单片集成的高频宽带LC VCO设计

设计了一款1.9~4.3 GHz的单片集成宽带VCO。采用三个低相位噪声LC VCO在频率上互相重叠的架构实现高频宽带特性,VCO内部集成中间抽头的差分电感。电路制造采用0.35μm SiGe BiCMOS工艺技术,VCO的工作频率达1.9~4.3 GHz,单元功耗仅为4 mA。在工作频率为2.46 GHz处,经过÷2分频器输出的相位噪声实测值为-97 dBc/Hz(100 kHz频偏下)。     

频率覆盖3.2～6.1 GHz的CMOS LC VCO

通过提高MIM电容的调整范围,实现了一个覆盖3.2～6.1 GHz的CMOS LC VCO.该VCO使用0.18μm射频CMOS工艺制作,芯片面积约为1260μm×670μm.当输出5.5GHz时,VCO内核消耗功率为17.5mW;在100kHz频偏处的相位噪声是～101.67dBc/Hz.     

MEMS-Based Tunable LC Bandstop Filter With an Ultra-Wide Continuous Tuning Range

This letter presents a new microelectromechanical system-based tunable LC filter that utilizes a tunable capacitor and a tunable inductor in a single device. An electrically floating metal plate is located between the tunable capacitor and the tunable inductor. As the floating metal plate is thermally moved and used commonly for both the capacitor and inductor, the device provides an ultra-wide continuous frequency tuning range by a simultaneous increase or decrease of the capacitance and inductance. The fabricated tunable LC filter showed a continuous frequency tuning ratio in excess of 127% in a range of 8.8 GHz to more than 20 GHz.      

80 GHz MMIC HEMT VCO

In this letter a monolithic voltage-controlled oscillator (VCO) operating in the 77.5-83.5 GHz range is presented. InP HEMTs are used for both the active device and varactor. The VCO demonstrated a tuning range of 6 GHz and an output power better than 12.5 dBm in the entire tuning range     

宽调节范围的二级压控振荡器

介绍了一种具有较宽频率调节范围的二级压控振荡器(VCO),调节频率达80%以上.在延时单元中利用传输门来控制振荡频率,通过理论推导和仿真证明了所采用传输门的等效电导随着控制电压线性变化.同时通过数模信号控制的方法优化了VCO的压控灵敏度KV.采用TSMC 0.25μm CMOS工艺参数进行了仿真,在KV保持在300 MHz/V左右时,频率调节范围为200 MHz～1.85 GHz.     

A 5-GHZ Low-Power Series-Coupled BiCMOS Quadrature VCO With Wide Tuning Range

This letter presents a novel quadrature voltage controlled oscillator (QVCO) implemented in a 47-GHz SiGe BiCMOS technology. The QVCO is a serially coupled LC VCO that utilizes SiGe heterojunction bipolar transistors for oscillation and metal oxide semiconductor field effect transistors for coupling. The SiGe BiCMOS QVCO prototype achieves about 14.6% tuning range from 4.3 to 5GHz. The phase noise of the QVCO is measured as -114.3 dBc/Hz at 2-MHz offset. The 5-GHz QVCO core consumes 6-mA current from a 3.3-V power supply and occupies 0.88mm² area     

基于SiGe BiCMOS技术的低功耗23G VCO

A 23 GHz voltage controlled oscillator(VCO) with very low power consumption is presented.This paper presents the design and measurement of an integrated millimeter wave VCO.This VCO employs an on-chip inductor and MOS varactor to form a high Q resonator.The VCO RFIC was implemented in a 0.18μm 120 GHz f_t SiGe hetero-junction bipolar transistor(HBT) BiCMOS technology.The VCO oscillation frequency is around 23 GHz,targeting at the ultra wideband(UWB) and short range radar applications.The core of the VCO circuit consumes 1 mA current from a 2.5 V power supply and the VCO phase noise was measured at around -94 dBc/Hz at a 1 MHz frequency offset.The FOM of the VCO is -177 dBc/Hz.     

