共查询到20条相似文献,搜索用时 78 毫秒
1.
在传统无电容型LDO的基础上,设计了一种带瞬态增强的无电容型LDO。采用频率补偿方案,有效减小所需的片上补偿电容,节约了芯片面积。采用了过冲/下冲检测电路,用于检测负载瞬间变化时输出电压的变化,通过调节功率管栅极电压,提升了LDO的瞬态响应速度。采用0.13 μm标准CMOS工艺,对设计的瞬态增强无电容型LDO进行仿真验证。结果表明,片上补偿电容为2 pF时,系统静态电流为30 μA,当负载在1 μs内从1 mA变化到50 mA时,输出电压过冲为88 mV,下冲为50 mV,与不带过冲/下冲检测电路的LDO相比,分别提高了56%和54%。 相似文献
2.
3.
设计了一种快速瞬态响应的无片外电容型LDO。采用高增益高带宽的超级跨导结构(STC)的误差放大器,利用动态偏置技术与电容耦合技术,极大地增强了摆率。引入额外的快速响应环路,进一步提升了瞬态响应速度。基于0.18 μm CMOS工艺进行设计。结果表明,该LDO的最低供电电压为1 V,漏失电压仅为200 mV,可提供最大100 mA的负载电流,能在最大输出电容为100 pF、最低负载为50 μA的条件下保证电路稳定。负载电流在0.5 μs内由50 μA跳变至100 mA时,LDO输出导致的过冲电压和下冲电压分别为200 mV和306 mV。 相似文献
4.
基于SMIC 0.18 μm BCD工艺设计了一种低静态电流、高瞬态响应的无片外电容 低压差线性稳压器(Low Dropout Regulator, LDO)。误差放大器采用一种跨导提升技术,在低静态电流的情况下,实现更高的环路增益及单位增益带宽。由于采用高增益误差放大器,可以通过适当减少功率管尺寸来增强瞬态响应。采用有源反馈,在不引入额外静态电流情况下,增大环路的次极点。同时当LDO输出电压变化时,能够增大功率管栅极的动态电流,实现高瞬态响应。此外在有源反馈的基础上,采用反馈电阻并联小电容的方式,以提高环路稳定性。利用Cadence Spectre软件对LDO进行仿真验证。结果显示,LDO的静态电流仅为10 μA;在负载电流为1 mA的情况下,相位裕度最高可达70.9°;LDO负载电流在500 ns内从1 mA切换到100 mA时,下冲电压为134.7 mV,下冲电压恢复时间为1 μs;负载电流在500 ns内从100 mA切换到1 mA时,过冲电压为155.5 mV,过冲电压恢复时间为430 ns。 相似文献
5.
程立黄鲁 《微电子学与计算机》2017,(10):119-122
设计了一种高性能无片外电容型LDO线性稳压器.其中,EA采用推挽输出放大器设计,在静态时保持低功耗,瞬态响应时提供大的输出电流,提高LDO的响应速率.高环路增益使LDO电路具有很高的稳压精度;采用零点补偿技术,保证了LDO环路稳定性.LDO采用0.13μm CMOS工艺设计,仿真结果表明,在1.2V^2.0V输入电压下,LDO输出稳定的1.0V电压,输出负载电流为50μA^100mA,最大负载电容可达到100pF,低频PSR为-67.5dB@100mA^-85.5dB@50μA,负载调整率0.8μV/mA,LDO的静态电流为50μA,整体版图面积为0.016 3mm2. 相似文献
6.
本文基于SMIC65 nm工艺,设计了一款快速瞬态响应的无片外电容型低压差线性稳压器(low dropout regulator,LDO).采用高增益跨导结构(OTA)的误差放大器,利用局部共模反馈结构(CFRFC),增加了放大器跨导率,提高了放大器的直流增益.同时,引入一个由电容耦合电流镜构成的瞬态检测电路,取代了传统LDO电路中的大电容,便于检测输出的跳变,增大对功率管的充放电能力,提高了环路瞬态响应速度,降低LDO环路的上/下冲电压.缓冲级采用了带电压负反馈的源级跟随器,在一定的静态功耗下,提高了动态电流,将次级点推到更高的频率,提高了电路相位裕度.仿真结果表明,输入电压为2~3 V时,该电路输出为1.2 V,最大负载电流为100 mA;当负载电流在0~100 mA时,LDO输出的最大过冲电压和欠冲电压为23 mV和27 mV,并且在低频时有较高的电源抑制比. 相似文献
7.
设计了一种采用0.18μm互补金属氧化物半导体(CMOS)工艺制作的三环结构无片外电容数字低压差线性稳压器(LDO)电路,主要在控制方式进行创新,针对不同的输出电压范围采取相应的环路进行调整.电路的功率MOS管阵列按MOS管尺寸,分为大(L)、中(M)、小(S)3组,设计的控制方式使环路可根据负载变化迅速切换,使得电路具有快速的瞬态响应,较强的带负载能力,较低的输出电压纹波和功耗,转换效率最高可达88.9%.在1.8 V输入电压下的后仿真结果表明,负载电流在2~60 mA之间突变时,电路的下冲电压为95 mV,过冲电压为80 mV,恢复时间小于1.7μs,稳态下的输出电压纹波小于2.0 mV,总体静态电流约为43μA.该数字LDO的输入电压范围为1~1.8V,输出电压范围为0.8~1.6 V,内部集成10 pF电容,品质因素FOM仅为0.009 pF. 相似文献
8.
9.
10.
11.
Michael Reilly 《半导体技术》2004,29(12)
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system. 相似文献
12.
Thomas M.Trexler 《半导体技术》2004,29(5)
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test. 相似文献
13.
The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation. 相似文献
14.
The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high. 相似文献
15.
Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible. 相似文献
16.
Qi-jiang Ran Pei-de Han Yu-jun Quan Li-peng Gao Fan-ping Zeng Chun-hua Zhao 《光电子快报》2008,4(4):239-242
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's. 相似文献
17.
Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers
A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it. 相似文献
18.
A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working. 相似文献
19.
It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output(MIMO) communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory. 相似文献
20.
《中国通信》2014,(7)
正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks 相似文献