可反应性纳米SiO2/尼龙1010复合材料的制备和力学性能

以可反应性纳米SiO2(RNS)为填料,用熔融共混法制备SiO2/尼龙1010纳米复合材料,表征其力学性能并研究了增强和增韧机理.结果表明,在熔融共混过程中RNS与尼龙1010发生了强烈的界面相互作用,提高了材料的拉伸强度、断裂伸长率和弹性模量;而纳米SiO2的表面有机修饰层使材料的韧性有所提高.纳米SiO2质量分数为1.0%的复合材料拉伸强度最大,比纯尼龙1010的高4%;而0.7%纳米SiO2的复合材料断裂伸长率和弹性模量最大,分别比纯尼龙的高16.6%和13.4%.     

SYNTHESIS AND MECHANICAL PROPERITIES OF REACTABLE NANO-SILICA/PA1010 HYBRID COMPOSITES

以可反应性纳米SiO2(RNS)为填料, 用熔融共混法制备SiO2/尼龙1010纳米复合材料, 表征其力学性能并研究了增强和增韧机理. 结果表明,在熔融共混过程中RNS与尼龙1010发生了强烈的界面相互作用, 提高了材料的拉伸强度、断裂伸长率和弹性模量; 而纳米SiO2的表面有机修饰层使材料的韧性有所提高.纳米SiO2质量分数为1.0 %的复合材料拉伸强度最大, 比纯尼龙1010的高4%;而0.7%纳米SiO2 的复合材料断裂伸长率和弹性模量最大, 分别比纯尼龙的高16.6%和13.4%.     

表面修饰纳米SiO2与聚丙烯共混制备聚丙烯/SiO2纳米复合材料

二氧化硅纳米粒子经表面修饰将丙烯酸酯键接到SiO2表面制备出丙烯酸酯修饰SiO2纳米粒子.丙烯酸酯修饰SiO2纳米粒子与聚丙烯(PP)熔融共混制备PP/SiO2纳米复合材料.研究了纳米粒子对复合材料力学性能的影响,并对纳米粒子增韧机理进行了研究.研究结果表明:复合材料冲击强度在SiO2含量为3.5 wt%时达到最大值,SiO2纳米粒子对聚丙烯基体材料有很好的增强增韧效果.     

纳米SiC和SiO2与玻璃纤维混杂填充PA6的力学性能及摩擦磨损性能

采用注塑成型法制备纳米SiC和SiO2与玻璃纤维混杂填充PA6尼龙复合材料,对PA6复合材料的力学性能和摩擦学性能进行了实验研究,采用扫描电子显微镜观察分析磨损表面形貌。结果表明：纳米SiC或SiO2与玻璃纤维混杂填料能使PA6尼龙复合材料的拉伸强度和表面硬度增大。纳米SiOz与玻璃纤维混杂填料能使复合材料耐磨损性提高,以5％SiO2与玻璃纤维混杂填充耐磨性最佳;而纳米SiC与玻璃纤维混杂填料导致复合材料的磨损量增大,纳米SiC或SiO2与玻璃纤维混杂填充PA6复合材料的摩擦系数都低于尼龙材料。     

纳米SiO_2表面处理对MC尼龙复合材料结构与性能的影响

为提高MC尼龙的综合性能,采用KH-550硅烷偶联剂处理纳米SiO2,根据阴离子聚合反应制备MC尼龙SiO2纳米复合材料,探讨了表面处理纳米SiO2与熔体的作用机理,并进行复合材料的结构表征与性能测试.研究表明：纳米SiO2表面包覆硅烷偶联剂,其有机官能团氨基进攻聚合反应体系中酰亚胺结构的羰基,两者通过化学键实现界面结...     

尼龙66/SiO2纳米复合材料的界面结构及其对材料力学性能的影响

采用熔融共混的方法在双螺杆挤出机上制备出尼龙66/SiO2纳米复合材料,并利用红外光谱(FT-IR)、X射线光电子能谱(XPS)以及透射电子显微镜(TEM)对尼龙66/SiO2的界面进行了分析,结果发现,在熔融共混过程中经过表面改性的SiO2能够和尼龙66基体发生相互作用,形成一种基于共价键和氢键连接的界面层结构。力学性能测试结果表明这种界面结构的形成有利于纳米复合材料拉伸强度的提高。但对材料缺口冲击强度的影响并不明显。     

