Phase,microstructure and sintering of aluminum nitride powder by the carbothermal reduction-nitridation process with Y2O3 addition

Aluminum nitride powders were synthesized by carbothermal reduction-nitridation method using Al(OH)₃, carbon black and Y₂O₃ as raw materials. The change of phase, microstructure and densification during the AlN synthesis and sintering process were investigated and the effects of Y₂O₃ was discussed. The results showed that Y₂O₃ reacted with Al₂O₃ to form yttrium aluminates of YAlO₃ (orthorhombic and hexagonal phases), Y₄Al₂O₉ and Y₃Al₅O₁₂ at the low temperature of 1350 °C. YAlO₃ could firstly be transformed into Y₂O₃ and then completely into YN when the firing temperature and holding time increased. However, YN could be oxidized into Y₂O₃ again after the carbon removal at 700 °C in the air atmosphere. There were two ways generating AlN when adding Y₂O₃ and the possible mechanism was proposed. Y₂O₃ from YN oxidation favored the densification of AlN ceramics because the liquid had better flowability and distribution in the sintering process at 1800 °C.     

Aqueous colloidal processing of SiC with Y3Al5O12 liquid-phase sintering additives

The aqueous colloidal processing of SiC with Y₃Al₅O₁₂ liquid-phase sintering additives was investigated for two different additive systems, one the mixture of Y₂O₃ and Al₂O₃ in a 3:5 molar ratio and the other directly Y₃Al₅O₁₂. The investigation involved the study of the colloidal stability of the different components, and the comparison of the rheological behaviour of concentrated suspensions of SiC, SiC + 3Y₂O₃:5Al₂O₃, and SiC + Y₃Al₅O₁₂ as a function of the sonication condition, dispersant content, and solid loading. This allowed appropriate conditions for the preparation of well-dispersed, single-phase, and multi-component concentrated suspensions of SiC to be identified. It was found that the multi-component suspensions have better rheological behaviour than the single-phase ones, and that in terms of rheology and slip casting the Y₃Al₅O₁₂ additives are more functional than the conventional 3Y₂O₃ + 5Al₂O₃ additives. It was also demonstrated that the Y₃Al₅O₁₂ additive is as effective as the 3Y₂O₃ + 5Al₂O₃ additive in densifying SiC via liquid-phase sintering, with there existing no differences either in the microstructure or in room-temperature mechanical properties (hardness, toughness, and fracture mode). Implications of interest for the wet-shaping of complex SiC parts are discussed.     

Oxidation behaviour of pressureless liquid-phase-sintered α-SiC with additions of 5Al2O3 + 3RE2O3 (RE = La,Nd, Y,Er, Tm,or Yb)

The oxidation behaviour of pressureless liquid-phase-sintered (PLPS) α-SiC was investigated as a function of the sintering additives of 5Al₂O₃ + 3RE₂O₃ (RE = La, Nd, Y, Er, Tm, or Yb) by thermogravimetry experiments in oxygen at 1075–1400 °C for up to 22 h. It was found that the oxidation is in all cases passive and protective, with kinetics governed by the arctan-rate law. This is because the PLPS SiC ceramics develop oxide scales having no cracks or open porosity and accordingly prevent the parent material from direct contact with oxygen. In addition, these oxide scales crystallize gradually during the exposure to the oxidizing atmosphere with the attendant reduction in the amorphous cross-section available for oxygen diffusion. It was also found that the rate-limiting mechanism of the oxidation is outward diffusion of RE³⁺ cations from the intergranular phase into the oxide scale, and that the activation energy of the oxidation increases with increasing size of the RE³⁺ cation. It was also observed that the oxidation of PLPS SiC increases with increasing size of the RE³⁺ cation, an effect that is especially marked for cation sizes above 0.9 Å because the oxidation rate becomes several orders of magnitude faster. This trend is attributable to the oxide scales being more crystalline, and containing crystals that are more refractory and amorphous residual phases that are more viscous as the size of the RE³⁺ cation decreases. Finally, implications for the design of PLPS SiC ceramics with superior oxidation resistance are discussed.     

