Reversible bistable switching in nanoscale thiol-substituted oligoaniline molecular junctions

Single molecular monolayers of oligoaniline dimers were integrated into sub-40-nm-diameter metal nanowires to form in-wire molecular junctions. These junctions exhibited reproducible room temperature bistable switching with zero-bias high- to low-current state conductance ratios of up to 50, switching threshold voltages of approximately +/-1.5 V, and no measurable decay in the high-state current over 22 h. Such switching was not observed in similarly fabricated saturated dodecane (C12) or conjugated oligo(phenylene ethynylene) (OPE) molecular junctions. The low- and high-state current versus voltage was independent of temperature (10-300 K), suggesting that the dominant transport mechanism in these junctions is coherent tunneling. Inelastic electron tunneling spectra collected at 10 K show a change in the vibrational modes of the oligoaniline dimers when the junctions are switched from the low- to the high-current state. The results of these measurements suggest that the switching behavior is an inherent molecular feature that can be attributed to the oligoaniline dimer molecules that form the junction.     

Effects of hydration on molecular junction transport

The study of charge transport through increasingly complex small molecules will benefit from a detailed understanding of how contaminants from the environment affect molecular conduction. This should provide a clearer picture of the electronic characteristics of molecules by eliminating interference from adsorbed species. Here we use magnetically assembled microsphere junctions incorporating thiol monolayers to provide insight into changing electron transport characteristics resulting from exposure to air. Using this technique, current-voltage analysis and inelastic electron tunnelling spectroscopy (IETS) demonstrate that the primary interaction affecting molecular conduction is rapid hydration at the gold-sulphur contacts. We use IETS to present evidence for changing mechanisms of charge transport as a result of this interaction. The detrimental effects on molecular conduction discussed here are important for understanding electron transport through gold-thiol molecular junctions once exposed to atmospheric conditions.     

Molecular transport junctions: Propensity rules for inelastic electron tunneling spectra

We develop a series of propensity rules for interpreting inelastic electron tunneling (IET) spectra of single-molecule transport junctions. IETS has no selection rules, such as those seen in optical, infrared, and Raman spectra, because IETS features arise not from the field-dipole interaction characterizing these other spectroscopies but from vibronic modification of the electronic levels. Expansion of the Landauer-Imry formula in Taylor series in molecular normal coordinates gives a convenient, accurate perturbation-type formula for calculating both frequency and intensity of the IETS spectrum. Expansion in a Dyson-like form permits derivation of propensity rules, both symmetry-based and pathway-deduced, allowing correlation of structure and coupling geometry with the IETS spectrum. These propensity rules work very well for the calculated spectrum of five typical molecular bridges.     

Structural contributions to charge transport across Ni-octanedithiol multilayer junctions

We report the fabrication and characterization of multilayer thin films incorporating 1,8-octanedithiols and Ni atoms. Low-temperature charge transport measurements exhibit inelastic co-tunneling and resonant tunneling features that correspond energetically to vibrational excitations of the molecular multilayer. Several junctions exhibit changes in conductance features characteristic of charge defect-gating. Transport through our junctions is shown to be dominated by the intrinsic properties of the multilayer.     

Inelastic transport through molecules: comparing first-principles calculations to experiments

We present calculations of the elastic and inelastic conductance through three different hydrocarbon molecules connected to gold electrodes. Our method is based on a combination of the nonequilibrium Green's function method with density functional theory. Vibrational effects in these molecular junctions were previously investigated experimentally by Kushmerick et al. (Nano Lett. 2004, 4, 639). Our results are in good agreement with the measurements and provide insights into (i) which vibrational modes are responsible for inelastic scattering, (ii) the width of the inelastic electron tunneling signals, and (iii) the mechanisms of heating and cooling of the vibrational modes induced by the coupling to the charge carriers.     

Molecular Signatures in the Transport Properties of Molecular Wire Junctions: What Makes a Junction “Molecular”?

