Densification and biocompatibility of sintering 3.0 mol% yttria-tetragonal ZrO2 polycrystal ceramics with x wt% Fe2O3 and 5.0 wt% mica powders additive

The densification and biocompatibility of sintered 3.0 mol% yttria-tetragonal zirconia polycrystal (3Y-TZP) ceramics, with X wt% Fe₂O₃ and 5.0 wt% mica powders (denoted by 3Y-TZP: X-5.0 wt% mica) have been studied. When the pellets of 3Y-TZP: X-5.0 wt% mica were sintered at 1300 °C for 1 h, the relative shrinkage increases from 19.20–19.43% with the X increased from 0.3 to 1.0. The relative shrinkage of pellets containing 1.0 wt% Fe₂O₃ (X=1.0) increased from 19.43–19.59% when sintering temperatures were raised from 1300 °C to 1450 °C. X-ray diffraction results show that the pellets of 3Y-TZP: X-5.0 wt% mica sintered at 1400 °C for 1 h only contained single phase of tetragonal ZrO₂ (t-ZrO₂). When the sintering temperature was higher than 1400 °C, the Vickers microhardness was greatest in the pellets with X=0.5. Within pellets with the same Fe₂O₃ content, the dominant wavelength (λ_d) was only slightly different for pellets sintered at 1300 °C and those sintered at 1450 °C. The results of the materials were evaluated in vitro cytotoxicity tests reveals that the powders and sintered pellets are safe materials. The oral mucosa irritation tests did not find erythema or histopathological change including normal epithelium, and was free from leucocyte infiltration, vascular congestion and oedema.     

Structure and dielectric properties of perovskite ceramics in the system Ba(Ni1/3Nb2/3)O3–Ba(Zn1/3Nb2/3)O3

Ceramics in the system Ba(Ni_1/3Nb_2/3)O₃–Ba(Zn_1/3Nb_2/3)O₃ (BNN–BZN) were prepared by the mixed oxide route. Powders were mixed and milled, calcined at 1100–1200 °C then pressed and sintered at temperatures in the range 1400–1500 °C for 4 h. Selected samples were annealed or slowly cooled after sintering. Most products were in excess of 96% theoretical density. X-ray diffraction confirmed that all specimens were ordered to some degree and could be indexed to hexagonal geometry. Microstructural analysis confirmed the presence of phases related to Ba₅Nb₄O₁₅ and Ba₈Zn₁Nb₆O₂₄ at the surfaces of the samples. The end members BNN and BZN exhibited good dielectric properties with quality factor (Qf) values in excess of 25,000 and 50,000 GHz, respectively, after rapid cooling at 240 °C h⁻¹. In contrast, mid-range compositions had poor Qf values, less than 10,000 GHz. However, after sintering at 1450 °C for 4 h and annealing at 1300 °C for 72 h, specimens of 0.35(Ba(Ni_1/3Nb_2/3)O₃)–0.65(Ba(Zn_1/3Nb_2/3)O₃) exhibit good dielectric properties: τ_f of +0.6 ppm °C⁻¹, relative permittivity of 35 and quality factor in excess of 25,000 GHz. The improvement in properties after annealing is primarily due to an increase in homogeneity.     

Synthesis and microwave dielectric properties of pseudobrookite-type structure Mg5Nb4O15 ceramics by aqueous sol–gel technique

Pseudobrookite-type Mg₅Nb₄O₁₅ ceramics were prepared by aqueous sol–gel process and microwave dielectric properties were investigated. Highly reactive nanosized Mg₅Nb₄O₁₅ powders were successfully synthesized at 600 °C in oxygen atmosphere with particle sizes of 20–40 nm firstly and then phase evolution was detected by DTA-TG and XRD. Sintering characteristics and microwave dielectric properties of Mg₅Nb₄O₁₅ ceramics were studied at different temperatures ranging from 1200 °C to 1400 °C. With the increase of sintering temperature, density, ?_r and Q·f values increased, and then saturated at 1300 °C. Excellent microwave properties of ?_r ～11.3, Q·f ～43,300 GHz and τ_f ～?58 ppm/°C, were obtained finally. The sintering temperature of Mg₅Nb₄O₁₅ ceramics was significantly reduced by aqueous sol–gel process compared to conventional solid-state methods.     

