注入锁定半导体激光器的电路模型及其调制特性分析

本文给出了注入锁定半导体激光器ＬＤ小信号电路模型，使得对注锁ＬＤ的调制特性可以用通用电路分析软件进行分析，运用此模型对注入锁定ＬＤ的调制特性进行了分析。模型的稳态分析结果与已报导的理论和实验一致。     

基于光纤CATV直接调制的若干问题分析

建立了ＤＦＢ－ＬＤ的宏观电路模型，并对ＤＦＢ－ＬＤ在模拟信号直接调制下的光输出，进行了频谱分析。     

基于光纤CATV直接调制的若干问题分析

建立了ＤＦＢ－ＬＤ的宏观电路模型，并对ＤＦＢ－ＬＤ在直接调制下的光输出，进行了频谱分析。     

半导体激光器FM噪声的电路模型及其应用

本文给出了半导体激光器ＦＭ噪声特性的等效电路模型，使得对ＬＤ的调制和噪声特性可用通用电路分析软件进行了分析，模型的模拟结果与已报导的理论和实验一致，用此模型对本征ＬＤ的一些ＦＭ特性进行了分析。     

半导体激光器大信号等效电路模型的参数提取

本文提出了一种由半导体激光器（ＬＤ）的外特性，如端口电特性和小信号频率响应，确定其大信号等效电路模型参数的新方法。并对一个ＩｎＧａＡｓＰ脊形波导ＬＤ和一个隐埋异质结ＬＤ进行了参数提取。这种方法，不需要了解ＬＤ的内部特性，分析的结果与已报道的理论、实验值一致。     

适于器件及电路分析的全耗尽短沟道LDD／LDSSOI MOSFET器件模型

本文系统描述了全耗尽短沟道ＬＤＤ／ＬＤＳＳＯＩＭＯＳＦＥＴ器件模型的电压电压特性。该模型扩展了我们原有的薄膜全耗尽ＳＯＩＭＯＳＦＥＴ模型，文中着重分析了器件进入饱和区后出现的沟道长度调制效应，及由于ＬＤＤ／ＬＤＳ区的存在对本征ＭＯＳ器件电流特性的影响。     

外腔半导体激光器的宏模型

本文给出了外腔半导体激光器大信号宏模型。该模型可以作为光电集成ＥＣＬＤ的计算机辅助设计模型,亦可作为考察光反馈对单模ＬＤ影响的分析模型,模型可以用通用电路分析软件进行分析,分析结果与已报导的理论和实验基本一致。     

LDD方法在提高电路工作电压中的应用研究

研究了利用轻掺杂漏结构来制作高电源电压器件的工艺方法。分析了ＬＤＤ结构参数对器件击穿特性的影响，并结合实验结果对Ｎ＾－区的注入剂量，长度及引入的串联电阻进行了优化设计。     

提高国产激光器组件直接调制速率与PIN－FET组件频响带宽的新技术

本文对如何提高国产１．５５μｍＩｎＧｒａＡｓｐＤＦＢ－ＬＤ组件直接高速调制速率以及国产ＰＩＮ－ＦＥＴ组件的频响带宽进行了理论与实验研究。在实验测量的基础上建立了国产ＬＤ组件小信号等效电路模型，对其调制响应速率的主要限制因素进行了分析，研制了高速ＤＦＢ－ＬＤ组件，将其调制速率提高到３．２ＧＨｚ。同时，在对谐振式ＰＩＮ－ＦＥＴ光接收机进行噪声分析的基础上，采用微波混合集成工艺研制了一个串联谐振式ＰＩＮ－ＦＥＴ光接收组件，有效地提高了ＰＩＮ－ＦＥＴ的频响带宽。     

一种新的分布式最优双环网络

本文提出了一种新的分布式最优局部双环（ＤＯＬＤＬ）网络，文中先建立了ＤＯＬＤＬ的抽象模型，描述和论证了有关定义和定理，接着提出了ＤＯＬＤＬ的优化拓扑算法，并对其主要拓扑参数进行了模拟计算和数值分析。     

外腔反馈半导体激光器的损耗和阈值特性研究

通过对半导体激光器(LD)的损耗和阈值电流特性的分析，引入等效反射系数的概念，根据多光束干涉的原理，导出了在外腔反馈作用下LD的阈值电流公式。从等效反射系数的推导可以看出，外腔的反馈相当于增大了LD一个端面的反射率，减小了损耗，从而使LD激光振荡的阈值降低。该公式在外腔长度和激光波长可以比拟的情况下能够准确地分析反馈注入对阈值电流的影响，但是在外腔长度远大于激光波长情况下不再适用。针对实验中外腔长度较大的情况，使用光功率的分析简化了理论模型，得出了与实验结果相吻合的结论，即外腔反馈注入使LD出光阈值电流明显降低。     

