 nm in diameter, and the effective scattering coefficient is optimized for diameters of the pigments around 250 nm. The intrinsic solar absorptance of the medium is optimized when the diameter of the pigments is around 60 nm.     

Angle-dependent light scattering in materials with controlled diffuse solar optical properties

Light scattering plays a prominent role in a wide range of energy-efficient materials and solar applications. Some examples are materials for daylighting, diffusely reflecting sunscreens, foils for radiative cooling and nanocrystalline solar cells. Measurements of the angular profile of light scattering are very useful for obtaining a detailed characterization of the light scattering mechanisms. We review recent theoretical results on the forward and backward light scattering profiles. Forward scattering is of major importance for novel pigmented polymeric daylighting materials. Measurements of scattering profiles are in good agreement with Mie theory. Backscattering profiles from highly diffusely reflecting paints containing titanium oxide-based pigments have also been measured. It seems that scattering from the paint surface dominates at low pigment volume fractions. Results for paints with high pigment volume fractions are interpreted in terms of coherent backscattering effects from the pigment particles.     

TCO and light trapping in silicon thin film solar cells

For thin film silicon solar cells and modules incorporating amorphous (a-Si:H) or microcrystalline (μc-Si:H) silicon as absorber materials, light trapping, i.e. increasing the path length of incoming light, plays a decisive role for device performance. This paper discusses ways to realize efficient light trapping schemes by using textured transparent conductive oxides (TCOs) as light scattering, highly conductive and transparent front contact in silicon p–i–n (superstrate) solar cells. Focus is on the concept of applying aluminum-doped zinc oxide (ZnO:Al) films, which are prepared by magnetron sputtering and subsequently textured by a wet-chemical etching step. The influence of electrical, optical and light scattering properties of the ZnO:Al front contact and the role of the back reflector are studied in experimentally prepared a-Si:H and μc-Si:H solar cells. Furthermore, a model is presented which allows to analyze optical losses in the individual layers of a solar cell structure. The model is applied to develop a roadmap for achieving a stable cell efficiency up to 15% in an amorphous/microcrystalline tandem cell. To realize this, necessary prerequisites are the incorporation of an efficient intermediate reflector between a-Si:H top and μc-Si:H bottom cell, the use of a front TCO with very low absorbance and ideal light scattering properties and a low-loss highly reflective back contact. Finally, the mid-frequency reactive sputtering technique is presented as a promising and potentially cost-effective way to up-scale the ZnO front contact preparation to industrial size substrate areas.     

The application of grating couplers in thin-film silicon solar cells

As an alternative to randomly textured transparent conductive oxides as front contact for thin-film silicon solar cells, the application of periodic light grating couplers was studied. The periods and groove depths of transparent gratings made of zinc oxide were tuned independently from each other and varied between 1 and 4 μm and 100 and 600 nm, respectively. The one-dimensional grating couplers were realized using photolithography. We have analysed the optical properties of the gratings and the properties of amorphous and microcrystalline silicon solar cells incorporating these grating couplers. The achieved results are discussed with respect to the performance of cells deposited on flat and randomly textured substrates.     

The role of the buffer layer in the light of a new equivalent circuit for amorphous silicon solar cells

Although the beneficial effect of the buffer layer between the p- and i-layer of amorphous silicon solar cells has been known for many years, the role of this layer is controversial. This paper examines the effect of the buffer layer using a new equivalent circuit for these devices (Merten et al. IEEE Trans. Electron Dev. 45 (1988) 423–429 [1]). The parameters of this model can be easily assessed by variable illumination measurements (VIM) of the devices' I(V)-curve. With the model, collection of carriers in the bulk of the cell is easy and clearly separated from the diode behaviour of the device. The VIM-method allows for a complete analysis of the thin film cells, covering both technological and physical topics. It is shown that the dominant effect increasing the efficiency of the cells with buffer layer is the reduction of the hole injection from the p-layer which leads to a reduced diode term. The buffer layer only slightly reduces the recombination in the i-layer. This reduction mainly occurs in a region close to the p/i-interface and cannot be observed with red light (homogeneous carrier generation).     

Maximum light trapping for the random back-reflective silicon film solar cell with omnidirectional light transmission characteristics

The light trapping characteristics in the wavelength range of 0.5−1.2 μm for the random back-reflective silicon film with omnidirectional top anti-reflection are numerically analyzed based on the simplified probability method. The spectrum averaged maximum external quantum efficiency (EQE) for the 5 μm thick silicon film is evaluated with an increase of 10.6% compared with the best bulk planar silicon solar cell—suggesting that an efficiency higher than those of the best bulk planar cell can be obtained for thin film silicon solar cells several microns thick. The light absorption curves drop slowly with increased back absorption, exhibiting that the performance of the thin film silicon solar cell with light trapping is tolerant of back absorption.     

Light soaking effect in a-Si:H based n–i–p and p–i–n solar cells

Hydrogenated amorphous silicon solar cells have been realised in both a p–i–n configuration on a Corning glass substrate as well as in a n–i–p configuration on stainless-steel substrate. The performance degradation of the two kinds of cell under solar illumination has been examined for a 140 h period. During degradation, the two devices were kept under load in the maximum power condition that is normally used in a solar plant. The performance of the Corning glass deposited device exhibited a higher rate of degradation with respect to the other cell. A discussion on the possible reasons for this behaviour is given.