The simplest component of molecular electronics consists of a single-molecule transport junction: a molecule sandwiched between source and drain electrodes, with or without a third gate electrode. In this Concept article, we focus on how molecules control transport in metal-electrode molecular junctions, and where the molecular signatures are to be found. In the situation where the molecule is relatively short and the gap between injection energy and molecular eigenstates is large, transport occurs largely by elastic tunneling, stochastic switching is common, and the vibronic signature can be found using inelastic electron tunneling spectroscopy (IETS). As the energy gaps for injection become smaller, one begins to see stronger molecular signatures - these include Franck-Condon-like structures in the current/voltage characteristic and strong vibronic interactions, which can lead to hopping behavior at the polaron limit. Conformational changes induced by the strong electric field lead to another strong manifestation of the molecular nature of the junction. We overview some of this mechanistic landscape, focusing on significant effects of switching (both stochastic and controlled by the electric field) and of molecular vibronic coupling.     

Chasing the “Killer” Phonon Mode for the Rational Design of Low‐Disorder,High‐Mobility Molecular Semiconductors

Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron–phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high‐mobility molecular semiconductors, state‐of‐the‐art quantum mechanical simulations of the vibrational modes and the ensuing electron–phonon coupling constants are combined with experimental measurements of the low‐frequency vibrations using inelastic neutron scattering and terahertz time‐domain spectroscopy. In this way, the long‐axis sliding motion is identified as a “killer” phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high‐mobility molecular semiconductors is suggested.     

Probing the chemistry of molecular heterojunctions using thermoelectricity

Thermopower measurements offer an alternative transport measurement that can characterize the dominant transport orbital and is independent of the number of molecules in the junction. This method is now used to explore the effect of chemical structure on the electronic structure and charge transport. We interrogate junctions, using a modified scanning tunneling microscope break junction technique, where: (i) the 1,4-benzenedithiol (BDT) molecule has been modified by the addition of electron-withdrawing or -donating groups such as fluorine, chlorine, and methyl on the benzene ring; and (ii) the thiol end groups on BDT have been replaced by the cyanide end groups. Cyanide end groups were found to radically change transport relative to BDT such that transport is dominated by the lowest unoccupied molecular orbital in 1,4-benzenedicyanide, while substituents on BDT generated small and predictable changes in transmission.     

The influence of thermal fluctuations on the electronic transport of alkeno-thiolates

In this paper, we investigate the influence of molecular vibrations on the tunneling of electrons through alkeno-thiolates of varying lengths sandwiched in between two gold contacts. The study is confined to the elastic scattering. The vibrational modes are treated quantum-mechanically and the tunneling current is computed as an ensemble average over the distribution of the atomic configurations, obtained by a suitable approximation of the density matrix for the normal mode oscillators. The quantum-mechanical treatment is necessary in order to correctly include the zero-point fluctuations. The calculations show no temperature dependence for the tunneling current in the regime between 270-350 K.     

First-principles simulations of inelastic electron tunneling spectroscopy of molecular electronic devices

Inelastic electron tunneling spectroscopy (IETS) is a powerful experimental tool for studying the molecular and metal contact geometries in molecular electronic devices. A first-principles computational method based on the hybrid density functional theory is developed to simulate the IETS of realistic molecular electronic devices. The calculated spectra of a real device with an octanedithiolate embedded between two gold contacts are in excellent agreement with recent experimental results. Strong temperature dependence of the experimental IETS spectra is also reproduced. It is shown that the IETS is extremely sensitive to the intramolecular conformation and the molecule-metal contact geometry changes. With the help of theoretical calculations, it has finally become possible to fully understand and assign the complicated experimental IETS and, more importantly, provide the structural information of the molecular electronic devices.     

