In0.52Al0.48As/In0.53Ga0.47As double-heterojunction p-n-p bipolar transistors grown bymolecular beam epitaxy

P-n-p In_0.52Al_0.48As/In_0.53Ga_0.47 As double-heterojunction bipolar transistors with a p⁺-InAs emitter cap layer grown by molecular-beam epitaxy have been realized and tested. A five-period 15-Å-thick In_0.53Ga_0.47As/InAs superlattice was incorporated between the In_0.53Ga_0.47As and InAs cap layer to smooth out the valence-band discontinuity. Specific contact resistance of 1×10^-5 and 2×10^-6 Ω-cm² were measured for nonalloyed emitter and base contacts, respectively. A maximum common emitter current gain of 70 has been measured for a 1500-Å-thick base transistor at a collector current density of 1.2×10³ A/cm². Typical current gains of devices with 50×50-μm² emitter areas were around 50 with ideality factors of 1.4     

Bi1.5Zn1.0 Nb1.5O7栅绝缘层的SiO2修饰对ZnO-TFTs性能的影响

具有高介电常数的栅绝缘层材料存在某种极化及耦合作用,使得ZnO-TFTs具有高的界面费米能级钉扎效应、大的电容耦合效应和低的载流子迁移率.为了解决这些问题,本文提出了一种使用SiO₂修饰的Bi_1.5Zn_1.0Nb_1.5O₇作为栅绝缘层的ZnO-TFTs结构,分析了SiO₂修饰对栅绝缘层和ZnO-TFTs性能的影响.结果表明,使用SiO₂修饰后,栅绝缘层和ZnO-TFTs的性能得到显著提高,使得ZnO-TFTs在下一代显示领域中具有非常广泛的应用前景.栅绝缘层的漏电流密度从4.5×10^-5A/cm²降低到7.7×10^-7A/cm²,粗糙度从4.52nm降低到3.74nm,ZnO-TFTs的亚阈值摆幅从10V/dec降低到2.81V/dec,界面态密度从8×10¹³cm^-2降低到9×10¹²cm^-2,迁移率从0.001cm²/（V·s）升高到0.159cm²/（V·s）.     

Emission cross sections and spectroscopy of Ho3+ laserchannels in KGd(WO4)2 single crystal

The spectroscopic properties of Ho³⁺ laser channels in KGd(WO₄)₂ crystals have been investigated using optical absorption, photoluminescence, and lifetime measurements. The radiative lifetimes of Ho³⁺ have been calculated through a Judd-Ofelt (JO) formalism using 300-K optical absorption results. The JO parameters obtained were Ω₂=15.35×10^-20 cm², Ω ₄=3.79×10^-20 cm², Ω₆ =1.69×10^-20 cm². The 7-300-K lifetimes obtained in diluted (8·10¹⁸ cm^-3) KGW:0.1% Ho samples are: τ(⁵F₃)≈0.9 μs, τ( ⁵S₂)=19-3.6 μs, and τ(⁵F₅ )≈1.1 μs. For Ho concentrations below 1.5×10²⁰ cm^-3, multiphonon emission is the main source of non radiative losses, and the temperature independent multiphonon probability in KGW is found to follow the energy gap law τ_ph ^-1(0)=βexp(-αΔE), where β=1.4×10^-7 s^-1, and α=1.4×10³ cm. Above this holmium concentration, energy transfer between Ho impurities also contributes to the losses. The spectral distributions of the Ho³⁺ emission cross section σ_EM for several laser channels are calculated in σ- and π-polarized configurations. The peak a σ_EM values achieved for transitions to the ⁵I₈ level are ≈2×10^-20 cm² in the σ-polarized configuration, and three main lasing peaks at 2.02, 2.05, and 2.07 μm are envisaged inside the ⁵I₇→⁵I₈ channel     

Experimental determination of electron drift velocity in 4H-SiC p+-n-n+ avalanche diodes