Microwave dielectric properties and low-temperature sintering of Ba3Ti4Nb4O21 ceramics with B2O3 and CuO additions

The low sintering temperature and the good dielectric properties such as high dielectric constant (ɛ_r), high quality factor (Q × f) and small temperature coefficient of resonant frequency (τ_f) are required for the application of chip passive components in the wireless communication technologies. In the present study, the sintering behaviors and dielectric properties of Ba₃Ti₄Nb₄O₂₁ ceramics were investigated as a function of B₂O₃–CuO content. Ba₃Ti₄Nb₄O₂₁ ceramics with B₂O₃ or CuO addition could be sintered above 1100 °C. However, the additions of both B₂O₃ and CuO successfully reduced the sintering temperature of Ba₃Ti₄Nb₄O₂₁ ceramics from 1350 to 900 °C without detriment to the microwave dielectric properties. From the X-ray diffraction (XRD) studies, the sintering behaviors and the microwave dielectric properties of low-fired Ba₃Ti₄Nb₄O₂₁ ceramics were examined and discussed in the formation of the secondary phases. The Ba₃Ti₄Nb₄O₂₁ sample with 1 wt% B₂O₃ and 3 wt% CuO addition, sintered at 900 °C for 2 h, had the good dielectric properties: ɛ_r = 65, Q × f = 16,000 GHz and τ_f = 101 ppm/°C.     

Synthesis and properties of TiO2 added NiNb2O6 microwave dielectric ceramics using a simple process

TiO₂ added NiNb₂O₆ ceramics produced using a reaction-sintering process were investigated. Pure columbite NiNb₂O₆ could be obtained without TiO₂ addition. With 30 and 40 mol% TiO₂ addition, a phase with the same structure of Ni_0.5Ti_0.5NbO₄ formed. Grain growth is easier in pellets with 30 and 40 mol% TiO₂ addition than in the NiNb₂O₆ pellets. Microwave dielectric properties: ?_r = 20.7, Q × f = 19,800 GHz (at 9 GHz) and τ_f = ?31.9 ppm/°C were obtained for NiNb₂O₆ pellets sintered at 1300 °C/2 h. ?_r around 45, Q × f = 5400–7700 GHz (at 6 GHz) and τ_f ～ 73 ppm/°C were obtained in pellets with 30 mol% TiO₂ addition. ?_r around 50, Q × f = 3800–5700 GHz (at 6 GHz) and τ_f ～ 99 ppm/°C were obtained in pellets with 40 mol% TiO₂ addition.     

High-Q microwave dielectrics in low-temperature sintered (Zn1−xNix)3Nb2O8 ceramics

The effects of Ni substitution for Zn on microwave dielectric properties of (Zn_1−xNi_x)₃Nb₂O₈ (x = 0.02–0.08) ceramics were investigated in this study. The XRD patterns of the sintered samples reveal single-phase formation with a monoclinic structure. The tremendous improvement of Q × f value can be achieved by a small level of Ni substitution (x = 0.05). The τ_f value was found to decrease with a decreasing A-site bond valence. In addition, B₂O₃ and CuO were used as a sintering aid to lower the sintering temperature from 1180 to 900 °C. Excellent microwave dielectric properties (ɛ_r ∼ 20.7, Q × f ∼ 98,000 GHz and τ_f ∼ −85.2 ppm/°C) and a chemical compatibility with Ag electrodes can be obtained for 4 wt% B₂O₃–CuO doped (Zn_0.95Ni_0.05)₃Nb₂O₈ ceramics sintered at 930 °C for 2 h. This constitutes a very promising material for LTCC applications.     

Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Zn1/3Nb2/3)O3 ceramics

The B₂O₃ added Ba(Zn_1/3Nb_2/3)O₃ (BBZN) ceramic was sintered at 900 °C. BaB₄O₇, BaB₂O₄, and BaNb₂O₆ second phases were found in the BBZN ceramic. Since BaB₄O₇ and BaB₂O₄ second phases have an eutectic temperature around 900 °C, they might exist as the liquid phase during sintering at 900 °C and assist the densification of the BZN ceramics. Microwave dielectric properties of dielectric constant (ɛ_r) = 32, Q × f = 3500 GHz, and temperature coefficient of resonance frequency (τ_f) = 20 ppm/°C were obtained for the BZN with 5.0 mol% B₂O₃ sintered at 900 °C for 2 h. The BBZN ceramics were not sintered below 900 °C and the microwave dielectric properties of the BBZN ceramics sintered at 900 °C were very low. However, when CuO was added, BBZN ceramic was well sintered even at 875 °C. The liquid phase related to the BaCu(B₂O₅) second phase could be responsible for the decrease of sintering temperature. Good microwave dielectric properties of ɛ_r = 36, Q × f = 19,000 GHz and τ_f = 21 ppm/°C can be obtained for CuO doped BBZN ceramics sintered at 875 °C for 2 h.     

Effect of BaCu(B2O5) on the sintering and microwave dielectric properties of Ca0.4Li0.3Sm0.05Nd0.25TiO3 ceramics

The sintering behaviors and microwave dielectric properties of the Ca_0.4Li_0.3Sm_0.05Nd_0.25TiO₃ (abbreviated CLSNT) ceramics with different amounts of BaCu(B₂O₅) addition were investigated in this paper. Adding BaCu(B₂O₅) to CLSNT lowered its sintering temperature from 1300 °C to 925 °C. No secondary phase was observed in the CLSNT ceramics and complete solid solution of the complex perovskite phase was confirmed. The CLSNT ceramics with small amounts of BaCu(B₂O₅) addition could be well sintered at 925 °C without much degradation in the microwave dielectric properties. Especially, the 1.75 wt.% BaCu(B₂O₅)-doped CLSNT ceramic sample sintered at 925 °C for 3 h had optimum microwave dielectric properties of ε_r = 93.5 ± 3.2, Q × f = 6486 ± 434 GHz, and τ_f = 5 ± 1.5 ppm/°C (at 3–4 GHz), enabling it a promising candidate material for LTCC applications. Obviously, BaCu(B₂O₅) could be a suitable sintering aid to facilitate the densification and microwave dielectric properties of the CLSNT ceramics.     

Structure and properties of low temperature sintered ZnTa2O6 microwave dielectric ceramics

ZnTa₂O₆ microwave dielectric ceramics have been prepared using ZnTa₂O₆ nano-powders synthesized by sol–gel processing in this study. The crystal structure and microstructure of the ZnTa₂O₆ powders and ceramics were characterized by XRD and SEM techniques. ZnTa₂O₆ ceramics can be densified at a lower sintering temperature of 1200 °C. Microwave dielectric properties show that both of Q × f and ?_r values are lower than those of ceramics prepared by solid state route, and the τ_f values do not show different from that of solid state route. ZnTa₂O₆ ceramics sintered at 1200 °C exhibit good microwave dielectric properties: Q × f = 50,600 GHz, ?_r = 35.12 and τ_f = 9.69 ppm/°C.     

Improvement of the dielectric properties of rutile-doped Al2O3 ceramics by annealing treatment

The microwave dielectric properties of alumina (Al₂O₃) ceramics were studied. The objectives were to improve the large negative temperature coefficient of the resonant frequency (τ_f) of Al₂O₃ ceramics and to obtain a relatively large quality factor (Qf) through the addition of rutile (TiO₂), which has a large positive τ_f, and an annealing treatment. A near-zero τ_f (+1.5 ppm/°C), excellent Qf (148,000 GHz) and ɛ_r (12.4) were obtained in 0.9 Al₂O₃–0.1 TiO₂ ceramics sintered at 1350 °C for 2 h, followed by annealing at 1100 °C for 12 h in air.     