Gelcasting and pressureless sintering of silicon carbide ceramics using Al2O3–Y2O3 as the sintering additives

In this paper, silicon carbide ceramics were prepared by aqueous gelcasting and pressureless sintering using Al₂O₃ and Y₂O₃ as the sintering additives. In order to develop well dispersed SiC slurries in the presence of sintering additives, the Al₂O₃ and Y₂O₃ powder was treated in the citric acid solution in advance. Zeta potential measurement showed that the isoelectric point (IEP) of Al₂O₃ and Y₂O₃ powder moved toward low pH region after treatment. Rheological measurement confirmed that the addition of as-treated powder showed very limited influence on the slurry properties as compared to that of untreated powder. SiC slurries with solid content of 54 vol% and enough fluidity can be developed. After gelcasting and pressureless sintering, SiC ceramics with nearly full density, fine grained and homogeneous microstructure can be obtained. Results showed that the surface treatment of Al₂O₃ and Y₂O₃ with citric acid is effective for the gelcasting process of SiC.     

Inhibition of grain growth in liquid-phase sintered SiC ceramics by AlN additive and spark plasma sintering

SiC ceramics were prepared from nanosized β-SiC powder with different compositions of AlN and Y₂O₃ sintering additives by spark plasma sintering (SPS) at 1900 °C for 600 s in N₂. The relative density of the sintered SiC specimens increased with increasing amount of AlN, reaching a relative density higher than 99%, while at the same time grain size decreased significantly. The smallest average grain size of 150 nm was observed for SiC sample sintered with 10 vol% of additives consisting of 90 mol% AlN and 10 mol% Y₂O₃. Fully dense nanostructured SiC ceramics with inhibited grain growth were obtained by the AlN additive and SPS technique. The flexural strength of the SiC body containing 70 mol% AlN and 30 mol% Y₂O₃ additives reached the maximum value of 1000 MPa. The SiC bodies prepared with AlN and Y₂O₃ additives had the fracture toughness of around 2.5 MPam^1/2.     

Microstructure and mechanical properties of silicon carbide pressureless sintered with oxide additives

It is known that SiC powders can be densified at relatively low temperatures (1850–2000 °C) with some oxide additions. In this work the densification behavior, microstructure and mechanical properties (bending strength, fracture toughness, hardness) of SiC ceramics pressureless sintered with different additions chosen from oxide groups: Al₂O₃ + Y₂O₃, Al₂O₃ + Y₂O₃ + MgO, were investigated. It was found that oxide additives facilitate densification of sinters and significantly improve mechanical properties of SiC ceramics. The best activating oxide additions have been identified.     

Effects of Y2O3 additives and powder purity on the densification and grain boundary composition of Al2O3/SiC nanocomposites

Sub-micron sized SiC additions can be used to increase the wear resistance and change the fracture mode of Al₂O₃. However, these additions also restrict sintering.Al₂O₃ and Al₂O₃–5%SiC ‘nanocomposites’ were prepared from alumina powders of high purity and of commercial-purity, with or without the addition of Y₂O₃. The effects of these compositional variables on sintering rate, final density and grain boundary composition were investigated. A direct comparison with Al₂O₃–SiO₂ composites was also made, as it has been proposed that SiC partially oxidises during processing of Al₂O₃–SiC nanocomposites.The addition of 5 vol.% SiC to Al₂O₃ hindered densification, as did addition of 0.15 wt.% Y₂O₃ or 0.1 wt.% SiO₂. In contrast, the addition of 0.15 wt.% Y₂O₃ to Al₂O₃–5% SiC nanocomposites improved densification.The composition of Al₂O₃–Al₂O₃ grain boundaries in these materials was studied using STEM and EDX microanalysis. The addition of SiC and SiO₂ caused segregation of Si, and Y₂O₃ addition caused segregation of Y. The segregation of each element was equivalent to <10% of a monolayer at the grain boundary. However, if SiC and Y₂O₃ were simultaneously added the segregation increased to 40% of a monolayer. The enhanced segregation was attributed to increased oxidation of SiC in the presence of Y₂O₃ allowing formation of a SiO₂–Al₂O₃–Y₂O₃ eutectic phase or a segregated layer which may explain the improvement in sintering rate when Y₂O₃ was added to nanocomposites.     