4H-SiC p⁺-n-n⁺ diodes of low series resistivity (<1×10^-4 Ω·cm²) were fabricated and packaged. The diodes exhibited homogeneous avalanche breakdown at voltages U_b=250-270 V according to the doping level of the n layer. The temperature coefficient of the breakdown voltage was measured to be 2.6×10^-4 k^-1 in the temperature range 300 to 573 K. These diodes were capable of dissipating a pulsed power density of 3.7 MW/cm² under avalanche current conditions. The transient thermal resistance of the diode was measured to be 0.6 K/W for a 100-ns pulse width, An experimental determination of the electron saturated drift velocity along the c-axis in 4H-SIC was performed for the first time, It was estimated to be 0.8×10⁷ cm/s at room temperature and 0.75×10⁷ cm/s at approximately 360 K     

Photorefractive effects in proton exchanged LiTaO3optical waveguides

A circuit model is proposed to describe photorefractive effects in LiNbO₃/LiTaO₃ channel waveguides at any intensity level. Capacitive charge storage at the waveguide boundaries is assumed to be provided by trapping states associated with photoconductivity. A consequence of this model is that photoconductive transients are independent of optical intensity at low intensity levels. Photovoltaic and photoconductive effects in proton exchange LiTaO₃ channel waveguides were experimentally investigated. Dark conductivities of 2×10^-15 to 2 ×10^-14(Ω-cm)^-1 were extrapolated from photoconductivities up to 2×10^-13 (Ω-cm)^-1 for power levels of 0.1 to 3 mW. Large DC voltage dependent effects on the conductivity were observed. Straight channel waveguides were observed to be free of photovoltaic effects for output power levels below 35-75 mW     

Formation of 0.05-μm p+-n and n+-pjunctions by very low (<500 eV) ion implantation

The current-voltage (I-V) characteristics of ultrashallow p⁺ -n and n⁺-p diodes, obtained using very-low-energy (<500-eV) implantation of B and As, are presented. the p⁺-n junctions were formed by implanting B⁺ ions into n-type Si (100) at 200 eV and at a dose of 6×10¹⁴ cm^-2, and n⁺-p junctions were obtained by implanting As⁺ ions into p-type (100) Si at 500 eV and at a dose 4×10¹² cm^-2. A rapid thermal annealing (RTA) of 800°C/10 s was performed before I-V measurements. Using secondary ion mass spectrometry (SIMS) on samples in-situ capped with a 20-nm ²⁸Si isotopic layer grown by a low-energy (40 eV) ion-beam deposition (IBD) technique, the depth profiles of these junctions were estimated to be 40 and 20 nm for p⁺-n and n⁺-p junctions, respectively. These are the shallowest junctions reported in the literature. The results show that these diodes exhibit excellent I-V characteristics, with ideality factor of 1.1 and a reverse bias leakage current at -6 V of 8×10^-12 and 2×10^-11 A for p⁺-n and n⁺-p diodes, respectively, using a junction area of 1.96×10^-3 cm²     

High-κ Al2O3−HfTiO Nanolaminates With Less Than 0.8-nm Equivalent Oxide Thickness

High quality nanolaminate stacks consisting of five Al₂O₃-HfTiO layers with an effective dielectric constant of about 22.5 are reported. A dielectric constant for binary HfTiO thick films of about 83 was also demonstrated. The electrical characteristics of as-deposited structures and ones which were annealed in an O₂ atmosphere at up to 950 degC for 5-10 min were investigated. Two types of gate electrodes: Pt and Ti were compared. The dielectric stack which was annealed up to 500 degC exhibits a leakage current density as small as ~1times10^-4 A/cm² at an electric of field 1.5 MV/cm for a quantum-mechanical corrected equivalent oxide thickness of ~0.76 nm. These values change to ~1times10^-8 A/cm² and 1.82 nm, respectively, after annealing at 950 degC     