Transition voltage spectroscopy and the nature of vacuum tunneling

Transition voltage spectroscopy (TVS) has been proposed as a tool to analyze charge transport through molecular junctions. We extend TVS to Au-vacuum-Au junctions and study the distance dependence of the transition voltage V(t)(d) for clean electrodes in cryogenic vacuum. On the one hand, this allows us to provide an important reference for V(t)(d) measurements on molecular junctions. On the other hand, we show that TVS forms a simple and powerful test for vacuum tunneling models.     

Creation of stable molecular junctions with a custom-designed scanning tunneling microscope

The scanning tunneling microscope break junction (STMBJ) technique is a powerful approach for creating single-molecule junctions and studying electrical transport in them. However, junctions created using the STMBJ technique are usually mechanically stable for relatively short times (<1?s), impeding detailed studies of their charge transport characteristics. Here, we report a custom-designed scanning tunneling microscope that enables the creation of metal-single molecule-metal junctions that are mechanically stable for more than 1?minute at room temperature. This stability is achieved by a design that minimizes thermal drift as well as the effect of environmental perturbations. The utility of this instrument is demonstrated by performing transition voltage spectroscopy-at the single-molecule level-on Au-hexanedithiol-Au, Au-octanedithiol-Au and Au-decanedithiol-Au junctions.     

Nanoparticle Linker‐Controlled Molecular Wire Devices Based on Double Molecular Monolayers

Highly conductive molecular wires are an important component for realizing molecular electronic devices and have to be explored in terms of interactions between molecules and electrodes in their molecular junctions. Here, new molecular wire junctions are reported to enhance charge transport through gold nanoparticle (AuNP)‐linked double self‐assembled monolayers (SAMs) of cobalt (II) bis‐terpyridine molecules (e.g., Co(II)(tpyphS)₂). Electrical characteristics of the double‐SAM devices are explored in terms of the existence of AuNP. The AuNP linker in the Co(II)(tpyphS)₂–AuNP–Co(II)(tpyphS)₂ junction acts as an electronic contact that is transparent to electrons. The weak temperature dependency of the AuNP‐linked molecular junctions strongly indicates sequential tunneling conduction through the highest occupied molecular orbitals (HOMOs) of Co(II)(tpyphS)₂ molecules. The electrochemical characteristics of the AuNP–Co(II)(tpyphS)₂ SAMs reveal fast electron transfer through molecules linked by AuNP. Density functional theory calculations reveal that the molecular HOMO levels are dominantly affected by the formation of junctions. The intermolecular charge transport, controlled by the AuNP linker, can provide a rational design for molecular connection that achieves a reliable electrical connectivity of molecular electronic components for construction of molecular electronic circuits.     

Sensitizers in inelastic electron tunneling spectroscopy: a first-principles study of functional aromatics on Cu(111)

Low sensitivity is a key problem in inelastic electron tunneling spectroscopy (IETS) with the scanning tunneling microscope. Using first-principles simulations, we predict different means to tune the IETS sensitivity of symmetrical functional aromatics on a Cu(111) surface. We show how the IET-spectra of phenyl-NO? compounds can be greatly enhanced as compared to pristine phenyl. More precisely, the NO? substituent qualifies as a sensitizer of low-frequency wagging modes, but also as a quencher of high-frequency stretching modes. At variance, the CO? substituent is found to suppress the whole IET-activity. The head-up (non-anchoring) and head-down (anchoring) configurations of the functional group lead to minor changes in the signals, nevertheless allowing access to discriminate configurational features. It is shown how to disentangle the electronic and steric effects of the substituent in the STM junction.     

Spin-Polarized Transport and Dynamics in Magnetic Tunneling Structures

In the first part of this paper, we report a systematic study on the structural evolution under rapid thermal annealing and the corresponding transport properties in magnetic tunnel junctions (MTJs) with a crystalline MgO barrier. The results clearly indicate that high tunneling magnetic resistance can be achieved by annealing MTJs at a very short time, and it is directly related to the formation of (001) crystalline structures. In the second part, we report the spin dynamics in tunneling structure through direct electrical detection. A surprisingly large voltage generation in F/I/N and F/I/F junctions was observed, which is contradictory to the prediction from the standard spin-pumping theory. We proposed a theoretical formalism to study spin-pumping effects in ferromagnetic multilayer structures. The formalism can yield a remarkably clean physical picture of the spin and charge pumping in tunneling structures. The calculated values are consistent with experimental results.     