Spark plasma sintering of Sm2O3-doped aluminum nitride

The high sintering temperature required for aluminum nitride (AlN) at typically 1800 °C, is an impediment to its development as an engineering material. Spark plasma sintering (SPS) of AlN is carried out with samarium oxide (Sm₂O₃) as sintering additive at a sintering temperature as low as 1500–1600 °C. The effect of sintering temperature and SPS cycle on the microstructure and performance of AlN is studied. There appears to be a direct correlation between SPS temperature and number of repeated SPS sintering cycle per sample with the density of the final sintered sample. The addition of Sm₂O₃ as a sintering aid (1 and 3 wt.%) improves the properties and density of AlN noticeably. Thermal conductivity of AlN samples improves with increase in number of SPS cycle (maximum of 2) and sintering temperature (up to 1600 °C). Thermal conductivity is found to be greatly improved with the presence of Sm₂O₃ as sintering additive, with a thermal conductivity value about 118 W m⁻¹ K⁻¹) for the 3 wt.% Sm₂O₃-doped AlN sample SPS at 1500 °C for 3 min. Dielectric constant of the sintered AlN samples is dependent on the relative density of the samples. The number of repeated SPS cycle and sintering aid do not, however, cause significant elevation of the dielectric constant of the final sintered samples. Microstructures of the AlN samples show that, densification of AlN sample is effectively enhanced through increase in the operating SPS temperature and the employment of multiple SPS cycles. Addition of Sm₂O₃ greatly improves the densification of AlN sample while maintaining a fine grain structure. The Sm₂O₃ dopant modifies the microstructures to decidedly faceted AlN grains, resulting in the flattening of AlN–AlN grain contacts.     

Electrical resistivity of silicon carbide ceramics sintered with 1 wt% aluminum nitride and rare earth oxide

The influence of additive composition on the electrical resistivity of hot-pressed liquid-phase sintered (LPS)-SiC was investigated using AlN–RE₂O₃ (RE = Sc, Nd, Eu, Gd, Ho, Er, Lu) mixtures at a molar ratio of 60:40. It was found that all specimens could be sintered to densities >95% of the theoretical density by adding 5 wt% in situ-synthesized nano-sized SiC and 1 wt% AlN–RE₂O₃ additives. Six out of seven SiC ceramics showed very low electrical resistivity on the order of 10^?4 Ω m. This low electrical resistivity was attributed to the growth of nitrogen-doped SiC grains and the confinement of non-conducting RE-containing phases in the junction areas. The SiC ceramics sintered with AlN–Lu₂O₃ showed a relatively high electrical resistivity (～10^?2 Ω m) due to its lower carrier density (～10¹⁷ cm^?3), which was caused by the growth of faceted grains and the resulting weak interface between SiC grains.     

Annealing effect on dielectric property of AlN ceramics

Effects of slow-cooling at high temperatures and annealing at intermediate temperatures on dielectric loss tangent of AlN ceramics were explored. Y₂O₃ was added as a sintering additive to AlN powders, and the powders were pressureless-sintered at 1900 °C for 2 h in a nitrogen flow atmosphere. In succession to the sintering, AlN samples were slow-cooled at a rate of 1 °C/min from 1900 to 1750 °C and/or annealed at 970 °C for 4 h. Al₅Y₃O₁₂ was detected in the AlN ceramics obtained by the slow-cooling and AlYO₃ was found in the ceramics cooled at a rate of 30 °C/min. AlN ceramics with a relative density of 0.986 were obtained by the slow-cooling method. On the other hand, very low tan δ values between 2.6 and 4.6 × 10⁻⁴ were obtained when the AlN ceramics were annealed at 970 °C for 4 h.     

Phase stability and thermal conductivity of RE2O3 (RE=La,Nd, Gd,Yb) and Yb2O3 co-doped Y2O3 stabilized ZrO2 ceramics

Y₂O₃ stabilized ZrO₂ (YSZ) has been considered as the material of choice for thermal barrier coatings (TBCs), but it becomes unstable at high temperatures and its thermal conductivity needs to be further reduced. In this study, 1 mol% RE₂O₃ (RE=La, Nd, Gd, Yb) and 1 mol% Yb₂O₃ co-doped YSZ (1RE1Yb–YSZ) were fabricated to obtain improved phase stability and reduced thermal conductivity. For 1RE1Yb–YSZ ceramics, the phase stability of metastable tetragonal (t′) phase increased with decreasing RE³⁺ size, mainly attributable to the reduced driving force for t′ phase partitioning. The thermal conductivity of 1RE1Yb–YSZ was lower than that of YSZ, with the value decreasing with the increase of the RE³⁺ size mainly due to the increased elastic field in the lattice, but 1La1Yb–YSZ exhibited undesirably high thermal conductivity. By considering the comprehensive properties, 1Gd1Yb–YSZ ceramic could be a good potential material for TBC applications.     