Novel microwave dielectric LTCCs based uponV2O5 doped M2+Cu2Nb2O8 compounds (M2+ = Zn,Co, Ni,Mg and Ca)

The copper-niobates, M²⁺Cu₂Nb₂O₈ (M²⁺ = Zn, Co, Ni, Mg or Ca) have good microwave dielectric properties when sintered between 985–1010 °C and 1110 °C for CaCu₂Nb₂O₈. Therefore, they would be potential dielectric LTCC materials if they could be made to sinter below 960 °C (melting point of silver). To this end, additions of 3 wt.% V₂O₅ were made to ZnCu₂Nb₂O₈, CoCu₂Nb₂O₈, NiCu₂Nb₂O₈, MgCu₂Nb₂O₈ and CaCu₂Nb₂O₈, and their sintering and dielectric behaviour was investigated for samples fired between 800 and 950 °C. Doping lowered sintering temperatures to below the 960 °C limit in all cases. Doping had the general effect of reducing ɛ_r, density, Qf and τ_f, although doped CaCu₂Nb₂O₈ had a Qf value of 9300 GHz, nearly four times that of the best undoped sample. Doped ZnCu₂Nb₂O₈ fired to 935 °C had Qf = 10,200 GHz, and for doped CoCu₂Nb₂O₈ fired to 885 °C Qf = 7500 GHz. When doped and undoped samples all fired to 935 °C were compared, all doped samples had greater ɛ_r and density, and all except ZnCu₂Nb₂O₈ had a smaller τ_f. All doped samples had a more linear relationship between frequency and temperature in the range 250–300 K.     

Microwave dielectric properties and microstructures of Nb2O5-Zn0.95Mg0.05TiO3 + 0.25TiO2 ceramics with Bi2O3 addition

The effects of Bi₂O₃ addition on the microwave dielectric properties and the microstructures of Nb₂O₅-Zn_0.95Mg_0.05TiO₃ + 0.25TiO₂ (Nb-ZMT′) ceramics prepared by conventional solid-state routes have been investigated. The results of X-ray diffraction (XRD) indicate the presence of four crystalline phases, ZnTiO₃, TiO₂, Bi₂Ti₂O₇, and (Bi_1.5Zn_0.5)(Ti_1.5Nb_0.5)O₇ in the sintered ceramics, depending upon the amount of Bi₂O₃ addition. In addition, in order to confirm the existence of (Bi_1.5Zn_0.5)(Ti_1.5Nb_0.5)O₇ phase in the samples, the microstructure of Nb-ZMT′ ceramic with 5 wt.% B₂O₃ addition was analyzed by using a transmission electron micrograph. The dielectric constant of Nb-ZMT′ samples was higher than ZMT′ ceramics. The Nb-ZMT′ ceramic with 5 wt.% Bi₂O₃ addition exhibits the optimum dielectric properties: Q × f = 12,000 GHz, ?_r = 30, and τ_f = ?12 ppm/°C. Unlike the ZMT′ ceramic sintered at 900 °C, the Nb-ZMT′ ceramics show higher Q value and dielectric constant. Moreover, there is no Zn₂TiO₄ existence at 960 °C sintering. To understand the co-sinterability between silver electrodes and the Nb-ZMT′ dielectrics, the multilayer samples are prepared by multilayer thick film processing. The co-sinterability (900 °C) between silver electrode and Nb-ZMT′ dielectric are well compatible, because there are no cracks, delaminations, and deformations in multilayer specimens.     

High piezoelectricity in CuO-modified Ba(Ti0.90Sn0.10)O3 lead-free ceramics with modulated phase structure

High piezoelectricity was achieved in Ba(Ti_0.90Sn_0.10)O₃ lead-free ceramics by optimizing CuO addition and sintering temperature. The phase structure of 1.0 mol% CuO-doped Ba(Ti_0.90Sn_0.10)O₃ ceramic is coexisting rhombohedral and tetragonal phases as sintered at 1300 °C. The coexistence of rhombohedral, tetragonal and orthorhombic phases appears in 1.0 mol% CuO-doped Ba(Ti_0.90Sn_0.10)O₃ ceramics as sintered at 1350–1450 °C, which leads to highly enhanced d₃₃ up to 650pC/N. This work demonstrates that high piezoelectric property (d₃₃ = 650pC/N) can be obtained in BaTiO₃-based lead-free piezoceramics with a simple composition modification by modulating phase structures, which also indicates that Ba(Ti,Sn)O₃ is a promising candidate to replace the lead-based piezoceramics.     