94 GHz Voltage Controlled Oscillator With 5.8% Tuning Range in Bulk CMOS

A 94 GHz fundamental mode voltage controlled oscillator (VCO) is demonstrated using low leakage transistors in a 65 nm digital CMOS process with six metal layers. It achieves a tuning range of 5.8% and phase noise of ${-}$ 106 dBc/Hz at 10 MHz offset from a 94.9 GHz carrier. The output power varies between ${-}$ 4 and ${-}$ 8 dBm over the tuning range. The VCO draws 6 mA bias current from a 1.5 V supply and 6 mA from a 0.8 V supply.      

一种宽调节范围高线性度压控振荡电路的设计

介绍了一种基于0.8μm CMOS工艺的宽调节范围高线性度压控锯齿波振荡电路,同时利用Candence仿真工具对电路进行了仿真模拟.结果表明,产生的锯齿波压控调节范围为1.1~1.9MHz,中间频段线型度很高,且频率稳定、精度较高,可广泛应用在稳压器以及各种相位频率锁定系统中.     

一种中心频率可调的VCO电路设计

采用0.18μm CMOS工艺设计了一种用于高速锁相环系统的压控振荡器(VCO)电路,该电路的中心频率可根据需要进行调节.电路采用SMIC 0.18 μm工艺模型,使用Cadence的Spectre工具进行了仿真,仿真结果表明,该电路可工作在2.125～3.125 GHz范围内,在5 MHz频偏处的相位噪声为-105 dBc/Hz.     

高频宽调节范围压控振荡器设计研究

设计了一种基于0.18μm CMOS工艺模型的超高频宽调节范围的压控振荡器.系统采用3级环形压控振荡器结构,每级采用调节尾电流的方式,实现了2.5 GHz至5 GHz以上的高频宽调节范围.系统在输出频率为5 GHz时,在5 MHz频偏处的相位噪声为-89.26 dBc/Hz.此次设计的压控振荡器可广泛应用于各种嵌入式系统或ADC中,为其提供在大范围内可调节的时钟.     

A fully integrated VCO at 2 GHz

A fully integrated voltage-controlled oscillator at a frequency of 2 GHz with low phase noise has been implemented in a standard bipolar process with a f_t of 25 GHz. The design is based on an LC-resonator with vertical-coupled inductors. Only two metal layers have been used. The supply voltage of the oscillator is 2.7 V. The phase noise is only -136 dB/Hz at 4.7 MHz frequency offset. A tuning range of 150 MHz is achieved with integrated tuning diodes     

47 GHz VCO with low phase noise fabricated in a SiGe bipolarproduction technology

A low-phase-noise and low-cost millimeter-wave voltage-controlled oscillator (VCO) has been fully integrated in commercial SiGe bipolar technologies. By varying the bias voltage of the on-chip varactor, the frequency can be continuously tuned from 43.6 to 47.3 GHz. In this frequency range, single-sideband phase noise between -103 and -108.5 dBc/Hz at 1 MHz offset frequency was measured. The output voltage swing of the differential circuit is about 0.85 V_p-p for the single-ended and 1.7 V_p-p for the differential output     

A 36–80 GHz High Gain Millimeter-Wave Double-Balanced Active Frequency Doubler in SiGe BiCMOS

This letter presents a high conversion gain double-balanced active frequency doubler operating from 36 to 80 GHz. The circuit was fabricated in a 200 GHz ${rm f}_{rm T}$ and ${rm f}_{max}$ 0.18 $mu$m SiGe BiCMOS process. The frequency doubler achieves a peak conversion gain of 10.2 dB at 66 GHz. The maximum output power is 1.7 dBm at 66 GHz and ${-}3.9$ dBm at 80 GHz. The maximum fundamental suppression of 36 dB is observed at 60 GHz and is better than 20 dB from 36 to 80 GHz. The frequency doubler draws 41.6 mA from a nominal 3.3 V supply. The chip area of the active frequency doubler is 640 $mu$m $,times,$424 $mu$m (0.272 mm $^{2}$) including the pads. To the best of authors' knowledge, this active frequency doubler has demonstrated the highest operating frequency with highest conversion gain and output power among all other silicon-based active frequency doublers reported to date.      