Sintering,microstructure and mechanical properties of Al2O3–Y2O3–ZrO2 (AYZ) eutectic composition ceramic microcomposites

We report on how the mechanical properties of sintered ceramics (i.e., a random mixture of equiaxed grains) with the Al₂O₃–Y₂O₃–ZrO₂ eutectic composition compare with those of rapidly or directionally solidified Al₂O₃–Y₂O₃–ZrO₂ eutectic melts. Ceramic microcomposites with the Al₂O₃–Y₂O₃–ZrO₂ eutectic composition were fabricated by sintering in air at 1400–1500 °C, or hot pressing at 1300–1400 °C. Fully dense, three phase composites of Al₂O₃, Y₂O₃-stabilized ZrO₂ and YAG with grain sizes ranging from 0.4 to 0.8 μm were obtained. The grain size of the three phases was controlled by the size of the initial powders. Annealing at 1500 °C for 96 h resulted in grain sizes of 0.5–1.8 μm. The finest scale microcomposite had a maximum hardness of 19 GPa and a four-point bend strength of 282 MPa. The fracture toughness, as determined by Vickers indentation and indented four-point bending methods, ranged from 2.3 to 4.7 MPa m^1/2. Although strengths and fracture toughnesses are lower than some directionally or rapidly solidified eutectic composites, the intergranular fracture patterns in the sintered ceramic suggest that ceramic microcomposites have the potential to be tailored to yield stronger, tougher composites that may be comparable with melt solidified eutectic composites.     

Effects of Y2O3–RE2O3 (RE = Sm,Gd, Lu) Additives on Electrical and Thermal Properties of Silicon Carbide Ceramics

In this study, we investigated the electrical and thermal properties of SiC ceramics with 2 vol% equimolar Y₂O₃–RE₂O₃ (RE = Sm, Gd, Lu) additives. The three SiC ceramics with 2 vol% equimolar Y₂O₃–RE₂O₃ additives showed electrical conductivities on the order of ~10³ (Ω·m)^?1, which is one order of magnitude higher than that of the SiC ceramics sintered with 2 vol% Y₂O₃ only. The increase in electrical conductivity is attributed to the growth of heavily nitrogen‐doped SiC grains during sintering and the confinement of oxide additives in the junction area. The thermal conductivities of the SiC ceramics were in the 176–198 W·(m·K)^?1 range at room temperature. The new additive systems, equimolar Y₂O₃–RE₂O₃, are beneficial for achieving both high electrical conductivity and high thermal conductivity in SiC ceramics.     

Fabrication and properties of Y2O3 transparent ceramic by sintering aid combinations

Transparent Y₂O₃ ceramics were fabricated by the solid-state reaction and vacuum sintering method using La₂O₃, ZrO₂ and Al₂O₃ as sintering aids. The microstructure of the Y₂O₃ ceramics sintered from 1550 °C to 1800 °C for 8 h were analyzed by SEM. The sintering process of the Y₂O₃ transparent ceramics was optimized. The results showed that when the samples were sintered at 1800 °C for 8 h under vacuum, the average grain sizes of the ceramics were about 3.5 µm. Furthermore, the transmittance of Y₂O₃ ceramic sintered at 1800 °C for 8 h was 82.1% at the wavelength around the 1100 nm (1 mm thickness), which was close to its theoretical value. Moreover, the refractive index of the Y₂O₃ transparent ceramic in the temperature range from 30 °C to 400 °C were measured by the spectroscopic ellipsometry method.     

