Dielectric Properties in the Microwave Range of K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>NbO<Subscript>3</Subscript> Ceramics

Dielectric properties of a potassium sodium niobate (KNN) system in the microwave range up to GHz have rarely been studied. Since K_0.5Na_0.5NbO₃ is the most common and typical type of KNN materials, non-doped K_0.5Na_0.5 NbO₃ ceramics were synthesized at different temperatures (1080°C, 1090°C, 1100°C, and 1110°C) by a traditional solid reaction method for further characterization and analysis. The ceramics were in perovskite phase with orthorhombic symmetry. A small quantity of second phase was found in the 1110°C sintered specimen, which resulted from the volatilization of alkali oxides as the temperature increased. The complex permittivity was measured for the first time in the microwave range (8.2–12.4 GHz) and in the temperature range from 100°C to 220°C, and the effects of annealing on the dielectric properties were studied. The results indicate that the complex permittivity of KNN ceramics over the microwave range increases mainly due to high bulk density and the additional dielectric contributions of oxygen vacancies at high temperature.     

35 GHz dielectric resonator stabilised gunn oscillator

A 35 GHz dielectric resonator oscillator(DRO) using GaAs Gunn diode in microstrip configuration has been designed and developed. The oscillator, with an integral waveguide-to-microstrip transition, delivered an output greater than 18 dBm. Phase noise of the oscillator is found to be better than ?80 dBc/Hz at 100 KHz away from the carrier. A frequency drift of about ±25 MHz has been observed over the temperature range from ?10 °C to 50 °C.     

Structural and Microwave Properties of Silica Xerogel Glass-Ceramic Sintered by Sub-millimeter Wave Heating using a Gyrotron

In this paper, we present and discuss experimental results from a microwave sintering of silica glass-ceramics, produced from amorphous silica xerogel extracted from sago waste ash. As a radiation source for a microwave heating a sub-millimeter wave gyrotron (Gyrotron FU CW I) with an output frequency of 300?GHz has been used. The powders of the amorphous silica xerogel have been dry pressed and then sintered at temperatures ranging from 300?°C to 1200?°C. Microwave absorbing properties of the sintered samples were investigated by measuring the dielectric constant, the dielectric loss, and the reflection loss at different frequencies in the interval from 8.2 to 12.4?GHz. Furthermore, the characteristics of the formation process for producing silica glass-ceramics were studied using a Raman Spectroscopy and a Scanning Electron Microscopy (SEM). The results indicate that the samples sintered at 1200?°C are characterized by lower reflection losses and a better transparency due to the formation of a fully crystallized silica glass- ceramic at sufficiently high temperature.     

A low temperature dependent microstrip substrate

An X band resonant ring temperature coefficient and the coefficient of effective dielectric constant for a modified zirconate substrate have been measured as -1.58 × 10^-6per °C and 3.0 × 10^-6per °C over the temperature range -40°C to +120°C at X band. The effective dielectric constant at room temperature varies from 19.82 at 5.98 GHz to 21.24 at 11.61.     

温度对AlGaN/GaN HEMT电学性能的影响

研究了蓝宝石衬底AlGaN/GaN HEMT器件直流和微波性能随温度的变化。研究结果表明,器件直流性能随着温度升高逐渐下降,350°C时直流性能依然良好,从350°C冷却到室温后,器件直流特性除欧姆接触电阻改善外,其他都得到了恢复;微波测试表明,器件fT,fmax都随温度升高而下降,180°C时,fT从室温的11.6GHz下降为7.5GHz、fmax从24.6GHz下降为19GHz,通过外推得到350°C时的fT为3.5GHz,fmax为12GHz。证明了AlGaN/GaN HEMT具有良好的热稳定性,适合在高温下进行高频工作。     

Temperature Stabilization of GaAs MESFET Oscillators Using Dielectric Resonators

A simple model of the temperature stabilization of dielectric resonator FET oscillators (DRO's) is presented. Deduced from the oscillation condition, the model furnishes relations for oscillation power and frequency stability with temperature. A stack resonator with an appropriate linear resonance frequency/temperature characteristic has been developed and used to stabilize a DRO: frequency stability of +- 120 kHz over - 20°C to 80°C (/sup delta=/+- 0.1 ppm/K) at 11.5 GHz has been achieved.     