Nonlinear dynamics of optically injected self-pulsating laserdiodes

The behavior of a 1.55-μm InGaAsP distributed feedback (DFB) self-pulsating (SP) laser diode (LD) when injected with either unmodulated or modulated light from an external LD is investigated numerically. When subjected to weak injection of unmodulated light, the SP-LD exhibits mostly chaotic behavior with some regions of self-sustained-pulsations and multiple-peak periodic oscillations. As the strength of optical injection increases, the SP-LD transits from chaos to multiple-peak periodic oscillations followed by high-frequency self-oscillations before reaching an equilibrium state (i.e., a steady level). When injected with modulated light, the output of the SP-LD is dominated by either quasi-periodicity or chaos depending on the modulation current of the injected optical signal     

光外注入改善RoF系统多通道传输性能

文章基于半导体激光器速率方程,采用小信号分析模型获得了光外注入激光光源的调制特性表达式;根据调制特性表达式编写了仿真软件Optiwave System的Matlab元件,然后将其作为外注入光源应用到直接调制的多通道传输仿真模型中,用于评估光外注入方法对RoF(光载无线电)通信系统的多通道传输性能的影响。仿真结果表明,光外注入方法有利于减小互调失真的干扰,相对于无外注入的情况,系统传输性能有所改善,且对突破激光器驰豫振荡频率以上的多通道微波信号有更明显的作用。     

干涉仪光源光热调频参数对光强波动的影响

本文研究了用于光学精密测量的光热光频调制半导体激光干涉仪中,光强调制度与调制频率和激光器注入电流的关系。实验数据表明,光强调制度随激光器偏置电流的增加而加深,随调制频率的升高而减小,其变化规律与理论结果一致。     

Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes

Two kinds of continuous-wave GaN-based ultraviolet laser diodes (LDs) operated at room temperature and with different emission wavelengths are demonstrated.The LDs epitaxial layers are grown on GaN substrate by metalorganic chemical vapor deposition,with a 10×600 μm2 ridge waveguide structure.The electrical and optical characteristics of the ultraviolet LDs are investigated under direct-current injection at room temperature. The stimulated emission peak wavelength of first LD is 392.9 nm,the threshold current density and voltage is 1.5 kA/cm² and 5.0 V,respectively.The output light power is 80 mW under the 4.0 kA/cm² injection current density. The stimulated emission peak wavelength of second LD is 381.9 nm,the threshold current density the voltage is 2.8 kA/cm² and 5.5 V,respectively.The output light power is 14 mW under a 4.0 kA/cm² injection current density.     

Jitter dynamics of a gain switched semiconductor laser underself-feedback and external optical injection

We investigate the jitter dynamics of a gain switched laser diode (LD) under the influence of strong optical injection due either to multiple reflections from an external cavity mirror, or from another LD. A numerical technique that considers both the spontaneous emission noise and multiple reflections from external optical components is implemented. At all times, the LD exhibits multi-longitudinal mode operation with a Gaussian-shaped spectral line profile that is centered around a fixed dominant output wavelength. We separately consider three (strong) optical injection conditions: 1) coherent self-feedback; 2) incoherent self-feedback; and 3) coherent, external continuous-wave (CW) optical injection. Incoherent self-feedback results in a reduction, by an order of magnitude, in both the intensity and timing jitter (0.5 ps), while maintaining the average peak power and pulsewidth. Eye pattern results show an opening of at least 90 %, which represents an improvement by a factor of two over the same LD that operates without optical injection. The external CW injection condition approaches that of incoherent self-feedback only at high external injection. Coherent self-feedback does not produce any significant change in the LD performance     

Frequency stabilization of tunable DBR laser using multiwavelengthlight injection locking technique

This paper proposes a frequency stabilization scheme for tunable three-section DBR laser diodes (3S-DBR LD) that use multiwavelength light injection locking. The oscillating wavelength of the SS-DBR LD is discretely switched between cavity modes when the injection current into DBR section is changed, and locked to one wavelength of the multiwavelength light injected from the DBR section facet under the injection locking condition. The light injection properties of the capture range and the relationships of relaxation oscillation versus input power and detuning are investigated experimentally. Injection locking on the multistate wavelength of a tunable DBR LD is performed using a two wavelength multiplexed light. As a result, we demonstrate 1 GHz capture range and more than 26 dB rejection ratio for the multiplexed injected light