Li2O excess (Na0.51K0.47Li0.02)(Nb0.8Ta0.2)O3 lead free piezoelectric ceramics

1 mol% Li₂O excess (Na_0.51K_0.47Li_0.02)(Nb_0.8Ta_0.2)O₃ ceramics were prepared by the conventional mixed oxide method and sintered from 950 to 1200 °C. Also, Li₂O was employed as a sintering aid for high densification and low temperature sintering process. X-ray diffraction results of 1 mol% Li₂O excess (Na_0.51K_0.47Li_0.02)(Nb_0.8Ta_0.2)O₃ lead free piezoelectric ceramics indicated that the specimens were well crystallized and have tetragonal structure. The specimens which sintered at 1050 °C showed the highest piezoelectric properties compared with others. The measured piezoelectric constant and electromechanical coupling coefficient were 231 pC/N and 38.9%, respectively. Curie temperature of (Na_0.51K_0.47Li_0.02)(Nb_0.8Ta_0.2)O₃ ceramics was 344.32, 344.4 and 344.5 °C at 1, 10 and 100 kHz, respectively.     

Microwave dielectric properties of Re3Ga5O12 (Re: Nd,Sm, Eu,Dy and Yb) ceramics and effect of TiO2 on the microwave dielectric properties of Sm3Ga5O12 ceramics

Re₃Ga₅O₁₂ (Re: Nd, Sm, Eu, Dy and Yb) garnet ceramics sintered at 1350–1500 °C had a high quality factor (Q × f) ranging from 40,000 to 192,173 GHz and a low dielectric constant (ɛ_r) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τ_f) in the range of −33.7 to −12.4 ppm/°C. In order to tailor the τ_f value, TiO₂ was added to the Sm₃Ga₅O₁₂ ceramics, which exhibited good microwave dielectric properties. The relative density and grain size increased with addition of TiO₂, resulting in the enhancement of Q × f value. The τ_f increased with the addition of TiO₂. Excellent microwave dielectric properties of ɛ_r = 12.4, Q × f = 240,000 GHz and τ_f = −16.1 ppm/°C were obtained from the Sm₃Ga₅O₁₂ ceramics sintered at 1450 °C for 6 h with 1.0 mol% TiO₂. Therefore, Re₃Ga₅O₁₂ ceramics, especially TiO₂-added Sm₃Ga₅O₁₂ ceramics are good candidates for advanced substrate materials in microwave integrated circuits (MICs) applications.     

Low-temperature synthesis and microwave dielectric properties of trirutile-structure MgTa2O6 ceramics by aqueous sol–gel process

Trirutile-structure MgTa₂O₆ ceramics were prepared by aqueous sol–gel method and microwave dielectric properties were investigated. Highly reactive nanosized MgTa₂O₆ powders were successfully synthesized at 500 °C in oxygen atmosphere with particle sizes of 20–40 nm. The evolution of phase formation was detected by DTA–TG and XRD. Sintering characteristic and microwave dielectric properties of MgTa₂O₆ ceramics were studied at different temperatures ranging from 1100 to 1300 °C. With the increase of sintering temperature, density, ?_r and Q · f values increased and saturated at 1200 °C with excellent microwave properties of ?_r ～ 30.1, Q · f ～ 57,300 GHz and τ_f ～ 29 ppm/°C. The sintering temperature of MgTa₂O₆ ceramics was significantly reduced by aqueous sol–gel process compared to conventional solid-state method.     