Influence of Y2O3 addition on electrical properties of β-SiC ceramics sintered in nitrogen atmosphere

The influence of Y₂O₃ addition on electrical properties of β-SiC ceramics has been investigated. Polycrystalline SiC samples obtained by hot-pressing SiC–Y₂O₃ powder mixtures in nitrogen (N) atmosphere contain Y₂O₃ clusters segregated between SiC grains. Y₂O₃ forms a Y–Si-oxycarbonitride phase during sintering by reacting with SiO₂ and SiC and by dissolution of N from the atmosphere; this induces N doping into the SiC grains during the process of grain growth. The SiC samples exhibit an electrical resistivity of ～10^?3 Ω cm and a carrier density of ～10²⁰ cm^?3, which are ascribed to donor states derived from N impurities. The increase in defect density with increasing Y₂O₃ content is likely to be a main limiting factor of the electrical conductivity of SiC ceramics.     

The effect of Sm2O3 on the microstructure and electrical properties of SiO2-doped SnO2-Zn2SnO4 ceramic varistors

In this work, Sm₂O₃- and SiO₂-codoped SnO₂-Zn₂SnO₄ ceramic varistors were prepared through traditional ceramic processing, and the effect of Sm₂O₃ on the resulting microstructure and electrical properties was investigated. The results demonstrated that the ceramics were composed mainly of SnO₂ and Zn₂SnO₄, and Sm was distributed homogeneously in the grains and along the grain boundaries. With 0.2 mol% Sm₂O₃ doping, the grain growth was obviously promoted. Further increases in Sm₂O₃ to 0.4 mol% resulted in trace amount of SiO₂ and segregations containing elemental Sm via X-ray diffraction patterns and microstructure photos, respectively. In the sample doped with 0.3 mol% Sm₂O₃, optimal electrical characteristics of α=9.4, E_B=10 V/mm, J_L=46 μA/cm² and ε′=1.2×10⁴ were obtained. Simultaneously, the sample doped with 0.3 mol% Sm₂O₃ had the lowest conductance activation energy of 0.16 eV at temperatures lower than 110 °C. This good performance indicates that Sm₂O₃- and SiO₂-codoped SnO₂-Zn₂SnO₄ composite ceramics are viable candidate for the manufacture of capacitor-varistor functional devices.     

Electrical properties of (Na2O)35.7(RE2O3)7.2(SiO2)57.1 (RE = Y,Sm, Gd,Dy, Ho,Er and Yb) glasses and ceramics

Fifteen kinds of sodium rare earth silicate glasses and ceramics with (Na₂O)_35.7(RE₂O₃)_7.2(SiO₂)_57.1 (RE = Y, Sm, Gd, Dy, Ho, Er and Yb) composition were synthesized from a mixture of Na₂CO₃, RE₂O₃ and SiO₂. The densities of the glasses were in fairly good agreement with the theoretical densities and were 0.2–0.41 g cm⁻³ larger than those of the polycrystalline ceramics. The conductivities of the glasses are 1–2 orders lower than those of the ceramics and the highest electrical conductivity was achieved for the Yb ceramic sample with the smallest ion radius of RE³⁺. The electromotive force, EMF, of the potentiometric CO₂ gas sensors using (Na₂O)_35.7(Y₂O₃)_7.2(SiO₂)_57.1 glass and ceramic increased linearly with an increase in the logarithm of CO₂ partial pressure, in accordance with Nernst's law. It was suggested from the slope of Nernst's equation that the two electron-transfer reaction associated with the carbon dioxide molecule takes place at the detection electrode above 450 °C.     

Fabrication and electromagnetic interference shielding effectiveness of Ti3Si(Al)C2 modified Al2O3/SiC composites

A dense alumina fiber reinforced silicon carbide matrix composites (Al₂O₃/SiC) modified with Ti₃Si(Al)C₂ were prepared by a joint process of chemical vapor infiltration, slurry infiltration and reactive melt infiltration. The conductive Ti₃Si(Al)C₂ phase introduced into the matrix modified the microstructure of Al₂O₃/SiC. The refined microstructure was composed of conductive phase, semiconductive phase and insulating phase, which led to admirable electromagnetic shielding properties. Electromagnetic interference shielding effectiveness (EMI SE) of Al₂O₃/SiC and Ti₃Si(Al)C₂ modified Al₂O₃/SiC were investigated over the frequency range of 8.2–12.4 GHz. The EMI SE of Al₂O₃/SiC-Ti₃Si(Al)C₂ exhibited a significant increase from 27.6 to 42.1 dB compared with that of Al₂O₃/SiC. The reflection and absorption shielding effectiveness increased simultaneously with the increase of the electrical conductivity.