Low-resistance bandgap-engineeredW/Si1-xGex/Si contacts

Bandgap-engineered W/Si_1-xGe_x/Si junctions (p⁺ and n⁺) with ultra-low contact resistivity and low leakage have been fabricated and characterized. The junctions are formed via outdiffusion from a selectively deposited Si_0.7Ge _0.3 layer which is implanted and annealed using RTA. The Si _1-xGe_x layer can then be selectively thinned using NH₄OH/H₂O₂/H₂O at 75°C with little change in characteristics or left as-deposited. Leakage currents were better than 1.6×10^-9 A/cm² (areal), 7.45×10^-12 A/cm (peripheral) for p⁺/n and 3.5×10^-10 A/cm² (peripheral) for n⁺/p. W contacts were formed using selective LPCVD on Si_1-xGe_x. A specific contact resistivity of better than 3.2×10^-8 Ω cm² for p ⁺/n and 2.2×10^-8 Ω cm² for n⁺/p is demonstrated-an order of magnitude n⁺ better than current TiSi₂ technology. W/Si_1-xGe _x/Si junctions show great potential for ULSI applications     

A high-performance InGaAs/InAlAs double-heterojunction bipolartransistor with nonalloyed n+-InAs cap layer on InP(n) grownby molecular beam epitaxy

An InGaAs/InAlAs double-heterojunction bipolar transistor (DHBT) on InP(n) grown by molecular-beam epitaxy (MBE) that exhibits high DC performance is discussed. An n⁺-InAs emitter cap layer was used for nonalloyed contacts in the structure and specific contact resistances of 1.8×10^-7 and 6.0×10^-6 Ω-cm² were measured for the nonalloyed emitter and base contacts, respectively. Since no high-temperature annealing is necessary, excellent contact surface morphology on thinner base devices can easily be obtained. In devices with 50×50-μm² emitter area, common-emitter current gains as high as 1500 were achieved at a collector current density of 2.7×10³ A/cm² . The current gain increased up to 2000 for alloyed devices     

A low-noise microwave oscillator employing a self-alignedAlGaAs/GaAs HBT

A study is made of the application of heterojunction bipolar transistors (HBTs) to low-noise microwave circuits. Design considerations and the low-noise performance of a Ku-band free-running oscillator using a self-aligned AlGaAs/GaAs HBT are described. The device has a novel structure in which, by utilizing SiO ₂ sidewalls, the base surface area, which is the main cause of low-frequency noise, is drastically reduced. For a collector current of 1 mA, the fabricated device has base current noise power densities of 4×10^-20, 6×10^-21, and 2.5×10^-21 A²/Hz at baseband frequencies of 1, 10, and 100 kHz, respectively. A prototype oscillator operating at 15.5 GHz has a measured output power of 6 dBm and SSB FM noise power densities of -34 dBc/Hz at 1 kHz, -65 dBc/Hz at 10 kHz, and -96 dBc/Hz at 100 kHz off-carrier, without using high-Q elements such as a dielectric resonator. The results of this study demonstrate the suitability of HBTs for low-phase-noise microwave and millimeter-wave oscillator applications     

Diamond cold cathode

Diamond cold cathodes have been formed by fabricating mesa-etched diodes using carbon ion implantation into p-type diamond substrates. When these diodes are forward biased, current is emitted into vacuum. The cathode efficiency (emitted current divided by diode current) varies from 2×10^-4 to 1×10^-10 and increases with the addition of 10^-2-torr partial pressure of O₂ into the vacuum system. Current densities of 0.1 to 1 A-cm^-2 are estimated for a diode current of 10 mA. This compares favorably with Si cold cathodes (not coated with Cs), which have efficiencies of ~2×10^-5 and current densities of ~2×10^-2 A-cm^-2. It is believed that higher current densities and efficiencies can be obtained with more efficient cathode designs and an ultrahigh-vacuum environment     