纳米SiO2含量对尼龙6/SiO2纳米复合材料蠕变性能的影响

通过原位聚合法制备了尼龙6/SiO2纳米复合材料。利用扫描电镜观测了复合材料的表面形貌,结果表明,纳米SiO2颗粒均匀地分布在尼龙6基体中。利用电子万能试验机对不同纳米SiO2含量的复合材料进行了短期(24 h)蠕变性能的测试,结果表明,随着纳米SiO2含量的增加,复合材料的抗蠕变性能也随着增大;在30 MPa、40 MPa和50 MPa的应力水平下,纳米SiO2含量为5%的纳米复合材料的蠕变应变分别比纯尼龙6降低了38.4%、61.0%和71.9%。     

纳米SiO_2与玻璃纤维含量对尼龙6显微硬度的影响

通过原位聚合和螺杆挤出法制备了尼龙6/SiO2纳米复合材料、尼龙6/GF复合材料和尼龙6/SiO2/GF纳米复合材料。利用显微硬度计对不同纳米SiO2和玻璃纤维(GF)含量的三种复合材料进行了测量,结果表明,对于尼龙6/SiO2纳米复合材料或者尼龙6/GF复合材料而言,材料的显微硬度随着纳米SiO2含量或者GF含量的增加而增大;对于尼龙6/SiO2/GF纳米复合材料而言,当GF含量一定时,SiO2含量高的材料显微硬度相应要高;从整个曲线来看,随着GF含量的增加,材料的显微硬度呈现先上升然后下降再上升的趋势。     

可分散性纳米SiO_2改性尼龙1010的制备和性能

采用表面经硅烷偶联剂原位修饰的纳米二氧化硅(SiO2)通过熔融共混的方法制备了纳米SiO2/尼龙l010复合材料,测试了材料的力学性能,并通过扫描电镜(SEM)、透射电镜(TEM)、X射线衍射(XRD)、热失重(TGA)等分析手段考察了纳米SiO2在聚合物基体中的分散情况、热稳定性能及聚合物的结晶形态。实验结果表明,通过熔融共混方法制得的复合物,其力学性能较尼龙1010有较大提高,纳米SiO2在聚合物中达到了均匀分散,SiO2的加入使尼龙1010的热稳定性能稍有提高;同时起异相成核作用,使晶体尺寸减小,γ晶型有所增加。     

不同改性剂对纳米SiO2／NR复合材料结构与力学性能的影响

采用硅烷偶联剂（Si-69、KH-590和KH-550）、钛酸酯偶联剂（NGT-201）和十二烷基硫酸钠作为纳米SiO2的表面改性剂，研究了不同改性剂对纳米SiO2／NR复合材料结构与力学性能的影响。结果表明，所采用的改性剂对纳米SiO2／NR复合材料具有较好的改性效果，其增强了纳米SiO2与天然橡胶的界面作用，改善了...     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Reactive plasma deposited SixCyHz films

Si_xC_yH_z films have been prepared at 200°C by reactive plasma deposition from SiH₄ and CH₄ diluted in helium in a tubular reactor. These films have a ratio s (equal to $\text{Si}\text{(}\text{Si+C}\text{))}$ ranging from 0.2 to 0.8, a refractive index ranging from 1.96 to 2.6 and an optical energy band gap in the range 2.7-2.2 eV. The total quantity of hydrogen in the film is 40% when s=0.5. Infrared analysis shows that these films have large fractions of homonuclear bonds and that this material is best described as a polymer. Mass spectrometric measurements of the gaseous products formed in the SiH₄-CH₄-He plasma have been performed and the results are related to the composition of the deposited layers.     

Core-current-enhanced domain-wall pinning in nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon

We have studied the influence of surface fields H/sub p/ (generated by either direct or alternating core current) on soft magnetic properties of amorphous and nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon. While in an amorphous ribbon the coercive field H/sub c/ decreases with H/sub p/, in the same optimally annealed ribbon (H/sub c/=1.3 A/m, M/sub m//spl ap/M/sub s/) H/sub c/ increases with H/sub p/ for all the explored types of H/sub p/ (static and dynamic with different phases with respect to that of the magnetizing field H). The unexpected increase of H/sub c/ in nanocrystalline ribbon is associated with the influence of H/sub p/ on the surface and main (inner) domain structure. Here, we develop a model that takes into account this influence and explains the experimental results.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.