高精度瞄准镜零位走动量检测研究

为了解决高精度瞄准镜性能检测难点——检测各种环境试验条件下的零位走动量,设计了基于CCD图像检测技术的测试系统,该系统通过对高精度瞄准镜连接座上定位点试验前后位置测量,获得定位点位置差量,依据位置差量调整枪镜固定基座,使瞄准镜的连接座上的定位点复原至试验前位置,进而测量、计算出零位走动。通过对平行光管、CCD光学系统焦距的计算和系统精度分析,并经实际工程应用可知,测量精度不大于2.16",测量范围不小于4320",达到检测指标要求。结果表明,该测试系统检测方法正确可靠、检测精度高,为高精度瞄具零位走动的检测提供了方法。     

光电跟瞄系统瞄准精度测试技术

为了提高多传感器光电跟瞄系统瞄准精度,提出了多传感器光电跟瞄系统瞄准精度测试的3种方法:像纸法、CCD法和靶标法。系统采用宽光谱大口径平行光管,结合光电跟瞄系统的激光、红外和电视分系统,实现激光与红外/电视瞄准线高精度测试。详细介绍了每种测试方法的工作原理和主要误差来源,建立了实验测试环境,分别用像纸法、CCD法和靶标法对同一光电跟瞄系统红外、电视、激光传感器的瞄准线之间的偏差进行了测试和误差分析。结果表明,靶标法测试误差源少,精度能够达到4″,适用于高精度光电跟瞄系统瞄准精度测试。     

相机姿态校正模型的红外瞄具零位走动量测量

根据红外瞄具零位走动量高精度测试需求,提出了一种基于相机姿态自适应数学模型的红外瞄具零位走动量测量方法。设计了一种相机姿态自适应修正新算法,建立了相机姿态修正模型,并将其应用于零位走动量测量,克服了由于CCD相机倾斜引起零位走动量测量误差的难题。基于图像判读技术,采用重心法对针孔靶及瞄准分划图像进行定位,利用Zernike矩不变性质实现边缘点的亚像素细分。构建了实验系统,经实验验证,测量精度优于0.02mil(1mil=0.254cm),满足红外瞄具零位走动量的高精度测试需求。     

基于车载的目标探测平台技术研究

针在复杂环境下对目标进行自动搜索、探测、分类、识别和自动跟踪是一个具有挑战性的世界难题。结合正在研制的特种车辆目标搜索系统,该文对车载目标探测的关键技术进行了分析和研究,提出了一种复合的目标检测和识别方法,并工程实现了基于微型动调陀螺的平台稳瞄系统。该系统有机集成了多视场电荷耦合元件(CCD)摄像头、红外探测器和毫米波探测器,可在车辆机动状态下对视距内的动、静目标进行有效探测。平台稳定精度和跟踪精度测试结果表明,系统稳定精度高,低速性能好,工作可靠,为车辆运动时平台上的各探测器提供了隔离度高的稳定环境,可满足未来高机动条件下的战争需求。     

红外瞄具温度应力可靠性检测系统研究

为了检测红外瞄具在高低温恶劣环境下对不同波长的红外目标成像可靠性,利用黑体和平行光管组成的光学系统模拟无穷远红外目标,红外瞄具置于高低温环境下,CCD采集红外瞄具对红外目标所成的像,从而判定高低温下红外瞄具成像质量。所设计的平行光管视场大,各波长对应焦平面处在20 lp/mm空间频率下的MTF均高于0.2。同时为了实现快速准确地在检测系统中提供稳定的-55~70℃的高低温实验条件,采用一种基于自适应模糊PID温度控制技术。采用自适应因子将模糊推理器和PID控制器相结合,通过在线自调整控制参数,进一步提高了PID控制器的性能和系统的控制精度。实验表明该方法提高了常规PID控制的动态响应过程并保持无静态误差,其控制精度可达0.05℃。     

传输型CCD相机综合像质评价方法的研究

介绍了以CCD探测器为图像栽体的CCD相机整机系统的综合像质评价方法.通过成像理论建模,分别对光学系统、CCD器件及相机整机系统进行调制传递函数分析.利用CCD器件的"离散采样"特性不满足线性空间不变性的条件,确定调制传递函数的使用限制条件.给出了CCD相机整机系统的调制传递函数测试方案和测试条件,完成了实验室整系统"调制传递函数"的检测试验,并对检测结果进行分析与评价,实现了CCD相机整机系统的像质评价.     

红外零位走动量测量中的相机姿态自适应补偿

为提高红外零位走动量测量精度,针对测量过程中相机姿态变化误差引起的图像定位精度不高问题,提出了一种CCD相机姿态小角度变化自适应补偿方法。通过理论分析,推导出相机姿态解算公式,建立了CCD相机姿态解算数学模型,然后基于某型红外瞄具零位走动量测量系统,分别针对三种相机姿态,对瞄具分划线在参考坐标系中的坐标进行了对比实验。结果表明,测量精度优于0.01 mil,能减小相机倾斜对红外瞄具零位走动量测量带来的误差,为提高零位走动量测量精度提供了一种相机姿态自适应补偿的新方法。     

一种机载红外跟瞄器动态跟踪精度测试方法

针对红外跟瞄器在机载大角速度运动条件下的使用要求,提出实验室内目标跟踪精度的动态测试方法。利用原有“静态测试”的方法,结合红外跟瞄器的特点,对“目标信息”的生成和测试系统数据通讯进行详细设计,实现多源数据的有效交联。对测试原理和测试系统进行了简要介绍,并对数据进行了详细分析,实验结果表明,利用提出的动态跟踪精度测试方法可在实验室条件下实现对红外跟瞄器动态跟踪精度性能参数的有效测试,为客观评价机载红外跟瞄器的目标跟踪性能提供了有效的测试方法。     

微光图像的计算机模拟

利用计算机模拟生成微光图像的技术已用于夜视光电系统的性能测试、目标识别等方面，具有重要的事军价值。讨论了夜视系统通过低层大气时的光学成像问题，及成像器件对图像产生的影响。建立了大气和微光CCD作用效果模型，模拟生成了逼真的微光图像。     

电子倍增CCD 模拟前端设计与信号优化

基于电子倍增CCD（EMCCD）在微光低照度条件下的实时应用,针对EMCCD 对驱动信号相位、频率、幅度的严格要求,以及输出信号的特点,在深入分析模拟前端各部分功能的基础上,提出一种改善EMCCD 驱动电路,优化驱动信号质量,降低模拟前端噪声水平的驱动策略,设计一款实时、低噪、 稳定、适用于微光环境的EMCCD相机。工程验证表明,在环境照度为110-3 lx,信号时钟为12.5MHz,帧频为25帧/s 的条件下,EMCCD 相机具有实时快速成像能力,输出的模拟视频信号低噪稳定,成像系统捕获的图像清晰信噪比高,基本满足EMCCD 成像系统在微光低照度环境下的实时应用需求。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.