Lasing mode behavior of a single-mode MQW laser injected with TMpolarized light

The lasing mode behavior of a multiple quantum well (MQW) distributed feedback (DFB) laser was measured when intensity-modulated orthogonally polarized transverse magnetic (TM) mode light was injected. The 3-dB bandwidth of the frequency response shows a trend different from that observed with conventional bias current modulation: at high bias currents, it decreases with increasing bias current. The maximum bandwidth of 3 dB was observed when the normalized bias current was 4, and it reached 16 GHz at this bias current. The gain saturation coefficients for the transverse electric (TE) and TM modes estimated from these results were ∈_p^E; 2.5×10^-17 cm³ and ∈_q^E 5.7×10^-18 cm³ for the TE mode, and ∈_p^M: 6.0×10^-17 cm³ and ∈_q^M: 2.0×10^-14 cm³ for the TM mode     

Enhancement of two-photon resonant third-harmonic generation of aCO2 laser in gaseous CD4

Third-harmonic conversion of a CO₂ laser in gaseous CD ₄ with an efficiency enhanced by two orders of magnitude over that previously achieved is reported, and results which demonstrate the effectiveness of confining the nonlinear process in a hollow, dielectric waveguide are given. Power conversion efficiencies of 4.9×10^-4 and 6.8×10^-3 are attained in focused beam and waveguide experiments, respectively     

Interferometric measurement of the linewidth enhancement factor ofa 1.55-μm strained multiquantum-well InGaAs/InGaAsP amplifier

The linewidth enhancement factor of an InGaAs/InGaAsP strained multiquantum well optical amplifier was measured interferometrically. It varied from 3 to 18 over the wavelength range from 1500 to 1600 nm with injection currents varying from one to four times the lasing threshold of the uncoated device. A rate equation model gave differential gain and refractive index change per carrier, respectively, in the range 0.3 to 2.5×10^-15 cm² and -5 to -8×10^-20 cm³     

High performance poly-Si TFTs fabricated using pulsed laserannealing and remote plasma CVD with low temperature processing

Key technologies for fabricating polycrystalline silicon thin film transistors (poly-Si TFTs) at a low temperature are discussed. Hydrogenated amorphous silicon films were crystallized by irradiation of a 30 ns-pulsed XeCl excimer laser. Crystalline grains were smaller than 100 nm. The density of localized trap states in poly-Si films was reduced to 4×10¹⁶ cm^-3 by plasma hydrogenation only for 30 seconds. Remote plasma chemical vapor deposition (CVD) using mesh electrodes realized a good interface of SiO ₂/Si with the interface trap density of 2.0×10¹⁰ cm^-2 eV^-1 at 270°C. Poly-Si TFTs were fabricated at 270°C using laser crystallization, plasma hydrogenation and remote plasma CVD. The carrier mobility was 640 cm²/Vs for n-channel TFTs and 400 cm²/Vs for p-channel TFTs. The threshold voltage was 0.8 V for n-channel TFTs and -1.5 V for p-channel TFTs. The leakage current of n-channel poly-Si TFTs was reduced from 2×10^-10 A/μm to 3×10^-13 A/μm at the gate voltage of -5 V using an offset gate electrode with an offset length of 1 μm     

High performance 0.35 μm gate-length monolithicenhancement/depletion-mode metamorphicIn0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates

Monolithic integration of enhancement (E)- and depletion (D)-mode metamorphic In_0.52Al_0.48As/In_0.53Ga_0.47 As/GaAs HEMTs with 0.35 μm gate-length is presented for the first time. Epilayers are grown on 3-inch SI GaAs substrates using molecular beam epitaxy. A mobility of 9550 cm²/V-s and a sheet density of 1.12×10^{12 -2} are achieved at room temperature. Buried Pt-gate was employed for E-mode devices to achieve a positive shift in the threshold voltage. Excellent characteristics are achieved with threshold voltage, maximum drain current, and extrinsic transconductance of 100 mV, 370 mA/mm and 660 mS/mm, respectively for E-mode devices, and -550 mV, 390 mA/mm and 510 mS/mm, respectively for D-mode devices. The unity current gain cutoff frequencies of 75 GHz for E-mode and 80 GHz for D-mode are reported     