A 2 GHz Phase-Locked Loop Frequency Synthesizer with On-Chip VCO

This paper discusses the implementation of the building blocks for a 2 GHz phase-locked loop frequency synthesizer in a standard 0.5 m BiCMOS process. These blocks include a low-power optimized dual modulus prescaler which is able to operate with input frequencies up to 2.7 GHz, a phase detector with extremely constant gain throughout the input phase difference range, a chargepump with a rail-to-rail output, and an on-chip voltage-controlled oscillator.     

A 580-μW 1.8–6 GHz Multiband Switched-Resonator SiGe VCO With 0.3-V Supply Voltage

This letter presents a fully integrated low-power low-voltage multiband switched-resonator differential cross-coupled voltage controlled oscillator (VCO) implemented in 0.18 SiGe-BiCMOS technology. The VCO operates with a supply voltage as low as 0.29 V, owing to the low knee-voltage provided by the technology, and consumes a total power of 580 muW. Utilizing a switched-resonator, the VCO covers a wide switched frequency range of 1.83-2.97 GHz and 4.36-6.17 GHz with measured phase noise of around 112.2 dBc/Hz with 0.29 V supply and 119.7 dBc/Hz with 1 V supply at 1 MHz offset. Since high-frequency bands experience higher phase noise than the low frequency bands, high- short microstrip line inductors have been used for the high-frequency bands. To the best of the authors' knowledge, the reported VCO achieves the widest switched frequency tuning range with lowest core supply voltage.     

SiGe bipolar transceiver circuits operating at 60 GHz

A low-noise amplifier, direct-conversion quadrature mixer, power amplifier, and voltage-controlled oscillators have been implemented in a 0.12-/spl mu/m, 200-GHz f/sub T/290-GHz f/sub MAX/ SiGe bipolar technology for operation at 60 GHz. At 61.5 GHz, the two-stage LNA achieves 4.5-dB NF, 15-dB gain, consuming 6 mA from 1.8 V. This is the first known demonstration of a silicon LNA at V-band. The downconverter consists of a preamplifier, I/Q double-balanced mixers, a frequency tripler, and a quadrature generator, and is again the first known demonstration of silicon active mixers at V-band. At 60 GHz, the downconverter gain is 18.6 dB and the NF is 13.3 dB, and the circuit consumes 55 mA from 2.7 V, while the output buffers consume an additional 52 mA. The balanced class-AB PA provides 10.8-dB gain, +11.2-dBm 1-dB compression point, 4.3% maximum PAE, and 16-dBm saturated output power. Finally, fully differential Colpitts VCOs have been implemented at 22 and 67 GHz. The 67-GHz VCO has a phase noise better than -98 dBc/Hz at 1-MHz offset, and provides a 3.1% tuning range for 8-mA current consumption from a 3-V supply.     

An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology

This paper reports on the design, fabrication, and characterization of a lumped broadband amplifier in SiGe bipolar technology. The measured differential gain is 20 dB with a 3-dB bandwidth of more than 84 GHz, which is the highest bandwidth reported so far for broadband SiGe bipolar amplifiers. The resulting gain bandwidth product (GBW) is more than 840 GHz. The amplifier consumes a power of 990 mW at a supply of -5.5 V.     

一种宽带低相噪CMOS LC压控振荡器设计

设计了一种频率可调范围约830MHz全集成CMOS LC压控振荡器.该压控振荡器利用了一种改进的四位二进制加权的开关电容阵列扩大了其调谐范围;采用了可变尾电流源设计,使得振荡信号在整个频率范围内幅度变化不大.结果表明,该压控振荡器总调节范围1.12～1.95GHz,功耗为6.5～19.1mW,采用0.35μm CMOS RF工艺设计版图面积为360μm×830μm,工作于1.1GHz和1.9GHz时,1MHz频偏处的单边带相位噪声分别为-122dBc/ Hz、-120dBc/ Hz.     

电波暗室1～18GHz性能的测试方法

文章介绍EMC电波暗室性能指标中与1～18GHz归一化场地衰减NSA、场地电压驻波比(SVSWR)和场均匀性(FU)三项指标相关的IEC/CISPR/A和IEC/SC77B委员会草案CISPR/A/342/CD、CISPR/A/531/CD和77B/429/CDV,这三项指标的校验和评估方法既适用于全电波暗室也适用于在接地平板上加铺适当数量吸波材料的半电波暗室.