2D-numerical analysis and optimum design of thin film silicon solar cells

Device modeling for p–i–n junction μc-Si basis thin film polycrystalline Si solar cells has been examined with a simple model of columnar grain structure and its boundary condition utilizing two-dimensional device simulator. As the simulation results of solar cell characteristics show, open-circuit voltage (V_oc) and curve fill factor (FF) considerably depend on those structural parameters, while short-circuit current density (J_sc) is comparatively stable by courtesy of homogeneous built-in electric field in the i layer. It has also been found that conversion efficiency over 12% could be expected with 1 μm grain size and well-passivated condition with 3 μm thick i-layer.     

Device simulation and modeling of microcrystalline silicon solar cells

Device modeling for p–i–n junction basis thin film microcrystalline Si solar cells has been examined with a simple model of columnar grain structure utilizing two-dimensional device simulator. The simulation results of solar cell characteristics show that open-circuit voltage (V_oc) and fill factor considerably depend on structural parameters such as grain size and acceptor doping in intrinsic layer, while short-circuit current density (J_sc) is comparatively stable by built-in electric field in the i-layer. It is also found that conversion efficiency of more than 16% could be expected with 1 μm grain size and well-passivated condition with 10 μm thick i-layer and optical confinement.     

Effect of hydrogen plasma treatment on grain boundaries in polycrystalline silicon solar cell evaluated by laser-beam-induced current

Effects of hydrogen plasma treatment on minority carrier diffusion length and recombination velocity at grain boundaries in polycrystalline silicon solar cells have been evaluated by the scanned laser-beam-induced current technique. We have successfully evaluated the two-dimensional minority carrier diffusion length. On the basis of the evaluated diffusion length, the recombination velocity at the grain boundaries was obtained. The recombination velocity was improved by the hydrogen plasma treatment from 15,000—20,000 to 5000—10,000 cm/s. It was quantitatively confirmed that the hydrogen plasma treatment is very effective in both grains and grain boundaries.     

Analytical modelling and minority current measurements for the determination of the emitter surface recombination velocity in silicon solar cells

A new analytical model is used to describe the emitter of silicon solar cells in order to gain information on the surface recombination velocity S. The procedure takes advantage of the combined use of experimental measurements, done to determine the emitter saturation current J_oe, and analytical modelling to relate J_oe to S. Several experiments have been carried out on silicon solar cells having different emitter profiles subjected to various surface treatments. The influence of the surface on significant cell parameters has been analysed.     

Spatial distribution of minority-carrier lifetime and local concentration of impurities in multicrystalline silicon solar cells

Spatial distribution of minority-carrier lifetime (τ) in multicrystalline silicon solar cells was investigated. By mapping of τ, a wide distribution in a higher-efficiency cell and a narrow distribution in a lower-efficiency cell was found, respectively. Based on the relation between τ and the density of grain boundaries, spatial distribution of impurities was characterized by secondary ion mass spectrometry. To clarify the spatial profile near grain boundaries, a method of changing detection area was carried out. Iron (Fe) segregation within 100 μm around a grain boundary was observed. In the lower-efficiency cell, a measurable amount of Fe was contained in a crystalline area as well.     

Process modeling and optimization of PECVD silicon nitride coated on silicon solar cell using neural networks

The process of plasma enhanced chemical vapor deposition silicon nitride films coated on silicon solar cells as antireflection layers is modeled and optimized using neural networks. This neural network model is built based on the robust design technique with process input–output experimental data. The input parameters selected are as substrate temperature, SiH₄ and NH₃ flow rates, and RF power; while the output parameters are deposition rate, refractive index, and short circuit current. This model can then be applied to predict the input–output relationships of the process. Optimal operating conditions of this process can be determined using this model.     

Temperature dependence of I-V characteristics and performance parameters of silicon solar cell

The temperature dependence of open-circuit voltage (V_oc) and curve factor (CF) of a silicon solar cell has been investigated in temperature range 295-320 K. The rate of decrease of V_oc with temperature (T) is controlled by the values of the band gap energy (E_g), shunt resistance (R_sh) and their rates of change with T. We have found that R_sh decreases nearly linearly with T and its affect on dV_oc/dT is significant for cells having smaller R_sh values. Series resistance also changes nearly linearly with voltage. CF depends not only on the value of R_s and other parameters but also on the rate of change of R_s with voltage. The rate of decrease of R_s with voltage and T are important to estimate the value of CF and its decrease with temperature accurately.     

