共查询到20条相似文献,搜索用时 78 毫秒
1.
功率VDMOS器件低剂量率辐射损伤效应研究 总被引:1,自引:0,他引:1
研究了抗辐射加固功率VDMOS器件在不同偏置条件下的高/低剂量率辐射损伤效应,探讨了阈值电压、击穿电压、导通电阻等电参数在不同剂量率辐照时随累积剂量的变化关系.实验结果表明,此型号抗辐射加固功率VDMOS器件在高/低剂量率辐照后参数的漂移量相差不大,不具有低剂量率辐射损伤增强效应.认为可以用高剂量率辐照后高温退火的方法评估器件的总剂量辐射损伤.实验结果为该型号抗辐射加固功率VDMOS器件在航空、航天等特殊领域的应用提供了技术支持. 相似文献
2.
3.
4.
5.
双极线性稳压器(LM317)的电离总剂量效应及剂量率的影响 总被引:1,自引:0,他引:1
对一款双极集成、三端线性稳压器LM317进行了不同偏置、不同剂量率条件下的电离辐射效应及室温退火特性研究。研究结果表明:器件输出电压、输入输出压差等敏感参数在电离辐射环境下发生了不同程度的变化,且在零偏偏置辐照下的变化比工作偏置辐照下的变化大;在零偏偏置条件,总剂量相同时低剂量率辐照下的损伤明显大于高剂量率辐照,表现出低剂量率损伤增强效应;在工作偏置条件,高剂量率辐照下的损伤大于低剂量率辐照下的损伤,但随后的退火实验中恢复到低剂量率辐照损伤水平,表现出时间相关效应。对稳压器辐射敏感参数的影响因素和不同偏置下的剂量率影响进行了分析和讨论。 相似文献
6.
7.
测量了SiGe HBT直流增益在60Coγ辐照过程中随剂量及器件电流注入水平的变化。实验结果显示在累计辐照剂量超过5 000 Gy(Si)后,器件电流增益变化与辐照剂量存在线性反比关系,且增益损伤系数与器件电流注入水平有关;器件在受到总剂量为2.78×104Gy(Si)辐照后,器件静态基极电流Ib、集电极电流Ic、静态直流增益及最大振荡频率fmax出现不同程度退化;但器件其他电参数如截止频率fT、交流增益|H21|及结电容(CCBO)与辐照前相比未出现显著退化。利用MEDICI数值模拟分析了SiGe HBT参数退化机理。 相似文献
8.
对低功率、升压型集成式DC-DC电源变换器的电离总剂量辐射损伤效应进行了研究。探讨了变换器在不同负载、不同输入电压条件下输出电压随总剂量的变化关系;揭示了升压型器件在高剂量率条件下输出电压瞬间损伤退化机理;分析了器件在关机模式(Shutdown mode)条件下关机电流变化规律。详细研究了负载电流对输出电压的影响,实验结果表明,相同辐照剂量,输出电压的退化程度随负载电流的增加而增大,满载条件下,输出电压退化最严重。关机电流在关机模式条件下出现显著退化,可以作为评估器件抗辐射性能的敏感参数。此外,发现Boost器件满载条件下高剂量率损伤效应,高剂量率条件下的输出电压瞬间损伤退化显著大于低剂量率下的输出电压退化。研究剂量率辐射效应对分析和评估应用于核电站环境下的DC-DC电源变换器辐射损伤具有重要意义。 相似文献
9.
10.
11.
Michael Reilly 《半导体技术》2004,29(12)
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system. 相似文献
12.
Thomas M.Trexler 《半导体技术》2004,29(5)
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test. 相似文献
13.
The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation. 相似文献
14.
The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high. 相似文献
15.
Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible. 相似文献
16.
Qi-jiang Ran Pei-de Han Yu-jun Quan Li-peng Gao Fan-ping Zeng Chun-hua Zhao 《光电子快报》2008,4(4):239-242
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's. 相似文献
17.
Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers
A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it. 相似文献
18.
A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working. 相似文献
19.
It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output(MIMO) communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory. 相似文献
20.
《中国通信》2014,(7)
正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks 相似文献