Real-space imaging of inelastic Friedel-like surface oscillations emerging from molecular adsorbates

We report real space imaging measurements of inelastic Friedel oscillations. The inelastic electron tunneling spectroscopy, using scanning tunneling microscopy, around dimers of dichlorobenze adsorbates on Au(111) surface display clear spatial modulations that we attribute to inelastic scattering at the molecular sites caused by molecular vibrations. Due to local interactions between the adsorbate and the surface states, the molecular vibrations generate a redistribution of the charge density at energies in a narrow range around the inelastic mode. Our experimental findings are supported by theoretical arguments.     

Graphene as a tunnel barrier: graphene-based magnetic tunnel junctions

Graphene has been widely studied for its high in-plane charge carrier mobility and long spin diffusion lengths. In contrast, the out-of-plane charge and spin transport behavior of this atomically thin material have not been well addressed. We show here that while graphene exhibits metallic conductivity in-plane, it serves effectively as an insulator for transport perpendicular to the plane. We report fabrication of tunnel junctions using single-layer graphene between two ferromagnetic metal layers in a fully scalable photolithographic process. The transport occurs by quantum tunneling perpendicular to the graphene plane and preserves a net spin polarization of the current from the contact so that the structures exhibit tunneling magnetoresistance to 425 K. These results demonstrate that graphene can function as an effective tunnel barrier for both charge and spin-based devices and enable realization of more complex graphene-based devices for highly functional nanoscale circuits, such as tunnel transistors, nonvolatile magnetic memory, and reprogrammable spin logic.     

Few-Hundred GHz Carbon Nanotube Nanoelectromechanical Systems (NEMS)

We study 23-30 nm long suspended single-wall carbon nanotube quantum dots and observe both their stretching and bending vibrational modes. We use low-temperature DC electron transport to excite and measure the tubes' bending mode by making use of a positive feedback mechanism between their vibrations and the tunneling electrons. In these nanoelectromechanical systems (NEMS), we measure fundamental bending frequencies f(bend) ≈ 75-280 GHz and extract quality factors Q ～ 10(6). The NEMS's frequencies can be tuned by a factor of 2 with tension induced by mechanical breakjunctions actuated by an electrostatic force or tension from bent suspended electrodes.     

Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions

We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H₂BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes.     

Fabrication of Reproducible,Integration‐Compatible Hybrid Molecular/Si Electronics

Reproducible molecular junctions can be integrated within standard CMOS technology. Metal–molecule–semiconductor junctions are fabricated by direct Si–C binding of hexadecane or methyl‐styrene onto oxide‐free H‐Si(111) surfaces, with the lateral size of the junctions defined by an etched SiO₂ well and with evaporated Pb as the top contact. The current density, J, is highly reproducible with a standard deviation in log(J) of 0.2 over a junction diameter change from 3 to 100 μm. Reproducibility over such a large range indicates that transport is truly across the molecules and does not result from artifacts like edge effects or defects in the molecular monolayer. Device fabrication is tested for two n‐Si doping levels. With highly doped Si, transport is dominated by tunneling and reveals sharp conductance onsets at room temperature. Using the temperature dependence of current across medium‐doped n‐Si, the molecular tunneling barrier can be separated from the Si‐Schottky one, which is a 0.47 eV, in agreement with the molecular‐modified surface dipole and quite different from the bare Si–H junction. This indicates that Pb evaporation does not cause significant chemical changes to the molecules. The ability to manufacture reliable devices constitutes important progress toward possible future hybrid Si‐based molecular electronics.