A Highly Stabilized GaAs FET Oscillator Using a Dielectric Resonator Feedback Circuit in 9-14 GHz

A new type of highly stabilized GaAs FET oscillator using a dielectric resonator and a stabilization resistor in the feedback circuit has been developed. The oscillator fabricated with a microwave integrated circuit has a high external quality factor Q/sub ex/ for more than1000 with no hysteresis phenomena. The microwave characteristics of the GaAs FET oscillator has revealed 1) high efficiency of 20 percent with 70-mW output power at 11.85 GHz, 2) a wide tuning range more than1000 MHz, 3) a wide oscillation frequency from 9 to 14 GHz with same MIC pattern by using five dielectric resonators of different sizes, 4) a high-frequency stability as low as /spl plusmn/ 150kHz in the tempature range from -20 to + 60/spl deg/ C, and 5) low FM noise of 0.07 Hz/ /spl radic/Hz at off-carrier frequency of 100kHz.     

Effects of Heat-Treatment Temperature on the Microstructure, Electrical and Dielectric Properties of M-Type Hexaferrites

M-type hexaferrite BaCr _x Ga _x Fe_12?2x O₁₉ (x = 0.2) powders have been synthesized by use of a sol–gel autocombustion method. The powder samples were pressed into 12-mm-diameter pellets by cold isostatic pressing at 2000 bar then heat treated at 700°C, 800°C, 900°C, and 1000°C. X-ray diffraction patterns of the powder sample heat treated at 1000°C confirmed formation of the pure M-type hexaferrite phase. The electrical resistivity at room temperature was significantly enhanced by increasing the temperature of heat treatment and approached 5.84 × 10⁹ Ω cm for the sample heat treated at 1000°C. Dielectric constant and dielectric loss tangent decreased whereas conductivity increased with increasing applied field frequency in the range 1 MHz–3 GHz. The dielectric properties and ac conductivity were explained on the basis of space charge polarization in accordance with the Maxwell–Wagner two-layer model and Koop’s phenomenological theory. The single-phase synthesized materials may be useful for high-frequency applications, for example reduction of eddy current losses and radar absorbing waves.     

GaAs Monolithic MIC's for Direct Broadcast Satellite Receivers

A 12-GHz low-noise amplifier (LNA), a 1-GHz IF amplifier (IFA), and an 11-GHz dielectric resonator oscillator (DRO) have been developed for DBS home receiver applications by using GaAs monolithic microwave integrated circuit (MMIC) technology. Each MMIC chip contains FET's as active elements and self-biasing source resistors and bypass capacitors for a single power supply operation. It also contairns dc-block and RF-bypass capacitors. The three-stage LNA exhibits a 3.4-dB noise figure and a 19.5-dB gain over 11.7-12.2 GHz. The negative-feedback-type three-stage IFA shows a 3.9-dB noise figure and a 23-dB gain over 0.5-1.5 GHz. The DRO gives 10.mW output power at 10.67 GHz, with a frequency stability of 1.5 MHz over a temperature range from -40-80°C. A direct broadcast satellite (DBS) receiver incorporating these MMIC's exhibits an overafl noise figure of /spl les/ 4.0 dB for frequencies from 11.7-12.2 GHz.     