Structure and dielectric properties of novel low temperature co-fired Bi2O3-RE2O3-MoO3 (RE=Pr,Nd, Sm,and Yb) based microwave ceramics

Novel monoclinic Bi₂O₃-xRE₂O₃-yMoO₃ (RE=Pr, Nd, Sm, and Yb) based low temperature co-fired ceramics (LTCC) systems with high sintering density and low microwave dielectric loss are synthesized by conventional solid state reaction technique. The structure and dielectric properties of Bi₂O₃-xRE₂O₃-yMoO₃ ceramics are investigated. Dense BiNdMoO₆ ceramics sintered at 900 °C for 8 h in air have a low dielectric constant ε_r=~7.5, a high quality factor Q×f=~ 24, 800 GHz at 7.0 GHz, and τ_f=~−16 ppm/̊C. Especially, good chemical compatibility of BiNdMoO₆ with Ag electrodes is represented as well. In contrast, BiSmMoO₆ ceramics sintered at 1000 °C for 8 h show enhanced Q×f=~43, 700 GHz at 7.8 GHz with ε_r=~8.5 and τ_f=~−27 ppm/°C. Bi₂O₃-xRE₂O₃-yMoO₃ (RE=Pr, Nd, Sm, and Yb) based ceramics could be considered as promising microwave ceramics for LTCC applications.     

Crystal structure and microwave dielectric properties of Zn0.9Ti0.8−xSnxNb2.2O8 ceramics

The crystal structure and microwave dielectric properties of Zn_0.9Ti_0.8?xSn_xNb_2.2O₈ (x = 0.00, 0.05, 0.10, 0.15) ceramics sintered at temperatures ranging from 1100 °C to 1140 °C for 6 h were investigated. A single phase with ixiolite structure was obtained. With the increase of Sn content, the dielectric constant decreased attributed to the decrease of dielectric polarizability. The Qf value decreased with the decrease of packing fraction and grain size. The temperature coefficient of resonant frequency (τ_f) increased due to the increase of the bond valence of Zn_0.9Ti_0.8?xSn_xNb_2.2O₈ ceramics. The excellent microwave dielectric properties of ? = 35.05, Qf = 49,100 GHz, τ_f = ?27.6 × 10^?6/°C were obtained for Zn_0.9Ti_0.8?xSn_xNb_2.2O₈ (x = 0.05) specimens sintered at 1120 °C for 6 h.     

Influence of TiO2 additive on sintering temperature and microwave dielectric properties of Mg0.90Ni0.1SiO3 ceramics

(1-x)Mg_0.90Ni_0.1SiO₃-xTiO₂ (x = 0, 0.01, 0.03, 0.05) ceramics were successfully formed by the conventional solid-state methods and characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS), and their microstructure and microwave dielectric properties systematically investigated. It was observed that when TiO₂ content increased from 0 to 5 wt%, the Q_uf_o of the sample decreased from 118,702 GHz to 101,307 GHz and increases the τ_f value from −10 ppm/°C to +3.14 ppm/°C accompanied by a notable lowering in the sintering temperature (125 °C). A good combination of microwave dielectric properties (ε_r ∼ 8.29, Q_uf_o ∼ 101,307 GHz and τ_f ∼ −2.98 ppm/°C) were achieved for Mg_0.90Ni_0.1SiO₃ containing 3 wt% of TiO₂ sintered at 1300 °C for 9 h which make this material of possible interest for millimeter wave applications.     

Effects of sintering parameters and Nd doping on the microwave dielectric properties of Y2O3 ceramics

Y₂O₃ ceramics with good dielectric properties were prepared via co-precipitation reaction and subsequent sintering in a muffle furnace. The effects of Nd doping and sintering temperature on microwave dielectric properties were studied. With the increase in sintering temperature, the density, quality factor (Q×f), and dielectric constant (ε_r) values of pure Y₂O₃ ceramics increased to the maximum and then gradually decreased. The Y₂O₃ ceramics sintered at 1500 °C for 4 h showed optimal dielectric properties: ε_r=10.76, Q×f=82, 188 GHz, and τ_f=−54.4 ppm/°C. With the addition of Nd dopant, the Q×f values, ε_r, and τ_f of the Nd: Y₂O₃ ceramics apparently increased, but excessive amount degraded the quality factor. The Y₂O₃ ceramics with 2 at% Nd₂O₃ sintered at 1460 °C displayed good microwave dielectric properties: ε_r=10.4, Q×f=94, 149 GHz and τ_f=−46.2 ppm/°C.