Effect of texturing and surface preparation on lifetime and cell performance in heterojunction silicon solar cells

Heterojunction solar cells have potential for very high device voltages and currents, yet this relies on correct preparation of wafer surfaces prior to amorphous silicon (a-Si) deposition. This paper investigates the preparation of wafer surfaces by NaOH texturing and thinning prior to a-Si intrinsic layer deposition. It is found that with a CP etch or low-temperature anneal, and with correct deposition parameters, effective wafer lifetimes in excess of 1 ms can be achieved, indicating excellent surface passivation. Low reflectance achieved following wafer texturing along with high wafer lifetime led to efficiencies in finished devices as high as 17.6%.     

Crystal evaluation of spherical silicon produced by dropping method and their solar cell performance

The characterization of silicon spheres 1 mm in diameter, which were produced by a dropping method and solar cell performance using spheres are reported. Scanning electron microscopy observations of the Si spheres after Dash etching and X-ray pole figures indicate that the spherical Si has many defects and crystal grains. Systematic study of the crystal growth temperature and the atmosphere in the dropping area yields improvements in the crystallinity as well as a decrease in the concentrations of oxygen and carbon. Moreover, the spherical Si solar cell performance improved because these impurities are the prime factor for recombination centers.     

Low temperature polycrystalline silicon: a review on deposition, physical properties and solar cell applications

This review article gives a comprehensive compilation of recent developments in low temperature deposited poly Si films, also known as microcrystalline silicon. Important aspects such as the effect of ions and the frequency of the plasma ignition are discussed in relation to a high deposition rate and the desired crystallinity and structure. The development of various ion energy suppression techniques for plasma enhanced chemical vapour deposition and ion-less depositions such as HWCVD and expanding thermal plasma, and their effect on the material and solar cell efficiencies are described. The recent understanding of several important physical properties, such as the type of electronic defects, structural effects on enhanced optical absorption, electronic transport and impurity incorporation are discussed. For optimum solar cell efficiency, structural considerations and predictions using computer modelling are analysed. A correlation between efficiency and the two most important process parameters, i.e., growth rate and process temperature is carried out. Finally, the application of these poly Si cells in multijunction cell structures and the best efficiencies worldwide by various deposition techniques are discussed.     

Photoluminescence characteristics of CdS layers deposited in a chemical bath and their correlation to CdS/CdTe solar cell performance

In this work, we study CdS films processed by chemical bath deposition (CBD) using different thiourea concentrations in the bath solution with post-thermal treatments using CdCl₂. We study the effects of the thiourea concentration on the photovoltaic performance of the CdS/CdTe solar cells, by the analysis of the I–V curve, for S/Cd ratios in the CBD solution from 3 to 8. In this range of S/Cd ratios the CdS/CdTe solar cells show variations of the open circuit voltage (V_oc), the short circuit current (J_sc) and the fill factor (FF). Other experimental data such as the optical transmittance and photoluminescence were obtained in order to correlate to the I–V characteristics of the solar cells. The best performance of CdS–CdTe solar cells made with CdS films obtained with a S/Cd ratio of 6 is explained in terms of the sulfur vacancies to sulfur interstitials ratio in the CBD–CdS layers.     

Defect states on the surfaces of a P-type c-Si wafer and how they control the performance of a double heterojunction solar cell

“Heterojunction with intrinsic thin layer” solar cells combine the high efficiency of crystalline silicon (c-Si) cells, with the low cost of amorphous silicon technology. Here we use detailed numerical modeling and experiments to understand the influence, on the solar cell output parameters, of defects on the front and rear surfaces of the P-type c-Si wafer. Modeling indicates that the defects on the front surface of c-Si reduce the open-circuit voltage and fill factor, while those on the rear surface degrade mainly the short-circuit current density and fill factor, but only when their density exceeds 10¹² cm⁻².