Diode-pumped ytterbium-doped Sr5(PO4)3F laser performance

The performance of the first diode-pumped Yb³⁺-doped Sr ₅(PO₄)₃F (Yb:S-FAP) solid-state laser is discussed. An InGaAs diode array has been fabricated that has suitable specifications for pumping a 3×3×30 mm Yb:S-FAP rod. The saturation fluence for diode pumping was deduced to be 5.5 J/cm ² for the particular 2.8 kW peak power diode array utilized in our studies. This is 2.5× higher than the intrinsic 2.2 J/cm ² saturation fluence as is attributed to the 6.5 nm bandwidth of our diode pump array. The small signal gain is consistent with the previously measured emission cross section of 6.0×10^-20 cm², obtained from a narrowband-laser pumped gain experiment. Up to 1.7 J/cm³ of stored energy density was achieved in a 6×6×44 mm Yb:S-FAP amplifier rod. In a free running configuration, diode-pumped slope efficiencies up to 43% (laser output energy/absorbed pump energy) were observed with output energies up to ~0.5 J per 1 ms pulse. When the rod was mounted in a copper block for cooling, 13 W of average power was produced with power supply limited operation at 70 Hz with 500 μs pulses     

Gate oxide integrity of thermal oxide grown on high temperatureformed Si0.3Ge0.7

We have investigated the gate oxide integrity of thermal oxides direct grown on high temperature formed Si_0.3Ge_0.7. Good oxide integrity is evidenced by the low interface-trap density of 5.9×10¹⁰ eV^-1 cm^-2, low oxide charge density of -5.6×10¹⁰ cm^-2, and the small stress-induced leakage current after -3.3 V stress for 10 000 s. The good gate oxide integrity is due to the high temperature formed and strain-relaxed Si_0.3Ge_0.7 that has a original smooth surface and stable after subsequent high temperature process     

Diagnostics of TM010-mode microwave cavity discharges inCO2-N2-He laser gas mixtures. I. Measurement ofdielectric constant

Plasma parameters in the microwave discharged CO₂ laser gas mixtures of CO₂-N₂-He=0.9/2.5/20 at 25 Torr obtained using the perturbation method for a TM₀₁₀-mode cylindrical resonant cavity were examined. From the changes in resonant frequencies and Q values of the cavity, dielectric constant of the discharged plasma under the condition of RF to laser output power conversion ratio of 14% at mass flow rate of 4.2 kg/h was determined to be nearly 0.96-0.01j. It was also obtained from the dielectric constants of the plasma that electron number density, the electron temperature, and discharge parameters (E/n) were (0.3-3)×10¹⁵m^-3, 0.5-2.7 eV, and (0.5-2)×10^-15 Vcm², respectively     

Diamond grit-based field emission cathodes

This letter describes the fabrication and operation of diamond grit gated cathodes. The structure is similar to Spindt-type cathode, but the field emission cone is replaced with a more planar diamond grit layer 50 to 200 nm thick. Although the minimum lithographic dimension of these cathodes is from 1 to 5 μm, these devices have exceptionally low turn-on voltages, 5 to 7 V. Cathode current noise is less than 2.5% rms with a maximum absolute current variation of 6.7% over a 6 h period. These devices can operate in pressures of nitrogen above 133 Pa (1 Torr). Although operation in 6.6×10^-2 Pa (5×10 ^-4 Torr) with more reactive gasses, O₂ or H₂ S, degrades performance, the cathodes recover when the pressure is reduced to ⩽1.3×10^-4 Pa (1×10^-6 Torr). Gate current varies from 0.2 to 100 times the emitted current and depends on the technique used to deposit the diamond grit. High current densities (>10 A cm^-2), low gate voltages (<50 V), low emission noise, excellent longevity, temporal uniformity, and ease of fabrication make these devices potential cathodes for flat panel displays. However, excessive gate current and unsatisfactory processing reproducibility at present limit their general application