用于Buck变换器的开关电流型误差放大器

提出了一种用于Buck变换器的开关电流型误差放大器(SC-EA)。在Buck结构中,无需片外补偿即可使系统保持稳定,节省了芯片面积,功率密度更高。误差放大器的带宽随开关频率改变而自适应变化,在高频时仍具有较好稳定性和瞬态响应速度。使用开关电流型误差放大器的谷值电流模COT结构实现了片上频率补偿,省掉了片外元件,可实现多路并联均流,具有较快的瞬态响应速度。采用0.18 μm BCD工艺进行了电路设计。仿真结果表明,在6 MHz、1 MHz开关频率下,选用10 μF、70 μF输出电容即可达到环路稳定,实现自适应带宽。在6 MHz开关频率下,上、下阶跃瞬态响应时间分别为6.3 μs、5.5 μs;在1 MHz开关频率下,上、下阶跃瞬态响应时间分别为27.7 μs、28.4 μs。     

基于耦合电感的四相交错Buck变换器研究

基于耦合电感的四相交错Buck变换器是由4个同步Buck变换器通过磁耦合技术并联组成。在分析其工作原理、软开关条件以及设计耦合电感的基础上,以TMS320F28035作为控制核心,搭建了一台16 kW的实验样机。实验结果表明,该变换器在移相（PS）PWM控制策略下,开关管电流应力小,电流纹波明显减小,可在全负载范围内实现零电压开关（ZVS）,适用于低压大电流、大功率应用场合。     

一种带补偿的电流采样电路

采用0.35 μm CMOS工艺,设计了一种电流采样电路。分析了传统senseFET电流采样电路中采样速度与采样范围之间的制约关系。提出了一种带有采样电流补偿的电流采样电路,通过注入补偿电流,加快了采样电路环路响应速度,同时拓展了电流采样下限。该电流采样电路被用于10 MHz开关频率的电流模Buck变换器中。仿真结果显示,所提出的电流采样电路在全负载范围内实现了精确快速的电感电流采样功能。     

基于多频脉冲序列控制Buck变换器的研究

针对开关变换器双频率控制技术存在的输出电压纹波大、输出功率范围窄等缺点,研究电压型多频率脉冲序列控制方法,该方法通过四组预设控制脉冲,实现开关变换器输出电压的调节。对多脉冲序列控制Buck变换器在电感电流连续导电模式（Continuous Conduction Mode,CCM）和电感电流断续导电模式（Discontinuous Conduction Mode,DCM）下的工作特性进行分析,重点研究了在DCM 模式下Buck变换器多频率控制。最后,分析了DCM Buck变换器工作在稳态时脉冲序列的组合方式,并通过实验验证了理论分析的正确性。     

一种新型基于二次型Buck变换器的交错并联LED驱动电源

为了减小输出电流纹波,提出了一种基于二次型Buck变换器的交错并联LED驱动电源。主电路由一个二次型Buck变换器和一条新增支路构成,这条新增支路包括一个开关管、二极管、电感和电容,优化了原有的拓扑结构,实现了高功率因数和恒流输出。采用交错并联技术,有效减小了滤波电感和输出电流纹波,纹波大小仅为输出电流峰峰值的0.18%。最后通过实验样机详细验证了理论分析的正确性。     

一种采用SCOVP技术的高频率稳定度Buck变换器

提出了一种采用单周期输出电压预测(SCOVP)技术的自适应导通时间(AOT)控制Buck变换器。该变换器可以在输入输出电压及负载变化时实现频率恒定,并可设置外部电阻使Buck变换器准确工作在高开关频率下。首先分析了传统AOT控制Buck变换器的开关频率产生漂移的原因,并提出了一种采用SCOVP技术的单脉冲计时器(OST)电路。其次通过单周期占空比预测输出电压信息,并根据预测的输出电压和负载电流补偿T_ON时间,实现了Buck的频率稳定。该变换器采用0.18μm BCD工艺进行电路设计。仿真结果表明,在2 MHz开关频率下,负载电流从1 A到5 A变化时,Buck变换器的最大频率变化Δf_SW仅13 kHz,负载平均频率变化Δf_SW/ΔILoad为3.24 kHz/A。同时,变换器频率设置准确度从88%提升到99.35%。     

一种用于同步Buck变换器的自适应反流检测电路

提出了一种用于同步整流Buck电路的自适应反流检测(AZCD)电路,能够有效限制Buck变换器在DCM模式下出现电感电流的倒灌现象,以实现低EMI和高能效。与传统反流检测电路不同,该电路能够在Buck变换器输出电压变化的情况下保证功率下管的关断准确性。在0.35 μm BCD工艺下,对该电路进行仿真验证。结果表明,在1 MHz开关频率、输出电压从1.5 V变化到3.5 V的情况下,Buck变换器中功率下管的关断误差可以控制在1 ns以内。此外,在负载电流从12.5 mA变化到50 mA的情况下,该AZCD电路可以使Buck变换器效率提升约1%。     

一种快速瞬态响应Buck变换器设计

提出了一种基于锁相环锁频锁相ACOT控制模式的Buck变换器。该变换器具有快速瞬态响应的特点。分析发现,在负载阶跃时,传统ACOT控制模式Buck变换器受到最小关断时间和锁相环速度的限制,不能完全发挥其瞬态响应快的优势。设计了一种根据设定的开关频率可自适应调节环路参数的Buck变换器,它在较宽的开关频率下具有快速的瞬态响应特性。采用0.18 μm BCD工艺对提出的Buck变换器进行仿真验证。结果表明,负载电流从1 A跳变到5 A时,输出电压下冲恢复时间减小为1.68 μs。     

一种宽电压范围的DCR电流采样电路

基于0.35μm BCD工艺,设计了一款面向宽输出电压范围Buck变换器的DCR电流采样电路。内含电平位移电路与浮动电压产生电路,可以在宽电压范围内正常工作,满足启动、短路保护、高占空比等多种工作条件下的电流采样。仿真结果显示,所提出的DCR电流采样电路应用于输出电压为2.5～24V、开关频率为100k Hz～1MHz的Buck变换器中时,DCR电流采样电路的增益为15.4d B,-3 d B带宽为9.35 MHz,输入电压范围为0～24 V,实现了精准稳定的电感电流采样功能。     

一种用于RF供电的混合结构DC-DC变换器

设计了一种基于0.13 μm CMOS工艺的混合结构DC-DC变换器。该变换器由Buck变换器和LDO串联组成。Buck变换器输出电压可根据LDO负载电流进行调节,能有效减小LDO损耗。在负载电流为20 mA时,可将整个变换器的效率提高10.5%。LDO采用片外电容补偿。高带宽误差放大器使LDO在DC~20 MHz范围内具有较高的电源抑制比。LDO对Buck变换器开关频率处的噪声抑制达-62 dB。整个电源具有较低的输出噪声,适于为RF电路供电。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.