Frequency domain (1 kHz-40 GHz) characterisation of thin films for multichip module packaging technology

Parallel plate capacitors for the broadband dielectric characterisation of both high (amorphous BaTiO/sub 3/ and amorphous TaO/sub x/) and low (parylene) dielectric constant thin films were fabricated at low temperature (<200 degrees C). The dielectric constant and loss tangent were determined through the measurement of C, G and the S parameters of the capacitors. These thin film dielectrics exhibit no dispersion in the frequency range 1 kHz-40 GHz.<>     

Highly Stable Dielectric Resonator FET Oscillators

The long-term frequency drift of GaAs FET oscillators with temperature has been analyzed theoretically and experimentally in view of stabilization using dielectric resonators. It was found that the dielectric material stability and quality factor should be within certain limits, and, in addition, that the resonance frequency over the temperature characteristic should be quite linear. Such a material has been developed on the basis of BaTi/sub 4/O/sub 9/ and Ba/sub 2/Ti/sub 9/O/sub 20/ , and ultra-stable DRO's with frequency drifts of around +- 100 kHz for -50 to 100°C at 11 GHz (ap +- 0.06 ppm/K) have been realized.     

Ultra-Low Loss Microwave Dielectric Ceramic Li<Subscript>2</Subscript>Mg<Subscript>2</Subscript>TiO<Subscript>5</Subscript> and Low-Temperature Firing Via B<Subscript>2</Subscript>O<Subscript>3</Subscript> Addition

Li₂Mg₂TiO₅, a rock-salt structured ceramic fabricated by a solid-state sintering technique, was characterized at the microwave frequency band. As a result, a microwave dielectric permittivity (ε_r) of 13.4, a quality factor of 95,000 GHz (at 11.3 GHz), and a temperature coefficient of resonance frequency (τ_f) of ? 32.5 ppm/°C have been obtained at 1320°C. Li₂Mg₂TiO₅ ceramics have low permittivity, a broad processing temperature region, and a low loss, making them potential applications in millimeter-wave devices. Furthermore, B₂O₃ addition efficiently lowered the sintering temperature of Li₂Mg₂TiO₅ to 900°C, which opens up their possible applications in low-temperature co-fired ceramics (LTCC) technology.     

2.45-GHz-CMOS temperature compensated multi-controlled oscillator for IEEE 802.15 wireless PAN

A 2.45 GHz Multi-Controlled Oscillator (MCO) has been designed using a CMOS 0.28 μm STMicroelectronics technology for use in frequency synthesizer and open loop FSK modulation circuit in multi-band IEEE 802.15 Wireless Personal Area Network (PAN) applications. Simple structure allowing multiple frequency control has been adopted so that the VCO maintains its center frequency and tuning range throughout ?40°C to 120°C by the way of a Proportional To Absolute Temperature (PTAT) biasing scheme. Simulations and measurements show the sensitivity of the VCO center frequency has been reduced from 1300 ppm/°C to 73 ppm/°C, while a phase noise of ?96 dBc/Hz @ 1 MHz offset with a power consumption of 18 mW have been achieved.     

The error of brightness temperature of sea water caused by the error of dielectric constant

Comparing three formulas of calculating complex dielectric constant of saline solutions shows that two of them will yield errors of no more than 5% at frequency 34.88GHz except at temperature 0°C. An expression of the relative error of brightness temperature has been developed, which claims that the relative error of brightness temperature is at least less than half of the relative error of complex dielectric constant.     

A low-noise voltage-controlled ring oscillator in 28-nm FDSOI technology for UWB applications

In millimeter wave systems, performance degradation mainly occurs due to high phase noise of voltage-controlled oscillators (VCOs). This paper proposes a low power, low phase noise ring-VCO developed for ultra-wide band applications identified for possible 5G usage. For this purpose, a novel differential symmetrical load delay cell based 3-stage ring oscillator has been introduced to design the ring-VCO. The 28 nm CMOS Fully Depleted Silicon On Insulator (FDSOI) technology is adopted for designing this VCO circuit with 1 V power supply while a new voltage control through the transistor body bias is implemented. The simulated results show that the proposed oscillator works in the tuning range of 29–49 GHz and dissipates 3.75 mW of power. It exhibits a phase noise of −129.2 dBc/Hz at 1 MHz offset from 49 GHz oscillation frequency, and a remarkable Figure of Merit (FoM) of −217.26 dBc/Hz. With similar power supply, the phase noise rises to −93.16 dBc/Hz for a second oscillator involving more of active components exactly 9 delay cells. Further, the impact of the operation temperature variation on the VCO performance is investigated. Results show a drift in the oscillation frequency for a temperature step from 27 °C to 40 °C and a degradation of 3dBc in the phase noise performance.     

