准谐振正激变换器零电压开关设计

准谐振有源箝位正激变换器的有源箝位电路与常规的有源箝位正激变换器的结构类似,但实际工作过程存在许多差异。通过分析准谐振有源箝位正激变换器的工作过程,研究了准谐振有源箝位正激变换器的开关管零电压导通的边界条件,并进行了仿真和实验验证。     

采用磁集成技术的有源箝位正激变换器设计

针对3.3 V/10 A低压大电流输出、高功率密度电源模块的设计要求,结合有源箝位正激拓扑理论和磁集成技术,提出采用磁集成技术的有源箝位正激变换器;对变换器中的主变压器和输出电感进行集成,得到高效率、高功率密度的有源箝位正激变换器。     

基于LM5025的有源箝位反激变换器的前馈控制

在有源箝位反激变换器负载基本恒定的情况下采用前馈控制既可以减小变换器体积,又可降低变换器的成本。文中在分析有源箝位反激变换器工作原理的基础上,结合LM5025器件的前馈控制特性,深入研究了基于LM5025的有源箝位反激变换器前馈控制的实现方案,设计了前馈控制电路的参数,完成了有源前馈反激变换器电路设计。在此基础上进行了实验研究,实验结果证明了有源箝位反激变换器前馈控制的有效性和实用性。     

峰值电流控制的磁集成有源箝位正激变换器的小信号模型

文章对采用峰值电流控制的磁集成有源箝位正激变换器进行了小信号分析。建立的模型不但包括复位电路和斜坡补偿电路部分,还包括集成磁件部分。最后给出了补偿器设计原则,完成了闭环设计。     

具有非线性电压转换有源箝位正激变换器

本文研究一种具有非线性电压转换的正激变换器,通过在有源箝位正激变换器的变压器二次侧增加一个续流二极管和一个输出滤波电感得到。该变换器保留了有源箝位正激变换器的优点,同时,具有更高的占空比利用率,使得其具有宽输入电压适应范围,软开关的实现和二极管电压电流应力的减小,使其功率转换效率进一步提高。研制了一台50~100V输入, 12V输出的原理样机,实验结果验证了理论分析的正确性以及该技术的可行性。     

非理想条件下有源箝位正激电路小信号模型分析

有源箝位正激变换器相对于其它复位方式,有很多优点,然而当输入源和负载发生变化时,却造成系统的不稳定性。文中分析了有源箝位正激变换器中复位电容对其小信号特性的影响,在考虑原边主管导通电阻的基础上,应用状态空间平均法,首次推导其小信号模型,并运用Mathcad仿真了该模型的频率特性,结合控制理论根之和的概念,分析了非理想条件下的有源箝位正激电路的小信号模型。     

一种同步整流有源箝位正激变换器的研究

提出一种同步整流有源箝位正激变换器。该变换器是在传统的同步整流有源箝位正激变换器的原边增加一个由箝位电容和电感构成的辅助网络得到。该辅助网络可以使变换器在全负载范围内更容易实现主开关管和辅助开关管的ZVS(Zero-Voltage Switching),副边采用自激式同步整流技术,能进一步提升变换器效率,适用于低压、大电流输出场合。详细分析了变换器的工作原理,搭建了一台8 V/100 W试验样机证明了理论分析的正确性。     

交错并联有源籍位ZVS-PWM正激变换器的分析与设计

提出一种交错并联有源箝位ZVS-PWM正激变换器,它的最大优点是负载从零变化到最大时开关管的损耗非常小.这种变换器是由两个有源箝位正激变换器共同耦合一个高频变压器构成的,适用于大输入电压、大功率的变换器.分析其工作原理并用一台功率为3 kW的原理样机进行实验验证.     

一种实时自适应前沿消隐电路

基于正激变换器结构,设计了一种实时自适应前沿消隐电路。通过振荡时间消隐和振荡幅度消隐,对最优消隐时间进行追踪,实现实时自适应的前沿消隐,在保证消隐可靠性的基础上降低了系统体积与成本,并确保不限制电路高频化发展。设计的前沿消隐电路能获得消除尖峰振荡的输出电流信息,保证系统能对输出负载变化做出快速响应。基于0.18μm BCD工艺,对电路进行设计。仿真结果表明,该电路在没有其它额外限流功能条件下,启动过冲电压只有50 mV,负载切换时的下掉电压与过冲电压分别为519 mV和578 mV。     

有源箝位正激变换器的机理研究及优势

有源箝位正激变换器有很多优点,现在正得到广泛应用。本文介绍了有源箝位技术的工作原理与主要参数的设计方法,以及应用于正激变换器中的优势。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.