Plasma deposition of aluminum oxide films

A plasma deposition technique for amorphous aluminum oxide films is discussed. A 450 kHz or 13.56 MHz power supply was used to generate the plasma and the deposition of the film was achieved at low plasma power using trimethyl-aluminum and carbon dioxide reactant sources. It has been found that for the low frequency plasma the growth is strongly dependent upon TMA concentration, indicating that the growth process is mass transport limited. On the other hand using the 13.56 MHz discharge results in a surface controlled growth rate. An increase in the deposition temperature up to 300° C makes the films more dense and lowers their etching rate. FTIR and ESCA measurements showed that oxidation is only completed with high CO₂ concentrations and a deposition temperature above 250° C. The dielectric films were found to have a dielectric constant in the range 7.3=2-9 and a refractive index between 1.5–1.8 depending upon deposition conditions.     

A novel millimeter wave gunn oscillator

It is described that the design, configuration and the performance of a novel millimeter wave Gunn oscillator stabilized by external cavity and temperature compensation in this paper. The frequency stability is 3.6 × 10^?6 at 52 GHz over the teperature range from ?10 to 50 °C. An output power of more than 100mW has been obtained in the frequency range from 51.5 to 52.8 GHz.     

Effect of bismuth addition on sintering behavior and microwave dielectric properties of zinc titanate ceramics

The influences of Bi₂O₃ addition on the sintering behavior and microwave dielectric properties of ZnO-TiO₂ ceramics were investigated. ZnO-TiO₂ ceramics were prepared with conventional solid-state method and sintered at temperatures from 950°C to 1,100°C. The sintering temperature of ZnO-TiO₂ ceramics with Bi₂O₃ addition could be effectively reduced to 1,000°C due to the liquidphase effects resulting from the additives. A proper amount of Bi₂O₃ addition could effectively improve the densification and dielectric properties of ZnO-TiO₂ ceramics. The temperature coefficient of resonant frequency could be controlled by varying the sintering temperature and lead to a zero τ_f value. At 1,000°C, 1ZnO-1TiO₂ ceramics with 1 wt.% addition gave better microwave dielectric properties ɛ_r of 29.3, a Q × f value of 22,000 GHz at 8.36 GHz, and a τ_f value of +17.4 ppm/ °C.     

Microwave and Millimeter Wave Characteristics and Attenuation of Clouds over some Malaysian Equatorial Stations

Based on radar range height indicator (RHI) measurements, cloud characteristics in relation to radiowave propagation over three locations in different geographical region in western Malaysia have been presented. It is seen that low cloud occurrence over these locations are quite significant. Cloud attenuation and noise temperature can result in serious degradation of telecommunication link performances. This paper presents cloud coverage in different months, 0°C isotherm height and cloud attenuation results at 12 GHz, 20 GHz, 36 GHz, 50 GHz, 70 GHz and 100 GHz over measurement site. The low level cloud over the measurement sites has been found to occur for many days and nights and particularly in the months of April to May and October to December. Such results are useful for satellite communication and remote sensing application in Malaysia.     

DC and RF Characteristics of 0.15 pm Power Metamorphic HEMTs

DC and RF characteristics of 0.15 °m GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The 0.15 °m ° 100 °m MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of ‐0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4‐inch wafer were 8.3% and 5.1%, respectively. The obtained cut‐off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The 8 ° 50 °m MHEMT device shows 33.2% power‐added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T‐shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.